MCH6663 Ordering number : EN8758 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6663 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS(on)1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) P-channel Unit 30 --30 V ±20 ±20 V 1.8 --1.5 A 7.2 --6 A Allowable Power Dissipation ID IDP PD 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Product & Package Information unit : mm (typ) 7022A-006 • Package : MCPH6 • JEITA, JEDEC : SC-88, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 Packing Type : TL 4 3 TL 0.3 0.85 0.25 2 0.65 XQ LOT No. 1 LOT No. 0.07 Marking 0 t o 0.02 2.1 1.6 0.25 Package Dimensions Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 6 5 4 1 2 3 http://semicon.sanyo.com/en/network D0711PE TKIM TC-00002677 No.8758-1/6 MCH6663 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=0.9A 1.1 RDS(on)1 ID=0.9A, VGS=10V 145 188 mΩ RDS(on)2 ID=0.5A, VGS=4.5V 245 343 mΩ RDS(on)3 ID=0.5A, VGS=4V 270 378 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 30 V 1.2 1 μA ±10 μA 2.6 V S 88 pF 19 pF Crss 11 pF td(on) tr 3.4 ns 3.6 ns 10.5 ns VDS=10V, f=1MHz See specified Test Circuit. Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=1.8A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=15V, VGS=10V, ID=1.8A 4.0 ns 2.0 nC 0.33 nC 0.29 0.86 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance VGS(off) | yfs | V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 --2.6 V VDS=--10V, ID=--0.8A 1.3 ID=--0.8A, VGS=--10V ID=--0.4A, VGS=--4.5V 250 325 mΩ RDS(on)2 397 555 mΩ RDS(on)3 ID=--0.4A, VGS=--4V 458 641 mΩ RDS(on)1 Static Drain-to-Source On-State Resistance --30 VDS=--30V, VGS=0V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance S 82 pF 22 pF Crss 16 pF Turn-ON Delay Time td(on) 4.0 ns Rise Time tr 3.3 ns Turn-OFF Delay Time 12 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--1.5A 5.4 ns 2.2 nC 0.36 nC 0.49 IS=--1.5A, VGS=0V --0.9 nC --1.5 V No.8758-2/6 MCH6663 Switching Time Test Circuit [N-channel] VDD=15V VIN 0V --10V ID=0.9A RL=16.7Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN VOUT D PW=10μs D.C.≤1% G 50Ω ID -- VDS [Nch] 4.5 V 4.0 V 6.0V 0.4 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) -- VGS 600 0.9 0.9A 400 350 300 250 200 150 100 50 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT16667 1.0 1.5 2.0 2.5 3.0 3.5 RDS(on) -- Ta 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=0.5A 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 450 0 IT16666 500 0 0 1.0 [Nch] 550 Ta= 7 0.2 VGS=2.5V Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 0.4 3.0V 0.2 0 1.2 C 3.5V 1.4 25° C 0.6 VDS=10V 5°C Drain Current, ID -- A 0.8 [Nch] 1.6 8.0V 1.0 S ID -- VGS 1.8 10.0V 1.2 50Ω 2.0 Ta=25°C 15.0V Drain Current, ID -- A 1.4 MCH6663 P.G S 1.8 1.6 VOUT G MCH6663 P.G ID= --0.8A RL=18.75Ω VIN --25 ° 10V 0V [P-channel] 4.0 IT13108 [Nch] 550 500 450 400 350 A =0.5 V, I D 0 . 4 = VGS 0.5A , I D= 4.5V = V GS =0.9A 0.0V, I D V GS=1 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16668 No.8758-3/6 MCH6663 | yfs | -- ID [Nch] VDS=10V 2 [Nch] VGS=0V 1.0 7 5 3 °C -25 =- 2 Ta 75 5°C 0.1 7 5 °C 2 3 2 3 2 0.1 7 5 Ta= --25 °C 25°C 75°C 1.0 7 5 3 2 0.01 7 5 3 2 0.01 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 SW Time -- ID 5 0.001 0.2 5 7 1.0 IT13111 Drain Current, ID -- A Ciss, Coss, Crss -- pF td(off) 10 7 tf td(on) tr 0.8 1.0 1.2 IT13112 [Nch] f=1MHz 2 2 3 0.6 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=10V 5 0.4 Diode Forward Voltage, VSD -- V [Nch] 3 Switching Time, SW Time -- ns IS -- VSD 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 2 Ciss 100 7 5 3 2 Coss Crss 10 7 1.0 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A Drain Current, ID -- A 0.8 1.0 1.2 1.4 1.6 1.8 3 2 Total Gate Charge, Qg -- nC [Pch] 5 7 0.1 2 3 5 7 1.0 2 3 5 10 ID -- VGS --2.0 Ta=25°C .0V 5V --4 . 2 3 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16670 [Pch] VDS= --10V --1.8 --4 0V --6 . V --8. 0 --1.4 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit IT16669 ID -- VDS --1.6 Operation in this area is limited by RDS(on). 0.1 7 5 0.01 0.01 2.0 s 1.0 7 5 on 0.6 s s 0.4 0μ ati 0.2 ID=1.8A er 0 10 1m 3 2 3 2 1 IDP=7.2A (PW≤10μs) s 2 [Nch] m 3 ASO 10 7 5 30 IT13114 op 4 25 0m 5 20 10 6 15 10 7 10 DC Gate-to-Source Voltage, VGS -- V [Nch] 8 0 5 Drain-to-Source Voltage, VDS -- V VDS=15V ID=1.8A 9 0 IT13113 VGS -- Qg 10 5 5 3.5V -- --0.8 --0.6 --3.0V --0.4 --1.4 --1.2 --1.0 --0.8 --0.6 Ta =7 5°C 25 °C --25 °C --1.0 Drain Current, ID -- A .0V --10 Drain Current, ID -- A --1.6 --1.2 --0.4 --0.2 0 --0.2 VGS= --2.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16626 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT16627 No.8758-4/6 MCH6663 900 ID= --0.4A 700 --0.8A 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 3 2 = Ta 7 C 5° --2 C 75° 5 °C 25 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 5 2 td(off) 10 7 tf td(on) 3 .4A = --0 V, I D 5 . 4 =VGS --0.8A V, I D= .0 0 1 -V GS= 300 200 100 --40 --20 0 20 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 Ciss 5 3 10 Coss Crss 0 --5 --10 --15 --20 ASO s Drain Current, ID -- A s on IT16673 0μ 2 ati 3.0 m 3 er Total Gate Charge, Qg -- nC 2.5 10 --1.0 7 5 op 2.0 ID= --1.5A s 0m 1.5 s 1.0 [Pch] IDP= --6A (PW≤10μs) DC 0.5 --30 IT16633 10 --10 7 5 10 0 --25 Drain-to-Source Voltage, VDS -- V --0.1 7 5 3 2 --1 [Pch] 7 1m --2 --1.2 IT16631 f=1MHz 100 2 --3 --1.0 Ciss, Coss, Crss -- VDS 3 --4 [Pch] 2 --8 --5 160 IT16672 3 [Pch] --6 140 5 5 7 --10 --7 120 7 VDS= --15V ID= --1.5A --9 100 --1.0 7 5 3 2 IT16632 VGS -- Qg --10 80 VGS=0V 2 3 60 IS -- VSD 1000 tr 2 40 Diode Forward Voltage, VSD -- V 2 0 = VGS 400 --0.001 [Pch] VDD= --15V VGS= --10V 3 1.0 --0.01 Gate-to-Source Voltage, VGS -- V 5 7 --10 IT16630 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 5 500 --0.01 7 5 3 2 2 0.1 --0.01 .4A = --0 V, I D --4.0 --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 5 1.0 600 Ambient Temperature, Ta -- °C VDS= --10V 7 700 IT16671 | yfs | -- ID 10 800 0 --60 --16 [Pch] 900 Ta=7 5°C 800 RDS(on) -- Ta 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Pch] Ta=25°C 25°C --25°C RDS(on) -- VGS 1000 Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16674 No.8758-5/6 MCH6663 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16675 Note on usage : Since the MCH6663 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2011. Specifications and information herein are subject to change without notice. PS No.8758-6/6