Order this document by BDB01C/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) MAXIMUM RATINGS Rating Symbol BDB01C BDB01D Unit Collector – Emitter Voltage VCEO 80 100 Vdc Collector – Base Voltage VCES 80 100 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watt mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 80 100 — — — — 0.01 0.01 — 100 Unit OFF CHARACTERISTICS Collector – Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) V(BR)CEO BDB01C BDB01D Vdc mAdc ICBO BDB01C BDB01D Emitter Cutoff Current (IC = 0, VEB = 5.0 V) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 IEBO nAdc 1 BDB01C,D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 40 25 400 — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) hFE — Collector – Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) VCE(sat) — 0.7 Vdc Collector – Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) VBE(on) — 1.2 Vdc fT 50 — MHz Cob — 30 pF DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%. 400 hFE , DC CURRENT GAIN TJ = 125°C VCE = 1.0 V 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 1.0 1.0 TJ = 25°C 0.6 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 IB, BASE CURRENT (mA) 10 20 Figure 2. Collector Saturation Region 2 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 50 0 0.5 1.0 2.0 20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 200 500 Figure 3. On Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 80 –0.8 –1.2 40 –1.6 θVB for VBE –2.0 –2.4 Cibo 20 10 8.0 6.0 –2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 4.0 0.1 500 Figure 4. Base–Emitter Temperature Coefficient Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 5. Capacitance 300 200 VCE = 2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TJ = 25°C 60 C, CAPACITANCE (pF) θ VB, TEMPERATURE COEFFICIENT (mV/°C) BDB01C,D 100 70 50 DUTY CYCLE ≤ 10% 2k 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 6. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 µs 500 TC = 25°C 1.0 s 200 TA = 25°C 100 dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN BDB01A BDB01B LIMIT BDB01C BDB01D 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 50 20 30 2.0 1.0 ms 1k 10 1.0 Figure 7. Active Region–Safe Operating Area 3 BDB01C,D PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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