SANYO ECH8660_10

ECH8660
Ordering number : ENA1358A
SANYO Semiconductors
DATA SHEET
ECH8660
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
IDP
4.5
--4.5
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
30
--30
Allowable Power Dissipation
PD
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
Total Dissipation
PT
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
1.3
A
W
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=1mA, VGS=0V
Gate-to-Source Leakage Current
IGSS
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
30
1.2
Marking : TF
V
1
μA
±10
μA
2.6
V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
http://semicon.sanyo.com/en/network
D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/6
ECH8660
Continued from preceding page.
Parameter
Forward Transfer Admittance
Symbol
Ratings
min
typ
VDS=10V, ID=2A
ID=2A, VGS=10V
RDS(on)2
ID=1A, VGS=4.5V
RDS(on)3
ID=1A, VGS=4V
Input Capacitance
Ciss
VDS=10V, f=1MHz
240
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
45
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
30
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
6.2
ns
See specified Test Circuit.
11
ns
See specified Test Circuit.
17
ns
Fall Time
td(off)
tf
See specified Test Circuit.
7.5
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=4.5A
4.4
nC
1.1
nC
Rise Time
Turn-OFF Delay Time
1
Unit
max
RDS(on)1
Static Drain-to-Source On-State Resistance
| yfs |
Conditions
1.66
S
45
59
mΩ
85
119
mΩ
110
155
mΩ
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
0.64
Diode Forward Voltage
VSD
IS=4.5A, VGS=0V
0.84
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
RDS(on)1
ID=--2A, VGS=--10V
45
59
mΩ
RDS(on)2
ID=--1A, VGS=--4.5V
71
100
mΩ
RDS(on)3
ID=--1A, VGS=--4V
82
115
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
430
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
105
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.5
ns
Rise Time
tr
See specified Test Circuit.
26
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
45
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--4.5A
10
nC
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
--30
V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--2A
--1.2
2.5
--2.3
4.2
V
S
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--4.5A
2.0
nC
Gate-to-Drain “Miller” Charge
Qgd
2.5
nC
Diode Forward Voltage
VSD
VDS=--10V, VGS=--10V, ID=--4.5A
IS=--4.5A, VGS=0V
--0.85
--1.2
V
No. A1358-2/6
ECH8660
Package Dimensions
Electrical Connection
unit : mm (typ)
7011A-001
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top View
0.25
2.9
0.15
8
5
2.3
2.8
0 t o 0.02
1
0.25
2
3
Top view
4
4
1
0.65
0.9
0.3
0.07
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Bot t om View
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
ID=2A
RL=7.5Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
0V
--10V
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
1.0
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
1.0
IT14210
0
C
2
1
VGS=3.0V
0.5
3
0
1
2
--25°
1.5
4
5°C
3.5V
0.2
[Nch]
VDS=10V
Ta=
7
2.0
0.1
ID -- VGS
V
V
2.5
0
S
5
3.0
0
50Ω
6
4.0
4.5
10.0V
6.0V
15.0V
[Nch]
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ECH8660
P.G
S
ID -- VDS
4.0
VOUT
G
ECH8660
P.G
ID= --2A
RL=7.5Ω
VIN
25°
C
10V
0V
[P-channel]
4
5
Gate-to-Source Voltage, VGS -- V
3
IT14211
No. A1358-3/6
ECH8660
RDS(on) -- VGS
240
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2A
160
120
80
40
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
40
--40 --20
0
20
40
60
80
100
120
140
160
IT14213
IS -- VSD
7
5
[Nch]
VGS=0V
3
2
=
Ta
C
5°
--2
°C
75
5
C
5°
2
3
3
2
0.1
7
5
2
3
0.1
0.01
0.01
0.2
--25°
C
7
25°C
1.0
1.0
7
5
5°C
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7
[Nch]
0.8
1.0
1.2
IT14215
Ciss, Coss, Crss -- VDS
5
[Nch]
f=1MHz
3
3
td(off)
2
10
tf
7
5
td(on)
tr
3
Ciss
2
100
7
5
Coss
Crss
3
2
2
1.0
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
7
10
10
[Nch]
7
5
3
2
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
1
2
3
Total Gate Charge, Qg -- nC
5
4
5
IT14218
10
15
20
25
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=4.5A
9
0
IT14216
VGS -- Qg
10
0
0.6
Diode Forward Voltage, VSD -- V
VDD=15V
VGS=10V
5
0.4
IT14214
SW Time -- ID
7
Switching Time, SW Time -- ns
=2A
V, I D
10.0
V GS=
Ambient Temperature, Ta -- °C
VDS=10V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
80
IT16223
| yfs | -- ID
5
A
I =1
4.0V, D
=
VGS
1A
, I D=
4.5V
=
VGS
120
0
--60
16
[Nch]
160
Ta=
7
0
Ciss, Coss, Crss -- pF
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=1A
200
RDS(on) -- Ta
200
Ta=25°C
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
30
IT14217
ASO
[Nch]
IDP=30A
PW≤10μs
10
0μ
1m s
s
10
ms
10
0m
s
ID=4.5A
DC
op
era
Operation in this
area is limited by RDS(on).
tio
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm)
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT14195
No. A1358-4/6
ECH8660
ID -- VDS
--5
VGS= --2.5V
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
--1
0
--1.0
[Pch]
--2A
140
120
100
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
10
7
5
1.0
7
5
-25
=-
°C
[Pch]
7
Ta
3
2
°
25
C
5°
C
0.1
7
5
5 7--0.1 2 3
5 7--1.0
2 3
Drain Current, ID -- A
Switching Time, SW Time -- ns
7
80
60
40
SW Time -- ID
--40 --20
0
20
40
60
80
100
120
[Pch]
140
160
IT14189
IS -- VSD
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.4
--0.6
--0.8
--1.0
--1.2
IT14191
Ciss, Coss, Crss -- VDS
1000
[Pch]
f=1MHz
7
td(off)
5
5
tf
3
2
tr
10
td(on)
7
5
3
--0.1
[Pch]
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
--4.0
IT14187
20
--0.01
--0.2
5 7--10
IT14190
Ciss, Coss, Crss -- pF
100
--3.5
A
= --1
, ID
V
0
.
= --4
VGS
--1A
I =
.5V, D
4
=
VGS
--2A
V, I D=
--10.0
=
V GS
100
3
2
5 7--0.01 2 3
--3.0
120
--10
7
5
3
2
0.01
7
--0.001 2 3
--2.5
Ambient Temperature, Ta -- °C
VDS= --10V
3
2
--2.0
140
IT16224
| yfs | -- ID
--1.5
RDS(on) -- Ta
0
--60
--16
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
2
--1.0
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --1A
--0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
160
0
IT14186
RDS(on) -- VGS
180
--2
C
--0.5
Ta=
75°C
-25°C
25°
C
--1.0
--3
--25°C
--1.5
--4
25°C
--3.0V
--2.0
0
[Pch]
VDS= --10V
Ta=7
5°
--2.5
ID -- VGS
--6
Drain Current, ID -- A
--10.0V
--3.0
--6.
0V
Drain Current, ID -- A
--3.5
[Pch]
--4.
5V --4.
0V
--3
.5V
--4.0
Ciss
3
2
Coss
100
Crss
7
5
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
3
--10
IT14192
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT14193
No. A1358-5/6
ECH8660
VGS -- Qg
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
7
5
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
[Pch]
VDS= --10V
ID= --4.5A
9
10
11
IT14194
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
[Pch]
IDP= --30A
PW≤10μs
10
0μ
1m s
s
ID= --4.5A
10
ms
DC
op
10
0m
s
era
Operation in this
area is limited by RDS(on).
tio
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT14196
[Nch/Pch]
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14197
Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1358-6/6