BUF405A BUF405AFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ ■ ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINE APPLICATIONS 100 KHz SWITCHING SPEED LOW COST DRIVE CIRCUITS LOW DYNAMIC SATURATION 3 3 APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ MOTOR DRIVERS DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability. The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature. 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e BUF405A V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at T c = 25 C Storage Temperature Max O peration Junction T emperature January 1999 Un it BUF405AF P 1000 450 7 7.5 15 3 4.5 80 39 -65 to 150 150 V V V A A A A W o C o C 1/6 BUF405A / BUF405AFP THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case T O-220 TO-220F P 1.56 3.2 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Min. Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV I CEV Collector Cut-off Current (I B = 0) V CE = V CEV V BE = -1.5 V V CE = V CEV V BE = -1.5 V T c =100 o C I EBO Emitter Cut-off Current (I C = 0) V BE = 5 V I CER V CEO(sus )∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat )∗ V BE(s at)∗ di c /dt V CE (3µs) V CE (5µs) o I C = 200 mA L = 25 mH Emitter Base Voltage (I C = 0) I E = 50 mA Collector-Emitter Saturation Voltage IC IC IC IC = = = = 2.5 A 2.5 A 5 A 5 A IB = 0.25 A IB = 0.25 A IB = 1 A IB = 1 A IC IC IC IC = = = = 2.5 A 2.5 A 5 A 5 A IB IB IB IB Base-Emitt er Saturation Voltage Rate of rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage = = = = 0.25 A 0.25 A 1 A 1 A V CC = 300 V I B1 = 0.375 A Un it 0.1 0.5 mA mA 0.1 0.5 mA mA 1 mA V 7 V 0.8 o 2.8 0.5 o T c =100 C 2 0.9 o 1.5 T c =100 C 1.1 o Tc =100 C V CC = 300 V R C = 0 t p= 3 µs o I B1 = 0.375 A Tj =25 C I B1 = 0.375 A Tj =100 oC o Tj =100 C I B1 = 1.5 A V CC = 300 V I B1 = 0.375 A Max. 450 Tc =100 C 1.5 40 2.1 R C = 120 Ω Tj =25 oC o T j =100 C I C = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH V CC = 50 V R BB = 2.4 Ω I B1 = 0.25 A ts tf tc INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime I C = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH V CC = 50 V R BB = 2.4 Ω I B1 = 0.25 A o Tj =100 C Maximum Collector Emitter Voltage without Snubber IC = 2.5 A V BB = - 5 V V c la mp = 400 V L = 1 mH VCC = 50 V R BB = 2.4 Ω I B1 = 0.25 A Tj =125 oC INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime I C = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH V CC = 50 V R BB = 0.6 Ω I B1 = 0.25 A V V V V 8 V V 4 V V 1.1 µs µs µs 0.8 0.05 0.08 1.8 0.1 0.18 500 V V V V A/µs A/µs A/µs 30 60 R C = 120 Ω o T j =25 C o T j =100 C INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime ts tf tc Typ . T c = 100 C ts tf tc V CEW 2/6 Test Cond ition s µs µs µs V 1.5 0.04 0.07 µs µs µs BUF405A / BUF405AFP ELECTRICAL CHARACTERISTICS (continued) Symb ol Parameter Test Cond ition s INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime I C = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH VCC = 50 V R BB = 0.6 Ω IB1 = 0.25 A o T j =100 C Maximum Collector Emitter Voltage without Snubber IC = 2.5 A V BB = 0 V c la mp = 400 V L = 1 mH V CC = 50 V R BB = 0.6 Ω I B1 = 0.25 A o T j =125 C ts tf tc INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime IC = 5 A V BB = -5 V V c la mp = 400 V L = 0.5 mH VCC = 50 V R BB = 2.4 Ω IB1 = 1 A ts tf tc INDUCTIVE LO AD Storage Time Fall Time Cross O ver T ime IC = 5 A V BB = - 5 V V c la mp = 400 V L = 0.5 mH VCC = 50 V R BB =2.4 Ω IB1 = 1 A o Tj =100 C Maximum Collector Emitter Voltage without Snubber ICWoff = 7.5 A V BB = - 5 V L = 0.33 mH o T j =125 C V CC = 50 V R BB = 2.4 Ω I B1 = 1.5 A ts tf tc V CEW V CEW Min. Typ . Max. Un it 3 0.15 0.25 µs µs µs 500 V µs µs µs 1.9 0.06 0.12 3.2 0.12 0.3 400 µs µs µs V ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % Turn-on Switching Test Circuit 1 Fast electronic switch 2 Non-inductive Resistor Turn-off Switching Test Circuit 1 F ast electronic switc h 2 Non-inductive Resistor 3 F ast recovery rectifier 3/6 BUF405A / BUF405AFP TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 4/6 BUF405A / BUF405AFP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 5/6 BUF405A / BUF405AFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6