Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Low ON-resistance. 2.5V drive. unit : mm 2173 [MCH6615] 0.3 6 5 0.15 4 2 3 0.65 0.25 1 2.1 1.6 • Package Dimensions 0.25 Features 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.15 0.85 2.0 SANYO : MCPH6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ID ±10 ±10 V 0.65 --0.4 A 2.6 --1.6 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Mounted on a ceramic board (900mm2✕0.8mm)1unit Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VDS=30V, VGS=0 30 V VGS=±8V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=150mA 400 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 10 µA ±10 µA 1.3 560 ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V Marking : FP V mS 0.9 1.2 Ω 1.2 1.7 Ω 2.6 5.2 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.6796-1/6 20101 TS IM TA-2910 MCH6615 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 30 Output Capacitance 15 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 10 pF Turn-ON Delay Time See specified Test Circuit 32 ns Rise Time td(on) tr See specified Test Circuit 110 ns Turn-OFF Delay Time td(off) See specified Test Circuit 250 ns Fall Time tf Qg Total Gate Charge See specified Test Circuit 160 ns VDS=10V, VGS=10V, ID=300mA 2.34 nC 0.38 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA Diode Forward Voltage VSD IS=300mA, VGS=0 V(BR)DSS IDSS ID=--1mA, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 0.45 0.8 nC 1.2 V --10 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance yfs RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 --30 V VDS=--30V, VGS=0 VDS=--10V, ID=--100µA VDS=--10V, ID=--100mA --0.4 --1.4 210 300 V mS ID=--100mA, VGS=--4V ID=--50mA, VGS=--2.5V 2.4 3.1 Ω 3.5 4.9 Ω ID=--10mA, VGS=--1.5V 10 20 Ω Input Capacitance Ciss VDS=--10V, f=1MHz 28 pF Output Capacitance Coss pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 15 Reverse Transfer Capacitance 5.2 pF Turn-ON Delay Time See specified Test Circuit 24 ns Rise Time td(on) tr See specified Test Circuit 75 ns Turn-OFF Delay Time td(off) See specified Test Circuit 200 ns See specified Test Circuit Fall Time tf Qg 150 ns VDS=--10V, VGS=--10V, ID=--200mA 2 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--200mA 0.25 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--200mA 0.35 Diode Forward Voltage VSD IS=--200mA, VGS=0 Total Gate Charge Switching Time Test Circuit [N-channel] 4V 0V --0.82 ID=150mA RL=100Ω VIN PW=10µs D.C.≤1% D VOUT 0V --4V VDD= --15V VIN ID= --100mA RL=150Ω VIN PW=10µs D.C.≤1% G D VOUT G MCH6615 P.G V [P-channel] VDD=15V VIN nC --1.2 MCH6615 P.G 50Ω S 50Ω S Electrical Connection D1 G2 S2 (Top view) S1 G1 D2 No.6796-2/6 MCH6615 --0.16 0.15 VGS=1.5V 0.10 [Pch] --3.5V 0V --0.14 --2 .5 V --6. Drain Current, ID -- A 2.0 V 0.20 0V --4 . 2.5 V --0.18 6.0V Drain Current, ID -- A --0.20 3.0V 3.5V 4.0V 0.25 ID -- VDS [Nch] --3 .0 V ID -- VDS 0.30 --0.12 0V . --2 --0.10 --0.08 --0.06 VGS= --1.5V --0.04 0.05 --0.02 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 [Pch] VDS= --10V --0.30 25 0.4 0.3 0.2 --0.25 25°C C 75° --0.35 --1.0 IT00237 ID -- VGS --0.40 °C 25°C Ta= -- 0.5 --0.9 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V Drain Current, ID -- A 0 IT00224 ID -- VGS 0.6 1.0 Ta= --25° C 75° C 0.1 Drain Current, ID -- A 0 --0.20 --0.15 --0.10 0.1 --0.05 0 0 0 0.5 1.0 1.5 Gate-to-Source Voltage, VGS -- V 2.5 2.0 1.5 ID=150mA 80mA 1.0 0.5 --1.5 --2.0 --2.5 --3.0 8 --3.5 IT00238 RDS(on) -- VGS [Nch] [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 7 6 5 ID= --100mA 4 --50mA 3 2 1 0 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V RDS(on) -- ID 10 10 3 2 Ta=75°C 1.0 --25°C 5 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 --1 --2 5 7 1.0 IT00227 --3 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS -- V IT00239 RDS(on) -- ID [Pch] 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 7 0 IT00226 [Nch] VGS=4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.5 IT00225 RDS(on) -- VGS 3.0 0 2.5 2.0 VGS= --4V 7 5 Ta=75°C 3 25°C 2 1.0 --0.01 --25°C 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 5 IT00240 No.6796-3/6 MCH6615 RDS(on) -- ID 10 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 Ta=75°C 1.0 --25°C 7 25°C 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 2 0.01 IT00229 RDS(on) -- Ta [Nch] 2.5 2.0 V =2.5 VGS , A 0m I D=8 4.0V V S= 0mA, G 5 1 = ID 1.5 1.0 0.5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 5 3 2 1.0 Ta= 5 3 °C --25 75° C 25° C 2 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 7 2 --0.1 1.0 IT00231 3 5 IT00241 [Pch] VGS= --1.5V 5 3 2 Ta=75°C 10 --25°C 25°C 7 5 3 2 2 3 5 7 2 --0.01 3 IT00242 RDS(on) -- Ta 7 [Pch] 6 5 .5V --2 S= A, V G 4 0m --5 ID= 3 .0V --4 S= , VG 0mA 0 --1 I D= 2 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C [Nch] 7 5 Drain Current, ID -- A 140 VDS=10V 7 3 RDS(on) -- ID IT00230 |yfs| -- ID 10 2 1.0 --0.001 3 Drain Current, ID -- A 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 2 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --25°C 25°C 3 --25°C 3 7 Ta=75°C 2 Ta=75°C 25°C Drain Current, ID -- A [Nch] 5 2 5 IT00228 7 3 7 1.0 --0.01 1.0 VGS=1.5V 1.0 0.001 Forward Transfer Admittance, |yfs| -- S 7 RDS(on) -- ID 10 0.1 0.01 [Pch] VGS= --2.5V yfs -- ID 1.0 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 0 --60 RDS(on) -- ID 10 VGS=2.5V 7 160 IT00243 [Pch] VDS= --10V 5 25°C 3 -Ta= 2 75°C C 25° 0.1 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 5 IT00244 No.6796-4/6 MCH6615 IF -- VSD 1.0 [Nch] VGS=0 7 7 5 3 --0.1 7 5 3 2 --0.01 --0.4 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 1.4 td(off) 3 2 tf tr 100 7 5 td(on) 3 2 10 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A 7 --0.7 --0.8 --0.9 --1.0 [Pch] VDD= --15V VGS= --4V 7 5 3 td(off) 2 tf 100 tr 7 5 td(on) 3 2 10 --0.01 5 IT00245 SW Time -- ID 2 3 5 7 2 --0.1 Drain Current, ID -- A IT00233 Ciss, Coss, Crss -- VDS 100 --0.6 1000 Switching Time, SW Time -- ns 5 --0.5 Diode Forward Voltage, VSD -- V IT00232 [Nch] VDD=15V VGS=4V 7 Switching Time, SW Time -- ns 2 --25° C 0.1 3 25°C 2 Ta= 75° C Forward Current, IF -- A 3 Ta=7 5°C 25°C --25°C Forward Current, IF -- A 5 2 [Nch] f=1MHz 3 IT00246 Ciss, Coss, Crss -- VDS 100 [Pch] f=1MHz 7 5 5 Ciss 3 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF [Pch] VGS=0 7 5 2 Coss 10 Crss 7 5 Ciss 3 2 Coss 10 7 Crss 5 3 3 2 2 1.0 1.0 0 10 5 10 15 20 25 0 30 Drain-to-Source Voltage, VDS -- V IT00234 VGS -- Qg [Nch] Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 --10 --15 --20 --25 VGS -- Qg --30 IT00247 [Pch] VDS= --10V ID= --200mA --9 8 --5 Drain-to-Source Voltage, VDS -- V --10 VDS=10V ID=300mA 9 Gate-to-Source Voltage, VGS -- V IF -- VSD --1.0 --8 --7 --6 --5 --4 --3 --2 --1 1 0 0 0 0.5 1.0 1.5 Total Gate Charge, Qg -- nC 2.0 2.5 IT00235 0 0.5 1.0 1.5 Total Gate Charge, Qg -- nC 2.0 2.5 IT00248 No.6796-5/6 MCH6615 ASO 5 3 IDP=2.6A 3 <10µs 2 2 1m ms 10 0m s op era 2 tio Operation in this area is limited by RDS(on). 0.1 7 5 Drain Current, ID -- A Drain Current, ID -- A DC 3 3 n 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 0.8 5 <10µs 1m s 3 5 10 ms ID= --0.4A 3 2 --0.1 7 10 Operation in this area is limited by RDS(on). DC 0m s ope rat ion 5 2 IT02520 Drain-to-Source Voltage, VDS -- V [Pch, Nch] PD -- Ta 1.0 IDP= --1.6A 7 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit 2 Allowable Power Dissipation, PD -- W 10 ID=0.65A [Pch] --1.0 s 1.0 7 5 ASO [Nch] Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit --0.01 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 IT02519 M ou nte do na 0.6 ce ram ic bo ard (90 0.4 0m m2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT02521 Note on usage : Since the MCH6615 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.6796-6/6