ECH8660 Ordering number : ENA1358A SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID IDP 4.5 --4.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% 30 --30 Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2×0.8mm) 1unit Total Dissipation PT When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C 1.3 A W Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0V Gate-to-Source Leakage Current IGSS VDS=30V, VGS=0V VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA 30 1.2 Marking : TF V 1 μA ±10 μA 2.6 V Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/6 ECH8660 Continued from preceding page. Parameter Forward Transfer Admittance Symbol Ratings min typ VDS=10V, ID=2A ID=2A, VGS=10V RDS(on)2 ID=1A, VGS=4.5V RDS(on)3 ID=1A, VGS=4V Input Capacitance Ciss VDS=10V, f=1MHz 240 pF Output Capacitance Coss VDS=10V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 30 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 6.2 ns See specified Test Circuit. 11 ns See specified Test Circuit. 17 ns Fall Time td(off) tf See specified Test Circuit. 7.5 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=4.5A 4.4 nC 1.1 nC Rise Time Turn-OFF Delay Time 1 Unit max RDS(on)1 Static Drain-to-Source On-State Resistance | yfs | Conditions 1.66 S 45 59 mΩ 85 119 mΩ 110 155 mΩ Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4.5A VDS=10V, VGS=10V, ID=4.5A 0.64 Diode Forward Voltage VSD IS=4.5A, VGS=0V 0.84 V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA RDS(on)1 ID=--2A, VGS=--10V 45 59 mΩ RDS(on)2 ID=--1A, VGS=--4.5V 71 100 mΩ RDS(on)3 ID=--1A, VGS=--4V 82 115 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 430 pF Output Capacitance Coss VDS=--10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.5 ns Rise Time tr See specified Test Circuit. 26 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 45 ns Fall Time tf See specified Test Circuit. 35 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4.5A 10 nC nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance --30 V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--2A --1.2 2.5 --2.3 4.2 V S Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4.5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd 2.5 nC Diode Forward Voltage VSD VDS=--10V, VGS=--10V, ID=--4.5A IS=--4.5A, VGS=0V --0.85 --1.2 V No. A1358-2/6 ECH8660 Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top View 0.25 2.9 0.15 8 5 2.3 2.8 0 t o 0.02 1 0.25 2 3 Top view 4 4 1 0.65 0.9 0.3 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bot t om View Switching Time Test Circuit [N-channel] VDD=15V VIN ID=2A RL=7.5Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN 0V --10V VOUT D PW=10μs D.C.≤1% G 50Ω 1.0 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT14210 0 C 2 1 VGS=3.0V 0.5 3 0 1 2 --25° 1.5 4 5°C 3.5V 0.2 [Nch] VDS=10V Ta= 7 2.0 0.1 ID -- VGS V V 2.5 0 S 5 3.0 0 50Ω 6 4.0 4.5 10.0V 6.0V 15.0V [Nch] Drain Current, ID -- A Drain Current, ID -- A 3.5 ECH8660 P.G S ID -- VDS 4.0 VOUT G ECH8660 P.G ID= --2A RL=7.5Ω VIN 25° C 10V 0V [P-channel] 4 5 Gate-to-Source Voltage, VGS -- V 3 IT14211 No. A1358-3/6 ECH8660 RDS(on) -- VGS 240 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2A 160 120 80 40 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 40 --40 --20 0 20 40 60 80 100 120 140 160 IT14213 IS -- VSD 7 5 [Nch] VGS=0V 3 2 = Ta C 5° --2 °C 75 5 C 5° 2 3 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.2 --25° C 7 25°C 1.0 1.0 7 5 5°C 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 [Nch] 0.8 1.0 1.2 IT14215 Ciss, Coss, Crss -- VDS 5 [Nch] f=1MHz 3 3 td(off) 2 10 tf 7 5 td(on) tr 3 Ciss 2 100 7 5 Coss Crss 3 2 2 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 10 [Nch] 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 1 2 3 Total Gate Charge, Qg -- nC 5 4 5 IT14218 10 15 20 25 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.5A 9 0 IT14216 VGS -- Qg 10 0 0.6 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 5 0.4 IT14214 SW Time -- ID 7 Switching Time, SW Time -- ns =2A V, I D 10.0 V GS= Ambient Temperature, Ta -- °C VDS=10V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 80 IT16223 | yfs | -- ID 5 A I =1 4.0V, D = VGS 1A , I D= 4.5V = VGS 120 0 --60 16 [Nch] 160 Ta= 7 0 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1A 200 RDS(on) -- Ta 200 Ta=25°C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 30 IT14217 ASO [Nch] IDP=30A PW≤10μs 10 0μ 1m s s 10 ms 10 0m s ID=4.5A DC op era Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT14195 No. A1358-4/6 ECH8660 ID -- VDS --5 VGS= --2.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V --1 0 --1.0 [Pch] --2A 140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 10 7 5 1.0 7 5 -25 =- °C [Pch] 7 Ta 3 2 ° 25 C 5° C 0.1 7 5 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A Switching Time, SW Time -- ns 7 80 60 40 SW Time -- ID --40 --20 0 20 40 60 80 100 120 [Pch] 140 160 IT14189 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.4 --0.6 --0.8 --1.0 --1.2 IT14191 Ciss, Coss, Crss -- VDS 1000 [Pch] f=1MHz 7 td(off) 5 5 tf 3 2 tr 10 td(on) 7 5 3 --0.1 [Pch] Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V --4.0 IT14187 20 --0.01 --0.2 5 7--10 IT14190 Ciss, Coss, Crss -- pF 100 --3.5 A = --1 , ID V 0 . = --4 VGS --1A I = .5V, D 4 = VGS --2A V, I D= --10.0 = V GS 100 3 2 5 7--0.01 2 3 --3.0 120 --10 7 5 3 2 0.01 7 --0.001 2 3 --2.5 Ambient Temperature, Ta -- °C VDS= --10V 3 2 --2.0 140 IT16224 | yfs | -- ID --1.5 RDS(on) -- Ta 0 --60 --16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 --1.0 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --1A --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 160 0 IT14186 RDS(on) -- VGS 180 --2 C --0.5 Ta= 75°C -25°C 25° C --1.0 --3 --25°C --1.5 --4 25°C --3.0V --2.0 0 [Pch] VDS= --10V Ta=7 5° --2.5 ID -- VGS --6 Drain Current, ID -- A --10.0V --3.0 --6. 0V Drain Current, ID -- A --3.5 [Pch] --4. 5V --4. 0V --3 .5V --4.0 Ciss 3 2 Coss 100 Crss 7 5 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 3 --10 IT14192 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14193 No. A1358-5/6 ECH8660 VGS -- Qg --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [Pch] VDS= --10V ID= --4.5A 9 10 11 IT14194 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO [Pch] IDP= --30A PW≤10μs 10 0μ 1m s s ID= --4.5A 10 ms DC op 10 0m s era Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14196 [Nch/Pch] When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14197 Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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