HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level. • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Ordering Information PART NUMBER PACKAGE BRAND HGTP20N60C3R TO-220AB 20N60C3R HGTG20N60C3R TO-247 20N60C3R HGT1S20N60C3R TO-262AA 20N60C3R HGT1S20N60C3RS TO-263AB 20N60C3R The electrical specifications include typical Turn-On and Turn-Off dv/dt ratings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same TJ as the IGBT under test. Formerly Developmental Type TA49047. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3RS9A. G E Packaging JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION) E E C C G COLLECTOR (FLANGE) COLLECTOR (FLANGE) JEDEC TO-263AB M A G JEDEC TO-262AA E A COLLECTOR (FLANGE) C G G E COLLECTOR (FLANGE) HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-3 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 4226.1 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: ALL TYPES 600 UNITS V 40 20 80 ±20 ±30 80A at 600V 164 1.32 100 -40 to 150 260 10 A A A V V W W/oC mJ oC oC µs 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 440V, TJ = 150oC, RGE = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage ICES VCE(SAT) TEST CONDITIONS 15 - - V VCE = BVCES TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 3.0 mA IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC - 1.8 2.2 V - 2.1 2.5 V 3.5 6.3 7.5 V - - ±100 nA 80 - - A VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±20V Switching SOA (See Figure 12) SSOA TJ = 150oC RG = 10Ω VGE = 15V Gate-Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 9.0 - V - 87 110 nC - 116 150 nC - 34 - ns Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current VCE(PK) = 600V L = 1mH On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVES Current Turn-On Delay Time tD(ON)I TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Current Rise Time Current Turn-Off Delay Time Current Fall Time tRI tD(OFF)I tFI Turn-Off Voltage dv/dt (Note 3) dVCE/dt Turn-On Voltage dv/dt (Note 3) dVCE/dt VGE = 15V VGE = 20V Diode used in test circuit RURP1560 at 150oC - 40 - ns - 390 500 ns - 330 400 ns - 1.3 - V/ns - 7.0 - V/ns - 2.3 - mJ Turn-On Energy (Note 4) EON Turn-Off Energy (Note 5) EOFF - 3.0 - mJ Thermal Resistance RθJC - - 0.76 oC/W NOTES: 3. dVCE/dt depends on the diode used and the temperature of the diode. 4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the collector voltage equals VCE(ON). This value of EON was obtained with a RURP1560 diode at TJ = 150oC. A different diode or temperature will result in a different EON. For example with diode at TJ = 25oC EON is about one half the value at 150oC. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5-4 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 80 ICE, COLLECTOR EMITTER CURRENT (A) ICE, COLLECTOR EMITTER CURRENT (A) Typical Performance Curves DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 70 60 50 TC = -40oC TC = 25oC 40 30 TC = 150oC 20 10 0 6 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) 14 40 VGE = 15.0V 30 12.0V 25 20 10.0V 15 10 9.0V 8.5V 8.0V 7.5V 5 0 0 15 ICE, DC COLLECTOR CURRENT (A) ICE, COLLECTOR EMITTER CURRENT (A) TC = 25oC TC = 150oC 30 20 10 0 1 8 2 4 6 3 5 7 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 6 7 8 9 10 30 25 20 15 10 5 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 4. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 425 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V VGE = 15V tD(OFF)I , TURN OFF DELAY TIME (ns) tD(ON)I , TURN ON DELAY TIME (ns) 4 VGE = 15V 35 0 25 10 FIGURE 3. COLLECTOR EMITTER ON STATE VOLTAGE 38 3 40 PULSE DURATION = 250µs 80 DUTY CYCLE <0.5% VGE = 15V 70 TC = -40oC 60 0 2 FIGURE 2. SATURATION CHARACTERISTICS 90 40 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 50 DUTY CYCLE <0.5%, TC = 25oC PULSE DURATION = 250µs 35 36 34 32 30 28 26 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V 400 375 350 325 300 275 5 10 20 30 15 25 35 ICE , COLLECTOR-EMITTER CURRENT (A) 5 40 FIGURE 5. TURN ON DELAY TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT 20 25 30 35 10 15 ICE , COLLECTOR EMITTER CURRENT (A) FIGURE 6. TURN OFF DELAY TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT 5-5 40 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Typical Performance Curves 450 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V 100 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V 425 tFI , FALL TIME (ns) tRI , TURN ON RISE TIME (ns) 120 (Continued) 80 60 40 400 375 350 325 300 20 275 0 5 10 15 20 25 30 35 250 40 5 ICE , COLLECTOR-EMITTER CURRENT (A) EOFF , TURN OFF ENERGY LOSS (mJ) EON , TURN ON ENERGY LOSS (mJ) 6.5 4.0 3.0 2.0 1.0 0 5 15 20 30 10 25 35 ICE , COLLECTOR EMITTER CURRENT (A) ICE, COLLECTOR EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V TC = 75oC, VGE = 15V 20 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.76oC/W 5 10 20 30 ICE , COLLECTOR EMITTER CURRENT (A) 30 35 40 4.5 3.5 2.5 1.5 5 10 15 20 25 30 35 ICE , COLLECTOR EMITTER CURRENT (A) 40 FIGURE 10. TURN OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR EMITTER CURRENT 30 1 25 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V 5.5 0.5 40 FIGURE 9. TURN ON ENERGY LOSS AS A FUNCTION OF COLLECTOR EMITTER CURRENT 100 20 FIGURE 8. TURN OFF FALL TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 480V, VGE = 15V 5.0 15 ICE , COLLECTOR EMITTER CURRENT (A) FIGURE 7. TURN ON RISE TIME AS A FUNCTION OF COLLECTOR EMITTER CURRENT 6.0 10 40 100 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 1mH 80 PARTS MAY CURRENT LIMIT IN THIS REGION. 60 40 20 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 11. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR EMITTER CURRENT FIGURE 12. SWITCHING SAFE OPERATING AREA 5-6 700 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS (Continued) 4500 VCE , COLLECTOR EMITTER VOLTAGE (V) FREQUENCY = 1MHz 4000 CIES C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 COES 500 0 CRES 0 5 10 15 20 IG REF = 1.376mA, RL = 30Ω, TC = 25oC 600 VCE = 600V 480 12 360 9 VCE = 200V VCE = 400V 240 25 0 3 0 0 10 30 20 40 50 60 70 80 90 QG , GATE CHARGE (nC) FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 6 120 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 100 15 VGE, GATE-EMITTER VOLTAGE (V) Typical Performance Curves FIGURE 14. GATE CHARGE WAVEFORMS 0.5 0.2 0.1 10-1 0.05 t1 0.02 PD t2 0.01 10-2 SINGLE PULSE 10-3 10-5 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuit and Waveform 90% L = 1mH 10% VGE RURP1560 EOFF EON VCE RG = 10Ω 90% + - VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 17. SWITCHING TEST WAVEFORMS 5-7 HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 11) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 3, 5, 6, 9 and 10. The operating frequency plot (Figure 11) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 17. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 11) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBD is a Trademark of Emerson and Cumming, Inc. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. 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