SANYO ECH8673

ECH8673
Ordering number : ENA1892
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
ECH8673
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance Nch: RDS(on)1=65mΩ(typ.), Pch: ON-resistance RDS(on)1=125mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
P-channel
Unit
40
--40
V
±20
±20
V
3.5
--2.5
A
30
--30
A
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
1.3
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
Tch
150
°C
Tstg
--55 to +150
°C
Total Dissipation
PD
PT
Channel Temperature
Storage Temperature
W
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.25
Top View
Packing Type : TL
2.9
0.15
8
Marking
5
TU
2.3
4
1
0.65
0.9
0.25
Lot No.
TL
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
2.8
0 to 0.02
Bottom View
SANYO : ECH8
http://semicon.sanyo.com/en/network
D0810PE TKIM TC-00002347 No. A1892-1/6
ECH8673
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
ID=2A, VGS=10V
65
85
mΩ
RDS(on)2
ID=1A, VGS=4.5V
105
147
mΩ
RDS(on)3
ID=1A, VGS=4V
125
175
mΩ
Input Capacitance
Ciss
230
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
9.9
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5.8
ns
Rise Time
tr
See specified Test Circuit.
10.6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
18.5
ns
Fall Time
tf
Qg
See specified Test Circuit.
9.8
ns
VDS=20V, VGS=10V, ID=3.5A
5.3
nC
VDS=20V, VGS=10V, ID=3.5A
VDS=20V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
1.1
nC
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
40
V
1.2
VDS=10V, ID=2A
1
μA
±10
μA
2.6
1.7
1.1
0.84
V
S
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
RDS(on)1
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
--40
V
VDS=--40V, VGS=0V
VGS=±16V, VDS=0V
--1.2
--2.6
V
VDS=--10V, ID=--1.5A
2.7
S
ID=--1.5A, VGS=--10V
ID=--0.75A, VGS=--4.5V
125
163
mΩ
190
266
mΩ
ID=--0.75A, VGS=--4V
VDS=--20V, f=1MHz
215
301
mΩ
198
pF
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
8.1
pF
Turn-ON Delay Time
See specified Test Circuit.
5.8
ns
Rise Time
td(on)
tr
See specified Test Circuit.
10.3
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
27.6
ns
Fall Time
tf
See specified Test Circuit.
17.3
ns
Total Gate Charge
Qg
VDS=--20V, VGS=--10V, ID=--2.5A
5.9
nC
Gate-to-Source Charge
Qgs
0.84
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--20V, VGS=--10V, ID=--2.5A
VDS=--20V, VGS=--10V, ID=--2.5A
Diode Forward Voltage
VSD
IS=--2.5A, VGS=0V
1.3
--0.87
nC
--1.2
V
No. A1892-2/6
ECH8673
Switching Time Test Circuit
[N-channel]
10V
0V
[P-channel]
VDD=20V
VIN
0V
--10V
ID=2A
RL=10Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --20V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
[Nch]
V
V
50Ω
S
ID -- VGS
7.0
[Nch]
VDS=10V
6.5
4.0
4.5
10.0V
6.0V
16.0V
3.0
ECH8673
P.G
S
ID -- VDS
3.5
VOUT
G
ECH8673
P.G
ID= --1.5A
RL=13Ω
VIN
6.0
3.5V
1.5
1.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VGS=3.0V
0.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
250
0.9
0
1.0
[Nch]
2A
150
100
50
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT16158
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on) -- Ta
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=1A
0.5
Gate-to-Source Voltage, VGS -- V
IT16156
Ta=25°C
200
0
25°
C --25°C
2.0
5.0
Ta=
75°
C
Drain Current, ID -- A
Drain Current, ID -- A
5.5
2.5
4.5
5.0
IT16157
[Nch]
200
1A
, I D=
=4.0V
VGS
1A
, I D=
4.5V
=
VGS
=2A
V, I D
=10.0
VGS
150
100
50
0
--60
--40 --20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16159
No. A1892-3/6
ECH8673
7
5
3
2
5°C
--2
=
C
Ta
75°
1.0
7
5
°C
25
3
[Nch]
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
100
0.01
5 7 10
IT16160
Drain Current, ID -- A
5
0
0.2
0.4
0.6
Ciss, Coss, Crss -- pF
td(off)
2
tf
10
7
td(on)
tr
5
3
1.0
1.2
Ciss, Coss, Crss -- VDS
1000
7
5
1.4
IT16161
[Nch]
f=1MHz
3
3
0.8
Diode Forward Voltage, VSD -- V
[Nch]
VDD=20V
VGS=10V
7
Switching Time, SW Time -- ns
IS -- VSD
10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
VDS=10V
Ta=7
5°C
25°C
--25°C
| yfs | -- ID
10
Ciss
2
100
7
5
Coss
3
2
Crss
10
7
5
3
2
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
[Nch]
Drain Current, ID -- A
7
6
5
4
3
2
1
2
3
4
5
.0V
--4
V
5V
--4
.
--6.
0
0V --10.
0V
[Pch]
ID=3.5A
DC
op
era
7
5
3
2
--1.0
--5.0
40
IT16163
[Nch]
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm) 1unit
2
3
5 7 1.0
2
3
5 7 10
2
3
ID -- VGS
5 7 100
IT16165
[Pch]
VDS= --10V
--3.5
--3.0
--2.5
--2.0
--1.5
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT16166
Ta=
7
--0.5
0
25°
VGS= --2.5V
--0.2
35
10
0μ
1m s
s
10
10 ms
0m
s
--1.0
--0.5
--0.1
30
--4.0
--3.0V
0
25
tio
n(
Ta
Operation in this
=2
5°C
area is limited by RDS(on).
)
0.1
7
5
3
2
--4.5
--1.5
0
20
Drain-to-Source Voltage, VDS -- V
5V
--3.
--16.
Drain Current, ID -- A
--2.0
10
7
5
3
2
1.0
IT16164
ID -- VDS
15
IDP=30A (PW≤10μs)
0.01
0.1
6
Total Gate Charge, Qg -- nC
--2.5
10
--25
°C
1
Drain Current, ID -- A
0
5
ASO
100
7
5
3
2
8
0
0
Drain-to-Source Voltage, VDS -- V
VDS=20V
ID=3.5A
9
Gate-to-Source Voltage, VGS -- V
10
IT16162
VGS -- Qg
10
1.0
7
C
2
5°C
1.0
0.1
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
IT16167
No. A1892-4/6
ECH8673
RDS(on) -- VGS
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --0.75A
350
--1.5A
300
250
200
150
100
50
0
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
2
5°C
--2
=
C
Ta
75°
1.0
7
°C
25
5
3
250
= -VGS
200
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
SW Time -- ID
100
50
--40 --20
0
5
20
40
2
tf
10
tr
7
td(on)
5
3
100
120
140
160
IT16169
[Pch]
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Ciss, Coss, Crss -- VDS
1000
7
5
--1.4
IT16171
[Pch]
f=1MHz
Ciss
2
Ciss, Coss, Crss -- pF
3
80
IS -- VSD
3
td(off)
60
Diode Forward Voltage, VSD -- V
[Pch]
VDD= --20V
VGS= --10V
7
.5A
= --1
V, I D
0.0
= --1
VGS
100
--0.01
5 7 --10
IT16170
Drain Current, ID -- A
A
0.75
= -V, I D
--4.5
=
VGS
150
3
2
2
0.1
--0.01
Switching Time, SW Time -- ns
= -, ID
4.0V
--10
7
5
5
3
A
0.75
300
Ambient Temperature, Ta -- °C
[Pch]
VDS= --10V
7
350
IT16168
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
10
400
0
--60
--16
[Pch]
C
25°C
--25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
RDS(on) -- Ta
450
Ta=25°C
Ta=75
°
450
100
7
5
Coss
3
2
10
7
5
Crss
3
2
2
1.0
--0.1
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
--5
0
--10
6
7
IT16174
--15
--20
--25
--30
--35
Drain-to-Source Voltage, VDS -- V
VDS= --20V
ID= --2.5A
--9
Gate-to-Source Voltage, VGS -- V
1.0
--10
IT16172
VGS -- Qg
--10
7
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
--40
IT16173
[Pch]
IDP= --30A (PW≤10μs)
10
0μ
1m s
s
10
m
s
10
0m
s
ID= --2.5A
DC
op
era
Operation in this
area is limited by RDS(on).
tio
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16175
No. A1892-5/6
ECH8673
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
(1200mm2×0.8mm)
Allowable Power Dissipation, PD -- W
1.8
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16176
Note on usage : Since the ECH8673 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1892-6/6