2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 230 Ω R1 Typ. = 7 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value PNP 2N6036 NPN 2N6039 Uni t V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A 8 A 0.1 A IC I CM IB Collector Peak Current Base Current o P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj Max. O perating Junction Temperature 40 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/6 2N6036/2N6039 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 83.3 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Max. Un it 0.1 0.5 mA mA V CE = rated V CBO 0.1 mA Collector Cut-off Current (IB = 0) V CE = rated V CEO 0.1 mA Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA I CEX Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEO V CE = rated V CEO I CBO Collector Cut-off Current (IE = 0) I CEO I EBO V CEO(sus )∗ Collector-Emitter Sustaining Voltage Min. Tc = 125 o C I C = 100 mA Typ . 80 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 4 A IB = 8 mA IB = 40 mA 2 3 V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 4 A IB = 40 mA 4 V V BE ∗ Base-Emitter Voltage IC = 2 A V CE = 3 V 2.8 V h FE∗ DC Current G ain I C = 0.5 A IC = 2 A IC = 4 A VCE = 3 V V CE = 3 V V CE = 3 V Small Signal Current Gain I C = 0.75 A V CE = 10 V Collector Base Capacitance IE = 0 VCB = 10 V for NPN typ es for PNP types hf e C CBO 500 750 100 f = 1KHz 2/6 25 f = 1MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 15000 Derating Curve 100 200 pF pF 2N6036/2N6039 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) Base Emitter Saturation Voltage (NPN type) Base Emitter Saturation Voltage (PNP type) 3/6 2N6036/2N6039 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 4/6 2N6036/2N6039 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 5/6 2N6036/2N6039 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6