AO4752 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low RDS (on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features VDS ID (at VGS=10V) 30V 15A RDS(ON) (at VGS=10V) < 8.8mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current C ±20 V 12 A IDM 102 Avalanche Current C IAS 22 A Avalanche energy L=0.05mH C EAS 12 mJ VDS Spike VSPIKE 36 V Pulsed Drain Current Power Dissipation B 100ns TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 15 ID TA=70°C Maximum 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4752 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 30 TJ=55°C 100 1.5 TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=0.2A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 2 VGS=10V, VDS=15V, ID=15A 1 mA ±100 nA 2.5 V 7.2 8.8 10.2 12.5 12.3 15.5 mΩ 0.65 V 4 A 71 0.45 mΩ S 605 VGS=0V, VDS=15V, f=1MHz Units V 0.5 VGS=10V, ID=15A Output Capacitance Max VDS=30V, VGS=0V IDSS Coss Typ pF 275 pF 36.5 pF 2 3 Ω 11 15 nC 5.5 8 nC 2 nC Gate Drain Charge 2.6 nC Turn-On DelayTime 5 ns 2.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 17 ns 3 ns IF=15A, dI/dt=500A/µs 11.5 Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 12.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/6 www.freescale.net.cn AO4752 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V 7V VDS=5V 5V 4.5V 60 4V 40 ID(A) ID (A) 60 40 125°C 20 20 3.5V 25°C VGS=3V 0 0 0 1 2 3 4 0 5 18 2 3 4 5 6 1.6 Normalized On-Resistance 16 VGS=4.5V 14 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 10 8 6 VGS=10V 4 2 VGS=10V ID=15A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=15A 1.0E+00 20 125°C 40 1.0E-02 25°C 10 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 3/6 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 15 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4752 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=15A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 Crss 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 1ms 1000.0 TA=25°C 100.0 TA=100°C 10.0 ID (Amps) IAR (A) Peak Avalanche Current 100.0 TA=150°C 10.0 1ms 1.0 TJ(Max)=150°C TA=25°C 0.1 TA=125°C 10µs 100µs RDS(ON) limited 10s DC 0.0 1.0 1 10 100 0.01 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4752 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4752 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn