FW349 Ordering number : EN8750 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW349 General-Purpose Switching Device Applications Features • • • • • Motor drive application. Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 45 --45 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 5 --4.5 A Drain Current (PW≤10s) ID duty cycle≤1% 6 --5 A Drain Current (PW≤10µs) IDP duty cycle≤1% 20 --18 A Allowable Power Dissipation PD Total Dissipation PT Mounted on a ceramic board (1500mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 1.8 W 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Marking : W349 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82907PA TI IM TC-00000835 No.8750-1/6 FW349 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 45 V Zero-Gate Voltage Drain Current IDSS VDS=45V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=5A 4.2 ID=5A, VGS=10V RDS(on)2 Ciss 860 pF 105 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 1 µA ±10 µA 2.6 V 28 37 mΩ 47 66 mΩ 7.1 S Output Capacitance Coss ID=3A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 64 ns See specified Test Circuit. 60 ns tf Qg See specified Test Circuit. 65 ns VDS=24V, VGS=10V, ID=5A 18.1 nC Gate-to-Source Charge Qgs nC Qgd VDS=24V, VGS=10V, ID=5A VDS=24V, VGS=10V, ID=5A 2.6 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=5A, VGS=0V Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge 4.0 0.83 nC 1.2 V --1 µA ±10 µA --2.6 V [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--45V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--4.5A 4.5 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS --45 V 7.6 ID=--4.5A, VGS=--10V ID=--3A, VGS=--4V S 47 62 mΩ 76 106 mΩ RDS(on)2 Ciss VDS=--20V, f=1MHz 1275 pF Coss VDS=--20V, f=1MHz 150 pF Reverse Transfer Capacitance Crss pF td(on) VDS=--20V, f=1MHz See specified Test Circuit. 110 Turn-ON Delay Time 14 ns Rise Time tr td(off) See specified Test Circuit. 50 ns See specified Test Circuit. 123 ns tf See specified Test Circuit. 75 ns 26 nC 2.4 nC Input Capacitance Output Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--24V, VGS=--10V, ID=--4.5A VDS=--24V, VGS=--10V, ID=--4.5A Gate-to-Drain “Miller” Charge Qgd VDS=--24V, VGS=--10V, ID=--4.5A Diode Forward Voltage VSD IS=--4.5A, VGS=0V Package Dimensions 5.7 --0.86 nC --1.2 V Electrical Connection unit : mm (typ) 7005-003 8 6 5 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 4 1.27 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.1 5.0 1.5 1.8 MAX 0.43 0.595 6.0 4.4 0.3 8 7 SANYO : SOP8 No.8750-2/6 FW349 Switching Time Test Circuit [N-channel] [P-channel] VDD=24V VIN 10V 0V VDD= --24V VIN 0V --10V ID=5A RL=4.8Ω VIN D ID= --4.5A RL=5.33Ω VIN D VOUT PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW349 P.G 50Ω ID -- VDS 5.0 [Nch] 50Ω ID -- VGS 6 VGS=3V Drain Current, ID -- A 1.5 3 2 1.0 1 --25 0.5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 ID=3A 5A 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 °C 25 1.0 7 5 3 4.0 IT12875 [Nch] 50 =5A V, I D 40 =10 VGS 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12877 IS -- VSD [Nch] VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 3.5 3A I D= 4V, = VGS 60 10 7 5 °C -25 = °C Ta 75 3.0 70 [Nch] VDS=10V 2 2.5 80 0 --60 16 3 2.0 90 IT12876 yfs -- ID 10 1.5 RDS(on) -- Ta 100 Ta=25°C 80 1.0 Gate-to-Source Voltage, VGS -- V [Nch] 90 60 0.5 IT12874 RDS(on) -- VGS 100 0 1.0 --25°C 0.2 25°C 0.1 Ta=7 5°C 0 7 25°C 2.0 4 °C 2.5 5°C 3.0 5 Ta= 7 6V 10V 3.5 [Nch] VDS=10V 5V 4.0 S 7 4V 16V 4.5 Drain Current, ID -- A FW349 P.G S 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT12878 0.01 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT12879 No.8750-3/6 FW349 SW Time -- ID 3 [Nch] VDD=24V VGS=10V td(off) 7 5 tr 3 2 td(on) 7 5 3 2 7 5 7 0.1 3 5 7 2 1.0 3 5 VGS -- Qg 10 7 0 10 IT12880 [Nch] 10 7 5 Drain Current, ID -- A 8 6 5 4 3 3 2 10 IT12882 ID -- VDS [Pch] ASO [Nch] ≤10µs 10 1m 0µs s 10 m 0m s s DC 10 s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT12883 ID -- VGS [Pch] --5 VGS= --3V Drain Current, ID -- A --16V --2.5 --2.0 45 VDS= --10V --4V --5V --3.0 40 IT12881 --6 --10V --6 V --3.5 35 10 0.01 0.01 20 Total Gate Charge, Qg -- nC --4.5 --4.0 15 30 ID=5A 3 2 1 0 25 1.0 7 5 2 5 20 3 2 0.1 7 5 0 15 IDP=20A 3 2 7 10 Drain-to-Source Voltage, VDS -- V 5 VDS=24V ID=5A 9 5 --1.5 --4 --3 --2 --1.0 -25°C 3 Ta=7 5°C 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Coss Crss 100 10 Drain Current, ID -- A Ciss 1000 tf 100 [Nch] f=1MHz 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- VDS 3 --1 0 25° C --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 160 --0.9 0 --1.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT12884 [Pch] RDS(on) -- Ta 160 --4.0 IT12885 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 ID= --3A 100 --4.5A 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V --14 --16 IT12886 140 120 A 3.0 100 = V GS 80 60 = VGS = -, ID --4V .5A = --4 V, I D --10 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT12887 No.8750-4/6 FW349 10 5 3 -2 =- Ta 2 °C 75 1.0 7 5 3 2 --0.1 7 5 3 2 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 7 2 --1.0 3 5 7 SW Time -- ID 5 0 --10 IT12888 Drain Current, ID -- A --0.4 --0.6 --0.8 --1.0 --1.2 5 --1.4 IT12889 Ciss, Coss, Crss -- VDS [Pch] [Pch] f=1MHz 3 2 2 Ciss Ciss, Coss, Crss -- pF td(off) 100 tf 7 5 tr 3 2 td(on) 1000 7 5 3 2 Coss 100 Crss 7 10 5 7 5 --0.1 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A VGS -- Qg --10 0 7 --10 IT12890 --6 --5 --4 --3 --2 0 20 25 Total Gate Charge, Qg -- nC PD -- Ta 30 [Nch, Pch] 2.2 2.0 1.8 1.6 To t al 1.4 1.2 di 1u nit 1.0 ss ip ati on 0.8 0.6 0.4 0.2 0 0 20 40 60 80 --35 --40 --45 IT12891 [Pch] 100 120 Ambient Temperature, Ta -- °C 140 160 IT12894 ≤10µs 10 0µ s s 1 ms 10 m 10 3 2 0m s --1.0 7 5 DC 10 s op er 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 ati on Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 IT12893 Drain-to-Source Voltage, VDS -- V PD(FET 1) -- PD(FET 2) [Nch, Pch] IT12892 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s 2.4 --30 ID= --4.5A --0.01 --0.01 2 3 Allowable Power Dissipation, PD (FET 1) -- W 2.6 --25 IDP= --18A --10 7 5 3 2 --1 15 --20 ASO Drain Current, ID -- A --7 10 --15 5 3 2 5 --10 [Pch] --8 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --24V ID= --4.5A --9 Gate-to-Source Voltage, VGS -- V --0.2 Diode Forward Voltage, VSD -- V VDD= --24V VGS= --10V 3 Switching Time, SW Time -- ns --1.0 7 5 3 0.1 Allowable Power Dissipation, PD -- W [Pch] VGS=0V 3 2 7 °C 25 5°C IS -- VSD --10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [Pch] VDS= --10V Ta=7 5°C 25°C --25°C yfs -- ID 2 2.0 Mounted on a ceramic board (1500mm2✕0.8mm) PW≤10s 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation, PD (FET 2) -- W 2.0 IT12895 No.8750-5/6 FW349 Note on usage : Since the FW349 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No.8750-6/6