STMICROELECTRONICS BUH1015

BUH1015
BUH1015HI

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
3
3
DESCRIPTION
The BUH1015 and BUH1015HI are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and use a Hollow
Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
2
2
1
1
TO-218
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Valu e
Un it
V CBO
Collector-Base Voltage (I E = 0)
1500
V
V CEO
Collector-Emitter Voltage (IB = 0)
700
V
VEBO
Emitter-Base Voltage (IC = 0)
10
V
Collector Current
14
A
Collector Peak Current (tp < 5 ms)
18
A
Base Current
8
A
11
A
IC
I CM
IB
I BM
Parameter
Base Peak Current (tp < 5 ms)
o
P tot
T otal Dissipation at Tc = 25 C
T s tg
Storage Temperature
Tj
Max. Operating Junction T emperature
December 1999
160
70
W
-65 to 150
o
C
150
o
C
1/8
BUH1015/BUH1015HI
THERMAL DATA
TO -218 ISOW AT T218
R t hj-ca se
Thermal Resistance Junction-case
Max
0.78
o
1.8
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
Tj = 125 o C
Max.
Un it
0.2
2
mA
mA
100
µA
I C = 100 mA
700
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
10
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 10 A
IB = 2 A
1.5
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 10 A
IB = 2 A
1.5
V
DC Current G ain
I C = 10 A
I C = 10 A
V CE = 5 V
V CE = 5 V
V EBO
hFE∗
o
T j = 100 C
ts
tf
RESISTIVE LO AD
Storage Time
Fall T ime
V CC = 400 V
I B1 = 2 A
IC = 10 A
I B2 = -6 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
I C = 10 A
I B1 = 2 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 6 A
f = 64 KHz
I B1 = 1 A
V beo ff = - 2 V
π

V c eflybac k = 1100 sin 106 t
5


f = 31250 Hz
IB2 = -6 A
π

V c eflybac k = 1200 sin 106 t V
5

7
5
10
14
1.5
110
µs
ns
4
220
µs
ns
3.7
200
µs
ns
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area For TO-218
2/8
Safe Operating Area For ISOWATT218
BUH1015/BUH1015HI
Thermal Impedance for TO-218
Thermal Impedance for ISOWATT218
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/8
BUH1015/BUH1015HI
Power Losses at 64 KHz
Switching Time Inductive Load at 64KHz
(see figure 2)
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
Tj = 100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistor to turn off (retrace phase). Most of the
dissipation, especially in
the deflection
application, occurs at switch-off so it is essential
to determine the value of IB2 which minimizes
power losses, fall time tf and, consequently, T j. A
new set of curves have been defined to give total
power losses, ts and tf as a function of IB1 at 64
KHz scanning frequencies for choosing the
4/8
optimum drive. The test circuit is illustrated in
figure 1.
The values of L and C are calculated from the
following equations:
1
1
L (IC)2 = C (VCEfly)2
2
2
1
ω = 2 πf =
L C

√
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUH1015/BUH1015HI
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/8
BUH1015/BUH1015HI
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
6/8
1
2
3
P025A
BUH1015/BUH1015HI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
3.7
0.138
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
0.146
P025C/A
7/8
BUH1015/BUH1015HI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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