ECH8661 Ordering number : ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8661 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID IDP 7 --5.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% 40 --40 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 Total Dissipation PT When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C W Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.25 Top View Packing Type : TL 2.9 0.15 8 Marking 5 TG 2.3 4 1 0.65 0.9 0.25 LOT No. TL Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 to 0.02 Bottom View SANYO : ECH8 http://semicon.sanyo.com/en/network 72110PE TK IM TC-00002431 No. A1777-1/6 ECH8661 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A 3.7 RDS(on)1 ID=3.5A, VGS=10V 18 24 mΩ RDS(on)2 ID=2A, VGS=4.5V 29 41 mΩ RDS(on)3 ID=2A, VGS=4V 39 55 mΩ Input Capacitance Ciss 710 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 72 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr See specified Test Circuit. 25 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 43 ns Fall Time tf Qg See specified Test Circuit. 25 ns VDS=15V, VGS=10V, ID=7A 11.8 nC VDS=15V, VGS=10V, ID=7A VDS=15V, VGS=10V, ID=7A IS=7A, VGS=0V 2.4 nC Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 V 1.2 1 μA ±10 μA 2.6 2.0 0.79 V S nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss --30 V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --1.2 --2.6 V VDS=--10V, ID=--2.5A 5.2 S ID=--2.5A, VGS=--10V ID=--1.5A, VGS=--4.5V 30 39 mΩ 55 77 mΩ ID=--1.5A, VGS=--4V VDS=--10V, f=1MHz 58 82 mΩ 600 pF VDS=--10V, f=1MHz VDS=--10V, f=1MHz 145 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time See specified Test Circuit. 7.2 ns Rise Time td(on) tr See specified Test Circuit. 23 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 63 ns Fall Time tf See specified Test Circuit. 42 ns Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--5.5A 13 nC Gate-to-Source Charge Qgs 1.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=--15V, VGS=--10V, ID=--5.5A VDS=--15V, VGS=--10V, ID=--5.5A Diode Forward Voltage VSD IS=--5.5A, VGS=0V 3.2 --0.82 nC --1.2 V No. A1777-2/6 ECH8661 Switching Time Test Circuit [N-channel] VDD=15V VIN 0V --10V ID=3.5A RL=4.3Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN VOUT D PW=10μs D.C.≤1% G 50Ω 6.0V 4.5V 4.0V S ID -- VGS 14 V [Nch] VDS=10V 13 3.5 12 11 3 2 VGS=3.0V 10 9 8 7 6 5 C 4 50Ω 5°C 5 [Nch] Drain Current, ID -- A Drain Current, ID -- A 6 ECH8661 P.G S ID -- VDS 16.0V 10.0V 8.0V 7 VOUT G ECH8661 P.G ID= --2.5A RL=6Ω VIN 4 2 0 1 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 80 1.0 Ta= 7 3 1 25°C --25 ° 10V 0V [P-channel] 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V IT13723 [Nch] RDS(on) -- Ta 70 4.5 5.0 IT13724 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 ID=2A 60 3.5A 50 40 30 20 10 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT13725 60 50 A I =2.0 4.0V, D = S VG 2.0A , I D= V 5 . 4 = VGS .5A , I D=3 10.0V = V GS 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT13726 No. A1777-3/6 ECH8661 °C -25 = °C Ta 75 2 1.0 °C 25 7 5 3 2 0.1 7 0.01 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 °C 3 [Nch] --25 5 25° C VDS=10V 7 IS -- VSD 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] Ta =7 5°C | yfs | -- ID 10 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 0.01 0.3 5 7 10 2 IT13727 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V [Nch] Ciss, Coss, Crss -- VDS 2 3 1000 Ciss, Coss, Crss -- pF tf 2 tr td(on) 10 7 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A Coss 100 3 3 Crss [Nch] 7 6 5 4 3 2 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 10 7 5 3 2 15 s μs 10 ms 10 0 m op s era tio n( Ta= 25° Operation in this C) area is limited by RDS(on). DC 1.0 7 5 3 2 0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ID -- VGS --9 2 3 5 IT15731 [Pch] V .0 --6.0 --7 --6 --5 --4 --3 --2 --1 --0.3 100 1m --0.5 --0.2 [Nch] --8 VGS= --2.5V --0.1 30 IT13730 VDS= --10V --1.0 0 25 Drain-to-Source Voltage, VDS -- V [Pch] --1.5 0 20 ID=7A 0.01 0.01 12 --3 --4.0V V -4.5 V --3. 5V --10.0V --18.0V 10 IDP=40A (PW≤10μs) IT15732 ID -- VDS --2.0 11 Drain Current, ID -- A 1 5 ASO 100 7 5 3 2 8 0 0 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 2 VDS=15V ID=7A 9 Drain Current, ID -- A 2 IT13729 VGS -- Qg 10 --2.5 3 5 VDD=15V VGS=10V 2 0.1 --3.0 5 7 3 0 Ciss 7 Ta= 75° C --25 °C 25° C Switching Time, SW Time -- ns td(off) [Nch] f=1MHz 7 5 1.0 IT13728 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14855 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT14856 No. A1777-4/6 ECH8661 RDS(on) -- VGS [Pch] 100 80 60 40 20 --4 --6 --8 --10 --12 --14 5 3 7 25 °C 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --20 5 7 0 20 40 60 80 100 120 IS -- VSD 5 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 IT14860 Ciss, Coss, Crss -- VDS 2 1000 Ciss, Coss, Crss -- pF 2 tr 10 td(on) 7 Ciss 5 3 2 Coss Crss 100 5 VDD= --15V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 5 7 --10 2 IT14861 Drain Current, ID -- A VGS -- Qg --10 [Pch] --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT15733 0 --10 --5 --15 --25 --20 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --5.5A --9 [Pch] f=1MHz 3 3 --0.1 --1.2 Diode Forward Voltage, VSD -- V tf 7 160 [Pch] VGS=0V --10 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 [Pch] 140 IT15728 td(off) 7 Switching Time, SW Time -- ns --40 IT14859 SW Time -- ID 100 20 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 7 1.0 30 Ambient Temperature, Ta -- °C 10 °C -25 =a T °C 75 40 10 --60 --16 VDS= --10V 2 50 IT15727 | yfs | -- ID 2 60 5°C --2 0 A 1.5 = -I D V, 4.0 = -1.5A S = -VG I , D 4.5V = -A S VG --2.5 , I D= V 0 . 0 = --1 VGS 70 C 120 80 --25 ° --2.5A Ta= 7 140 90 25°C ID= --1.5A 160 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V [Pch] Ta=25°C 180 0 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT14862 ASO [Pch] IDP= --40A (PW≤10μs) 10 1m s ID= --5.5A 0μ s 10m DC s 100 ms ope rat ion Operation in this area is limited by RDS(on). (Ta =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15729 No. A1777-5/6 ECH8661 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 [Nch/Pch] 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15730 Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1777-6/6