MCH6644 Ordering number : ENN8959 N-Channel and P-Channel Silicon MOSFETs MCH6644 General-Purpose Switching Device Applications Features • • • • The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 Gate-to-Source Voltage VGSS ±20 ±20 V ID 1.8 --1.2 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% 7.2 Mounted on a ceramic board (900mm2✕0.8mm)1unit --4.8 0.8 V A W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 30 V 1.2 0.78 1 µA ±10 µA 2.6 V 1.3 S RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=0.5A, VGS=4V 160 210 mΩ 300 420 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 95 pF Output Capacitance Coss VDS=10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 16 pF Static Drain-to-Source On-State Resistance Marking : WU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1405PE MS IM TB-00001813 No.8959-1/6 MCH6644 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 6.2 ns Rise Time tr td(off) See specified Test Circuit. 4.5 ns See specified Test Circuit. 13 ns tf See specified Test Circuit. 6.4 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.8A 3.2 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.8A 0.74 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.8A 0.42 Diode Forward Voltage VSD IS=1.8A, VGS=0V 0.93 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V --30 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--0.6A 0.6 Cutoff Voltage Forward Transfer Admittance V --2.6 1.0 V S ID=--0.6A, VGS=--10V ID=--0.3A, VGS=--4V 320 420 mΩ RDS(on)2 Ciss 590 830 mΩ VDS=--10V, f=1MHz 104 pF Output Capacitance Coss VDS=--10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 17 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns Rise Time tr td(off) See specified Test Circuit. 24 ns See specified Test Circuit. 12 ns tf See specified Test Circuit. 12.2 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.2A 3.3 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--1.2A VDS=--10V, VGS=--10V, ID=--1.2A 0.48 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.2A, VGS=0V Package Dimensions unit : mm 7022-006 0.45 --0.91 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.25 6 3 2 1 1 2 3 Top view 0.15 0.65 0.07 1.6 6 2.0 5 4 0.85 0.25 2.1 0.3 5 V Electrical Connection Bottom View 4 nC --1.5 1 2 3 Top View 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 No.8959-2/6 MCH6644 Switching Time Test Circuit [N-channel] [P-channel] VIN VIN VDD=15V 10V 0V VDD= --15V 0V --10V ID=1A RL=15Ω VIN D D VOUT PW=10µs D.C.≤1% G --1.0 .0V [Pch] --4 .0V --1 0 V 4.0 V V 6.0 10.0 ID -- VDS --1.2 V 1.4 3.5 Drain Current, ID -- A Drain Current, ID -- A [Nch] S .0V ID -- VDS 1.6 50Ω P.G S --6 50Ω 1.8 VOUT PW=10µs D.C.≤1% G P.G ID= --0.6A RL=25Ω VIN 1.2 1.0 0.8 3.0V 0.6 --0.8 --3.0V --0.6 --0.4 VGS= --2.5V 0.4 --0.2 VGS=2.5V 0.2 0 0.6 0.7 0.9 IT07277 ID -- VGS [Nch] 1.2 1.0 75° C --25° C 0.8 5°C --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT07278 ID -- VGS [Pch] --1.6 1.4 Ta= 2 --0.3 Drain-to-Source Voltage, VDS -- V Ta= --25 °C 75° C 1.6 0.2 --0.2 VDS= --10V --1.8 Drain Current, ID -- A Ta= --25 °C 75° C 1.8 0.4 --0.1 --2.0 VDS=10V 0.6 0 1.0 Drain-to-Source Voltage, VDS -- V 2.0 Drain Current, ID -- A 0.8 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 75° C --25 °C 0.5 °C 0.4 25 0.3 Ta = 0.2 C 0.1 25° 0 25 ° C 0 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 4.5 IT07279 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 --4.5 IT07280 No.8959-3/6 MCH6644 RDS(on) -- VGS 1200 Ta=25°C 600 500 400 1.0A ID=0.5A 300 200 100 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V Ta=25°C 1000 800 --600mA 600 ID= --300mA 400 200 20 =4V , VGS 0.5A I D= 250 200 .0 I D=1 =10V A, VGS 150 100 50 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 3 2 25 1.0 7 °C C 5° -2 =- 5 Ta 5°C 7 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 800 --14 --16 --18 --20 IT07282 [Pch] = --4V , VGS 600 = mA, V GS 400 I D= --600 --10V 200 --40 --20 0 20 40 60 80 100 120 140 160 IT07284 yfs -- ID 5 [Pch] VDS= --10V 3 2 °C 25 5°C 1.0 7 = Ta 5 --2 C 75° 3 2 0.1 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A [Nch] 2 3 IT07286 IS -- VSD 3 VGS=0V 3 --12 A 300m I D= -- IT07285 IS -- VSD 5 --10 Ambient Temperature, Ta -- °C [Nch] VDS=10V --8 RDS(on) -- Ta IT10206 yfs -- ID 5 --6 1000 0 --60 160 Forward Transfer Admittance, yfs -- S 0 --60 --4 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 300 --2 Gate-to-Source Voltage, VGS -- V [Nch] 450 350 0 IT10205 RDS(on) -- Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Pch] 0 0 Forward Transfer Admittance, yfs -- S RDS(on) -- VGS [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 [Pch] VGS=0V 2 2 3 2 --0.1 7 5 3 3 2 2 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 1.2 IT07287 5°C 25° C --25° C 0.1 7 5 7 5 Ta= 7 Source Current, IS -- A 2 --25 °C 5°C 25° C 3 Ta= 7 Source Current, IS -- A --1.0 1.0 7 5 --0.01 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V --1.2 IT07288 No.8959-4/6 MCH6644 SW Time -- ID 3 7 5 3 td(off) 10 tf td(on) 7 5 tr 3 VDD= --15V VGS= --10V 2 Switching Time, SW Time -- ns 100 [Pch] 100 7 5 3 tf Switching Time, SW Time -- ns 3 VDD=15V VGS=10V 2 2 SW Time -- ID [Nch] 2 td(off) td(on) 10 tr 7 5 2 3 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 3 5 7 --0.1 [Nch] Ciss, Coss, Crss -- pF Ciss 5 3 3 [Pch] 7 5 3 Coss 2 Crss 10 10 0 5 10 15 20 25 Gate-to-Source Voltage, VGS -- V 7 6 5 4 3 2 --15 --20 --25 1 --30 IT07292 VGS -- Qg --10 [Pch] VDS= --10V ID= --1.2A --9 8 --10 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V ID=1.8A 9 --5 IT07291 VGS -- Qg 10 0 30 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 2 IT07290 Ciss Crss --8 --7 --6 --5 --4 --3 --2 --1 0 0 1.0 0.5 1.5 2.0 2.5 3.5 3.0 Total Gate Charge, Qg -- nC IT07293 ASO [Nch] <10µs IDP=7.2A 3 2 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10208 on 2 3 ati 5 7 1.0 er 2 3 s 5 7 0.1 ID= --1.2A op 3 10 0 1m µs s IDP= --4.8A 0m 2 [Pch] <10µs DC 0.01 0.01 ASO 3 2 --0.1 7 5 2 3.5 IT07294 --1.0 7 5 3 3.0 10 n io Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2.5 s s Operation in this area is limited by RDS(on). 2.0 m m at er op 3 2 1.5 Total Gate Charge, Qg -- nC 10 10 C s D 0m 10 1.0 7 5 1.0 0.5 7 5 10 1m 0µ s s ID=1.8A 0.1 7 5 0 Drain Current, ID -- A 0 Drain Current, ID -- A 7 --1.0 f=1MHz 100 Coss 2 3 2 5 2 7 3 2 3 Ciss, Coss, Crss -- VDS 3 f=1MHz 100 10 7 5 2 Drain Current, ID -- A 2 Ciss, Coss, Crss -- pF 2 IT07289 Ciss, Coss, Crss -- VDS 3 2 --0.01 7 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10207 No.8959-5/6 MCH6644 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.8 [Nch / Pch] M ou nte do na 0.6 ce ram ic bo ard 0.4 (90 0m m2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07297 Note on usage : Since the MCH6644 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. PS No.8959-6/6