ECH8673 Ordering number : ENA1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8673 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% P-channel Unit 40 --40 V ±20 ±20 V 3.5 --2.5 A 30 --30 A When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W Tch 150 °C Tstg --55 to +150 °C Total Dissipation PD PT Channel Temperature Storage Temperature W Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.25 Top View Packing Type : TL 2.9 0.15 8 Marking 5 TU 2.3 4 1 0.65 0.9 0.25 Lot No. TL Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 to 0.02 Bottom View SANYO : ECH8 http://semicon.sanyo.com/en/network D0810PE TKIM TC-00002347 No. A1892-1/6 ECH8673 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=1mA, VGS=0V VDS=40V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=2A, VGS=10V 65 85 mΩ RDS(on)2 ID=1A, VGS=4.5V 105 147 mΩ RDS(on)3 ID=1A, VGS=4V 125 175 mΩ Input Capacitance Ciss 230 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 9.9 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.8 ns Rise Time tr See specified Test Circuit. 10.6 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 18.5 ns Fall Time tf Qg See specified Test Circuit. 9.8 ns VDS=20V, VGS=10V, ID=3.5A 5.3 nC VDS=20V, VGS=10V, ID=3.5A VDS=20V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V 1.1 nC Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 40 V 1.2 VDS=10V, ID=2A 1 μA ±10 μA 2.6 1.7 1.1 0.84 V S nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss --40 V VDS=--40V, VGS=0V VGS=±16V, VDS=0V --1.2 --2.6 V VDS=--10V, ID=--1.5A 2.7 S ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V 125 163 mΩ 190 266 mΩ ID=--0.75A, VGS=--4V VDS=--20V, f=1MHz 215 301 mΩ 198 pF VDS=--20V, f=1MHz VDS=--20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss 8.1 pF Turn-ON Delay Time See specified Test Circuit. 5.8 ns Rise Time td(on) tr See specified Test Circuit. 10.3 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 27.6 ns Fall Time tf See specified Test Circuit. 17.3 ns Total Gate Charge Qg VDS=--20V, VGS=--10V, ID=--2.5A 5.9 nC Gate-to-Source Charge Qgs 0.84 nC Gate-to-Drain “Miller” Charge Qgd VDS=--20V, VGS=--10V, ID=--2.5A VDS=--20V, VGS=--10V, ID=--2.5A Diode Forward Voltage VSD IS=--2.5A, VGS=0V 1.3 --0.87 nC --1.2 V No. A1892-2/6 ECH8673 Switching Time Test Circuit [N-channel] 10V 0V [P-channel] VDD=20V VIN 0V --10V ID=2A RL=10Ω VIN D PW=10μs D.C.≤1% VDD= --20V VIN VOUT D PW=10μs D.C.≤1% G 50Ω [Nch] V V 50Ω S ID -- VGS 7.0 [Nch] VDS=10V 6.5 4.0 4.5 10.0V 6.0V 16.0V 3.0 ECH8673 P.G S ID -- VDS 3.5 VOUT G ECH8673 P.G ID= --1.5A RL=13Ω VIN 6.0 3.5V 1.5 1.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 VGS=3.0V 0.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 250 0.9 0 1.0 [Nch] 2A 150 100 50 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT16158 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RDS(on) -- Ta 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1A 0.5 Gate-to-Source Voltage, VGS -- V IT16156 Ta=25°C 200 0 25° C --25°C 2.0 5.0 Ta= 75° C Drain Current, ID -- A Drain Current, ID -- A 5.5 2.5 4.5 5.0 IT16157 [Nch] 200 1A , I D= =4.0V VGS 1A , I D= 4.5V = VGS =2A V, I D =10.0 VGS 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16159 No. A1892-3/6 ECH8673 7 5 3 2 5°C --2 = C Ta 75° 1.0 7 5 °C 25 3 [Nch] VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 0.01 5 7 10 IT16160 Drain Current, ID -- A 5 0 0.2 0.4 0.6 Ciss, Coss, Crss -- pF td(off) 2 tf 10 7 td(on) tr 5 3 1.0 1.2 Ciss, Coss, Crss -- VDS 1000 7 5 1.4 IT16161 [Nch] f=1MHz 3 3 0.8 Diode Forward Voltage, VSD -- V [Nch] VDD=20V VGS=10V 7 Switching Time, SW Time -- ns IS -- VSD 10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] VDS=10V Ta=7 5°C 25°C --25°C | yfs | -- ID 10 Ciss 2 100 7 5 Coss 3 2 Crss 10 7 5 3 2 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A [Nch] Drain Current, ID -- A 7 6 5 4 3 2 1 2 3 4 5 .0V --4 V 5V --4 . --6. 0 0V --10. 0V [Pch] ID=3.5A DC op era 7 5 3 2 --1.0 --5.0 40 IT16163 [Nch] Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS 5 7 100 IT16165 [Pch] VDS= --10V --3.5 --3.0 --2.5 --2.0 --1.5 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16166 Ta= 7 --0.5 0 25° VGS= --2.5V --0.2 35 10 0μ 1m s s 10 10 ms 0m s --1.0 --0.5 --0.1 30 --4.0 --3.0V 0 25 tio n( Ta Operation in this =2 5°C area is limited by RDS(on). ) 0.1 7 5 3 2 --4.5 --1.5 0 20 Drain-to-Source Voltage, VDS -- V 5V --3. --16. Drain Current, ID -- A --2.0 10 7 5 3 2 1.0 IT16164 ID -- VDS 15 IDP=30A (PW≤10μs) 0.01 0.1 6 Total Gate Charge, Qg -- nC --2.5 10 --25 °C 1 Drain Current, ID -- A 0 5 ASO 100 7 5 3 2 8 0 0 Drain-to-Source Voltage, VDS -- V VDS=20V ID=3.5A 9 Gate-to-Source Voltage, VGS -- V 10 IT16162 VGS -- Qg 10 1.0 7 C 2 5°C 1.0 0.1 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT16167 No. A1892-4/6 ECH8673 RDS(on) -- VGS [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.75A 350 --1.5A 300 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 2 5°C --2 = C Ta 75° 1.0 7 °C 25 5 3 250 = -VGS 200 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 100 50 --40 --20 0 5 20 40 2 tf 10 tr 7 td(on) 5 3 100 120 140 160 IT16169 [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Ciss, Coss, Crss -- VDS 1000 7 5 --1.4 IT16171 [Pch] f=1MHz Ciss 2 Ciss, Coss, Crss -- pF 3 80 IS -- VSD 3 td(off) 60 Diode Forward Voltage, VSD -- V [Pch] VDD= --20V VGS= --10V 7 .5A = --1 V, I D 0.0 = --1 VGS 100 --0.01 5 7 --10 IT16170 Drain Current, ID -- A A 0.75 = -V, I D --4.5 = VGS 150 3 2 2 0.1 --0.01 Switching Time, SW Time -- ns = -, ID 4.0V --10 7 5 5 3 A 0.75 300 Ambient Temperature, Ta -- °C [Pch] VDS= --10V 7 350 IT16168 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 400 0 --60 --16 [Pch] C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 RDS(on) -- Ta 450 Ta=25°C Ta=75 ° 450 100 7 5 Coss 3 2 10 7 5 Crss 3 2 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A [Pch] --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC --5 0 --10 6 7 IT16174 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V VDS= --20V ID= --2.5A --9 Gate-to-Source Voltage, VGS -- V 1.0 --10 IT16172 VGS -- Qg --10 7 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO --40 IT16173 [Pch] IDP= --30A (PW≤10μs) 10 0μ 1m s s 10 m s 10 0m s ID= --2.5A DC op era Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16175 No. A1892-5/6 ECH8673 PD -- Ta [Nch/Pch] When mounted on ceramic substrate (1200mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.8 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16176 Note on usage : Since the ECH8673 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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