BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively. INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K Ω R 2 T yp.= 230 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD677/A BD679/A BD681 PNP BD678/A BD680/A BD682 V CBO Collector-Base Voltage (IE = 0) 60 80 100 V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A 6 A 0.1 A IC I CM IB Collector Peak Current Base Current o P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature 40 V V W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. September 1997 1/6 BD677/677A/678/678A/679/679A/680/680A/681/682 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. I CBO Collector Cut-off Current (IE = 0) V CE = rated V CBO V CE = rated V CBO I CEO Collector Cut-off Current (IB = 0) V CE = half rated V CEO I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Collector-Emitter Sustaining Voltage I C = 50 mA for BD677/677A/678/678A for BD679/679A/680/680A for BD681/682 Collector-Emitter Saturation Voltage for BD677/678/679/680/681/682 I C = 1.5 A I B = 30 mA for BD677A/678A/679A/680A IB = 40 mA IC = 2 A V CEO(sus )∗ V CE(sat )∗ Base-Emitter Voltage V BE ∗ DC Current G ain h FE∗ hf e Small Signal Current Gain T C = 100 o C for BD677/678/679/680/681/682 I C = 1.5 A V CE = 3 V for BD677A/678A/679A/680A V CE = 3 V IC = 2 A V CE = 3 V f = 1MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Max. Un it 0.2 2 mA mA 0.5 mA 2 mA 60 80 100 for BD677/678/679/680/681/682 V CE = 3 V I C = 1.5 A for BD677A/678A/679A/680A V CE = 3 V IC = 2 A I C = 1.5 A Typ . Derating Curve 750 750 1 V V V 2.5 V 2.8 V 2.5 V 2.5 V BD677/677A/678/678A/679/679A/680/680A/681/682 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 BD677/677A/678/678A/679/679A/680/680A/681/682 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 5/6 BD677/677A/678/678A/679/679A/680/680A/681/682 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6