STL35NF3LL N-CHANNEL 30V - 0.0055Ω - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET TARGET DATA ■ ■ ■ TYPE VDSS RDS(on) ID STL35NF3LL 30 V < 0.007 Ω 35 A TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. PowerFLAT™(6x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 15 V VGS Gate- source Voltage ID(#) Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C 35 22 A A IDM (●) Drain Current (pulsed) 140 A PTOT Total Dissipation at TC = 25°C 80 W Derating Factor 0.64 W/°C dv/dt(1) Peak Diode Recovery voltage slope TBD V/ns EAS (2) Single Pulse Avalanche Energy TBD J –55 to 150 °C Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area (#) Limited by Wire Bonding October 2001 (1)ISD<35A, di/dt<300A/µs, VDD<V(BR)DSS, T J<T JMAX (2) Starting T j = 25°C, I D = 30A, VDD = 27.5V 1/6 STL35NF3LL THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 1.56 °C/W 50 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 30 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 15V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 17.5 A 0.0055 0.007 Ω VGS = 4.5 V, ID = 17.5A 0.007 0.010 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/6 Parameter Test Conditions Min. Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 17.5 A TBD S VDS = 25 V, f = 1 MHz, VGS = 0 Ciss Input Capacitance 2650 pF Coss Output Capacitance 900 pF Crss Reverse Transfer Capacitance 150 pF STL35NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 17.5 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 15 V, ID = 35 A, VGS = 10 V Typ. Max. Unit TBD ns TBD ns 80 TBD TBD nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 15 V, ID = 17.5 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Typ. Max. TBD TBD Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Max. Unit Source-drain Current Parameter Test Conditions 35 A Source-drain Current (pulsed) 140 A Forward On Voltage ISD = 35 A, VGS = 0 Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD = 35 A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.2 TBD TBD TBD V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STL35NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STL35NF3LL PowerFLAT™(6x5) MECHANICAL DATA mm. inch DIM. MIN. A 0.80 A1 b 0.36 1.00 0.031 0.039 0.014 0.018 0.154 6.00 0.158 0.235 3.05 0.115 1.27 0.65 MAX. 0.191 4.05 2.95 TYP. 0.003 0.48 3.95 e L MIN. 4.89 E E2 MAX. 0.08 D D2 TYP 0.119 0.049 0.85 0.025 0.033 5/6 STL35NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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