TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) DESCRIPTION The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications. The complementary PNP type is TIP127FP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN T IP122FP PNP T IP127FP Uni t V CBO Collector-Base Voltage (IE = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 5 A Collector Peak Current 8 A IC I CM IB Base Current o P t ot Total Dissipation at T case ≤ 25 C o T amb ≤ 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature 0.1 A 29 2 W W -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. April 1998 1/4 TIP122FP / TIP127FP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4.3 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CEO Collector Cut-off Current (IB = 0) Parameter V CE = 50 V 0.5 mA I CBO Collector Cut-off Current (IB = 0) V CE = 100 V 0.2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA VCEO(s us) * Collector-Emitter Sustaining Voltage (IB = 0) V CE(s at)* V BE(on) * h FE * Collector-Emitter Saturation Voltage Test Cond ition s I C = 30 mA IC = 3 A IC = 5 A 2/4 Typ . 100 IB = 12 mA IB = 20 mA Base-Emitter Voltage IC = 3 A VCE = 3 V DC Current G ain I C = 0.5 A IC = 3 A VCE = 3 V VCE = 3 V * For PNP types voltage and current values are negative. Min. 1000 1000 V 2 4 V V 2.5 V TIP122FP / TIP127FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 3/4 TIP122FP / TIP127FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4