SANYO MCH6644

MCH6644
Ordering number : ENN8959
N-Channel and P-Channel Silicon MOSFETs
MCH6644
General-Purpose Switching Device
Applications
Features
•
•
•
•
The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density
mounting.
Excellent ON-resistance characteristic.
Best suited for load switches.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
Gate-to-Source Voltage
VGSS
±20
±20
V
ID
1.8
--1.2
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
7.2
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--4.8
0.8
V
A
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Forward Transfer Admittance
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
30
V
1.2
0.78
1
µA
±10
µA
2.6
V
1.3
S
RDS(on)1
RDS(on)2
ID=1A, VGS=10V
ID=0.5A, VGS=4V
160
210
mΩ
300
420
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
95
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
16
pF
Static Drain-to-Source On-State Resistance
Marking : WU
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1405PE MS IM TB-00001813 No.8959-1/6
MCH6644
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.2
ns
Rise Time
tr
td(off)
See specified Test Circuit.
4.5
ns
See specified Test Circuit.
13
ns
tf
See specified Test Circuit.
6.4
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.8A
3.2
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.8A
0.74
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.8A
0.42
Diode Forward Voltage
VSD
IS=1.8A, VGS=0V
0.93
nC
1.2
V
--1
µA
±10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
--30
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
--1.2
yfs
RDS(on)1
VDS=--10V, ID=--0.6A
0.6
Cutoff Voltage
Forward Transfer Admittance
V
--2.6
1.0
V
S
ID=--0.6A, VGS=--10V
ID=--0.3A, VGS=--4V
320
420
mΩ
RDS(on)2
Ciss
590
830
mΩ
VDS=--10V, f=1MHz
104
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
17
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12.5
ns
Rise Time
tr
td(off)
See specified Test Circuit.
24
ns
See specified Test Circuit.
12
ns
tf
See specified Test Circuit.
12.2
ns
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--1.2A
3.3
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--10V, VGS=--10V, ID=--1.2A
VDS=--10V, VGS=--10V, ID=--1.2A
0.48
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=--1.2A, VGS=0V
Package Dimensions
unit : mm
7022-006
0.45
--0.91
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.25
6
3
2
1
1
2
3
Top view
0.15
0.65
0.07
1.6
6
2.0
5
4
0.85
0.25
2.1
0.3
5
V
Electrical Connection
Bottom View
4
nC
--1.5
1 2 3
Top View
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
No.8959-2/6
MCH6644
Switching Time Test Circuit
[N-channel]
[P-channel]
VIN
VIN
VDD=15V
10V
0V
VDD= --15V
0V
--10V
ID=1A
RL=15Ω
VIN
D
D
VOUT
PW=10µs
D.C.≤1%
G
--1.0
.0V
[Pch]
--4
.0V
--1
0
V
4.0
V
V
6.0
10.0
ID -- VDS
--1.2
V
1.4
3.5
Drain Current, ID -- A
Drain Current, ID -- A
[Nch]
S
.0V
ID -- VDS
1.6
50Ω
P.G
S
--6
50Ω
1.8
VOUT
PW=10µs
D.C.≤1%
G
P.G
ID= --0.6A
RL=25Ω
VIN
1.2
1.0
0.8
3.0V
0.6
--0.8
--3.0V
--0.6
--0.4
VGS= --2.5V
0.4
--0.2
VGS=2.5V
0.2
0
0.6
0.7
0.9
IT07277
ID -- VGS
[Nch]
1.2
1.0
75°
C
--25°
C
0.8
5°C
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
IT07278
ID -- VGS
[Pch]
--1.6
1.4
Ta=
2
--0.3
Drain-to-Source Voltage, VDS -- V
Ta=
--25
°C
75°
C
1.6
0.2
--0.2
VDS= --10V
--1.8
Drain Current, ID -- A
Ta=
--25
°C
75°
C
1.8
0.4
--0.1
--2.0
VDS=10V
0.6
0
1.0
Drain-to-Source Voltage, VDS -- V
2.0
Drain Current, ID -- A
0.8
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
75°
C
--25
°C
0.5
°C
0.4
25
0.3
Ta
=
0.2
C
0.1
25°
0
25 °
C
0
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V
4.0
4.5
IT07279
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
--4.5
IT07280
No.8959-3/6
MCH6644
RDS(on) -- VGS
1200
Ta=25°C
600
500
400
1.0A
ID=0.5A
300
200
100
0
2
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
Ta=25°C
1000
800
--600mA
600
ID= --300mA
400
200
20
=4V
, VGS
0.5A
I D=
250
200
.0
I D=1
=10V
A, VGS
150
100
50
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
3
2
25
1.0
7
°C
C
5°
-2
=-
5
Ta
5°C
7
3
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Drain Current, ID -- A
2
3
800
--14
--16
--18
--20
IT07282
[Pch]
= --4V
, VGS
600
=
mA, V GS
400
I D= --600
--10V
200
--40
--20
0
20
40
60
80
100
120
140
160
IT07284
yfs -- ID
5
[Pch]
VDS= --10V
3
2
°C
25
5°C
1.0
7
=
Ta
5
--2
C
75°
3
2
0.1
--0.01
5
2
3
5
7 --0.1
2
3
5
7 --1.0
Drain Current, ID -- A
[Nch]
2
3
IT07286
IS -- VSD
3
VGS=0V
3
--12
A
300m
I D= --
IT07285
IS -- VSD
5
--10
Ambient Temperature, Ta -- °C
[Nch]
VDS=10V
--8
RDS(on) -- Ta
IT10206
yfs -- ID
5
--6
1000
0
--60
160
Forward Transfer Admittance, yfs -- S
0
--60
--4
1200
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
300
--2
Gate-to-Source Voltage, VGS -- V
[Nch]
450
350
0
IT10205
RDS(on) -- Ta
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
[Pch]
0
0
Forward Transfer Admittance, yfs -- S
RDS(on) -- VGS
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
700
[Pch]
VGS=0V
2
2
3
2
--0.1
7
5
3
3
2
2
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
1.1
1.2
IT07287
5°C
25°
C
--25°
C
0.1
7
5
7
5
Ta=
7
Source Current, IS -- A
2
--25
°C
5°C
25°
C
3
Ta=
7
Source Current, IS -- A
--1.0
1.0
7
5
--0.01
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
Diode Forward Voltage, VSD -- V
--1.2
IT07288
No.8959-4/6
MCH6644
SW Time -- ID
3
7
5
3
td(off)
10
tf
td(on)
7
5
tr
3
VDD= --15V
VGS= --10V
2
Switching Time, SW Time -- ns
100
[Pch]
100
7
5
3
tf
Switching Time, SW Time -- ns
3
VDD=15V
VGS=10V
2
2
SW Time -- ID
[Nch]
2
td(off)
td(on)
10
tr
7
5
2
3
1.0
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
3
5
7 --0.1
[Nch]
Ciss, Coss, Crss -- pF
Ciss
5
3
3
[Pch]
7
5
3
Coss
2
Crss
10
10
0
5
10
15
20
25
Gate-to-Source Voltage, VGS -- V
7
6
5
4
3
2
--15
--20
--25
1
--30
IT07292
VGS -- Qg
--10
[Pch]
VDS= --10V
ID= --1.2A
--9
8
--10
Drain-to-Source Voltage, VDS -- V
[Nch]
VDS=10V
ID=1.8A
9
--5
IT07291
VGS -- Qg
10
0
30
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
2
IT07290
Ciss
Crss
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1.0
0.5
1.5
2.0
2.5
3.5
3.0
Total Gate Charge, Qg -- nC
IT07293
ASO
[Nch]
<10µs
IDP=7.2A
3
2
5 7 10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT10208
on
2 3
ati
5 7 1.0
er
2 3
s
5 7 0.1
ID= --1.2A
op
3
10
0
1m µs
s
IDP= --4.8A
0m
2
[Pch]
<10µs
DC
0.01
0.01
ASO
3
2
--0.1
7
5
2
3.5
IT07294
--1.0
7
5
3
3.0
10
n
io
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
2.5
s
s
Operation in this area
is limited by RDS(on).
2.0
m
m
at
er
op
3
2
1.5
Total Gate Charge, Qg -- nC
10
10
C
s
D
0m
10
1.0
7
5
1.0
0.5
7
5
10
1m 0µ
s s
ID=1.8A
0.1
7
5
0
Drain Current, ID -- A
0
Drain Current, ID -- A
7 --1.0
f=1MHz
100
Coss
2
3
2
5
2
7
3
2
3
Ciss, Coss, Crss -- VDS
3
f=1MHz
100
10
7
5
2
Drain Current, ID -- A
2
Ciss, Coss, Crss -- pF
2
IT07289
Ciss, Coss, Crss -- VDS
3
2
--0.01
7
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.01 2
3
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT10207
No.8959-5/6
MCH6644
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
0.8
[Nch / Pch]
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(90
0m
m2
✕0
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07297
Note on usage : Since the MCH6644 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2005. Specifications and information herein are subject
to change without notice.
PS No.8959-6/6