VEC2603 Ordering number : ENA0934 SANYO Semiconductors DATA SHEET VEC2603 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 1.8V drive. 0.75mm mount high. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --12 V Gate-to-Source Voltage VGSS ±10 ±8 V 0.15 --4 A 0.6 --16 Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : BF V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=80mA 0.15 V 1 µA ±10 µA 1.3 0.22 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91207PE TI IM TC-00000866 No. A0934-1/6 VEC2603 Continued from preceding page. Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID=80mA, VGS=4V 2.9 3.7 Ω Static Drain-to-Source On-State Resistance ID=40mA, VGS=2.5V 3.7 5.2 Ω ID=10mA, VGS=1.5V 6.4 12.8 Input Capacitance RDS(on)3 Ciss VDS=10V, f=1MHz 7.0 pF Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max Ω Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 1.58 Gate-to-Source Charge 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 V(BR)DSS nC 1.2 V --10 µA ±10 µA --1.0 V [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±6.4V, VDS=0V VDS=--6V, ID=--1mA yfs RDS(on)1 VDS=--6V, ID=--2A Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 --12 V --0.3 4.5 7.6 S ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V 40 53 mΩ 57 80 mΩ 78 112 mΩ Input Capacitance Ciss ID=--0.3A, VGS=--1.8V VDS=--6V, f=1MHz 940 pF Output Capacitance Coss VDS=--6V, f=1MHz 230 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 180 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 120 ns See specified Test Circuit. 97 ns tf See specified Test Circuit. 110 ns 11 nC 1.6 nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--4A VDS=--6V, VGS=--4.5V, ID=--4A Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--4A Diode Forward Voltage VSD IS=--4A, VGS=0V Package Dimensions 0.25 8 7 7 6 1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 0.15 6 5 2 3 4 0.65 1 0.75 2.9 0.07 1 V 5 2.3 0.25 2.8 8 nC --1.5 Electrical Connection unit : mm (typ) 7012-009 0.3 2.8 --0.85 2 3 4 Top view 1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 SANYO : VEC8 No. A0934-2/6 VEC2603 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --6V VIN 4V 0V 0V --4.5V ID=80mA RL=187.5Ω VIN D ID= --2A RL=3Ω VOUT VIN VOUT D PW=10µs D.C.≤1% PW=10µs D.C.≤1% G G VEC2603 P.G 50Ω ID -- VDS 0.16 P.G [Nch] VEC2603 50Ω S S ID -- VGS 0.30 [Nch] 0.08 VGS=1.5V 0.06 0.04 °C 25 °C 0.20 75 Drain Current, ID -- A 0.10 Ta= --25 5V 0.25 V 2.0 V 0.12 2. 3.0 V 3.5V 4.0V 6.0 Drain Current, ID -- A 0.14 °C VDS=10V 0.15 0.10 0.05 0.02 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT00029 RDS(on) -- VGS 10 0 1.0 [Nch] RDS(on) -- ID 10 [Nch] VGS=4V 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 8 7 ID=80mA 6 40mA 5 3.0 IT00030 4 3 2 7 5 Ta=75°C 25°C 3 --25°C 2 1 1.0 0.01 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V [Nch] Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00033 5 7 0.1 2 3 5 RDS(on) -- ID 100 7 1.0 IT00032 [Nch] VGS=1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 3 3 Drain Current, ID -- A VGS=2.5V 5 2 IT00031 RDS(on) -- ID 10 10 5 3 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 1.0 0.001 2 3 5 7 0.01 2 Drain Current, ID -- A 3 5 7 0.1 IT00034 No. A0934-3/6 VEC2603 RDS(on) -- Ta [Nch] 6 mA 5 =40 , ID .5V =2 V GS 4 mA =80 , ID V 0 . =4 VGS 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 5 3 2 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 7 5 3 2 2 Ciss 7 Coss 3 Crss 2 0.1 3 5 7 1.0 IT00036 [Nch] 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 2 0.1 IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 7 VDD=15V VGS=4V [Nch] VDS=10V ID=150mA 9 2 5 Drain Current, ID -- A [Nch] 5 5 3 SW Time -- ID f=1MHz 10 2 IT00037 7 Ciss, Coss, Crss -- pF 0.1 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 25°C 75°C 7 Switching Time, SW Time -- ns --2 5 °C 25 °C 75 °C 2 Ta = Source Current, IS -- A 3 0.6 25°C -Ta= 2 1000 5 0.01 0.5 3 [Nch] 7 7 5 Drain Current, ID -- A VGS=0V 0.1 7 0.01 0.01 160 [Nch] VDS=10V IT00035 IS -- VSD 1.0 yfs -- ID 1.0 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PW≤10µs 1 10 ms 10 ms 0m s DC (T o a= pe 25 ra °C tio ) n ID=0.15A 0.1 7 5 3 2 Operation in this area is limited by RDS(on). 0.01 7 5 0.001 0.01 0 [Nch] IDP=0.6A 3 2 20 IT00039 ASO 2 1.0 7 5 18 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT12926 No. A0934-4/6 VEC2603 ID -- VDS ID -- VGS --4.0 --3.5 --2.5 --2.0 --1.5 --1.0 Ta= 7 VGS= --1.0V 25 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --1.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V IT09403 RDS(on) -- VGS 150 --0.9 °C --25°C --1 --3.0 5°C --2 0 [Pch] VDS= --6V --1.5V Drain Current, ID -- A --3 [Pch] --4.0V --2.5 V --2.0 V --1. 8V --6.0V --4.5V Drain Current, ID -- A --4 [Pch] RDS(on) -- Ta 150 --1.8 IT09404 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 75 50 25 --1 --2 --3 --4 --5 Gate-to-Source Voltage, VGS -- V [Pch] 5 C 5° --2 = °C Ta 75 2 1.0 °C 25 7 5 3 0.1 --0.01 2 3 5 7 --0.1 2 5 7 --1.0 3 2 3 Drain Current, ID -- A SW Time -- ID 5 --40 --20 0 20 40 60 80 100 120 140 160 IT12931 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 --0.3 5 7 --10 IT09407 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V 3 --1.1 IT09408 Ciss, Coss, Crss -- VDS [Pch] VDD= --6V VGS= --4.5V [Pch] f=1MHz 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25 3 2 2 3 50 --10 7 5 VDS= --6V 3 A Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 --6 .3 = --0 , ID 1.8V --1.0A , I D= --2.5V = VGS = --2.0A 4.5V, I D V GS= -- IT12930 yfs -- ID 10 = -VGS 75 0 --60 0 0 100 --25° C --2.0A 5°C ID= --0.3A 100 125 25° C --1.0A 125 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C td (off) 100 tf 7 tr 5 3 2 td(on) Ciss 1000 7 5 3 Coss Crss 2 10 7 --0.1 100 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 IT09409 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT09410 No. A0934-5/6 VEC2603 VGS -- Qg --4.0 5 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC IT09411 PD -- Ta 1.2 11 ID= --4A DC 100 ms ope rati on( Ta= 2 5°C ) Operation in this area is limited by RDS(on). 3 2 3 2 1 PW≤10µs 10 0 1 µs 10m ms s --1.0 7 5 --0.5 [Pch] IDP= --16A 3 2 --0.1 7 5 0 Allowable Power Dissipation, PD -- W --10 7 5 --1.0 0 ASO [Pch] VDS= --6V ID= --4A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT12932 Drain-to-Source Voltage, VDS -- V [Nch, Pch] 1.0 M ou 0.9 nte do 0.8 na ce ram ic 0.6 bo ard (9 00 0.4 mm 2 ✕0 .8m m) 1 0.2 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12929 Note on usage : Since the VEC2603 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. PS No. A0934-6/6