Freescale Semiconductor Technical Data MRF1535T1 Rev. 6, 1/2005 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • Broadband−Full Power Across the Band: 135−175 MHz 400−470 MHz 450−520 MHz • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • N Suffix Indicates Lead−Free Terminations • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 520 MHz, 35 W, 12.5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 1264−09, STYLE 1 TO−272 PLASTIC MRF1535T1(NT1) CASE 1264A−02, STYLE 1 TO−272 STRAIGHT LEAD PLASTIC MRF1535FT1(FNT1) Table 1. Maximum Ratings Rating Symbol Value Unit Drain−Source Voltage VDSS −0.5, +40 Vdc Gate−Source Voltage VGS ± 20 Vdc ID 6 Adc PD 135 0.50 W W/°C Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Value Unit RθJC 0.90 °C/W Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22−A113, IPC/JEDEC J−STD−020 1. Calculated based on the formula PD = Rating Package Peak Temperature Unit 1 260 °C TJ – TC RθJC NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 — — Vdc Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate−Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS — — 0.3 µAdc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 400 µA) VGS(th) 1 — 2.6 Vdc Drain−Source On−Voltage (VGS = 5 Vdc, ID = 0.6 A) RDS(on) — — 0.7 Ω Drain−Source On−Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — — 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss — — 250 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss — — 150 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss — — 20 pF 10 — — 50 — — Off Characteristics Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) On Characteristics Dynamic Characteristics RF Characteristics (In Freescale Test Fixture) Common−Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Load Mismatch (VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) Gps η Ψ dB % No Degradation in Output Power Before and After Test MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 2 RF Device Data Freescale Semiconductor B1 C1, C9, C20, C23 C2, C5 C3, C15 C4, C6, C19 C7 C8 C10, C21 C11, C22 C12, C13 C14 C16 C17 C18 L1 L2 L3 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Ferroxcube #VK200 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 33 pF, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 10 µF, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 150 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitor 68 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 51 pF, 100 mil Chip Capacitor 17.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #26 AWG, 0.250″ ID 1 Turn, #26 AWG, 0.240″ ID 4 Turn, #24 AWG, 0.180″ ID Type N Flange Mounts 6.5 Ω, 1/4 W Chip Resistor 39 Ω Chip Resistor (0805) 1.2 kΩ, 1/8 W Chip Resistor 33 kΩ, 1/4 W Chip Resistor 0.970″ x 0.080″ Microstrip 0.380″ x 0.080″ Microstrip 0.190″ x 0.080″ Microstrip 0.160″ x 0.080″ Microstrip 0.110″ x 0.200″ Microstrip 0.490″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip Glass Teflon®, 31 mils Figure 1. 135 − 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 − 175 MHz +, +, +,- &&!&$$&"'% &&!&"#$% * +, +, +,- * * . / '0 . / '0 () ! "#$% Figure 2. Output Power versus Input Power * ! "#$% Figure 3. Input Return Loss versus Output Power MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS, 135 − 175 MHz . / '0 +,h&#&! !3&"4% #&"'% +,- +, +,- ! "#$% h&#&! !3&"4% +, +,- +, +,- +, +,- . / '0 () . '2 . / '0 () . '2 1 #$ ! "2#% 1 #$ ! "2#% Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current h&#&! !3&"4% +,- +,- +,- Figure 5. Drain Efficiency versus Output Power &&!&"#$% ! "#$% Figure 4. Gain versus Output Power &&!&"#$% +,- . / '0 +,- 1 . 2# () . '2 $3 #! "$% Figure 8. Output Power versus Supply Voltage +,- +, +,- 1 . 2# () . '2 $3 #! "$% Figure 9. Drain Efficiency versus Supply Voltage MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 4 RF Device Data Freescale Semiconductor B1 C1 C2 C3 C4 C5 C6, C7 C8, C15, C16 C9 C10, C14, C25 C11, C22 C12, C24 C13, C23 C17, C18 C19 C20 C21 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z8 Z6, Z7 Z9 Z10 Board Ferroxcube VK200 160 pF, 100 mil Chip Capacitor 3 pF, 100 mil Chip Capacitor 3.6 pF, 100 mil Chip Capacitor 2.2 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 16 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 43 pF, 100 mil Chip Capacitor 160 pF, 100 mil Chip Capacitors 10 µF, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 µF, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 8.2 pF, 100 mil Chip Capacitor 1.8 pF, 100 mil Chip Capacitor 47.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 500 Ω Chip Resistor (0805) 1 kΩ Chip Resistor (0805) 33 kΩ, 1/8 W Chip Resistor 0.480″ x 0.080″ Microstrip 1.070″ x 0.080″ Microstrip 0.290″ x 0.080″ Microstrip 0.160″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip 0.120″ x 0.223″ Microstrip 1.380″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip Glass Teflon®, 31 mils Figure 10. 450 − 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 − 520 MHz +,- &&!&$$&"'% &&!&"#$% +,- +,- +,- . / '0 * +,* +, +, +,- . / '0 * () ! "#$% ! "#$% Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS, 450 − 520 MHz #&"'% h&#&! !3&"4% +,- +, +,- . / '0 +,- . / '0 ! "#$% Figure 14. Drain Efficiency versus Output Power +,- h&#&! !3&"4% &&!&"#$% ! "#$% Figure 13. Gain versus Output Power +, +,- +, +,- +, +,- +,- . / '0 () . '2 . / '0 () . '2 1 #$ ! "2#% 1 #$ ! "2#% Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current h&#&! !3&"4% &&!&"#$% +,- +,- +, +,- +,- +,- +,- +,1 . 2# () . '2 $3 #! "$% Figure 17. Output Power versus Supply Voltage +, +, +,- +,- 1 . 2# () . '2 $3 #! "$% Figure 18. Drain Efficiency versus Supply Voltage MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 6 RF Device Data Freescale Semiconductor . Ω () 5 6 . +,- 6 . +,- 6 . +,- 6 . +,- 6 . +,- 5 6 . +,- 6 . +,- 6 . +,() . / 1 . 2# . . / 1 . 2# . Zin f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω 135 5.0 + j0.9 1.7 + j0.2 450 0.8 − j1.4 1.0 − j0.8 155 5.0 + j0.9 1.7 + j0.2 470 0.9 − j1.4 1.1 − j0.6 175 3.0 + j1.0 1.3 + j0.1 500 1.0 − j1.4 1.1 − j0.6 520 0.9 − j1.4 1.1 − j0.5 = Complex conjugate of source impedance. Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. )7 +809(): ;<=> 7 +809(): ;<=> ;?(0; )';= ;@ Z in Z * OL Figure 19. Series Equivalent Input and Output Impedance MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 7 Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 250 mA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.89 −173 8.496 83 0.014 −26 0.76 −170 100 0.90 −175 3.936 72 0.014 −14 0.79 −170 150 0.91 −175 2.429 63 0.011 −23 0.82 −170 200 0.92 −175 1.627 57 0.010 −44 0.86 −170 250 0.94 −176 1.186 53 0.007 −16 0.88 −170 300 0.95 −176 0.888 49 0.005 −44 0.91 −171 350 0.96 −176 0.686 48 0.005 36 0.92 −170 400 0.96 −176 0.568 44 0.005 −1 0.94 −171 450 0.97 −176 0.457 44 0.004 49 0.94 −172 500 0.97 −176 0.394 44 0.003 −51 0.95 −171 550 0.98 −176 0.332 42 0.001 31 0.95 −173 600 0.98 −177 0.286 41 0.013 99 0.94 −173 IDQ = 1.0 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.90 −173 8.49 83 0.006 −39 0.86 −176 100 0.90 −175 3.92 72 0.009 −5 0.86 −176 150 0.91 −175 2.44 63 0.006 7 0.87 −176 200 0.92 −175 1.62 57 0.008 21 0.88 −175 250 0.94 −176 1.19 53 0.006 8 0.89 −174 300 0.95 −176 0.89 48 0.008 3 0.89 −174 350 0.96 −176 0.69 48 0.007 48 0.91 −174 400 0.96 −176 0.57 44 0.004 41 0.93 −173 450 0.97 −176 0.46 44 0.004 43 0.93 −173 500 0.97 −176 0.39 44 0.003 57 0.94 −173 550 0.98 −176 0.33 41 0.006 62 0.94 −174 600 0.98 −177 0.28 41 0.009 96 0.93 −173 IDQ = 2.0 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.94 −176 9.42 88 0.005 −72 0.89 −177 100 0.94 −178 4.56 82 0.005 4 0.89 −177 150 0.94 −178 2.99 78 0.003 7 0.89 −177 200 0.94 −178 2.14 74 0.005 17 0.90 −176 250 0.95 −178 1.67 71 0.004 40 0.90 −175 300 0.95 −178 1.32 67 0.007 35 0.91 −175 350 0.95 −178 1.08 67 0.005 57 0.92 −174 400 0.96 −178 0.93 63 0.003 50 0.93 −173 450 0.96 −178 0.78 62 0.007 68 0.93 −173 500 0.96 −177 0.68 61 0.004 99 0.94 −173 550 0.97 −177 0.59 58 0.008 78 0.93 −175 600 0.97 −178 0.51 57 0.009 92 0.92 −174 MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 8 RF Device Data Freescale Semiconductor APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common−source, RF power, N−Channel enhancement mode, Lateral Metal−Oxide Semiconductor Field−Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate−to−drain (Cgd), and gate−to−source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain−to−source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter−terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. =8() :' 8; '@ (@@ . :' :@ @@ . :' '@ =@@ . :' :@ $=0; DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full−on condition. This on−resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate−source voltage and drain current. The drain−source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high − on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate−to−source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open−circuited or floating should be avoided. These conditions can result in turn−on of the devices due to voltage build−up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate−to−source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate−to−source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate−drain capacitance. If the gate−to−source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate−threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 9 MOUNTING The specified maximum thermal resistance of 0.9°C/W assumes a majority of the 0.170″ x 0.608″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD−1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large−signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two−port stability analysis with this device’s S−parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small−Signal Design Using Two−Port Parameters” for a discussion of two port network theory and stability. MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 10 RF Device Data Freescale Semiconductor NOTES MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 11 NOTES MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 12 RF Device Data Freescale Semiconductor NOTES MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS A E1 B r1 6 4 b2 4X 888 + 1 # D1 888 + DRAIN ID # 5 2X b1 888 5 + 2 # D 4X e 4 3 6 4X b3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ DRAIN ID NOTE 6 3 2 1 E2 VIEW Y−Y E C SEATING PLANE D SEATING PLANE A DATUM PLANE H E2 Y Y A1 L q A2 $3! A / / / / / / c1 $! "++% # $! "++% $! "++% #! $! "++% !$A / +!$A , / / !! +!$$ # !#!$ ! #$+! 3/+ / / #+ #! *,* $ #! # !# # $ ! , ,! !# ,!! ,! !# !B$ ,! #$ 3 # ,! ,! # !/ / +!$ # ! ! + $/ ##! $ $ / ! $!/ +!$ # ! ! + +$+#, # #! !!+! # #+ #! *,*/ / +!$$ C # C ! #+# $/ ##! #+# $ $,# ! / # !B!$$ ,! C # C +!$$ # +#B++ +#!# / / $$,#, !!$!$ ,! !B$! #!# ,! ,!# $/ DIM A A1 A2 D D1 E E1 E2 L b1 b2 b3 c1 e r1 q aaa INCHES MIN MAX / / / / / / / / / / / / / / / / / / / / / / / / / / /&$ / / &_ &_ / MILLIMETERS MIN MAX / / / / / / / / / / / / / / / / / / / / / / / / / / /&$ / / _ _ / CASE 1264−09 ISSUE J TO−272 PLASTIC MRF1535T1(NT1) MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 14 RF Device Data Freescale Semiconductor 2X 888 4X + P + E2 # b2 888 A E1 B # 4 1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 6 DRAIN ID 2X b1 888 + # 5 2 D D2 5 4X e 6 3 4 4X b3 D1 888 + # E A SEATING PLANE F Y NOTE 5 3 2 1 CCC # VIEW Y−Y c1 D DRAIN ID ZONE "J" Y A1 $3! A / / / / / / 6 A2 $! "++% # $! "++% $! "++% #! $! "++% CASE 1264A−02 ISSUE A TO−272 STRAIGHT LEAD PLASTIC MRF1535FT1(FNT1) !$A / +!$A ,/ / !! +!$$ # !#!$ ! #$+! 3/+ / / +!$$ # ! ! + $/ ##! $ $ / ! $!/ +!$$ # ! ! + +$+#, # #! !!+! # #+ #! *,*/ / +!$$ C # C ! #+# $/ ##! #+# $ $,# ! / # !B!$$ ,! C # C +!$$ # +#B++ +#!# / / $$,#, !!$!$ ,! !B$! #!# ,! ,!# $/ / +!$ # #!$ , ! D 3/ DIM A A1 A2 D D1 D2 E E1 E2 F P b1 b2 b3 c1 e aaa bbb INCHES MIN MAX / / / / / / / / /&$ /&$ / / / / /&$ /&$ / / / / / / / / / / /&$ / / MILLIMETERS MIN MAX / / / / / / / / /&$ /&$ / / / / /&$ /&$ / / / / / / / / / / /&$ / / MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E−mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1−800−521−6274 or +1−480−768−2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005. All rights reserved. MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 Document Number: MRF1535T1 Rev. 6, 1/2005 16 RF Device Data Freescale Semiconductor