STMICROELECTRONICS MJD44

MJD44H11
MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
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■
■
SGS-THOMSON PREFERRED SALESTYPES
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
FAST SWITCHING SPEED
APPLICATIONS
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GENERAL PURPOSE SWITCHING
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GENERAL PURPOSE AMPLIFIER
3
1
DESCRIPTION
The MJD44H11 is a silicon multiepitaxial planar
NPN transistors mounted in DPAK plastic
package.
It is inteded for various switching and general
purpose applications.
The complementary PNP type is MJD45H11.
DPAK
(TO-252)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
MJD44H11
PNP
MJD45H11
Uni t
V CEO
Collector-Emitter Voltage (I B = 0)
80
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
8
A
Collector Peak Current
16
A
IC
I CM
o
P t ot
Total Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
Max. O perating Junction Temperature
20
W
-55 to 150
o
C
150
o
C
For PNP types the values are intented negative.
July 1997
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MJD44H11 / MJD45H11
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
6.25
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
Test Cond ition s
I C = 30 mA
Min.
Typ .
Max.
80
Un it
V
I CES
Collector Cut-off
Current
V CB = rated V CEO V BE = 0
10
µA
I EBO
Emitter Cut-off Current
V EB = 5V
50
µA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 8 A
I B = 0.4 A
1
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 8 A
I B = 0.8 A
1.5
V
DC Current G ain
IC = 2 A
IC = 4 A
V CE = 1 V
V CE = 1 V
h FE∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
∗ For PNP types the values are intented negative.
Safe Operating Area
2/5
Derating Curves
60
40
MJD44H11 / MJD45H11
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
3/5
MJD44H11 / MJD45H11
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
4/5
MJD44H11 / MJD45H11
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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