BU911 MEDIUM VOLTAGE NPN IGNITION DARLINGTON ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: SOLENOID / RELAY DRIVERS ■ MOTOR CONTROL ■ ELECTRONIC AUTOMOTIVE IGNITION ■ 3 1 DESCRIPTION The BU911 is an NPN transistor in monolithic Darlington configuration Jedec TO-220 plastic package, designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers, etc. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R 1 = 1.7 kΩ R 2 = 50 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 450 400 5 6 10 1 60 -65 to 150 150 Unit V V V A A A W o C o C 1/4 BU911 THERMAL DATA R thj-case Thermal Resistance Junction-case o 2.08 Max C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Test Conditions Collector Cut-off Current (V BE = 0) V CE =450 V V CE =450 V I CEO Collector Cut-off Current (I B = 0) V CE = 400 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Min. o T case = 125 C V CEO(sus) ∗ Collector-emitter I = 100 mA Sustaining Voltage (I B = 0) C Typ. Max. Unit 1 5 mA mA 1 mA 5 mA 400 V V CE(sat) ∗ Collector-emitter Saturation Voltage I C = 2.5 A IC = 4 A IB = 50 mA I B = 200 mA 1.8 1.8 V V V BE(sat) ∗ Base-emitter Saturation Voltage I C = 2.5 A IC = 4 A I B = 50 mA I B = 200 mA 2.2 2.5 V V VF∗ Diode Forward Voltage IF = 4 A 2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/4 BU911 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BU911 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4