SANYO MCH6615

Ordering number : ENN6796
MCH6615
N-Channel and P-Channel Silicon MOSFETs
MCH6615
Ultrahigh-Speed Switching Applications
•
•
The MCH6615 incorporates two elements in the same
package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs,
thereby enabling high-density mounting.
Low ON-resistance.
2.5V drive.
unit : mm
2173
[MCH6615]
0.3
6
5
0.15
4
2 3
0.65
0.25
1
2.1
1.6
•
Package Dimensions
0.25
Features
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.15
0.85
2.0
SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
ID
±10
±10
V
0.65
--0.4
A
2.6
--1.6
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0
VDS=30V, VGS=0
30
V
VGS=±8V, VDS=0
Cutoff Voltage
VGS(off)
VDS=10V, ID=100µA
0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=150mA
400
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
10
µA
±10
µA
1.3
560
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
Marking : FP
V
mS
0.9
1.2
Ω
1.2
1.7
Ω
2.6
5.2
Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM No.6796-1/6
20101 TS IM TA-2910
MCH6615
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
30
Output Capacitance
15
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
10
pF
Turn-ON Delay Time
See specified Test Circuit
32
ns
Rise Time
td(on)
tr
See specified Test Circuit
110
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
250
ns
Fall Time
tf
Qg
Total Gate Charge
See specified Test Circuit
160
ns
VDS=10V, VGS=10V, ID=300mA
2.34
nC
0.38
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
Diode Forward Voltage
VSD
IS=300mA, VGS=0
V(BR)DSS
IDSS
ID=--1mA, VGS=0
IGSS
VGS(off)
VGS=±8V, VDS=0
0.45
0.8
nC
1.2
V
--10
µA
±10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
yfs
RDS(on)1
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
--30
V
VDS=--30V, VGS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--100mA
--0.4
--1.4
210
300
V
mS
ID=--100mA, VGS=--4V
ID=--50mA, VGS=--2.5V
2.4
3.1
Ω
3.5
4.9
Ω
ID=--10mA, VGS=--1.5V
10
20
Ω
Input Capacitance
Ciss
VDS=--10V, f=1MHz
28
pF
Output Capacitance
Coss
pF
Crss
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
15
Reverse Transfer Capacitance
5.2
pF
Turn-ON Delay Time
See specified Test Circuit
24
ns
Rise Time
td(on)
tr
See specified Test Circuit
75
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
200
ns
See specified Test Circuit
Fall Time
tf
Qg
150
ns
VDS=--10V, VGS=--10V, ID=--200mA
2
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--200mA
0.25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--200mA
0.35
Diode Forward Voltage
VSD
IS=--200mA, VGS=0
Total Gate Charge
Switching Time Test Circuit
[N-channel]
4V
0V
--0.82
ID=150mA
RL=100Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
0V
--4V
VDD= --15V
VIN
ID= --100mA
RL=150Ω
VIN
PW=10µs
D.C.≤1%
G
D
VOUT
G
MCH6615
P.G
V
[P-channel]
VDD=15V
VIN
nC
--1.2
MCH6615
P.G
50Ω
S
50Ω
S
Electrical Connection
D1
G2
S2
(Top view)
S1
G1
D2
No.6796-2/6
MCH6615
--0.16
0.15
VGS=1.5V
0.10
[Pch]
--3.5V
0V
--0.14
--2
.5
V
--6.
Drain Current, ID -- A
2.0
V
0.20
0V
--4
.
2.5
V
--0.18
6.0V
Drain Current, ID -- A
--0.20
3.0V
3.5V
4.0V
0.25
ID -- VDS
[Nch]
--3
.0
V
ID -- VDS
0.30
--0.12
0V
.
--2
--0.10
--0.08
--0.06
VGS= --1.5V
--0.04
0.05
--0.02
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
[Pch]
VDS= --10V
--0.30
25
0.4
0.3
0.2
--0.25
25°C
C
75°
--0.35
--1.0
IT00237
ID -- VGS
--0.40
°C
25°C
Ta=
--
0.5
--0.9
Drain-to-Source Voltage, VDS -- V
[Nch]
VDS=10V
Drain Current, ID -- A
0
IT00224
ID -- VGS
0.6
1.0
Ta=
--25°
C
75°
C
0.1
Drain Current, ID -- A
0
--0.20
--0.15
--0.10
0.1
--0.05
0
0
0
0.5
1.0
1.5
Gate-to-Source Voltage, VGS -- V
2.5
2.0
1.5
ID=150mA
80mA
1.0
0.5
--1.5
--2.0
--2.5
--3.0
8
--3.5
IT00238
RDS(on) -- VGS
[Nch]
[Pch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
7
6
5
ID= --100mA
4
--50mA
3
2
1
0
0
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
10
10
3
2
Ta=75°C
1.0
--25°C
5
25°C
3
2
0.1
0.01
2
3
5
7
0.1
2
Drain Current, ID -- A
3
--1
--2
5
7
1.0
IT00227
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
IT00239
RDS(on) -- ID
[Pch]
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
7
0
IT00226
[Nch]
VGS=4V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--0.5
IT00225
RDS(on) -- VGS
3.0
0
2.5
2.0
VGS= --4V
7
5
Ta=75°C
3
25°C
2
1.0
--0.01
--25°C
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
5
IT00240
No.6796-3/6
MCH6615
RDS(on) -- ID
10
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
3
2
Ta=75°C
1.0
--25°C
7
25°C
5
3
2
0.1
0.01
2
3
5
7
2
0.1
3
5
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
2
0.01
IT00229
RDS(on) -- Ta
[Nch]
2.5
2.0
V
=2.5
VGS
,
A
0m
I D=8
4.0V
V S=
0mA, G
5
1
=
ID
1.5
1.0
0.5
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
5
3
2
1.0
Ta=
5
3
°C
--25
75°
C
25°
C
2
2
3
5
7
0.1
2
Drain Current, ID -- A
3
5
7
7
2
--0.1
1.0
IT00231
3
5
IT00241
[Pch]
VGS= --1.5V
5
3
2
Ta=75°C
10
--25°C
25°C
7
5
3
2
2
3
5
7
2
--0.01
3
IT00242
RDS(on) -- Ta
7
[Pch]
6
5
.5V
--2
S=
A, V G
4
0m
--5
ID=
3
.0V
--4
S=
, VG
0mA
0
--1
I D=
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
[Nch]
7
5
Drain Current, ID -- A
140
VDS=10V
7
3
RDS(on) -- ID
IT00230
|yfs| -- ID
10
2
1.0
--0.001
3
Drain Current, ID -- A
3.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
2
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--25°C
25°C
3
--25°C
3
7
Ta=75°C
2
Ta=75°C
25°C
Drain Current, ID -- A
[Nch]
5
2
5
IT00228
7
3
7
1.0
--0.01
1.0
VGS=1.5V
1.0
0.001
Forward Transfer Admittance, |yfs| -- S
7
RDS(on) -- ID
10
0.1
0.01
[Pch]
VGS= --2.5V
yfs -- ID
1.0
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
0
--60
RDS(on) -- ID
10
VGS=2.5V
7
160
IT00243
[Pch]
VDS= --10V
5
25°C
3
-Ta=
2
75°C
C
25°
0.1
7
5
3
2
0.01
--0.01
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
5
IT00244
No.6796-4/6
MCH6615
IF -- VSD
1.0
[Nch]
VGS=0
7
7
5
3
--0.1
7
5
3
2
--0.01
--0.4
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
1.4
td(off)
3
2
tf
tr
100
7
5
td(on)
3
2
10
0.01
2
3
5
7
2
0.1
3
Drain Current, ID -- A
7
--0.7
--0.8
--0.9
--1.0
[Pch]
VDD= --15V
VGS= --4V
7
5
3
td(off)
2
tf
100
tr
7
5
td(on)
3
2
10
--0.01
5
IT00245
SW Time -- ID
2
3
5
7
2
--0.1
Drain Current, ID -- A
IT00233
Ciss, Coss, Crss -- VDS
100
--0.6
1000
Switching Time, SW Time -- ns
5
--0.5
Diode Forward Voltage, VSD -- V
IT00232
[Nch]
VDD=15V
VGS=4V
7
Switching Time, SW Time -- ns
2
--25°
C
0.1
3
25°C
2
Ta=
75°
C
Forward Current, IF -- A
3
Ta=7
5°C
25°C
--25°C
Forward Current, IF -- A
5
2
[Nch]
f=1MHz
3
IT00246
Ciss, Coss, Crss -- VDS
100
[Pch]
f=1MHz
7
5
5
Ciss
3
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
[Pch]
VGS=0
7
5
2
Coss
10
Crss
7
5
Ciss
3
2
Coss
10
7
Crss
5
3
3
2
2
1.0
1.0
0
10
5
10
15
20
25
0
30
Drain-to-Source Voltage, VDS -- V
IT00234
VGS -- Qg
[Nch]
Gate-to-Source Voltage, VGS -- V
7
6
5
4
3
2
--10
--15
--20
--25
VGS -- Qg
--30
IT00247
[Pch]
VDS= --10V
ID= --200mA
--9
8
--5
Drain-to-Source Voltage, VDS -- V
--10
VDS=10V
ID=300mA
9
Gate-to-Source Voltage, VGS -- V
IF -- VSD
--1.0
--8
--7
--6
--5
--4
--3
--2
--1
1
0
0
0
0.5
1.0
1.5
Total Gate Charge, Qg -- nC
2.0
2.5
IT00235
0
0.5
1.0
1.5
Total Gate Charge, Qg -- nC
2.0
2.5
IT00248
No.6796-5/6
MCH6615
ASO
5
3
IDP=2.6A
3
<10µs
2
2
1m
ms
10
0m
s
op
era
2
tio
Operation in
this area is
limited by RDS(on).
0.1
7
5
Drain Current, ID -- A
Drain Current, ID -- A
DC
3
3
n
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
0.8
5
<10µs
1m
s
3
5
10
ms
ID= --0.4A
3
2
--0.1
7
10
Operation in
this area is
limited by RDS(on).
DC
0m
s
ope
rat
ion
5
2
IT02520
Drain-to-Source Voltage, VDS -- V
[Pch, Nch]
PD -- Ta
1.0
IDP= --1.6A
7
3
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
2
Allowable Power Dissipation, PD -- W
10
ID=0.65A
[Pch]
--1.0
s
1.0
7
5
ASO
[Nch]
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--0.01
--1.0
2
3
5
7
--10
2
3
Drain-to-Source Voltage, VDS -- V
5
IT02519
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
(90
0.4
0m
m2
✕0
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
Amibient Tamperature, Ta -- °C
140
160
IT02521
Note on usage : Since the MCH6615 is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.
PS No.6796-6/6