SANYO FW377

FW377
Ordering number : ENA0977
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW377
General-Purpose Switching Device
Applications
Features
•
•
•
For motor drivers, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
VDSS
VGSS
N-channel
P-channel
Unit
35
--35
V
±20
±20
V
ID
ID
6
--5
A
Drain Current (PW≤10s)
duty cycle≤1%
7
--6
A
Drain Current (PW≤100ms)
ID
duty cycle≤1%
10
--10
A
IDP
duty cycle≤1%
24
--20
A
Drain Current (PW≤10µs)
Allowable Power Dissipation
PD
Total Dissipation
PT
Mounted on a ceramic board
(1500mm2✕0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1500mm2✕0.8mm), PW≤10s
1.8
W
2.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking : W377
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2107PA TI IM TC-00001038 No. A0977-1/6
FW377
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS(off)
⏐yfs⏐
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
RDS(on)1
RDS(on)2
ID=6A, VGS=10V
ID=3A, VGS=4V
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
35
V
1.2
4.6
1
µA
±10
µA
2.6
7.8
V
S
25
33
mΩ
43
61
mΩ
1050
pF
150
pF
Reverse Transfer Capacitance
Crss
100
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
13
ns
See specified Test Circuit.
43
ns
td(off)
tf
See specified Test Circuit.
76
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
48
ns
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=10V, ID=6A
20
nC
3.3
nC
VDS=20V, VGS=10V, ID=6A
IS=6A, VGS=0V
4.5
0.84
nC
1.2
V
--1
µA
±10
µA
--2.6
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
ID=--1mA, VGS=0V
VDS=--35V, VGS=0V
VGS(off)
⏐yfs⏐
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--5A
RDS(on)1
RDS(on)2
ID=--5A, VGS=--10V
ID=--3A, VGS=--4V
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
--35
V
--1.2
4.5
7.5
S
37
49
mΩ
62
87
mΩ
1200
pF
190
pF
VDS=--20V, f=1MHz
See specified Test Circuit.
140
pF
13
ns
See specified Test Circuit.
47
ns
See specified Test Circuit.
101
ns
See specified Test Circuit.
69
ns
24
nC
3.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--20V, VGS=--10V, ID=--5A
VDS=--20V, VGS=--10V, ID=--5A
VDS=--20V, VGS=--10V, ID=--5A
Diode Forward Voltage
VSD
IS=--5A, VGS=0V
Package Dimensions
5.4
--0.85
nC
--1.5
V
Electrical Connection
unit : mm (typ)
7005-003
8
7
6
5
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
4
1.27
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Top view
0.1
5.0
1.5
1.8 MAX
0.43
0.595
6.0
4.4
0.3
8
SANYO : SOP8
No. A0977-2/6
FW377
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=20V
VIN
10V
0V
VDD= --20V
VIN
0V
--10V
ID=6A
RL=3.3Ω
VIN
D
ID= --5A
RL=4Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
G
G
FW377
P.G
50Ω
ID -- VDS
9
2.0
1.5
7
6
5
4
3
2
1.0
VGS=2.5V
1
0
0
0.5
0.6
0.7
0.8
0.9
70
ID=3A
6A
50
40
30
20
10
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
C
5°
2
1.0
7
5
3
[Nch]
40
6A
, I D=
=10V
VGS
30
20
10
--40
--20
0
20
40
60
80
100
120
IS -- VSD
140
160
IT13054
[Nch]
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.1
0.01
4.0
IT13052
3A
I =
4V, D
=
VGS
50
10
7
5
C
5°
--2
°C
75
3.5
RDS(on) -- Ta
[Nch]
Source Current, IS -- A
=
Ta
3.0
Ambient Temperature, Ta -- °C
5
2
2.5
60
0
--60
16
VDS=10V
3
2.0
70
IT13053
⏐yfs⏐ -- ID
10
1.5
80
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
[Nch]
80
1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
60
0.5
IT13051
RDS(on) -- VGS
90
0
1.0
--25°C
0.4
25°C
0.3
°C
0.2
Ta=7
5
0.1
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, ⏐yfs⏐ -- S
--25
0.5
25°C
2.5
8
°C
3V
3.0
0
[Nch]
Ta=
75°C
3.5
7
ID -- VGS
10
Drain Current, ID -- A
4.0
S
VDS=10V
11
10 V
4.5
50Ω
12
6V
5.0
[Nch]
3.5
V
5.5
4V
16V
6.0
Drain Current, ID -- A
FW377
P.G
S
2
3
5 7
0.1
2
3
5 7
1.0
Drain Current, ID -- A
2
3
5 7
10
IT13055
0.01
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT13056
No. A0977-3/6
FW377
SW Time -- ID
5
[Nch]
2
2
Ciss
100
td(off)
7
5
tr
3
2
tf
td(on)
1000
5
3
2
Coss
Crss
7
5
3
5
7
2
1.0
3
5
VGS -- Qg
10
7
0
10
IT13057
10
7
5
Drain Current, ID -- A
7
6
5
4
3
--3.5
ID -- VDS
[Pch]
s
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
--3V
5 7
IT13060
ID -- VGS
--10
.5
V
10
op
era
0.1
7
5
[Pch]
VDS= --10V
--9
--8
Drain Current, ID -- A
--4.0
[Nch]
PW≤10µs
10
0
1m µs
s
10
m
s
10
0m
s
DC
0.01
0.01
25
IT13059
--3
--4.5
20
Total Gate Charge, Qg -- nC
--4V
--10V
--6V
--16V
--5.0
15
35
ASO
ID=6A
3
2
3
2
30
IT13058
1.0
7
5
1
10
25
3
2
2
0
20
IDP=24A
3
2
5
15
5
8
0
10
Drain-to-Source Voltage, VDS -- V
[Nch]
VDS=20V
ID=6A
9
5
--3.0
--2.5
--2.0
V
V GS= --2.5
--1.5
--7
--6
--5
--4
--3
--1.0
--2
--0.5
--1
0
Ta=7
5°C
-25°C
25 °
C
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
100
10
7
5
0.1
Drain Current, ID -- A
[Nch]
f=1MHz
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
3
Ciss, Coss, Crss -- VDS
3
VDD=20V
VGS=10V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
140
--0.9
0
--1.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
IT13061
[Pch]
RDS(on) -- Ta
120
--4.0
IT13062
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
120
100
ID= --3A --5A
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
Gate-to-Source Voltage, VGS -- V
--14
--16
IT13063
100
3A
80
= -, ID
--4V
60
=
VGS
40
= --10
VGS
= --5A
V, I D
20
0
--60
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13064
No. A0977-4/6
FW377
[Pch]
5
C
5°
2
1.0
7
5
3
3
2
--0.1
7
5
3
2
2
3
5 7
2
--0.1
3
5 7
2
--1.0
3
--10
IT13065
SW Time -- ID
5
--0.01
--0.2
5 7
Drain Current, ID -- A
--0.6
--0.8
--1.0
--1.2
IT13066
Ciss, Coss, Crss -- VDS
[Pch]
3
[Pch]
f=1MHz
2
Ciss
2
7
tf
5
3
tr
2
1000
Ciss, Coss, Crss -- pF
td(off)
100
7
5
3
Coss
2
td(on)
Crss
10
100
7
7
5
--0.1
5
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
VGS -- Qg
--10
0
7
--10
IT13067
Drain Current, ID -- A
--6
--5
--4
--3
--2
0
15
20
Total Gate Charge, Qg -- nC
PD -- Ta
--10
7
5
2.4
[Nch, Pch]
2.2
2.0
1.8
To
t
1.6
al
1.4
1.2
di
ss
1u
ati
on
nit
1.0
ip
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13071
--30
--35
IT13068
PW≤10µs
10
10
0µ
s
1m
s
m
10
3
2
s
0m
s
--1.0
7
5
DC 10s
op
er
ati
o
3
2
n
Operation in this
area is limited by RDS(on).
--0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
2 3
5 7
IT13070
Drain-to-Source Voltage, VDS -- V
PD(FET1) -- PD(FET2) [Nch, Pch]
IT13069
Mounted on a ceramic board (1500mm2✕0.8mm)
PW≤10s
--25
[Pch]
ID= --5A
--0.01
--0.01 2 3
Allowable Power Dissipation, PD (FET1) -- W
2.6
25
--20
IDP= --20A
3
2
--1
10
--15
ASO
5
3
2
--7
5
--10
[Pch]
--8
0
--5
Drain-to-Source Voltage, VDS -- V
VDS= --20V
ID= --5A
--9
Allowable Power Dissipation, PD -- W
--0.4
Diode Forward Voltage, VSD -- V
VDD= --20V
VGS= --10V
3
Switching Time, SW Time -- ns
--1.0
7
5
2
0.1
--0.01
Gate-to-Source Voltage, VGS -- V
3
2
25°C
--25°C
C
5°
--2
=
Ta
°C
75
2
[Pch]
VGS=0V
°C
3
IS -- VSD
--10
7
5
Ta=7
5
7
⏐yfs⏐ -- ID
VDS= --10V
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
10
2.0
Mounted on a ceramic board (1500mm2✕0.8mm)
PW≤10s
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Allowable Power Dissipation, PD (FET2) -- W
1.8
2.0
IT13072
No. A0977-5/6
FW377
Note on usage : Since the FW377 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0977-6/6