VEC2606 Ordering number : ENA0856 SANYO Semiconductors DATA SHEET VEC2606 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • • Best suited for inverter applications. Low ON-resistance. The VEC2606 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 60 --60 V Gate-to-Source Voltage VGSS ±20 ±20 V 2 --1.5 A 8 --6 Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation ID IDP PD Channel Temperature PT Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 Mounted on a ceramic board (900mm2✕0.8mm) A W 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : BX V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 60 V 1.2 1.44 1 µA ±10 µA 2.6 V 2.4 S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60607PE TI IM TC-00000746 No. A0856-1/6 VEC2606 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=1A, VGS=10V 80 104 mΩ ID=1A, VGS=4V 108 151 mΩ Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 490 Output Capacitance 60 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.8 ns Rise Time tr td(off) See specified Test Circuit. 10 ns See specified Test Circuit. 44 ns tf Qg See specified Test Circuit. 26 ns VDS=30V, VGS=10V, ID=2A 10 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=10V, ID=2A VDS=30V, VGS=10V, ID=2A 1.2 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=2A, VGS=0V 0.8 Turn-OFF Delay Time Fall Time Total Gate Charge Conditions min typ Unit max 2.3 nC 1.2 V --1 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--60V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--0.75A 1.5 Cutoff Voltage Forward Transfer Admittance --60 V ±10 µA --2.6 V 2.5 S 185 240 mΩ RDS(on)2 Ciss ID=--0.75A, VGS=--10V ID=--0.75A, VGS=--4V 240 336 mΩ VDS=--20V, f=1MHz 550 pF Output Capacitance Coss VDS=--20V, f=1MHz 50 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 30 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.4 ns Rise Time tr td(off) See specified Test Circuit. 7.4 ns See specified Test Circuit. 59 ns tf Qg See specified Test Circuit. 27 ns VDS=--30V, VGS=--10V, ID=--1.5A 10 nC Gate-to-Source Charge Qgs nC Qgd VDS=--30V, VGS=--10V, ID=--1.5A VDS=--30V, VGS=--10V, ID=--1.5A 1.2 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.5A, VGS=0V Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 2.5 --0.8 nC --1.2 V Electrical Connection unit : mm (typ) 7012-002 0.3 8 7 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 6 5 2.3 2 3 4 0.65 1 2.9 0.75 1 0.07 0.25 2.8 0.25 8 2 3 4 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 No. A0856-2/6 VEC2606 Switching Time Test Circuit [N-channel] [P-channel] VDD=30V VIN VDD= --30V VIN 0V --10V 10V 0V ID=1A RL=30Ω VOUT VIN D PW=10µs D.C.≤1% ID= --0.75A RL=40Ω VOUT VIN D PW=10µs D.C.≤1% G G VEC2606 50Ω ID -- VDS --4 .0 --3 --8 . 0V --6 . --1.5 [Pch] .0V V V 0V --5 .0 V 3.0 --1.0 0V VGS=2.5V 0 VGS= --2.5V --0.5 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 --0.2 ID -- VGS --0.4 --0.6 --0.8 Drain-to-Source Voltage, VDS -- V IT12543 ID -- VGS [Nch] --3 [Pch] VDS= --10V VDS=10V 25° C --1 25 °C 1 --25° C Ta=7 5°C 2 --2 Ta=7 5°C Drain Current, ID -- A 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 500 3.5 --0.2 0 0 --0.5 --1.0 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 ID=0.5A 300 1.0A 250 200 150 100 50 0 --2.0 --2.5 --3.0 RDS(on) -- VGS [Nch] 450 --1.5 Gate-to-Source Voltage, VGS -- V IT12545 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 IT12544 --25°C 0 Drain Current, ID -- A ID -- VDS --2.0 0.5 4 S --1 0. 1.0 VEC2606 50Ω [Nch] 10.0V 1.5 4.0V 8.0V 6.0 5 V .0V 2.0 Drain Current, ID -- A P.G S Drain Current, ID -- A P.G --3.5 IT12546 [Pch] Ta=25°C 450 400 ID= --0.4A 350 --0.75A 300 250 200 150 100 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT12547 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 IT12548 No. A0856-3/6 VEC2606 RDS(on) -- Ta =1A , ID V =4 =1A V GS , ID V 0 =1 V GS 150 100 50 --40 --20 0 20 40 60 80 100 120 140 IT12549 yfs -- ID [Nch] 10 7 5 3 2 °C 25 1.0 C 5° --2 °C = 75 Ta 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 250 200 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12550 yfs -- ID [Pch] VDS= --10V 3 25 2 °C C 5° -2 =- 1.0 75 Ta 7 °C 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A [Nch] 3 5 7 IT12552 IS -- VSD 5 VGS=0V [Pch] VGS=0V 3 2 0.1 7 5 3 2 --0.1 7 5 --25°C 2 3 25°C 3 --1.0 7 5 5°C 1.0 7 5 Ta= 7 Source Current, IS -- A 2 Ta=7 5°C 25°C --25° C Source Current, IS -- A 300 5 3 3 2 2 0.01 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 7 [Nch] 2 td(on) 10 7 tr 5 3 2 1.0 0.1 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 IT12554 SW Time -- ID 2 Switching Time, SW Time -- ns tf 3 --0.4 Diode Forward Voltage, VSD -- V IT12553 VDD=30V VGS=10V td(off) 5 --0.01 --0.3 1.2 SW Time -- ID 100 Switching Time, SW Time -- ns A 75 -0. =75A , ID -0. =-4V = , ID S 0V VG --1 = V GS 350 7 5 7 10 IT12551 IS -- VSD 10 7 5 400 10 VDS=10V [Pch] 450 0 --60 160 Ambient Temperature, Ta -- °C RDS(on) -- Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 0 --60 Forward Transfer Admittance, yfs -- S [Nch] Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 [Pch] VDD= --30V VGS= --10V 100 td(off) 7 5 tf 3 2 td(on) 10 7 tr 5 3 2 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT12555 1.0 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT12556 No. A0856-4/6 VEC2606 Ciss, Coss, Crss -- VDS 2 [Nch] Ciss, Coss, Crss -- VDS 2 [Pch] f=1MHz f=1MHz 1000 1000 7 Ciss 5 3 2 100 7 Coss Crss 3 2 100 7 5 Coss 3 3 Crss 2 2 5 10 10 0 10 20 30 40 50 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 1 --40 --50 --60 IT12558 [Pch] VDS= --30V ID= --1.5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC IT12559 ASO [Nch] 2 IDP=8A 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT12561 Drain-to-Source Voltage, VDS -- V PD -- Ta [Nch, Pch] 1.2 --1.0 7 5 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit ID= --1.5A ) °C 25 °C ) Operation in this area is limited by RDS(on). [Pch] PW≤10µs 25 Ta = ASO IDP= --6A a= (T n( 10 s io 9 IT12560 on at 8 ati er 7 0m s 6 er op 3 2 3 2 s 0m 5 op C 4 DC 10 D 3 s 0µ 10 s ms 1m 10 3 s m 2 10 10 1.0 7 5 0.1 7 5 --10 7 5 s 0µ ID=2A 1 Total Gate Charge, Qg -- nC PW≤10µs 1m 3 2 0 10 10 7 5 10 Drain Current, ID -- A 0 Drain Current, ID -- A --30 VGS -- Qg --10 --9 8 --20 Drain-to-Source Voltage, VDS -- V [Nch] VDS=30V ID=2A 9 --10 IT12557 VGS -- Qg 10 0 60 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Ciss 5 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 7 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT12562 1.0 M 0.9 ou nte 0.8 do na ce ram 0.6 ic bo ard (9 00 0.4 mm 2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12563 No. A0856-5/6 VEC2606 Note on usage : Since the VEC2606 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0856-6/6