IXYS IXTY1N80

High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
VDSS
ID25
RDS(on)
= 800
V
= 750 mA
= 11 Ω
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
750
mA
IDM
TC = 25°C, pulse width limited by TJM
3
A
1.0
A
IAR
EAR
TC = 25°C
5
mJ
EAS
TC = 25°C
100
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 47 Ω
PD
TC = 25°C
3
V/ns
40
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
Weight
TO-220
TO-252
TO-263
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
g
g
g
300
°C
D (TAB)
GD
S
TO-263 AA (IXTA)
G
S
D (TAB)
TO-252 AA (IXTY)
G
S
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
Features
! International standard packages
! High voltage, Low RDS (on) HDMOSTM
process
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
800
VGS(th)
VDS = VGS, ID = 25 µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 500 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
4
0.8
3
TO-220AB (IXTP)
V
TJ = 25°C
TJ = 125°C
9.5
4.5
V
±100
nA
25
500
µA
µA
11
Ω
! Rugged polysilicon gate
! Fast switching times
cell structure
Applications
! Switch-mode
and resonant-mode
power supplies
Flyback inverters
!
! DC choppers
! High frequency
matching
Advantages
! Space savings
! High power density
DS98822C(11/03)
IXTP 1N80 IXTA 1N80
IXTY 1N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 500 mA, pulse test
0.7
Ciss
Coss
0.8
S
220
pF
23
pF
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4
pF
td(on)
11
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
19
ns
td(off)
RG
40
ns
tf
28
ns
QG(on)
8.5
nC
2.5
nC
4.5
nC
QGS
= 47Ω, (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
QGD
RthJC
RthCK
3.1
(IXTP)
0.50
Source-Drain Diode
TO-220 AD Dimensions
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
750
mA
3
A
2
V
1.8
710
TO-263 AA Outline
ns
TO-252 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
Inches
Min.
Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025 0.040
0.035 0.050
0.100 0.115
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1