SANYO EMH2603

EMH2603
Ordering number : ENA0657
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
EMH2603
General-Purpose Switching Device
Applications
Features
•
•
•
The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
Nch: 2.5V drive.
Pch: 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--20
V
Gate-to-Source Voltage
VGSS
±10
±10
V
Drain Current (DC)
0.15
--2
A
PW≤10µs, duty cycle≤1%
0.6
--8
A
Allowable Power Dissipation
ID
IDP
PD
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.6
Total Dissipation
PT
Mounted on a ceramic board (900mm2✕0.8mm)
Drain Current (Pulse)
1.1
W
1.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : FC
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=80mA
0.13
V
1
µA
±10
µA
1.3
0.22
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000506 No. A0657-1/7
EMH2603
Continued from preceding page.
Ratings
Parameter
Symbol
RDS(on)1
RDS(on)2
ID=80mA, VGS=4V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
ID=40mA, VGS=2.5V
3.7
5.2
Ω
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
RDS(on)3
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
td(off)
See specified Test Circuit.
65
ns
See specified Test Circuit.
155
ns
tf
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
Fall Time
Conditions
min
typ
Unit
max
Ω
Total Gate Charge
Qg
nC
Qgs
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
1.58
Gate-to-Source Charge
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
V(BR)DSS
nC
1.2
V
--1
µA
±10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
yfs
RDS(on)1
VDS=--10V, ID=--1A
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
--20
--0.4
1.9
ID=--1A, VGS=--4V
ID=--0.5A, VGS=--2.5V
Input Capacitance
Ciss
ID=--0.3A, VGS=--1.8V
VDS=--10V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
V
--1.4
3.2
V
S
115
150
mΩ
165
235
mΩ
260
520
mΩ
420
pF
VDS=--10V, f=1MHz
73
pF
Crss
VDS=--10V, f=1MHz
60
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11.8
ns
Rise Time
tr
td(off)
See specified Test Circuit.
33
ns
See specified Test Circuit.
48
ns
tf
Qg
See specified Test Circuit.
43
ns
VDS=--10V, VGS=--4V, ID=--2A
4.7
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--10V, VGS=--4V, ID=--2A
VDS=--10V, VGS=--4V, ID=--2A
0.75
Gate-to-Drain “Miller” Charge
1.6
nC
Diode Forward Voltage
VSD
IS=--2A, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
--0.83
--1.2
V
Electrical Connection
unit : mm (typ)
7045-005
8
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain1
7 : Drain1
8 : Drain1
4
0.5
0.2
1
2.1
5
1.7
8
7
0.125
0.2
0.2
0.05
0.75
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain1
7 : Drain1
8 : Drain1
1
2
3
4
Top view
SANYO : EMH8
No. A0657-2/7
EMH2603
Switching Time Test Circuit
[N-channel]
[P-channel]
0V
--4V
ID=80mA
RL=187.5Ω
VIN
D
D
VOUT
Rg
EMH2603
P.G
V
V
--1.8
--1.6
V
Drain Current, ID -- A
4.0V
6.0
0.10
ID -- VDS
--2.0
2.0
2.5
3.0
V
3.5V
0.12
[Nch]
0.08
VGS=1.5V
0.06
0.04
S
--1.4
0V
ID -- VDS
50Ω
[Pch]
8V
.
--1
--2
.
S
--4.0V
--3.0
V
--2.
5V
EMH2603
0.14
Drain Current, ID -- A
G
50Ω
0.16
VOUT
PW=10µs
D.C.≤1%
--8.0V --6.0V
G
ID= --1A
RL=10Ω
VIN
PW=10µs
D.C.≤1%
P.G
VDD= --10V
VIN
VDD=15V
VIN
4V
0V
--1.2
--1.0
--0.8
--0.6
--0.4
0.02
0
0
0.8
Drain-to-Source Voltage, VDS -- V
[Nch]
1.5
2.0
--0.9
--1.0
IT10538
[Pch]
--1.0
--0.6
2.5
3.0
IT00030
--25°C
--0.8
25°
C
25
Gate-to-Source Voltage, VGS -- V
--0.8
--1.2
0
1.0
--0.7
--1.4
--0.2
0
0.5
--0.6
ID -- VGS
--0.4
Ta
=
°C
75
°C
--2
5°C
0.10
0
--0.5
--1.6
0.15
0.05
--0.4
--1.8
25
75
°C
0.20
--0.3
VDS= --10V
°C
Ta=
0.25
--0.2
--2.0
--25
°C
VDS=10V
--0.1
Drain-to-Source Voltage, VDS -- V
IT00029
ID -- VGS
0.30
0
1.0
5°C
0.6
0.4
Ta=
7
0.2
Drain Current, ID -- A
0
Drain Current, ID -- A
VGS= --1.5V
--0.2
0
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage, VGS -- V
--2.5
IT10539
No. A0657-3/7
EMH2603
RDS(on) -- VGS
700
Ta=25°C
9
8
7
6
80mA
5
4
ID=40mA
3
RDS(on) -- VGS
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
10
2
1
[Pch]
Ta=25°C
600
--0.5A
500
--1.0A
400
300
ID= --0.3A
200
100
0
0
0
1
2
3
4
5
7
6
8
9
Gate-to-Source Voltage, VGS -- V
--2
--4
--6
--8
Gate-to-Source Voltage, VGS -- V
IT00031
RDS(on) -- ID
10
0
10
[Nch]
IT10540
RDS(on) -- Ta
500
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25°C
--25°C
2
1.0
0.01
2
3
5
7
2
0.1
3
Drain Current, ID -- A
10
--25°C
2
2
3
5
7
2
0.1
3
Drain Current, ID -- A
7
--25°C
3
25°C
120
140
160
yfs -- ID
[Pch]
C
5°
--2
=
Ta
°C
75
°C
25
5
3
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
3
5 7 --10
IT10542
IS -- VSD
--10
7
5
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
1.0
0.001
100
7
Source Current, IS -- A
Ta=75°C
7
80
VDS= --10V
1.0
5
2
60
IT10541
2
5
3
40
3
[Nch]
7
5
20
0
Ambient Temperature, Ta -- °C
5
VGS=1.5V
10
--20
IT00033
RDS(on) -- ID
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
25°C
1.0
0.01
--40
[Nch]
7
3
100
0
--60
5
VGS=2.5V
5
= --2.5V
A, V GS
.5
0
-=
ID
= --4.0V
A, V GS
.0
1
-=
ID
200
IT00032
RDS(on) -- ID
10
A
I D= --0.3
5°C
3
--1.8V
, V GS=
300
°C
Ta=75°C
--25
5
400
25°
C
7
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
VGS=4V
2
3
5
7
0.01
Drain Current, ID -- A
2
3
5
IT00034
--0.01
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Diode Forward Voltage, VSD -- V
--1.0
--1.1
IT10543
No. A0657-4/7
EMH2603
RDS(on) -- Ta
[Nch]
SW Time -- ID
5
[Pch]
VDD= --10V
VGS= --4V
3
6
5
Switching Time, SW Time -- ns
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
5V
2.
S=
G
A, V
V
=4.0
40m
I D=
, VGS
A
80m
I D=
4
3
2
1
2
100
td(off)
tf
7
5
3
2
tr
td(on)
10
7
5
0
--60
--40
--20
0
20
60
80
100
120
140
IT00035
yfs -- ID
[Nch]
7
3
5
7 --0.1
5
7 --1.0
2
3
5
IT10544
[Pch]
f=1MHz
5
Ciss, Coss, Crss -- pF
25°C
-Ta=
75°C
3
7
3
2
2
Ciss, Coss, Crss -- VDS
1000
5
25°C
0.1
7
5
3
Ciss
3
2
100
Coss
7
Crss
5
2
3
2
2
3
5
7
2
0.1
[Nch]
Gate-to-Source Voltage, VGS -- V
7
5
3
Ta
=
75
°C
25
°C
--2
5°C
2
7
5
3
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
5
tf
100
7
tr
5
3
td(on)
2
10
0.01
2
3
7
Drain Current, ID -- A
0.1
2
IT00038
--20
IT10545
[Pch]
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
5
VGS -- Qg
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Total Gate Charge, Qg -- nC
IT10546
ASO
[Pch]
2
Drain Current, ID -- A
td(off)
--15
VDS= --10V
ID= --2A
IT00037
3
2
--3.5
0
0
1.2
[Nch]
VDD=15V
VGS=4V
7
--10
--4.0
VGS=0V
0.1
--5
Drain-to-Source Voltage, VDS -- V
IT00036
IS -- VSD
1.0
0
5
3
Drain Current, ID -- A
Source Current, IS -- A
2
Drain Current, ID -- A
VDS=10V
0.01
0.01
Switching Time, SW Time -- ns
3
--0.01
160
Ambient Temperature, Ta -- °C
1.0
Forward Transfer Admittance, yfs -- S
40
IDP= --8A
PW≤10µs
1m 100
s µs
ID= --2A
10
DC
m
10
s
op
0m
er
s
ati
on
(T
a=
25
°C
Operation in this area
)
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT11989
No. A0657-5/7
EMH2603
Ciss, Coss, Crss -- VDS
100
[Nch]
Allowable Power Dissipation, PD -- W
5
Ciss, Coss, Crss -- pF
[Pch]
f=1MHz
7
3
2
10
Ciss
7
Coss
5
Crss
3
2
1.0
1.2
M
1.1
ou
nte
1.0
do
na
0.8
ce
ram
ic
bo
ard
0.6
(9
00
mm
0.4
2
✕0
.8m
m)
0.2
1u
nit
0
0
2
4
6
8
10
12
14
16
18
Drain-to-Source Voltage, VDS -- V
20
IT00039
VGS -- Qg
10
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11991
[Nch]
VDS=10V
ID=150mA
9
Gate-to-Source Voltage, VGS -- V
PD -- Ta
1.4
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00040
ASO
[Nch]
1.0
IDP=0.6A
7
PW≤10µs
s
3
s
0m
10
ID=0.15A
DC
0.1
op
7
er
Operation in this area
is limited by RDS(on).
on
5
ati
2
a=
(T
Drain Current, ID -- A
m
10
s
0µ
10 ms
1
5
2
3
C)
5°
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
2
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain-to-Source Voltage, VDS -- V
3
5
IT11988
PD -- Ta
0.8
Allowable Power Dissipation, PD -- W
1.6
Total Gate Charge, Qg -- nC
[Nch]
M
0.6
ou
nte
do
na
ce
ram
0.4
ic
bo
ard
(9
00
mm
0.2
2
✕0
.8m
m)
1u
nit
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11990
No. A0657-6/7
EMH2603
Note on usage : Since the EMH2603 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0657-7/7