TOSHIBA 2SD2655

2SD2655
Silicon NPN Epitaxial Planer
Low Frequency Power Amplifier
ADE-208-1388A (Z)
Rev.1
Jun. 2001
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: IC = 1 A
• Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)
• High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
Outline
MPAK
3
1
2
Note:
Marking is “WM-“.
1. Emitter
2. Base
3. Collector
2SD2655
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
1
A
Collector peak current
ic(peak)
2
A
Collector power dissipation
PC
800*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note:
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25 °C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to base breakdown
voltage
V(BR)CBO
60


V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
50


V
IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
6


V
IE = 10 µA, IC = 0
Collector cutoff current
ICBO


100
nA
VCB = 50 V, IE = 0
Emitter cutoff current
IEBO


100
nA
VEB = 5 V, IC = 0
DC current transfer ratio
hFE
200

500

VCE = 2 V, IC = 0.1 A
Collector to emitter saturation
voltage
VCE(sat)

0.16
0.3
V
IC = 0.5 A, IB = 0.05 A,
Pulse test
Base to emitter saturation
voltage
VBE(sat)

0.91
1.2
V
IC = 0.5 A, IB = 0.05 A,
Pulse test
Gain bandwidth product
fT

280

MHz
VCE = 2 V, IC = 0.1 A
Collector output capacitance
Cob

4.2

pF
VCB = 10 V, IE = 0,
f = 1 MHz
Rev.1, Jun. 2001, page 2 of 6
2SD2655
Typical Output Characteristics (1)
200
1200
When using alumina ceramic board
S = 25 mm x 60 mm, t = 0.7 mm
Pulse
50 µA
IB = 3
IC (mA)
1000
800
Collector Current
Collector Power Dissipation
Pc (mW)
Maximum Collector Dissipation Curve
400
200
0
50
100
150
Ambient Temperature
250 µA
100
200 µA
150 µA
100 µA
50 µA
0
200
Ta
300 µA
(°C)
2
Typical Output Characteristics (2)
5mA
6mA
10
V CE = 2V
Pulse
2mA
300
IB = 1mA
200
100
Pulse
0.4
8
VCE (V)
Typical transfer Characteristics
3mA
4mA
400
0
6
1000
Collector Current IC (mA)
Collector Current
Ic (mA)
500
4
Collector to Emitter Voltage
0.8
1.2
Collector to Emitter Voltage
1.6
100
10
1
2.0
VCE (V)
0
0.2
0.4
0.6
Base to Emitter Voltage
0.8
1.0
VBE (V)
Rev.1, Jun. 2001, page 3 of 6
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio
hFE
1000
100
10
VCE = 2V
Pulse
1
Collector to Emitter Saturation Voltage VCE(sat) (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
2SD2655
Saturation Voltage vs.
Collector Current
1
VBE(sat)
0.1
VCE(sat)
0.01
IC/IB = 10
Pulse
0.001
1
10
100
1000
1
Collector Current IC (mA)
100
1000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
1000
500
fT (MHz)
f = 1MHz
IE = 0
100
Gain Bandwidth Product
Collector Output Capacitance Cob (pF)
10
10
1
0.1
1
10
Collector to Base Voltage
Rev.1, Jun. 2001, page 4 of 6
100
VCB
(V)
VCE = 2V
Pulse
400
300
200
100
0
1
10
Collector Current
100
IC (mA)
1000
2SD2655
Package Dimensions
As of January, 2001
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK
—
Conforms
0.011 g
Rev.1, Jun. 2001, page 5 of 6
2SD2655
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.1, Jun. 2001, page 6 of 6