SANYO CPH5605

Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2168
[CPH5605]
2.9
5
4
0.15
3
2.8
0.05
0.6
1.6
0.6
· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby enabling high-density mounting.
· 2.5V drive.
0.2
Features
1
2
0.4
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
Specifications
0.9
0.7
0.2
0.95
0.4
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Ratings
Conditions
N-channel
P-channel
Unit
VDSS
VGSS
20
–20
V
±10
±10
V
ID
1.4
–1
A
5.6
–4
A
0.9
W
150
˚C
–55 to +150
˚C
Drain Current (pulse)
IDP
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Mounted on a ceramic board (600mm2×0.8mm) 1unit
Channel Temperature
PD
Tch
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
20
V
VDS=20V, VGS=0
10
µA
±10
µA
1.3
V
200
260
mΩ
260
360
mΩ
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
1.8
RDS(on)1
VDS=10V, ID=700mA
ID=700mA, VGS=4V
RDS(on)2
ID=400mA, VGS=2.5V
| yfs |
Static Drain-to-Source On-State Resistance
ID=1mA, VGS=0
Marking : FE
2.5
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2490 No.6441-1/6
CPH5605
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
90
pF
Output Capacitance
Coss
60
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
28
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
10
ns
tr
See specified Test Circuit
20
ns
td(off)
See specified Test Circuit
20
ns
tf
See specified Test Circuit
20
ns
nC
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.4A
6
1
nC
2
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain "Miller" Charge
Qgd
VDS=10V, VGS=10V, ID=1.4A
VDS=10V, VGS=10V, ID=1.4A
Diode Forward Voltage
[P-channel]
VSD
IS=1.4A, VGS=0
V(BR)DSS
IDSS
ID=–1mA, VGS=0
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
IGSS
VGS(off)
| yfs |
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
0.9
1.2
V
–10
µA
–20
V
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–500mA
–0.4
1.0
±10
µA
–1.4
V
1.4
S
RDS(on)1
ID=–500mA, VGS=–4V
420
550
mΩ
RDS(on)2
ID=–300mA, VGS=–2.5V
630
890
mΩ
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
100
pF
60
pF
25
pF
10
ns
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
VDS=–10V, f=1MHz
See specified Test Circuit
tr
See specified Test Circuit
25
ns
td(off)
See specified Test Circuit
27
ns
tf
See specified Test Circuit
32
ns
nC
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=–10V, VGS=–10V, ID=–1.0A
5
1
nC
1
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain "Miller" Charge
Qgd
VDS=–10V, VGS=–10V, ID=–1.0A
VDS=–10V, VGS=–10V, ID=–1.0A
Diode Forward Voltage
VSD
IS=–1.0A, VGS=0
–0.9
–1.5
V
Electrical Connection
S
G1
D1
G2
D2
(Top view)
Switching Time Test Circuit
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=10V
VDD=--10V
VIN
VIN
4V
0V
ID=700mA
RL=14.3Ω
VIN
D
PW=10µs
D.C.≤1%
VOUT
0V
--4V
D
PW=10µs
D.C.≤1%
G
P.G
ID=--500mA
RL=20Ω
VIN
VOUT
G
50Ω
P.G
S
50Ω
S
No.6441-2/6
CPH5605
8.0V
6.0V
1.2
V
2.0V
1.0
0.8
0.6
VGS=1.5V
--6
.
--1
0.0
V
2.5
Drain Current, ID – A
3.
0V
4.0
10.
0V
Drain Current, ID – A
1.6
1.4
0V
--8.0V
--1.4
V
1.8
ID -- VDS
--1.6
--1.2
[Pch]
.0V
--3
.0V
2.0
[Nch]
--4
ID -- VDS
V
--2.5
--1.0
--0.8
--2.0V
--0.6
--0.4
0.4
--0.2
0.2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IT01074
ID -- VGS
[Nch]
4.0
0
1.0
Drain-to-Source Voltage, VDS – V
--0.1
--0.2
--0.3
--0.4 --0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Drain-to-Source Voltage, VDS – V
IT00780
ID -- VGS
[Pch]
--3.0
VDS=10V
VDS=--10V
Ta=
--25
°C
25°
C
--2.5
75
°C
3.0
Drain Current, ID – A
3.5
Drain Current, ID – A
0
2.5
2.0
1.5
1.0
--2.0
2 5°
C
0.1
75
°C
0
Ta=
--25
°C
0
VGS=--1.5V
--1.5
--1.0
--0.5
0.5
0
0
0
0.5
1.0
2.0
2.5
3.0
3.5
IT01075
RDS(on) -- VGS
[Nch]
500
0
Ta=25°C
450
400
350
300
ID=400mA
700mA
250
200
150
100
50
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Gate-to-Source Voltage, VGS – V
IT00781
RDS(on) -- VGS
[Pch]
Ta=25°C
900
800
ID=--0.3A
700
--0.5A
600
500
400
300
200
100
0
0
0
1
2
3
4
5
7
6
8
9
IT01076
RDS(on) -- Ta
[Nch]
40
I D=
250
Static Drain-to-Source
On-State Resistance, RDS(on) – mΩ
V
=2.5
, VGS
0mA
V
4.0
S=
, VG
0mA
70
I D=
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
--1
--2
--3
100
Ambient Temperature, Ta – °C
120
140
160
IT01077
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS – V
IT00782
RDS(on) -- Ta
[Pch]
1000
350
300
0
10
Gate-to-Source Voltage, VGS – V
400
Static Drain-to-Source
On-State Resistance, RDS(on) – mΩ
--0.5
1000
Static Drain-to-Source
On-State Resistance, RDS(on) – mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) – mΩ
1.5
Gate-to-Source Voltage, VGS – V
900
800
V
--2.5
S=
VG
,
A
--0.3
I D=
V
--4.0
S=
VG
,
-0.5A
I D=-
700
600
500
400
300
200
100
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta – °C
120
140
160
IT00783
No.6441-3/6
CPH5605
Ta
1.0
°C
75
7
5
3
2
2
3
5 7 0.1
Drain Current, ID – A
5 7 10
IT01078
IF -- VSD
[Nch]
10
7
5
3
2
2
3
5 7 1.0
2
3
0.1
7
5
3
2
0.01
7
5
3
2
0.001
3
2
25
°C
25
=--
1.0
7
Ta
°C
°C
5
75
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT00784
IF -- VSD
--10
7
5
[Pch]
VGS = 0
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
0.3
0.6
0.9
1.2
1.5
Diode Forward Voltage, VSD – V
IT01079
SW Time -- ID
[Nch]
1000
7
5
0
3
2
tr
100
7
5
tf
td(off)
3
2
10
7
5
td(on)
3
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD – V
IT00785
SW Time -- ID
[Pch]
1000
7
5
VDD=10V
VGS=4V
VDD=--10V
VGS=--4V
3
2
100
7
5
tr
tf
3
td (
o
2
ff)
td(on)
10
7
5
3
2
2
1.0
1.0
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID – A
Ciss, Coss, Crss -- VDS
1000
7
3
7
10
IT01080
[Nch]
f=1MHz
3
3
Ciss
7
Coss
5
3
Crss
2
3
5
7 --1.0
2
3
7
5
100
7 --0.1
Ciss, Coss, Crss -- VDS
1000
5
2
5
Drain Current, ID – A
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
5
Drain Current, ID – A
Forward Current, IF – A
1.0
7
5
3
2
7
0.1
--0.01
VGS = 0
Ta=7
5°
25°C C
--25°
C
Forward Current, IF – A
°C
25
°C
25
=--
2
[Pch]
VDS=--10V
C
25°C
--25°C
3
Forward Transfer Admittance, | yfs | – S
5
yfs -- ID
10
Switching Time, SW Time – ns
Forward Transfer Admittance, | yfs | – S
7
0.1
0.01
Switching Time, SW Time – ns
[Nch]
VDS=10V
Ta=75
°
yfs -- ID
10
5
7 --10
IT00786
[Pch]
f=1MHz
2
Ciss
100
Coss
7
5
Crss
3
2
2
10
10
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS – V
18
20
IT01081
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS – V
--18
--20
IT00787
No.6441-4/6
CPH5605
VGS -- Qg
10
VDS=10V
ID=1.4A
8
7
6
5
4
3
2
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
0
10
7
5
2
3
4
5
6
Total Gate Charge, Qg – nC
IT01082
ASO
[Nch]
IDP=5.6A
ms
10
0m
7
5
DC
Operation in
this area is
limited by RDS(on).
3
2
0.1
7
5
s
op
era
tio
n
Ta=25°C
Single pulse
1 unit
3
2
0.1
2
3
5
7 1.0
2
3
5
7
3.0
3.5
4.0
4.5
[Pch]
ms
ID=--1A
DC
3
2
--0.1
7
5
100µs
1m
10
7
5
5.0
IT00788
s
10
0m
s
op
era
tio
Operation in
this area is
limited by RDS(on).
n
Ta=25°C
Single pulse
1 unit
Mounted on a ceramic board (600mm2×0.8mm)
2
10
Drain-to-Source Voltage, VDS – V
PD -- Ta
1.2
2.5
IDP=--4A
--1.0
3
2
Mounted on a ceramic board (600mm2×0.8mm)
0.01
2.0
3
2
10
ID=1.4A
1.5
ASO
--10
7
5
s
1.0
1.0
Total Gate Charge, Qg – nC
100µs
1m
3
2
0.5
0
Drain Current, ID – A
Drain Current, ID – A
[Pch]
VDS=--10V
ID=--1A
--9
1
Allowable Power Dissipation, PD – W
VGS -- Qg
--10
Gate-to-Source Voltage, VGS – V
9
Gate-to-Source Voltage, VGS – V
[Nch]
3
5
IT01083
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS – V
2
3
5
IT00790
[Nch, Pch]
1.0
M
0.9
ou
nte
do
0.8
na
ce
ram
0.6
ic
bo
ard
(6
00
0.4
mm
×0
2
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT01084
No.6441-5/6
CPH5605
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6441-6/6