STMICROELECTRONICS BUH315D

BUH315D

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE.
3
APPLICATIONS
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HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The
BUH315D
is
manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (I E = 0)
1500
V
V CEO
Collector-Emitter Voltage (IB = 0)
700
V
V EBO
Emitter-Base Voltage (IC = 0)
10
V
6
A
IC
I CM
IB
Parameter
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
I BM
Base Peak Current (tp < 5 ms)
P t ot
Total Dissipation at Tc = 25 C
T stg
St orage Temperature
Tj
o
Max. Operating Junction Temperature
December 1999
12
A
3
A
5
A
44
W
-65 to 150
o
C
150
o
C
1/7
BUH315D
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
2.8
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
200
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
300
mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 3 A
1.5
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
IC = 3 A
1.5
V
DC Current Gain
IC = 3 A
IC = 3 A
h F E∗
IB = 1 A
IB = 1 A
V CE = 5 V
V CE = 5 V
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
V CC = 400 V
I B1 = 1 A
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 3 A
I B1 = 1 A
VF
Diode F orward Voltage I F = 3 A
o
T j = 100 C
4
2.5
IC = 3 A
I B2 = -1.5 A
f = 15625 Hz
IB2 = 1.5 A
π

V c eflybac k = 1050 sin  106 t
5


1.8
200
V
2/7
2.7
300
Thermal Impedance
µs
ns
µs
ns
2.7
350
2.5
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
9
V
BUH315D
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
(see figure 2)
3/7
BUH315D
Switching Time Resistive Load at 16 KHz
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at 16 KHz scanning frequencies
the optimum negative drive. The test circuit is
illustrated in fig. 1.
4/7
Inductance L 1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
1
L (IC)2 = C (VCEfly)2
2
2
1
ω = 2 πf =
L C

√
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUH315D
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH315D
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
3.7
0.138
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
6/7
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
BUH315D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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