Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 30 MHz, 50 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% 150 W, 50 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability D G CASE 211–11, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc VGS ± 40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.71 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.6 °C/W Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF151 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 5.0 7.0 — mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 350 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 220 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 15 — pF Gps 18 — 22 13 — — dB η 40 45 — % IMD(d3) IMD(d11) — — – 32 – 60 – 30 — OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS Common Source Amplifier Power Gain, f = 30; 30.001 MHz (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) dB ψ Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 – 13) — — — 23 – 50 – 75 — — — dB NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS + 0 – 12 V – C5 D.U.T. R1 RF INPUT + L1 C6 R3 T1 C1 C7 C8 T2 L2 C9 + – C10 50 V – RF OUTPUT C4 C2 R2 C1 — 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or Monolythic with Short Leads C3 — 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 — 15 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 — 10 µF/100 V Electrolytic C3 L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH L2 — Ferrite Bead(s), 2.0 µH R1, R2 — 51 Ω/1.0 W Carbon R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel) T1 — 9:1 Broadband Transformer T2 — 1:9 Broadband Transformer Board Material — 0.062″ Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, er = 5 Figure 1. 30 MHz Test Circuit MRF151 2 MOTOROLA RF DEVICE DATA RFC2 +50 V + C10 R1 BIAS 0 – 12 V C11 L4 + C4 C5 R3 D.U.T. L3 C9 L2 RF OUTPUT C1 L1 RF INPUT C6 C2 C7 C8 R2 C3 L1 — 3/4″, #18 AWG into Hairpin L2 — Printed Line, 0.200″ x 0.500″ L3 — 1″, #16 AWG into Hairpin L4 — 2 Turns, #16 AWG, 5/16 ID RFC1 — 5.6 µH, Choke RFC2 — VK200–4B R1 — 150 Ω, 1.0 W Carbon R2 — 10 kΩ, 1/2 W Carbon R3 — 120 Ω, 1/2 W Carbon Board Material — 0.062″ Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, εr = 5.0 C1, C2, C8 — Arco 463 or equivalent C3 — 25 pF, Unelco C4 — 0.1 µF, Ceramic C5 — 1.0 µF, 15 WV Tantalum C6 — 15 pF, Unelco J101 C7 — 25 pF, Unelco J101 C9 — Arco 262 or equivalent C10 — 0.05 µF, Ceramic C11 — 15 µF, 60 WV Electrolytic D1 — 1N5347 Zener Diode Figure 2. 175 MHz Test Circuit VGS , DRAIN-SOURCE VOLTAGE (NORMALIZED) TYPICAL CHARACTERISTICS 1000 Ciss C, CAPACITANCE (pF) 500 Coss 200 100 50 Crss 20 0 0 10 20 30 40 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) Figure 3. Capacitance versus Drain–Source Voltage MOTOROLA RF DEVICE DATA 50 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 – 25 1D = 5 A 4A 2A 1A 250 mA 0 100 mA 25 50 75 TC, CASE TEMPERATURE (°C) 100 Figure 4. Gate–Source Voltage versus Case Temperature MRF151 3 TYPICAL CHARACTERISTICS 2000 f T, UNITY GAIN FREQUENCY (MHz) I D, DRAIN CURRENT (AMPS) 100 10 TC = 25°C 1 2 20 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VDS = 30 V VDS = 15 V 1000 0 200 0 Figure 5. DC Safe Operating Area 16 18 20 300 Pout , OUTPUT POWER (WATTS) 25 GPS, POWER GAIN (dB) 6 10 14 8 12 ID, DRAIN CURRENT (AMPS) 4 Figure 6. Common Source Unity Gain Frequency versus Drain Current 30 20 15 VDD = 50 V IDQ = 250 mA Pout = 150 W 10 5 2 2 5 VDD = 50 V 200 f = 175 MHz IDQ = 250 mA 100 0 0 5 10 15 100 Figure 7. Power Gain versus Frequency 200 25 300 VDD = 50 V 200 40 V 100 10 30 f, FREQUENCY (MHz) 20 0 f = 30 MHz IDQ = 250 mA 0 1 2 3 Pin, INPUT POWER (WATTS) 4 5 Figure 8. Output Power versus Input Power IMD, INTERMODULATION DISTORTION 25 d3 35 d5 45 IDQ = 250 mA 55 VDD = 50 V, f = 30 MHz, TONE SEPARATION = 1 kHz 25 35 d3 45 55 d5 0 20 40 IDQ = 500 mA 80 60 100 120 140 160 Pout, OUTPUT POWER (WATTS PEP) 180 200 Figure 9. IMD versus Pout MRF151 4 MOTOROLA RF DEVICE DATA 150 f = 175 MHz 100 Zin 30 150 15 30 15 7.5 7.5 f = 175 MHz 100 ZOL* 4 Zo = 10 Ω VDD = 50 V IDQ = 250 mA Pout = 150 W 2 4 2 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 10. Series Equivalent Impedance RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate–to–drain (Cgd), and gate– to–source (C gs ). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 6 may give the designer additional information on the capabilities of this device. The graph represents the MOTOROLA RF DEVICE DATA small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gate of this device is essentially capacitor. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn– on of the device due to voltage build–up on the input capacitor due to leakage currents or pickup. MRF151 5 Gate Protection — This device does not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DC BIAS The MRF151 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF151 was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias sytem. DESIGN CONSIDERATIONS The MRF151 is an RF Power, MOS, N–channel enhancement mode field–effect transistor (FET) designed for HF and VHF power amplifier applications. GAIN CONTROL Power output of the MRF151 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MRF151 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211–11 ISSUE N MOTOROLA RF DEVICE DATA MRF151 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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