SANYO ECH8661

ECH8661
Ordering number : ENA1777
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
ECH8661
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
IDP
7
--5.5
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
40
--40
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
Total Dissipation
PT
When mounted on ceramic substrate (900mm2×0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
W
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.25
Top View
Packing Type : TL
2.9
0.15
8
Marking
5
TG
2.3
4
1
0.65
0.9
0.25
LOT No.
TL
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
2.8
0 to 0.02
Bottom View
SANYO : ECH8
http://semicon.sanyo.com/en/network
72110PE TK IM TC-00002431 No. A1777-1/6
ECH8661
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
3.7
RDS(on)1
ID=3.5A, VGS=10V
18
24
mΩ
RDS(on)2
ID=2A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=2A, VGS=4V
39
55
mΩ
Input Capacitance
Ciss
710
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
72
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
25
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
43
ns
Fall Time
tf
Qg
See specified Test Circuit.
25
ns
VDS=15V, VGS=10V, ID=7A
11.8
nC
VDS=15V, VGS=10V, ID=7A
VDS=15V, VGS=10V, ID=7A
IS=7A, VGS=0V
2.4
nC
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
30
V
1.2
1
μA
±10
μA
2.6
2.0
0.79
V
S
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
RDS(on)1
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
--30
V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--1.2
--2.6
V
VDS=--10V, ID=--2.5A
5.2
S
ID=--2.5A, VGS=--10V
ID=--1.5A, VGS=--4.5V
30
39
mΩ
55
77
mΩ
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
58
82
mΩ
600
pF
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
145
pF
Reverse Transfer Capacitance
Crss
110
pF
Turn-ON Delay Time
See specified Test Circuit.
7.2
ns
Rise Time
td(on)
tr
See specified Test Circuit.
23
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
63
ns
Fall Time
tf
See specified Test Circuit.
42
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--5.5A
13
nC
Gate-to-Source Charge
Qgs
1.8
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--15V, VGS=--10V, ID=--5.5A
VDS=--15V, VGS=--10V, ID=--5.5A
Diode Forward Voltage
VSD
IS=--5.5A, VGS=0V
3.2
--0.82
nC
--1.2
V
No. A1777-2/6
ECH8661
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
0V
--10V
ID=3.5A
RL=4.3Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
6.0V
4.5V
4.0V
S
ID -- VGS
14
V
[Nch]
VDS=10V
13
3.5
12
11
3
2
VGS=3.0V
10
9
8
7
6
5
C
4
50Ω
5°C
5
[Nch]
Drain Current, ID -- A
Drain Current, ID -- A
6
ECH8661
P.G
S
ID -- VDS
16.0V 10.0V 8.0V
7
VOUT
G
ECH8661
P.G
ID= --2.5A
RL=6Ω
VIN
4
2
0
1
0
0
0.2
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
80
1.0
Ta=
7
3
1
25°C --25
°
10V
0V
[P-channel]
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate-to-Source Voltage, VGS -- V
IT13723
[Nch]
RDS(on) -- Ta
70
4.5
5.0
IT13724
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
ID=2A
60
3.5A
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT13725
60
50
A
I =2.0
4.0V, D
=
S
VG
2.0A
, I D=
V
5
.
4
=
VGS
.5A
, I D=3
10.0V
=
V GS
40
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT13726
No. A1777-3/6
ECH8661
°C
-25
=
°C
Ta
75
2
1.0
°C
25
7
5
3
2
0.1
7
0.01
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
°C
3
[Nch]
--25
5
25°
C
VDS=10V
7
IS -- VSD
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
Ta
=7
5°C
| yfs | -- ID
10
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
SW Time -- ID
100
0.01
0.3
5 7 10
2
IT13727
0.4
0.5
0.6
0.7
0.8
0.9
Diode Forward Voltage, VSD -- V
[Nch]
Ciss, Coss, Crss -- VDS
2
3
1000
Ciss, Coss, Crss -- pF
tf
2
tr
td(on)
10
7
5
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
Coss
100
3
3
Crss
[Nch]
7
6
5
4
3
2
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
10
7
5
3
2
15
s
μs
10
ms
10
0
m
op
s
era
tio
n(
Ta=
25°
Operation in this
C)
area is limited by RDS(on).
DC
1.0
7
5
3
2
0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
ID -- VGS
--9
2 3
5
IT15731
[Pch]
V
.0
--6.0
--7
--6
--5
--4
--3
--2
--1
--0.3
100
1m
--0.5
--0.2
[Nch]
--8
VGS= --2.5V
--0.1
30
IT13730
VDS= --10V
--1.0
0
25
Drain-to-Source Voltage, VDS -- V
[Pch]
--1.5
0
20
ID=7A
0.01
0.01
12
--3
--4.0V
V -4.5
V --3.
5V
--10.0V
--18.0V
10
IDP=40A (PW≤10μs)
IT15732
ID -- VDS
--2.0
11
Drain Current, ID -- A
1
5
ASO
100
7
5
3
2
8
0
0
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
2
VDS=15V
ID=7A
9
Drain Current, ID -- A
2
IT13729
VGS -- Qg
10
--2.5
3
5
VDD=15V
VGS=10V
2
0.1
--3.0
5
7
3
0
Ciss
7
Ta=
75°
C
--25
°C
25°
C
Switching Time, SW Time -- ns
td(off)
[Nch]
f=1MHz
7
5
1.0
IT13728
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT14855
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
IT14856
No. A1777-4/6
ECH8661
RDS(on) -- VGS
[Pch]
100
80
60
40
20
--4
--6
--8
--10
--12
--14
5
3
7
25
°C
5
3
2
0.1
7
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
--20
5 7
0
20
40
60
80
100
120
IS -- VSD
5
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.4
--0.6
--0.8
--1.0
IT14860
Ciss, Coss, Crss -- VDS
2
1000
Ciss, Coss, Crss -- pF
2
tr
10
td(on)
7
Ciss
5
3
2
Coss
Crss
100
5
VDD= --15V
VGS= --10V
2
3
5
7 --1.0
2
3
5
7
5
7 --10
2
IT14861
Drain Current, ID -- A
VGS -- Qg
--10
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
11
12
13
IT15733
0
--10
--5
--15
--25
--20
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --5.5A
--9
[Pch]
f=1MHz
3
3
--0.1
--1.2
Diode Forward Voltage, VSD -- V
tf
7
160
[Pch]
VGS=0V
--10
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
[Pch]
140
IT15728
td(off)
7
Switching Time, SW Time -- ns
--40
IT14859
SW Time -- ID
100
20
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Pch]
7
1.0
30
Ambient Temperature, Ta -- °C
10
°C
-25
=a
T
°C
75
40
10
--60
--16
VDS= --10V
2
50
IT15727
| yfs | -- ID
2
60
5°C
--2
0
A
1.5
= -I
D
V,
4.0
= -1.5A
S
= -VG
I
, D
4.5V
= -A
S
VG
--2.5
, I D=
V
0
.
0
= --1
VGS
70
C
120
80
--25
°
--2.5A
Ta=
7
140
90
25°C
ID= --1.5A
160
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
[Pch]
Ta=25°C
180
0
RDS(on) -- Ta
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
200
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--30
IT14862
ASO
[Pch]
IDP= --40A (PW≤10μs)
10
1m
s
ID= --5.5A
0μ
s
10m
DC
s
100
ms
ope
rat
ion
Operation in this
area is limited by RDS(on).
(Ta
=2
5°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT15729
No. A1777-5/6
ECH8661
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
[Nch/Pch]
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15730
Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
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applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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mentioned above.
This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1777-6/6