Transistors with built-in Resistor UNR7231 (UN7231) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C 3˚ 1 0.4±0.08 1.0+0.1 –0.2 • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 4.0+0.25 –0.20 ■ Features 2.5±0.1 For low-frequency amplification 0.4±0.04 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 20 V Collector-emitter voltage (Base open) VCEO 20 V Collector current IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation * PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 0.4 max. Parameter 2.6±0.1 3˚ 45˚ 3.0±0.15 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: IC Internal Connection R1(1 kΩ) B C R2 (47 kΩ) E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 20 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 15 V, IB = 0 10 µA Emitter-base cutoff current (Collector open) IEBO VEB = 14 V, IC = 0 0.5 mA Forward current transfer ratio * hFE VCE = 10 V, IC = 150 mA 2 100 VCE(sat) IC = 500 mA, IB = 5 mA Collector-emitter saturation voltage * Input resistance R1 Resistance ratio R1/R2 Transition frequency fT Conditions VCB = 20 V, IE = −20 mA, f = 200 MHz Min Typ 800 Max Unit 0.4 V 0.7 1.0 1.3 kΩ 0.016 0.021 0.025 55 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part number in the parenthesis shows conventional part number. Publication date: January 2004 SJH00032BED 1 UNR7231 IC VCE 1.2 Ta = 25°C IB = 1.2 mA 1.0 1.2 Collector current IC (A) Total power dissipation PT (W) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0.8 0.4 1.0 mA 0.8 mA 0.8 0.6 mA 0.6 0.4 mA 0.4 0.2 mA 0.2 0 0 0 40 80 120 160 0 Forward current transfer ratio hFE VCE = 10 V 2 000 Ta = 75°C 1 600 25°C 1 200 −25°C 800 400 0 10−2 10−1 4 6 8 10 12 Cob VCB 1 Collector current IC (A) 10 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 2 400 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PT Ta 1.6 30 25 20 15 10 5 0 10−1 1 10 Collector-base voltage VCB (V) SJH00032BED 102 102 IC /IB = 100 10 1 Ta = 75°C 25°C −25°C 10−1 10−2 10−2 10−1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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