SANYO VEC2603

VEC2603
Ordering number : ENA0934
SANYO Semiconductors
DATA SHEET
VEC2603
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
•
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
P-channel MOSFET enables high-density mounting.
Best suited for load switches.
1.8V drive.
0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--12
V
Gate-to-Source Voltage
VGSS
±10
±8
V
0.15
--4
A
0.6
--16
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
A
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : BF
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=80mA
0.15
V
1
µA
±10
µA
1.3
0.22
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000866 No. A0934-1/6
VEC2603
Continued from preceding page.
Ratings
Parameter
Symbol
RDS(on)1
RDS(on)2
ID=80mA, VGS=4V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
ID=40mA, VGS=2.5V
3.7
5.2
Ω
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
RDS(on)3
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
td(off)
See specified Test Circuit.
65
ns
See specified Test Circuit.
155
ns
tf
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
Fall Time
Conditions
min
typ
Unit
max
Ω
Total Gate Charge
Qg
nC
Qgs
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
1.58
Gate-to-Source Charge
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
V(BR)DSS
nC
1.2
V
--10
µA
±10
µA
--1.0
V
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
IDSS
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
yfs
RDS(on)1
VDS=--6V, ID=--2A
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
--12
V
--0.3
4.5
7.6
S
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
40
53
mΩ
57
80
mΩ
78
112
mΩ
Input Capacitance
Ciss
ID=--0.3A, VGS=--1.8V
VDS=--6V, f=1MHz
940
pF
Output Capacitance
Coss
VDS=--6V, f=1MHz
230
pF
Reverse Transfer Capacitance
Crss
VDS=--6V, f=1MHz
180
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
td(off)
See specified Test Circuit.
120
ns
See specified Test Circuit.
97
ns
tf
See specified Test Circuit.
110
ns
11
nC
1.6
nC
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
VDS=--6V, VGS=--4.5V, ID=--4A
VDS=--6V, VGS=--4.5V, ID=--4A
Gate-to-Drain “Miller” Charge
Qgd
VDS=--6V, VGS=--4.5V, ID=--4A
Diode Forward Voltage
VSD
IS=--4A, VGS=0V
Package Dimensions
0.25
8
7
7
6
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
0.15
6 5
2
3
4
0.65
1
0.75
2.9
0.07
1
V
5
2.3
0.25
2.8
8
nC
--1.5
Electrical Connection
unit : mm (typ)
7012-009
0.3
2.8
--0.85
2
3
4
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
SANYO : VEC8
No. A0934-2/6
VEC2603
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
VDD= --6V
VIN
4V
0V
0V
--4.5V
ID=80mA
RL=187.5Ω
VIN
D
ID= --2A
RL=3Ω
VOUT
VIN
VOUT
D
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
G
G
VEC2603
P.G
50Ω
ID -- VDS
0.16
P.G
[Nch]
VEC2603
50Ω
S
S
ID -- VGS
0.30
[Nch]
0.08
VGS=1.5V
0.06
0.04
°C
25
°C
0.20
75
Drain Current, ID -- A
0.10
Ta=
--25
5V
0.25
V
2.0
V
0.12
2.
3.0
V
3.5V
4.0V
6.0
Drain Current, ID -- A
0.14
°C
VDS=10V
0.15
0.10
0.05
0.02
0
0
0
0.2
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
IT00029
RDS(on) -- VGS
10
0
1.0
[Nch]
RDS(on) -- ID
10
[Nch]
VGS=4V
9
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
8
7
ID=80mA
6
40mA
5
3.0
IT00030
4
3
2
7
5
Ta=75°C
25°C
3
--25°C
2
1
1.0
0.01
0
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
[Nch]
Ta=75°C
25°C
--25°C
2
1.0
0.01
2
3
5
7
0.1
2
Drain Current, ID -- A
3
5
7
1.0
IT00033
5
7
0.1
2
3
5
RDS(on) -- ID
100
7 1.0
IT00032
[Nch]
VGS=1.5V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
3
3
Drain Current, ID -- A
VGS=2.5V
5
2
IT00031
RDS(on) -- ID
10
10
5
3
2
10
Ta=75°C
7
5
--25°C
3
25°C
2
1.0
0.001
2
3
5
7
0.01
2
Drain Current, ID -- A
3
5
7
0.1
IT00034
No. A0934-3/6
VEC2603
RDS(on) -- Ta
[Nch]
6
mA
5
=40
, ID
.5V
=2
V GS
4
mA
=80
, ID
V
0
.
=4
VGS
3
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
5
3
2
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
7
5
3
2
2
Ciss
7
Coss
3
Crss
2
0.1
3
5
7
1.0
IT00036
[Nch]
5
3
td(off)
2
tf
100
7
tr
5
3
td(on)
2
2
3
5
7
2
0.1
IT00038
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
3
7
VDD=15V
VGS=4V
[Nch]
VDS=10V
ID=150mA
9
2
5
Drain Current, ID -- A
[Nch]
5
5
3
SW Time -- ID
f=1MHz
10
2
IT00037
7
Ciss, Coss, Crss -- pF
0.1
10
0.01
1.2
Ciss, Coss, Crss -- VDS
100
25°C
75°C
7
Switching Time, SW Time -- ns
--2
5
°C
25
°C
75
°C
2
Ta
=
Source Current, IS -- A
3
0.6
25°C
-Ta=
2
1000
5
0.01
0.5
3
[Nch]
7
7
5
Drain Current, ID -- A
VGS=0V
0.1
7
0.01
0.01
160
[Nch]
VDS=10V
IT00035
IS -- VSD
1.0
yfs -- ID
1.0
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
8
7
6
5
4
3
2
1
1.0
0
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00040
PW≤10µs
1
10 ms
10 ms
0m
s
DC
(T o
a= pe
25 ra
°C tio
) n
ID=0.15A
0.1
7
5
3
2
Operation in this
area is limited by RDS(on).
0.01
7
5
0.001
0.01
0
[Nch]
IDP=0.6A
3
2
20
IT00039
ASO
2
1.0
7
5
18
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5 7
IT12926
No. A0934-4/6
VEC2603
ID -- VDS
ID -- VGS
--4.0
--3.5
--2.5
--2.0
--1.5
--1.0
Ta=
7
VGS= --1.0V
25
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Gate-to-Source Voltage, VGS -- V
IT09403
RDS(on) -- VGS
150
--0.9
°C --25°C
--1
--3.0
5°C
--2
0
[Pch]
VDS= --6V
--1.5V
Drain Current, ID -- A
--3
[Pch]
--4.0V
--2.5
V
--2.0
V
--1.
8V
--6.0V --4.5V
Drain Current, ID -- A
--4
[Pch]
RDS(on) -- Ta
150
--1.8
IT09404
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
75
50
25
--1
--2
--3
--4
--5
Gate-to-Source Voltage, VGS -- V
[Pch]
5
C
5°
--2
=
°C
Ta
75
2
1.0
°C
25
7
5
3
0.1
--0.01
2
3
5 7 --0.1
2
5 7 --1.0
3
2
3
Drain Current, ID -- A
SW Time -- ID
5
--40
--20
0
20
40
60
80
100
120
140
160
IT12931
IS -- VSD
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.01
--0.3
5 7 --10
IT09407
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
3
--1.1
IT09408
Ciss, Coss, Crss -- VDS
[Pch]
VDD= --6V
VGS= --4.5V
[Pch]
f=1MHz
2
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
25
3
2
2
3
50
--10
7
5
VDS= --6V
3
A
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
7
--6
.3
= --0
, ID
1.8V
--1.0A
, I D=
--2.5V
=
VGS
= --2.0A
4.5V, I D
V GS= --
IT12930
yfs -- ID
10
= -VGS
75
0
--60
0
0
100
--25°
C
--2.0A
5°C
ID= --0.3A
100
125
25°
C
--1.0A
125
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
td (off)
100
tf
7
tr
5
3
2
td(on)
Ciss
1000
7
5
3
Coss
Crss
2
10
7
--0.1
100
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
IT09409
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT09410
No. A0934-5/6
VEC2603
VGS -- Qg
--4.0
5
3
2
--3.5
--3.0
--2.5
--2.0
--1.5
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
IT09411
PD -- Ta
1.2
11
ID= --4A
DC
100
ms
ope
rati
on(
Ta=
2
5°C
)
Operation in this
area is limited by RDS(on).
3
2
3
2
1
PW≤10µs
10
0
1 µs
10m ms
s
--1.0
7
5
--0.5
[Pch]
IDP= --16A
3
2
--0.1
7
5
0
Allowable Power Dissipation, PD -- W
--10
7
5
--1.0
0
ASO
[Pch]
VDS= --6V
ID= --4A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
IT12932
Drain-to-Source Voltage, VDS -- V
[Nch, Pch]
1.0
M
ou
0.9
nte
do
0.8
na
ce
ram
ic
0.6
bo
ard
(9
00
0.4
mm
2
✕0
.8m
m)
1
0.2
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12929
Note on usage : Since the VEC2603 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0934-6/6