MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors. • • • • • • • • POWER TRANSISTORS 12 AMPERES 1200 VOLTS — VCES 50 and 150 WATTS 1200 Volt VCES Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Maximum Repetitive Emitter–Base Avalanche Energy Specified (Industry First) High Current Capability: Performance Specified at 6.5 Amps Continuous Rating — 12 Amps Max Pulsed Rating — 15 Amps Max Isolated MJF16206 is UL Recognized Fast Switching: 100 ns Inductive Fall Time (Typ) 1000 ns Inductive Storage Time (Typ) Low Saturation Voltage 0.25 Volts (Typ) at 6.5 Amps Collector Current High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 V (Min) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Breakdown Voltage VCES 1200 Vdc Collector–Emitter Sustaining Voltage VCEO(sus) 500 Vdc VEBO 8.0 Vdc Emitter–Base Voltage Isolation Voltage (RMS for 1 sec., TA = 25_C, Relative Humidity 30%) VISOL Vrms — — Figure 19 Figure 20 Collector Current — Continuous Collector Current — Pulsed (1) IC ICM 12 15 Adc Base Current — Continuous Base Current — Pulsed (1) IB IBM 5.0 10 Adc W(BER) 0.2 mjoules PD 150 39 1.49 Watts TJ, Tstg – 55 to + 150 _C Symbol Max Unit RθJC 0.67 _C/W TL 260 _C Repetitive Emitter–Base Avalanche Energy Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above 25_C Operating and Storage Temperature CASE 340K–01 TO–247AE W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Lead Temperature for Soldering Purposes 1/8″ from the Case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. SCANSWITCH is a trademark of Motorola Inc. REV 3 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v MJW16206 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit — — — — 250 25 — — 25 500 — — 8.0 11 — — — 0.15 0.25 1.0 1.0 — 0.9 1.5 — 5.0 3.0 24 8.0 6.0 — 13 — tds — 250 — ns EB(off) — 30 — µjoules Cob — 180 350 pF fT — 3.0 — MHz Cc–hs — 17 — pF tsv tfi — — 1000 100 2250 250 OFF CHARACTERISTICS (1) Collector Cutoff Current (VCE = 1200 Vdc, VBE = 0 V) (VCE = 850 Vdc, VBE = 0 V) ICES Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0) IEBO Collector–Emitter Sustaining Voltage (Figure 10) (IC = 10 mAdc, IB = 0) VCEO(sus) Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) V(BR)EBO µAdc µAdc Vdc Vdc ON CHARACTERISTICS (1) Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc) (IC = 6.5 Adc, IB = 1.5 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 6.5 Adc, IB = 1.5 Adc) VBE(sat) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 12 Adc, VCE = 5.0 Vdc) hFE Vdc Vdc — DYNAMIC CHARACTERISTICS Dynamic Desaturation Interval (Figure 15) (IC = 6.5 Adc, IB = 1.5 Adc, LB = 0.5 µH) Emitter–Base Avalanche Turn–off Energy (Figure 15) (t = 500 ns, RBE = 22 Ω) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Gain Bandwidth Product (VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz) Collector–Heatsink Capacitance — MJF16206 Isolated Package (Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Inductive Load (Figure 15) (IC = 6.5 A, IB = 1.5 A) Storage Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2 ns 2.0%. Motorola Bipolar Power Transistor Device Data hFE , DC CURRENT GAIN 100 70 50 TJ = 100°C 30 20 25°C – 55°C 10 7 5 3 VCE = 5 V 2 1 0.2 2 3 5 7 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 0.3 10 20 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) MJW16206 5 TJ = 25°C TJ = 100°C 3 2 1 0.7 0.5 0.3 0.2 IC/IB1 = 10 10 0.1 0.07 0.05 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 8A IC = 2 A 4A 6.5 A 10 A 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IB, BASE CURRENT (AMPS) 2 3 2 3 5 7 10 20 30 50 100 200 300 500 1K 3 IC/IB1 = 5 to 10 1 0.7 0.5 0.3 TJ = 25°C TJ = 100°C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 f(test) = 1 MHz TC = 25°C VCE = 10 V 0.2 0.3 0.5 0.7 1 2 3 5 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Typical Transition Frequency Motorola Bipolar Power Transistor Device Data 20 Figure 4. Typical Base–Emitter Saturation Voltage f T, TRANSITION FREQUENCY (MHz) C, CAPACITANCE (pF) Cob TC = 25°C f = 1 MHz 1 10 IC, COLLECTOR CURRENT (AMPS) Cib 10 0.1 0.2 0.3 0.5 7 5 2 0.1 0.2 5 1K 700 500 300 200 100 70 50 30 20 3 10 7 5 Figure 3. Typical Collector Saturation Region 10K 7K 5K 3K 2K 2 Figure 2. Typical Collector–Emitter Saturation Voltage TJ = 25°C 3 2 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical DC Current Gain 7 5 0.5 0.7 0.2 0.3 5 7 10 3 MJW16206 SAFE OPERATING AREA INFORMATION 20 10 MJW16206 5 3 2 dc 10 µs 5 ms 100 ns 1 0.5 0.3 0.2 WIREBOND LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT 0.1 0.05 0.03 0.02 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 30 20 II* IC/IB1 ≥ 5 TJ ≤ 100°C 16 12 8 VBE(off) = 5 V 4 0V 2V 0 1 20 30 50 10 100 200 300 500 2 3 5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1K 0 200 800 600 400 1K 1.2K VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) *REGION II — EXPANDED FBSOA USING MUR8100E, ULTRAFAST RECTIFIER (SEE FIGURE 12) Figure 8. Maximum Reverse Bias Safe Operating Area Figure 7. Maximum Forward Biased Safe Operating Area 100 FORWARD BIAS 90 POWER RATING FACTOR (%) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 80 SECOND BREAKDOWN DERATING 70 60 50 THERMAL DERATING 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Power Derating REVERSE BIAS Inductive loads, in most cases, require the emitter–to– base junction be reversed biased because high voltage and high current must be sustained simultaneously during turn– off. Under these conditions, the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as 4 active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics. Motorola Bipolar Power Transistor Device Data MJW16206 0.02 µF H.P. 214 OR EQUIV. P.G. + V ≈ 11 V 100 T1 2N6191 + 0 – 20 IC(pk) +V IC 0V 10 µF *IC –V RB1 ≈ – 35 V A T.U.T. A MR856 RB2 0.02 µF + – 50 VCE(pk) L *IB 50 VCE VCC Vclamp IB1 IB 2N5337 1 µF RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 500 100 V(BR)CEO L = 10 mH RB2 = ∞ VCC = 20 Volts –V T1 IB2 (ICpk) [ LcoilVCC T1 adjusted to obtain IC(pk) *Tektronix P–6042 or Equivalent Note: Adjust – V to obtain desired VBE(off) at Point A. Figure 10. RBSOA/V(BR)CEO(sus) Test Circuit r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.5 0.2 0.2 0.1 0.1 RθJC(t) = r(t) RθJC RθJC = 0.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 1 100 10 1K 10K t, TIME (ms) Figure 11. Thermal Response VCE (1000 V MAX) 10 µF MUR8100 +15 1 µF 100 µF 150 Ω 10 mH MTP8P10 100 Ω MTP8P10 RB1 MUR1100 MPF930 MUR105 +10 MPF930 T.U.T. MUR105 50 Ω RB2 MTP12N10 MJE210 500 µF 150 Ω 1 µF VOff Note: Test Circuit for Ultrafast FBSOA Note: RB2 = 0 and VOff = – 5 Volts Figure 12. Switching Safe Operating Area Motorola Bipolar Power Transistor Device Data 5 MJW16206 DYNAMIC DESATURATION The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, “dynamic desaturation.” In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn–off transition. A sluggish transition results in serious consequences. tfi 90% IC(pk) VCE IC VCE = 20 V 10% IC(pk) 0 tsv 0 0% IB As the saturation voltage of the output transistor increases, the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 13 and 14) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector Current ramp, excellent turn–off switching performance, and significantly lower overall power dissipation. COLLECTOR-EMITTER VOLTAGE (VOLTS) DYNAMIC DESATURATION 5 VCE 4 3 DYNAMIC DESATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V 2 1 0 tds TIME (ns) Figure 13. Deflection Simulator Switching Waveforms From Circuit in Figure 15 6 Figure 14. Definition of Dynamic Desaturation Measurement Motorola Bipolar Power Transistor Device Data MJW16206 tant advantages. First, the configuration of T1 allows LB to be placed outside the path of forward base current making it unnecessary to expend energy to reverse current flow as in a series base inductor. Second, there is no base resistor to limit forward base current and hence no power loss associated with setting the value of the forward base current. The process of generating the ramp stores rather than dissipates energy. Tailoring the amount of energy stored in T 1 to the amount of energy, EB (off) , that is required to turn–off the output transistor results in essentially lossless operation. [Note: B+ and the primary inductance of T1 (LP) are chosen such that 1/2 LP Ib2 = EB(off)]. EMITTER–BASE TURN–OFF ENERGY Typical techniques for driving horizontal outputs rely on a pulse transformer to supply forward base current, and a turn–off network that includes a series base inductor to limit the rate of transition from forward to reverse drive. An alternate drive scheme has been used to characterize the SCANSWITCH series of devices (see Figure 15). This circuit produces a ramp of base drive, eliminating the heavy overdrive at the beginning of the collector current ramp and underdrive just prior to turnoff produced by typical drive strategies. This high performance drive has two additional impor- + 24 V U2 MC7812 VI R14 150 R13 1K VO GND + C1 100 µF (IB) Q6 2N5401 R7 2.7K R16 430 Q2 MJ11016 C7 110 pF R8 9.1K R9 470 + C3 10 µF + C2 10 µF R17 MDC1000A R5 1K R1 1K (IC) Q5 MJ11016 3.9 V C6 100 µF Q3 MTP3055E + LY 120 C4 0.005 R3 250 8 C5 0.1 6 7 OSC VCC % OUT GND R6 1K D2 SCANSWITCH DAMPER DIODE R15 10K CY 1 T1 U1 MC1391P 2 R12 470 1W T1: FERROXCUBE POT CORE #1811P3C8 T1: PRIMARY SEC. TURNS RATIO = 13:4 T1: GAPPED FOR LP = 30 µH LB = 0.5 µH CY = 0.01 µF LY = 13 µH D1 MUR110 VCE LB Q4 SCANSWITCH HORIZ OUTPUT TRANSISTOR R4 22 Figure 15. High Resolution Deflection Application Simulator Motorola Bipolar Power Transistor Device Data 7 MJW16206 +15 1 µF ts and tf 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 V(off) adjusted to give specified off drive VCC 250 V IC 6.5 A IB1 1.3 A IB2 Per Fig. 17 & 18 RB1 7.7 Ω RL 38 Ω RB1 MPF930 A +10 V MPF930 MUR105 50 Ω MTP12N10 MJE210 500 µF 1 µF 150 Ω Voff T.U.T. A *IC *IB RL VCC 10 1000 7 700 5 500 IB2 = IB1 3 t, TIME (ns) t, TIME ( µs) Figure 16. Resistive Load Switching 2 IC/IB1 = 5 TC = 25°C 1 IB2 = 2 (IB1) 200 IC/IB = 5 TC = 25°C 100 0.7 70 0.5 IB2 = 2 (IB1) 50 1 2 3 5 10 7 IC, COLLECTOR CURRENT (AMPS) Figure 17. Typical Resistive Storage Time 8 IB2 = IB1 300 20 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) Figure 18. Typical Resistive Fall Time Motorola Bipolar Power Transistor Device Data 20 MJW16206 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE LEADS 0.099” MIN LEADS HEATSINK HEATSINK 0.110” MIN Figure 19. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 20. Screw or Clip Mounting Position for Isolation Test Number 2 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4–40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 21. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data 9 MJW16206 PACKAGE DIMENSIONS 0.25 (0.010) M –T– –Q– T B M E –B– C 4 L U A R 1 K 2 3 –Y– P V H F G D 0.25 (0.010) M Y Q J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 S CASE 340K–01 TO–247AE ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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