SANYO FW349

FW349
Ordering number : EN8750
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW349
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Motor drive application.
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
45
--45
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
5
--4.5
A
Drain Current (PW≤10s)
ID
duty cycle≤1%
6
--5
A
Drain Current (PW≤10µs)
IDP
duty cycle≤1%
20
--18
A
Allowable Power Dissipation
PD
Total Dissipation
PT
Mounted on a ceramic board
(1500mm2✕0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1500mm2✕0.8mm), PW≤10s
1.8
W
2.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking : W349
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PA TI IM TC-00000835 No.8750-1/6
FW349
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
45
V
Zero-Gate Voltage Drain Current
IDSS
VDS=45V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
1.2
yfs
RDS(on)1
VDS=10V, ID=5A
4.2
ID=5A, VGS=10V
RDS(on)2
Ciss
860
pF
105
pF
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
1
µA
±10
µA
2.6
V
28
37
mΩ
47
66
mΩ
7.1
S
Output Capacitance
Coss
ID=3A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
td(off)
See specified Test Circuit.
64
ns
See specified Test Circuit.
60
ns
tf
Qg
See specified Test Circuit.
65
ns
VDS=24V, VGS=10V, ID=5A
18.1
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=24V, VGS=10V, ID=5A
VDS=24V, VGS=10V, ID=5A
2.6
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=5A, VGS=0V
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
4.0
0.83
nC
1.2
V
--1
µA
±10
µA
--2.6
V
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
IDSS
ID=--1mA, VGS=0V
VDS=--45V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
--1.2
yfs
RDS(on)1
VDS=--10V, ID=--4.5A
4.5
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
--45
V
7.6
ID=--4.5A, VGS=--10V
ID=--3A, VGS=--4V
S
47
62
mΩ
76
106
mΩ
RDS(on)2
Ciss
VDS=--20V, f=1MHz
1275
pF
Coss
VDS=--20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
pF
td(on)
VDS=--20V, f=1MHz
See specified Test Circuit.
110
Turn-ON Delay Time
14
ns
Rise Time
tr
td(off)
See specified Test Circuit.
50
ns
See specified Test Circuit.
123
ns
tf
See specified Test Circuit.
75
ns
26
nC
2.4
nC
Input Capacitance
Output Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
VDS=--24V, VGS=--10V, ID=--4.5A
VDS=--24V, VGS=--10V, ID=--4.5A
Gate-to-Drain “Miller” Charge
Qgd
VDS=--24V, VGS=--10V, ID=--4.5A
Diode Forward Voltage
VSD
IS=--4.5A, VGS=0V
Package Dimensions
5.7
--0.86
nC
--1.2
V
Electrical Connection
unit : mm (typ)
7005-003
8
6
5
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
4
1.27
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Top view
0.1
5.0
1.5
1.8 MAX
0.43
0.595
6.0
4.4
0.3
8
7
SANYO : SOP8
No.8750-2/6
FW349
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=24V
VIN
10V
0V
VDD= --24V
VIN
0V
--10V
ID=5A
RL=4.8Ω
VIN
D
ID= --4.5A
RL=5.33Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
G
G
FW349
P.G
50Ω
ID -- VDS
5.0
[Nch]
50Ω
ID -- VGS
6
VGS=3V
Drain Current, ID -- A
1.5
3
2
1.0
1
--25
0.5
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
ID=3A
5A
50
40
30
20
10
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
5
°C
25
1.0
7
5
3
4.0
IT12875
[Nch]
50
=5A
V, I D
40
=10
VGS
30
20
10
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12877
IS -- VSD
[Nch]
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.1
0.01
3.5
3A
I D=
4V,
=
VGS
60
10
7
5
°C
-25
=
°C
Ta
75
3.0
70
[Nch]
VDS=10V
2
2.5
80
0
--60
16
3
2.0
90
IT12876
yfs -- ID
10
1.5
RDS(on) -- Ta
100
Ta=25°C
80
1.0
Gate-to-Source Voltage, VGS -- V
[Nch]
90
60
0.5
IT12874
RDS(on) -- VGS
100
0
1.0
--25°C
0.2
25°C
0.1
Ta=7
5°C
0
7
25°C
2.0
4
°C
2.5
5°C
3.0
5
Ta=
7
6V
10V
3.5
[Nch]
VDS=10V
5V
4.0
S
7
4V
16V
4.5
Drain Current, ID -- A
FW349
P.G
S
2
3
5 7
0.1
2
3
5 7
1.0
Drain Current, ID -- A
2
3
5 7
10
IT12878
0.01
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT12879
No.8750-3/6
FW349
SW Time -- ID
3
[Nch]
VDD=24V
VGS=10V
td(off)
7
5
tr
3
2
td(on)
7
5
3
2
7
5
7
0.1
3
5
7
2
1.0
3
5
VGS -- Qg
10
7
0
10
IT12880
[Nch]
10
7
5
Drain Current, ID -- A
8
6
5
4
3
3
2
10
IT12882
ID -- VDS
[Pch]
ASO
[Nch]
≤10µs
10
1m 0µs
s
10
m
0m
s
s
DC
10
s
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
5 7
IT12883
ID -- VGS
[Pch]
--5
VGS= --3V
Drain Current, ID -- A
--16V
--2.5
--2.0
45
VDS= --10V
--4V
--5V
--3.0
40
IT12881
--6
--10V --6
V
--3.5
35
10
0.01
0.01
20
Total Gate Charge, Qg -- nC
--4.5
--4.0
15
30
ID=5A
3
2
1
0
25
1.0
7
5
2
5
20
3
2
0.1
7
5
0
15
IDP=20A
3
2
7
10
Drain-to-Source Voltage, VDS -- V
5
VDS=24V
ID=5A
9
5
--1.5
--4
--3
--2
--1.0
-25°C
3
Ta=7
5°C
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Coss
Crss
100
10
Drain Current, ID -- A
Ciss
1000
tf
100
[Nch]
f=1MHz
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- VDS
3
--1
0
25°
C
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
160
--0.9
0
--1.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
IT12884
[Pch]
RDS(on) -- Ta
160
--4.0
IT12885
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
140
120
ID= --3A
100
--4.5A
80
60
40
20
0
0
--2
--4
--6
--8
--10
--12
Gate-to-Source Voltage, VGS -- V
--14
--16
IT12886
140
120
A
3.0
100
=
V GS
80
60
=
VGS
= -, ID
--4V
.5A
= --4
V, I D
--10
40
20
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT12887
No.8750-4/6
FW349
10
5
3
-2
=-
Ta
2
°C
75
1.0
7
5
3
2
--0.1
7
5
3
2
2
--0.01
--0.01
2
3
5 7
2
--0.1
3
5 7
2
--1.0
3
5 7
SW Time -- ID
5
0
--10
IT12888
Drain Current, ID -- A
--0.4
--0.6
--0.8
--1.0
--1.2
5
--1.4
IT12889
Ciss, Coss, Crss -- VDS
[Pch]
[Pch]
f=1MHz
3
2
2
Ciss
Ciss, Coss, Crss -- pF
td(off)
100
tf
7
5
tr
3
2
td(on)
1000
7
5
3
2
Coss
100
Crss
7
10
5
7
5
--0.1
3
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
VGS -- Qg
--10
0
7
--10
IT12890
--6
--5
--4
--3
--2
0
20
25
Total Gate Charge, Qg -- nC
PD -- Ta
30
[Nch, Pch]
2.2
2.0
1.8
1.6
To
t
al
1.4
1.2
di
1u
nit
1.0
ss
ip
ati
on
0.8
0.6
0.4
0.2
0
0
20
40
60
80
--35
--40
--45
IT12891
[Pch]
100
120
Ambient Temperature, Ta -- °C
140
160
IT12894
≤10µs
10
0µ
s
s 1
ms
10
m
10
3
2
0m
s
--1.0
7
5
DC
10
s
op
er
3
2
Operation in this
area is limited by RDS(on).
--0.1
7
5
ati
on
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
5 7 --0.1 2 3
5 7--1.0 2 3
5 7 --10
2 3
5 7--100
IT12893
Drain-to-Source Voltage, VDS -- V
PD(FET 1) -- PD(FET 2) [Nch, Pch]
IT12892
Mounted on a ceramic board (1500mm2✕0.8mm)
PW≤10s
2.4
--30
ID= --4.5A
--0.01
--0.01 2 3
Allowable Power Dissipation, PD (FET 1) -- W
2.6
--25
IDP= --18A
--10
7
5
3
2
--1
15
--20
ASO
Drain Current, ID -- A
--7
10
--15
5
3
2
5
--10
[Pch]
--8
0
--5
Drain-to-Source Voltage, VDS -- V
VDS= --24V
ID= --4.5A
--9
Gate-to-Source Voltage, VGS -- V
--0.2
Diode Forward Voltage, VSD -- V
VDD= --24V
VGS= --10V
3
Switching Time, SW Time -- ns
--1.0
7
5
3
0.1
Allowable Power Dissipation, PD -- W
[Pch]
VGS=0V
3
2
7
°C
25
5°C
IS -- VSD
--10
7
5
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
[Pch]
VDS= --10V
Ta=7
5°C
25°C
--25°C
yfs -- ID
2
2.0
Mounted on a ceramic board (1500mm2✕0.8mm)
PW≤10s
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Allowable Power Dissipation, PD (FET 2) -- W
2.0
IT12895
No.8750-5/6
FW349
Note on usage : Since the FW349 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No.8750-6/6