MOTOROLA MWIC930GR1

Freescale Semiconductor
Technical Data
MWIC930
Rev. 2, 12/2004
RF LDMOS Wideband Integrated
Power Amplifiers
The MWIC930 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 =
240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
• Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 =
90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 52 dBc @ 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2
VRG2
VDS1
RFin
VDS2/RFout
VRD1
VRG1
VGS1
Quiescent Current
Temperature Compensation
VGS2
Figure 1. Functional Block Diagram
MWIC930R1
MWIC930GR1
746 - 960 MHz, 30 W, 26 - 28 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MWIC930R1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GR1
GND
VRD2
VRG2
VDS1
VRD1
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/
VDS2
VRG1
VGS1
VGS2
NC
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
175
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
°C/W
GSM Application
(Pout = 30 W CW)
Stage 1, 26 Vdc, IDQ = 90 mA
Stage 2, 26 Vdc, IDQ = 240 mA
5.9
1.4
GSM EDGE Application
(Pout = 15 W CW)
Stage 1, 27 Vdc, IDQ = 90 mA
Stage 2, 27 Vdc, IDQ = 240 mA
6.5
1.7
CDMA Application
(Pout = 5 W CW)
Stage 1, 27 Vdc, IDQ = 90 mA
Stage 2, 27 Vdc, IDQ = 240 mA
6.5
1.8
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113D, IPC/JEDEC J - STD - 020C
Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz Offset.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
28
Power Added Efficiency
PAE
Input Return Loss
(f = 880 MHz)
IRL
ACPR
Adjacent Channel Power Ratio
31
—
dB
18
21
—
%
—
- 12
-9
dB
—
- 52
- 48
dBc
Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz<Frequency<920 MHz
Quiescent Current Accuracy over Temperature (2)
Stage 1 with 33.2 kΩ Gate Feed Resistors ( - 30 to 115°C)
Stage 2 with 47.5 kΩ Gate Feed Resistors ( - 30 to 115°C)
—
∆I1QT
∆I2QT
—
%
±2.5
±2.5
Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW
GF
—
0.3
—
dB
Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW
Φ
—
0.6
—
°
Delay
—
3
—
ns
∆Φ
—
±15
—
°
Delay @ Pout = 5 W CW Including Output Matching
Part - to - Part Phase Variation @ Pout = 5 W CW
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977.
(continued)
MWIC930R1 MWIC930GR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 =
240 mA, 921 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
P1dB
—
30
—
W
Power Gain @ Pout = 30 W CW
Gps
—
30
—
dB
Power Added Efficiency @ Pout = 30 W CW
PAE
—
45
—
%
Input Return Loss @ Pout = 30 W CW
IRL
—
- 12
—
dB
Intermodulation Distortion
(15 W, 2 - Tone, 100 kHz Tone Spacing)
IMD
—
- 30
—
dBc
Intermodulation Distortion
(1 W, 2 - Tone, 100 kHz Tone Spacing)
IMD
backoff
—
- 45
—
dBc
Gain Flatness in a 40 MHz Bandwidth @ Pout = 30 W CW
GF
—
0.3
—
dB
Deviation from Linear Phase in a 40 MHz Bandwidth @ Pout = 30 W CW
Φ
—
0.6
—
°
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
3
Z8
VD1
C15
RF
INPUT
C12
C9
Z1
1
2
3
4
5
VD2
16
C6
C5
NC 15
Z7
Z2
Z3
Z4
Z5
C3
14
6
VG1
R1
C13
R3
C10
C7
R2
C14
R4
C11
C8
C1
C2
7
8
9
Z9
NC 13
Quiescent Current
10 NC
Temperature Compensation
11
12
C4
VG2
Z1
Z2
Z3
Z4
Z5
Z6
RF
OUTPUT
Z10
0.0438″ x 0.970″ 50 Ω Microstrip
(not including lead pad)
0.234″ x 0.1183″ Microstrip
(including lead pad)
0.1575″ x 0.9379″ Microstrip
0.08425″ x 0.0729″ Microstrip
0.08425″ x 0.5111″ Microstrip
Z6
Z7
Z8
Z9
Z10
PCB
0.0438″ x 0.2009″ Microstrip
0.5274″ x 0.0504″ Microstrip
0.0504″ x 0.250″ Microstrip
0.880″ x 0.0254″ Microstrip
0.0254″ x 0.250″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 3. MWIC930R1(GR1) Test Fixture Schematic
Table 6. MWIC930R1(GR1) Test Fixture Component Designations and Values
Part
Description
Part Number
Manufacturer
*C1
15 pF High Q Capacitor
ATC600S150JW
ATC
*C2
6.8 pF High Q Capacitor - GSM Fixture
8.2 pF High Q Capacitor - CDMA Fixture
ATC600S6R8CW
ATC600S8R2CW
ATC
*C3
5.6 pF High Q Capacitor
ATC600S5R6CW
ATC
*C4, C5, C7, C8, C9
47 pF High Q Capacitors
ATC600S470JW
ATC
C6, C13, C14, C15
1 µF Chip Capacitors
GRM42 - 2X7R105K050AL
Murata
C10, C11, C12
10 nF Chip Capacitors
C0603C103J5R
Kemet
R1, R2
1 kW, 1/8 W Chip Resistors
RM73B2AT102J
KOA Speer
R3, R4
1 MW, 1/4 W Chip Resistors
RM73B2BT105J
KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1
4
RF Device Data
Freescale Semiconductor
VD1
C15
MWIC930
Rev 0
VD2
C6
C5
C12
RF
Input
C3
C9
C1
C7
R3
RF
Output
C2
C8
C10
C11
C13
C4
R1
VG1
R4
C14
R2
VG2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MWIC930R1(GR1) Test Circuit Component Layout
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
5
−20
34
VDD = 27 Vdc
Pout = 15 W (Avg.)
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
Two−Tone PEP = 30 W
−25
−30
−35
3rd Order
−40
5th Order
−45
−50
7th Order
31
30
85_C
29
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
27
1
100
10
0
5
10
15
20
25
30
35
TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS)
Figure 5. Intermodulation Distortion Products
versus Output Power
Figure 6. Power Gain versus Output Power
32
40
40
38
G ps , POWER GAIN (dB)
Pin = 0 dBm
30
28
3 dBm
26
9 dBm
6 dBm
24
12 dBm
15 dBm
20
10
5
15
20
25
30
TC = −30_C
32
25_C
30
85_C
28
26
VDD = 27 Vdc
Pout = 30 W (CW)
IDQ1 = 90 mA
IDQ2 = 240 mA
20
700
35
750
800
850
900
1000
950
VDD, SUPPLY VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Supply Voltage
Figure 8. Power Gain versus Frequency
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
TC = 85_C
−20
−22
25_C
−24
−30_C
−26
−28
0
34
22
−16
−18
36
24
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
22
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
G ps , POWER GAIN (dB)
25_C
32
28
−55
0.1
IRL, INPUT RETURN LOSS (dB)
TC = −30_C
33
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
40
−40
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
9−Channel IS−95 CDMA
−42
−44
−46
−48
TC = 85_C
25_C
−50
−30_C
−52
−54
−56
−58
−60
0
1
2
3
4
5
6
7
8
9
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 9. Input Return Loss versus Output Power
Figure 10. Adjacent Channel Power Ratio
versus Output Power
10
MWIC930R1 MWIC930GR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
58
TC = −30_C
50
25_C
85_C
45
40
35
30
25
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
20
15
10
0
5
10
15
20
25
30
35
PAE, POWER ADDED EFFICIENCY (%)
PAE, POWER ADDED EFFICIENCY (%)
55
TC = −30_C
56
25_C
54
85_C
52
50
48
46
VDD = 27 Vdc
Pout = 30 W (CW)
IDQ1 = 90 mA
IDQ2 = 240 mA
44
42
40
40
700
750
800
850
900
950
Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 11. Power Added Efficiency versus
Output Power
Figure 12. Power Added Efficiency versus
Frequency
1000
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
7
Zo = 50 Ω
Zload
f = 960 MHz
f = 740 MHz
1
f = 740 MHz
Zin
f = 960 MHz
VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg.
f
MHz
Zin
Ω
Zload
Ω
740
26.61 - j3.68
4.28 + j2.99
760
26.88 - j0.53
4.37 + j2.91
780
28.22 + j2.21
4.39 + j2.79
800
30.57 + j4.31
4.34 + j2.64
820
33.79 + j5.53
4.21 + j2.54
840
37.83 + j5.30
4.06 + j2.52
860
41.92 + j3.42
3.90 + j2.58
880
45.58 - j0.40
3.73 + j2.70
900
47.77 - j5.84
3.59 + j2.93
920
47.83 - j12.15
3.43 + j3.17
940
45.55 - j18.05
3.28 + j3.44
960
41.58 - j22.64
3.13 + j3.75
Zin
= Device input impedance as measured from
RF input to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance
MWIC930R1 MWIC930GR1
8
RF Device Data
Freescale Semiconductor
DRIVER/PRE- DRIVER PERFORMANCE
Z8
VD1
C15
RF
INPUT
C12
C9
Z1
1
2
3
4
5
VD2
16
C6
C5
NC 15
Z7
Z2
Z3
Z4
Z5
C3
14
6
VG1
R1
C13
R3
C10
C7
R2
C14
R4
C11
C8
C1
C2
7
8
9
Z9
NC 13
Quiescent Current
10 NC
Temperature Compensation
11
12
C4
VG2
Z1
Z2
Z3
Z4
Z5
Z6
RF
OUTPUT
Z10
0.0438″ x 0.970″ 50 Ω Microstrip
(not including lead pad)
0.234″ x 0.1183″ Microstrip
(including lead pad)
0.1575″ x 0.9379″ Microstrip
0.08425″ x 0.0729″ Microstrip
0.08425″ x 0.5111″ Microstrip
Z6
Z7
Z8
Z9
Z10
PCB
0.0438″ x 0.2009″ Microstrip
0.5274″ x 0.0504″ Microstrip
0.0504″ x 0.250″ Microstrip
0.880″ x 0.0254″ Microstrip
0.0254″ x 0.250″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 14. MWIC930R1(GR1) Test Fixture Schematic —
Alternate Characterization for Driver/Pre - Driver Performance
Table 7. MWIC930R1(GR1) Test Fixture Component Designations and Values —
Alternate Characterization for Driver/Pre - Driver Performance
Part
Description
Part Number
Manufacturer
*C1
12 pF High Q Capacitor
ATC600S120JW
ATC
*C2
8.2 pF High Q Capacitor - CDMA Fixture
ATC600S8R2CW
ATC
*C3
5.6 pF High Q Capacitor
ATC600S5R6CW
ATC
*C4, C5, C7, C8, C9
47 pF High Q Capacitors
ATC600S470JW
ATC
C6, C13, C14, C15
1 µF Chip Capacitors
GRM42 - 2X7R105K050AL
Murata
C10, C11, C12
10 nF Chip Capacitors
C0603C103J5R
Kemet
R1, R2
1 kW, 1/8 W Chip Resistors
RM73B2AT102J
KOA Speer
R3, R4
1 MW, 1/4 W Chip Resistors
RM73B2BT105J
KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
9
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
DRIVER/PRE- DRIVER PERFORMANCE
−60
−61
ACPR
−62
System Noise Floor
−63
VDD = 27 Vdc
IDQ1 = 105 mA, IDQ2 = 230 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 Through 13
−64
−65
20
22
24
26
28
30
Pout, OUTPUT POWER (dBm)
Figure 15. Single - Carrier N - CDMA ACPR
versus Output Power
MWIC930R1 MWIC930GR1
10
RF Device Data
Freescale Semiconductor
Zo = 50 Ω
Zin
f = 740 MHz
f = 960 MHz
f = 740 MHz
Zload
f = 960 MHz
VDD = 27 Vdc, IDQ1 = 105 mA, IDQ2 = 230 mA, Pout = 5 W Avg.
f
MHz
Zin
Ω
Zload
Ω
740
53.944 + j6.745
2.535 + j1.662
760
54.452 + j7.112
2.602 + j1.080
780
55.006 + j7.440
2.688 + j0.548
800
55.549 + j7.656
2.659 + j0.064
820
55.604 + j7.855
2.615 + j0.329
840
55.190 + j7.835
2.568 + j0.450
860
55.110 + j7.410
2.494 + j0.620
880
55.752 + j4.763
2.444 + j0.650
900
45.606 + j5.832
2.440 + j0.689
920
49.206 + j9.284
2.134 + j0.930
940
49.939 + j9.030
2.155 + j0.835
960
50.088 + j8.752
2.095 + j1.235
Zin
= Device input impedance as measured from
RF input to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance —
Alternate Characterization for Driver/Pre - Driver Performance
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
11
NOTES
MWIC930R1 MWIC930GR1
12
RF Device Data
Freescale Semiconductor
NOTES
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
r1
C A B
2X
E1
B
aaa
A
NOTE 6
M
PIN ONE
INDEX
4X
aaa
M
b1
C A
6X
e1
4X
e2
2X
e3
e
D1
aaa
b3
aaa M C A
b2
C A
D M
M
10X
b
aaa
M
C A
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
N
E
VIEW Y - Y
DATUM
PLANE
H
A
c1
C
SEATING
PLANE
F
Y
ZONE "J"
E2
Y
A1
7 A2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09
ISSUE J
TO - 272 WB - 16
PLASTIC
MWIC930R1
DIM
A
A1
A2
D
D1
E
E1
E2
F
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
aaa
INCHES
MIN
MAX
.100
.104
.038
.044
.040
.042
.928
.932
.810 BSC
.551
.559
.353
.357
.346
.350
.025 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.96
1.12
1.02
1.07
23.57
23.67
20.57 BSC
14.00
14.20
8.97
9.07
8.79
8.89
0.64 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
.10
MWIC930R1 MWIC930GR1
14
RF Device Data
Freescale Semiconductor
E1
r1
aaa M C A B
2X
A
B
4X
PIN ONE
INDEX
aaa
M
b1
C A
6X
e1
4X
e2
2X
e3
b3
aaa M C A
e
D1
aaa
M
D
M
b2
C A
b
C A
10X
aaa
M
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
NOTE 6
N
E2
VIEW Y - Y
E
DETAIL Y
DATUM
PLANE
H
A2
A
c1
E2
Y
Y
L1
t
L
GAGE
PLANE
A1
DETAIL Y
C
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SINK.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
t
aaa
INCHES
MIN
MAX
.100
.104
.001
.004
.099
.110
.928
.932
.810 BSC
.429
.437
.353
.357
.346
.350
.018
.024
.01 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
2°
8°
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.02
0.10
2.51
2.79
23.57
23.67
20.57 BSC
10.90
11.10
8.97
9.07
8.79
8.89
4.90
5.06
0.25 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
2°
8°
.10
CASE 1329A - 03
ISSUE B
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GR1
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
15
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MWIC930R1 MWIC930GR1
MWIC930
Rev. 2, 12/2004
16
RF Device Data
Freescale Semiconductor