SANYO CPH6605

Ordering number : ENN7183
CPH6605
N-Channel and P-Channel Silicon MOSFETs
CPH6605
Load Switching Applications
•
[CPH6605]
5
6
0.2
0.15
2.9
4
0.05
0.6
•
Dual chip device for high-density mounting.
unit : mm
One of the encapsulated devices is a P-channel MOSFET 2202
featuring low ON-resistance and high-speed switching.
The other is an N-channel small signal MOSFET used
for driving the P-channel MOSFET.
Optimal for load switch use.
Excellent ON-resistance characteristic.
2.5V drive.
0.6
•
Package Dimensions
2.8
•
1.6
Features
3
0.95
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.2
2
0.7
0.9
1
0.4
Specifications
SANYO : CPH6
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--20
V
Gate-to-Source Voltage
VGSS
ID
±10
±10
V
0.65
--1.5
A
2.6
--6.0
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
A
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
yfs
RDS(on)1
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
30
VGS=±8V, VDS=0
VDS=10V, ID=100µA
0.4
VDS=10V, ID=150mA
400
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
Marking : FQ
V
10
µA
±10
µA
1.3
560
V
mS
0.9
1.2
Ω
1.2
1.7
Ω
2.6
5.2
Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM No.7183-1/6
83002 TS IM TA-100118
CPH6605
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
30
Output Capacitance
15
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
10
pF
Turn-ON Delay Time
See specified Test Circuit.
32
ns
Rise Time
td(on)
tr
See specified Test Circuit.
110
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
250
ns
tf
Qg
See specified Test Circuit.
160
ns
VDS=10V, VGS=10V, ID=300mA
2.34
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=300mA
0.38
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=300mA
0.45
Diode Forward Voltage
VSD
IS=300mA, VGS=0
V(BR)DSS
ID=--1mA, VGS=0
Fall Time
Total Gate Charge
0.8
nC
1.2
V
--1
µA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
--20
V
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
±10
µA
--1.3
V
180
235
mΩ
240
340
mΩ
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
yfs
RDS(on)1
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4V
RDS(on)2
Ciss
290
pF
40
pF
Static Drain-to-Source On-State Resistance
--0.4
1.6
2.3
S
Output Capacitance
Coss
ID=--400mA, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
25
pF
Turn-ON Delay Time
See specified Test Circuit.
10
ns
Rise Time
td(on)
tr
See specified Test Circuit.
35
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
32
ns
tf
Qg
See specified Test Circuit.
27
ns
VDS=--10V, VGS=--4V, ID=--1.5A
3.2
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--1.5A
0.8
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--1.5A
0.6
Diode Forward Voltage
VSD
IS=--1.5A, VGS=0
Input Capacitance
Fall Time
Total Gate Charge
--0.82
nC
--1.2
V
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Top view
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
VDD= --10V
VIN
4V
0V
0V
--4V
ID=150mA
RL=100Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
ID= --800mA
RL=12.5Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
G
CPH6605
P.G
50Ω
S
CPH6605
P.G
50Ω
S
No.7183-2/6
CPH6605
ID -- VDS
--1.6
Drain Current, ID -- A
2 .0
V
0.20
--6.0
V -4.0V
2.5
V
--1.8
6.0V
Drain Current, ID -- A
--2.0
3.0V
3.5V
4.0V
0.25
ID -- VDS
[Nch]
0.15
VGS=1.5V
0.10
--1.4
[Pch]
--3.
0
--2 V
.5V
--2
.0V
0.30
--1.2
VGS= --1.5V
--1.0
--0.8
--0.6
--0.4
0.05
--0.2
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
ID -- VGS
0.6
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
[Pch]
VDS= --10V
--1.2
--1.0
--25
25
°C
25
--2
°C
5°C
--0.6
25°
C
--0.8
--0.2
0
1.5
2.5
2.0
Gate-to-Source Voltage, VGS -- V
IT00225
RDS(on) -- VGS
[Nch]
3.0
--1.4
--0.4
5°
C
Ta
=
1.0
--1.0
IT02654
ID -- VGS
C
75°
°C
25°C
Ta=
-75
°C
0.2
0.5
--0.9
--1.6
0.3
0
0
2.0
1.5
ID=150mA
80mA
1.0
0.5
--1.0
--1.5
--2.0
--2.5
IT02655
RDS(on) -- VGS
600
[Pch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2.5
--0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--0.2
--1.8
0.4
0.1
0
500
400
300
ID= --0.4A
200
--0.8A
100
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
9
2.5V
=
A, VGS
m
0
8
I D=
4.0V
V S=
0mA, G
5
1
=
ID
--40
--20
0
20
40
60
--3
80
100
Ambient Temperature, Ta -- °C
120
140
IT00230
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
500
0.5
0
--60
--2
[Nch]
2.0
1.0
--1
IT00226
2.5
1.5
0
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
3.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--0.1
IT00224
--2.0
0.5
0
0
0
1.0
[Nch]
VDS=10V
Drain Current, ID -- A
0.9
Ta=
7
0.1
Drain Current, ID -- A
0
--9
--10
IT02656
[Pch]
400
.5V
= --2
VGS
,
A
--0.4
--4.0V
I D=
S=
V
G
,
A
0.8
I D= --
300
200
100
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT02657
No.7183-3/6
CPH6605
5
3
2
1.0
7
--25
Ta=
5
3
°C
75°
C
25°
C
2
0.1
0.01
2
3
5
7
2
0.1
3
5
IF -- VSD
1.0
5
3
2
7
5
2
0.1
--0.01
7
5
3
3
5
7 --0.1
2
0.6
0.8
1.0
1.2
SW Time -- ID
1000
7
5
td(off)
3
2
tf
tr
100
7
5
td(on)
3
2
10
0.01
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
SW Time -- ID
100
--1.4
IT02659
[Pch]
VDD= --10V
VGS= --4V
7
td(off)
5
3
tf
2
tr
td(on)
10
7
5
3
2
3
5
7
2
0.1
3
Drain Current, ID -- A
3
5
5
7
--0.1
7
2
3
5
7 --1.0
2
Drain Current, ID -- A
IT00233
Ciss, Coss, Crss -- VDS
100
[Nch]
f=1MHz
3
5
IT02660
Ciss, Coss, Crss -- VDS
1000
7
[Pch]
f=1MHz
5
5
Ciss
3
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
3
[Pch]
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
Switching Time, SW Time -- ns
1.4
IT00232
[Nch]
VDD=15V
VGS=4V
2
IT02658
VGS=0
--0.1
7
5
--0.01
0.4
7 --1.0
3
2
0.01
Diode Forward Voltage, VSD -- V
5
--1.0
7
5
3
0.2
3
3
2
2
0
2
IF -- VSD
--10
7
5
Forward Current, IF -- A
Ta=7
5°C
25°C
--25°C
Forward Current, IF -- A
0.1
2
Drain Current, ID -- A
5
2
°C
25
3
1.0
IT00231
3
5°C
--2
=
Ta
°C
75
1.0
[Nch]
VGS=0
7
VDS= --10V
7
7
Drain Current, ID -- A
[Pch]
°C
25°C
--25°C
VDS=10V
7
yfs -- ID
10
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, |yfs| -- S
[Nch]
Ta=7
5
|yfs| -- ID
10
2
Coss
10
Crss
7
Ciss
3
2
100
7
5
Coss
3
3
Crss
2
2
5
10
1.0
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT00234
0
--5
--10
--15
Drain-to-Source Voltage, VDS -- V
--20
IT02661
No.7183-4/6
CPH6605
VGS -- Qg
10
8
7
6
5
4
3
2
VGS -- Qg
--4
Gate-to-Source Voltage, VGS -- V
9
Gate-to-Source Voltage, VGS -- V
[Nch]
VDS=10V
ID=300mA
[Pch]
VDS= --10V
ID= --1.5A
--3
--2
--1
1
0
0
0
1.0
0.5
0
2.5
IT00235
ASO
[Nch]
IDP=2.6A
10
2
ms
ID=0.65A
10
0m
DC
3
2
s
op
era
tio
0.1
7
5
Operation in this
area is limited by RDS(on).
n
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
3
2
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
0.8
1.5
2
2.5
3
5
3
ASO
3.5
IT02662
[Pch]
<10µs
1m
s
IDP= --6.0A
10
ms
ID= --1.5A
10
--1.0
7
5
DC
0m
s
op
era
tio
Operation in this
area is limited by RDS(on).
3
2
n
--0.1
7
5
3
2
Drain-to-Source Voltage, VDS -- V
IT04067
PD -- Ta
[Pch, Nch]
1.0
1
3
Drain Current, ID -- A
1.0
7
5
<10µs
1m
s
0.5
Total Gate Charge, Qg -- nC
--10
7
5
3
2
Drain Current, ID -- A
2.0
Total Gate Charge, Qg -- nC
10
7
5
Allowable Power Dissipation, PD -- W
1.5
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT04068
M
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Amibient Tamperature, Ta -- °C
140
160
IT04069
No.7183-5/6
CPH6605
Note on usage : Since the CPH6605 is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject
to change without notice.
PS No.7183-6/6