EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. Nch: 2.5V drive. Pch: 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --20 V Gate-to-Source Voltage VGSS ±10 ±10 V Drain Current (DC) 0.15 --2 A PW≤10µs, duty cycle≤1% 0.6 --8 A Allowable Power Dissipation ID IDP PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 Total Dissipation PT Mounted on a ceramic board (900mm2✕0.8mm) Drain Current (Pulse) 1.1 W 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : FC V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=80mA 0.13 V 1 µA ±10 µA 1.3 0.22 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107PE TI IM TC-00000506 No. A0657-1/7 EMH2603 Continued from preceding page. Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID=80mA, VGS=4V 2.9 3.7 Ω Static Drain-to-Source On-State Resistance ID=40mA, VGS=2.5V 3.7 5.2 Ω ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance RDS(on)3 Ciss VDS=10V, f=1MHz 7.0 pF Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max Ω Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 1.58 Gate-to-Source Charge 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 V(BR)DSS nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--1A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --20 --0.4 1.9 ID=--1A, VGS=--4V ID=--0.5A, VGS=--2.5V Input Capacitance Ciss ID=--0.3A, VGS=--1.8V VDS=--10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance V --1.4 3.2 V S 115 150 mΩ 165 235 mΩ 260 520 mΩ 420 pF VDS=--10V, f=1MHz 73 pF Crss VDS=--10V, f=1MHz 60 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11.8 ns Rise Time tr td(off) See specified Test Circuit. 33 ns See specified Test Circuit. 48 ns tf Qg See specified Test Circuit. 43 ns VDS=--10V, VGS=--4V, ID=--2A 4.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4V, ID=--2A VDS=--10V, VGS=--4V, ID=--2A 0.75 Gate-to-Drain “Miller” Charge 1.6 nC Diode Forward Voltage VSD IS=--2A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions --0.83 --1.2 V Electrical Connection unit : mm (typ) 7045-005 8 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1 4 0.5 0.2 1 2.1 5 1.7 8 7 0.125 0.2 0.2 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1 1 2 3 4 Top view SANYO : EMH8 No. A0657-2/7 EMH2603 Switching Time Test Circuit [N-channel] [P-channel] 0V --4V ID=80mA RL=187.5Ω VIN D D VOUT Rg EMH2603 P.G V V --1.8 --1.6 V Drain Current, ID -- A 4.0V 6.0 0.10 ID -- VDS --2.0 2.0 2.5 3.0 V 3.5V 0.12 [Nch] 0.08 VGS=1.5V 0.06 0.04 S --1.4 0V ID -- VDS 50Ω [Pch] 8V . --1 --2 . S --4.0V --3.0 V --2. 5V EMH2603 0.14 Drain Current, ID -- A G 50Ω 0.16 VOUT PW=10µs D.C.≤1% --8.0V --6.0V G ID= --1A RL=10Ω VIN PW=10µs D.C.≤1% P.G VDD= --10V VIN VDD=15V VIN 4V 0V --1.2 --1.0 --0.8 --0.6 --0.4 0.02 0 0 0.8 Drain-to-Source Voltage, VDS -- V [Nch] 1.5 2.0 --0.9 --1.0 IT10538 [Pch] --1.0 --0.6 2.5 3.0 IT00030 --25°C --0.8 25° C 25 Gate-to-Source Voltage, VGS -- V --0.8 --1.2 0 1.0 --0.7 --1.4 --0.2 0 0.5 --0.6 ID -- VGS --0.4 Ta = °C 75 °C --2 5°C 0.10 0 --0.5 --1.6 0.15 0.05 --0.4 --1.8 25 75 °C 0.20 --0.3 VDS= --10V °C Ta= 0.25 --0.2 --2.0 --25 °C VDS=10V --0.1 Drain-to-Source Voltage, VDS -- V IT00029 ID -- VGS 0.30 0 1.0 5°C 0.6 0.4 Ta= 7 0.2 Drain Current, ID -- A 0 Drain Current, ID -- A VGS= --1.5V --0.2 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT10539 No. A0657-3/7 EMH2603 RDS(on) -- VGS 700 Ta=25°C 9 8 7 6 80mA 5 4 ID=40mA 3 RDS(on) -- VGS [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 2 1 [Pch] Ta=25°C 600 --0.5A 500 --1.0A 400 300 ID= --0.3A 200 100 0 0 0 1 2 3 4 5 7 6 8 9 Gate-to-Source Voltage, VGS -- V --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V IT00031 RDS(on) -- ID 10 0 10 [Nch] IT10540 RDS(on) -- Ta 500 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25°C --25°C 2 1.0 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A 10 --25°C 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 7 --25°C 3 25°C 120 140 160 yfs -- ID [Pch] C 5° --2 = Ta °C 75 °C 25 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT10542 IS -- VSD --10 7 5 [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 1.0 0.001 100 7 Source Current, IS -- A Ta=75°C 7 80 VDS= --10V 1.0 5 2 60 IT10541 2 5 3 40 3 [Nch] 7 5 20 0 Ambient Temperature, Ta -- °C 5 VGS=1.5V 10 --20 IT00033 RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=75°C 25°C 1.0 0.01 --40 [Nch] 7 3 100 0 --60 5 VGS=2.5V 5 = --2.5V A, V GS .5 0 -= ID = --4.0V A, V GS .0 1 -= ID 200 IT00032 RDS(on) -- ID 10 A I D= --0.3 5°C 3 --1.8V , V GS= 300 °C Ta=75°C --25 5 400 25° C 7 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=4V 2 3 5 7 0.01 Drain Current, ID -- A 2 3 5 IT00034 --0.01 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Diode Forward Voltage, VSD -- V --1.0 --1.1 IT10543 No. A0657-4/7 EMH2603 RDS(on) -- Ta [Nch] SW Time -- ID 5 [Pch] VDD= --10V VGS= --4V 3 6 5 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5V 2. S= G A, V V =4.0 40m I D= , VGS A 80m I D= 4 3 2 1 2 100 td(off) tf 7 5 3 2 tr td(on) 10 7 5 0 --60 --40 --20 0 20 60 80 100 120 140 IT00035 yfs -- ID [Nch] 7 3 5 7 --0.1 5 7 --1.0 2 3 5 IT10544 [Pch] f=1MHz 5 Ciss, Coss, Crss -- pF 25°C -Ta= 75°C 3 7 3 2 2 Ciss, Coss, Crss -- VDS 1000 5 25°C 0.1 7 5 3 Ciss 3 2 100 Coss 7 Crss 5 2 3 2 2 3 5 7 2 0.1 [Nch] Gate-to-Source Voltage, VGS -- V 7 5 3 Ta = 75 °C 25 °C --2 5°C 2 7 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 5 tf 100 7 tr 5 3 td(on) 2 10 0.01 2 3 7 Drain Current, ID -- A 0.1 2 IT00038 --20 IT10545 [Pch] --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 5 VGS -- Qg 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Total Gate Charge, Qg -- nC IT10546 ASO [Pch] 2 Drain Current, ID -- A td(off) --15 VDS= --10V ID= --2A IT00037 3 2 --3.5 0 0 1.2 [Nch] VDD=15V VGS=4V 7 --10 --4.0 VGS=0V 0.1 --5 Drain-to-Source Voltage, VDS -- V IT00036 IS -- VSD 1.0 0 5 3 Drain Current, ID -- A Source Current, IS -- A 2 Drain Current, ID -- A VDS=10V 0.01 0.01 Switching Time, SW Time -- ns 3 --0.01 160 Ambient Temperature, Ta -- °C 1.0 Forward Transfer Admittance, yfs -- S 40 IDP= --8A PW≤10µs 1m 100 s µs ID= --2A 10 DC m 10 s op 0m er s ati on (T a= 25 °C Operation in this area ) is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11989 No. A0657-5/7 EMH2603 Ciss, Coss, Crss -- VDS 100 [Nch] Allowable Power Dissipation, PD -- W 5 Ciss, Coss, Crss -- pF [Pch] f=1MHz 7 3 2 10 Ciss 7 Coss 5 Crss 3 2 1.0 1.2 M 1.1 ou nte 1.0 do na 0.8 ce ram ic bo ard 0.6 (9 00 mm 0.4 2 ✕0 .8m m) 0.2 1u nit 0 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V 20 IT00039 VGS -- Qg 10 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11991 [Nch] VDS=10V ID=150mA 9 Gate-to-Source Voltage, VGS -- V PD -- Ta 1.4 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT00040 ASO [Nch] 1.0 IDP=0.6A 7 PW≤10µs s 3 s 0m 10 ID=0.15A DC 0.1 op 7 er Operation in this area is limited by RDS(on). on 5 ati 2 a= (T Drain Current, ID -- A m 10 s 0µ 10 ms 1 5 2 3 C) 5° Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain-to-Source Voltage, VDS -- V 3 5 IT11988 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W 1.6 Total Gate Charge, Qg -- nC [Nch] M 0.6 ou nte do na ce ram 0.4 ic bo ard (9 00 mm 0.2 2 ✕0 .8m m) 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11990 No. A0657-6/7 EMH2603 Note on usage : Since the EMH2603 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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