Ordering number : ENN7183 CPH6605 N-Channel and P-Channel Silicon MOSFETs CPH6605 Load Switching Applications • [CPH6605] 5 6 0.2 0.15 2.9 4 0.05 0.6 • Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used for driving the P-channel MOSFET. Optimal for load switch use. Excellent ON-resistance characteristic. 2.5V drive. 0.6 • Package Dimensions 2.8 • 1.6 Features 3 0.95 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --20 V Gate-to-Source Voltage VGSS ID ±10 ±10 V 0.65 --1.5 A 2.6 --6.0 Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance yfs RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 30 VGS=±8V, VDS=0 VDS=10V, ID=100µA 0.4 VDS=10V, ID=150mA 400 ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V Marking : FQ V 10 µA ±10 µA 1.3 560 V mS 0.9 1.2 Ω 1.2 1.7 Ω 2.6 5.2 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.7183-1/6 83002 TS IM TA-100118 CPH6605 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 30 Output Capacitance 15 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 10 pF Turn-ON Delay Time See specified Test Circuit. 32 ns Rise Time td(on) tr See specified Test Circuit. 110 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 250 ns tf Qg See specified Test Circuit. 160 ns VDS=10V, VGS=10V, ID=300mA 2.34 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 Diode Forward Voltage VSD IS=300mA, VGS=0 V(BR)DSS ID=--1mA, VGS=0 Fall Time Total Gate Charge 0.8 nC 1.2 V --1 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current --20 V VDS=--20V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=--1mA ±10 µA --1.3 V 180 235 mΩ 240 340 mΩ Cutoff Voltage VGS(off) Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--800mA ID=--800mA, VGS=--4V RDS(on)2 Ciss 290 pF 40 pF Static Drain-to-Source On-State Resistance --0.4 1.6 2.3 S Output Capacitance Coss ID=--400mA, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF Turn-ON Delay Time See specified Test Circuit. 10 ns Rise Time td(on) tr See specified Test Circuit. 35 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 32 ns tf Qg See specified Test Circuit. 27 ns VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1.5A 0.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1.5A 0.6 Diode Forward Voltage VSD IS=--1.5A, VGS=0 Input Capacitance Fall Time Total Gate Charge --0.82 nC --1.2 V Electrical Connection 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --10V VIN 4V 0V 0V --4V ID=150mA RL=100Ω VOUT VIN D PW=10µs D.C.≤1% ID= --800mA RL=12.5Ω VOUT VIN D PW=10µs D.C.≤1% G G CPH6605 P.G 50Ω S CPH6605 P.G 50Ω S No.7183-2/6 CPH6605 ID -- VDS --1.6 Drain Current, ID -- A 2 .0 V 0.20 --6.0 V -4.0V 2.5 V --1.8 6.0V Drain Current, ID -- A --2.0 3.0V 3.5V 4.0V 0.25 ID -- VDS [Nch] 0.15 VGS=1.5V 0.10 --1.4 [Pch] --3. 0 --2 V .5V --2 .0V 0.30 --1.2 VGS= --1.5V --1.0 --0.8 --0.6 --0.4 0.05 --0.2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V ID -- VGS 0.6 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V [Pch] VDS= --10V --1.2 --1.0 --25 25 °C 25 --2 °C 5°C --0.6 25° C --0.8 --0.2 0 1.5 2.5 2.0 Gate-to-Source Voltage, VGS -- V IT00225 RDS(on) -- VGS [Nch] 3.0 --1.4 --0.4 5° C Ta = 1.0 --1.0 IT02654 ID -- VGS C 75° °C 25°C Ta= -75 °C 0.2 0.5 --0.9 --1.6 0.3 0 0 2.0 1.5 ID=150mA 80mA 1.0 0.5 --1.0 --1.5 --2.0 --2.5 IT02655 RDS(on) -- VGS 600 [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2.5 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.2 --1.8 0.4 0.1 0 500 400 300 ID= --0.4A 200 --0.8A 100 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 9 2.5V = A, VGS m 0 8 I D= 4.0V V S= 0mA, G 5 1 = ID --40 --20 0 20 40 60 --3 80 100 Ambient Temperature, Ta -- °C 120 140 IT00230 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 500 0.5 0 --60 --2 [Nch] 2.0 1.0 --1 IT00226 2.5 1.5 0 10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.1 IT00224 --2.0 0.5 0 0 0 1.0 [Nch] VDS=10V Drain Current, ID -- A 0.9 Ta= 7 0.1 Drain Current, ID -- A 0 --9 --10 IT02656 [Pch] 400 .5V = --2 VGS , A --0.4 --4.0V I D= S= V G , A 0.8 I D= -- 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02657 No.7183-3/6 CPH6605 5 3 2 1.0 7 --25 Ta= 5 3 °C 75° C 25° C 2 0.1 0.01 2 3 5 7 2 0.1 3 5 IF -- VSD 1.0 5 3 2 7 5 2 0.1 --0.01 7 5 3 3 5 7 --0.1 2 0.6 0.8 1.0 1.2 SW Time -- ID 1000 7 5 td(off) 3 2 tf tr 100 7 5 td(on) 3 2 10 0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 SW Time -- ID 100 --1.4 IT02659 [Pch] VDD= --10V VGS= --4V 7 td(off) 5 3 tf 2 tr td(on) 10 7 5 3 2 3 5 7 2 0.1 3 Drain Current, ID -- A 3 5 5 7 --0.1 7 2 3 5 7 --1.0 2 Drain Current, ID -- A IT00233 Ciss, Coss, Crss -- VDS 100 [Nch] f=1MHz 3 5 IT02660 Ciss, Coss, Crss -- VDS 1000 7 [Pch] f=1MHz 5 5 Ciss 3 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 [Pch] Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns Switching Time, SW Time -- ns 1.4 IT00232 [Nch] VDD=15V VGS=4V 2 IT02658 VGS=0 --0.1 7 5 --0.01 0.4 7 --1.0 3 2 0.01 Diode Forward Voltage, VSD -- V 5 --1.0 7 5 3 0.2 3 3 2 2 0 2 IF -- VSD --10 7 5 Forward Current, IF -- A Ta=7 5°C 25°C --25°C Forward Current, IF -- A 0.1 2 Drain Current, ID -- A 5 2 °C 25 3 1.0 IT00231 3 5°C --2 = Ta °C 75 1.0 [Nch] VGS=0 7 VDS= --10V 7 7 Drain Current, ID -- A [Pch] °C 25°C --25°C VDS=10V 7 yfs -- ID 10 Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, |yfs| -- S [Nch] Ta=7 5 |yfs| -- ID 10 2 Coss 10 Crss 7 Ciss 3 2 100 7 5 Coss 3 3 Crss 2 2 5 10 1.0 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT00234 0 --5 --10 --15 Drain-to-Source Voltage, VDS -- V --20 IT02661 No.7183-4/6 CPH6605 VGS -- Qg 10 8 7 6 5 4 3 2 VGS -- Qg --4 Gate-to-Source Voltage, VGS -- V 9 Gate-to-Source Voltage, VGS -- V [Nch] VDS=10V ID=300mA [Pch] VDS= --10V ID= --1.5A --3 --2 --1 1 0 0 0 1.0 0.5 0 2.5 IT00235 ASO [Nch] IDP=2.6A 10 2 ms ID=0.65A 10 0m DC 3 2 s op era tio 0.1 7 5 Operation in this area is limited by RDS(on). n Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 0.8 1.5 2 2.5 3 5 3 ASO 3.5 IT02662 [Pch] <10µs 1m s IDP= --6.0A 10 ms ID= --1.5A 10 --1.0 7 5 DC 0m s op era tio Operation in this area is limited by RDS(on). 3 2 n --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT04067 PD -- Ta [Pch, Nch] 1.0 1 3 Drain Current, ID -- A 1.0 7 5 <10µs 1m s 0.5 Total Gate Charge, Qg -- nC --10 7 5 3 2 Drain Current, ID -- A 2.0 Total Gate Charge, Qg -- nC 10 7 5 Allowable Power Dissipation, PD -- W 1.5 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT04068 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT04069 No.7183-5/6 CPH6605 Note on usage : Since the CPH6605 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7183-6/6