APT100GF60JRD
600V
140A
E
E
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
27
2
T-
C
G
SO
"UL Recognized"
ISOTOP ®
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
G
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (IGBT)
Symbol
Parameter
APT100GF60JRD
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
600
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current
I CM2
Pulsed Collector Current
1
PD
Total Power Dissipation
@ TC = 90°C
UNIT
Volts
±20
140
100
Amps
280
200
390
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
EL
I
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
@ TC = 25°C
M
I CM1
1
A
Gate-Emitter Voltage
IN
VGE
RY
VCES
TJ,TSTG
C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA)
600
TYP
MAX
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.5
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
3.3
3.9
Gate Threshold Voltage
4.5
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
UNIT
Volts
0.8
2
TBD
±100
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6255 Rev A
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Test Conditions
Characteristic
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
Turn-on Delay Time
290
435
Gate Charge
VGE = 15V
335
40
Resistive Switching (25°C)
30
VGE = 15V
105
A
Turn-on Delay Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
PR
140
I C = I C2
R G = 5Ω
7.0
TJ = +150°C
5.6
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
40
200
R G = 5Ω
115
TJ = +25°C
11.0
Fall Time
4
Total Switching Losses
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
210
I C = I C2
Ets
mJ
13.6
VGE = 15V
Turn-off Delay Time
ns
250
4
Turn-on Delay Time
ns
200
VGE = 15V
4
nC
40
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
pF
135
RG = 5Ω
Fall Time
UNIT
145
I C = I C2
Total Switching Losses
tf
f = 1 MHz
VCC = 0.8VCES
Ets
td(off)
1250
195
Turn-off Delay Time
Rise Time
890
I C = I C2
Rise Time
Turn-off Switching Energy
tr
5900
VCC = 0.5VCES
Eoff
td(on)
4400
IN
tf
3
IM
td(off)
MAX
VCE = 25V
EL
tr
TYP
Capacitance
VGE = 0V
Cies
td(on)
MIN
RY
Symbol
APT100GF60JRD
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6255 Rev A
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.32
Junction to Case (FRED)
0.42
°C/W
40
Junction to Ambient
Package Weight
UNIT
1.03
oz
29.2
gm
10
lb•in
1.1
N•m
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT100GF60JRD
UNIT
600
Volts
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5)
100
RMS Forward Current
170
IF(RMS)
Amps
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
IN
A
IFSM
RY
VRRM
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Characteristic / Test Conditions
MIN
IM
Symbol
TYP
1.7
IF = 200A
Volts
1.7
IF = 100A, TJ = 150°C
PR
EL
Maximum Forward Voltage
UNIT
2.0
IF = 100A
VF
MAX
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
75
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
60
trr2
Reverse Recovery Time
TJ = 25°C
60
trr3
IF = 100A, diF /dt = -800A/µs, VR = 350V
TJ = 100°C
92
tfr1
Forward Recovery Time
TJ = 25°C
185
tfr2
IF = 100A, diF /dt = 800A/µs, VR = 350V
TJ = 100°C
185
IRRM1
Reverse Recovery Current
TJ = 25°C
27
38
IRRM2
IF = 100A, diF /dt = -800A/µs, VR = 350V
TJ = 100°C
42
54
Qrr1
Recovery Charge
TJ = 25°C
810
Qrr2
IF = 100A, diF /dt = -800A/µs, VR = 350V
TJ = 100°C
1930
Vfr1
Forward Recovery Voltage
TJ = 25°C
10.2
Vfr2
IF = 100A, diF /dt = 800A/µs, VR = 350V
TJ = 100°C
10.2
Rate of Fall of Recovery Current
TJ = 25°C
600
IF = 100A, diF /dt = -800A/µs, VR = 350V (See Figure 10)
TJ = 100°C
400
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6255 Rev A
Symbol
APT100GF60JRD
4000
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
240
TJ = 150°C
180
TJ = 100°C
TJ = 25°C
120
TJ = -55°C
60
0
200A
100A
2000
1000
50A
1.6
60
40
50A
IN
30
10
EL
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
400
300
200A
PR
TJ = 100°C
VR = 350V
100A
200
50A
100
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
0.8
trr
trr
IRRM
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
-50
15
3000
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
20
Qrr
1.2
A
100A
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
200A
50
2500
TJ = 100°C
VR = 350V
IF = 100A
12.5
Vfr
2000
10
1500
7.5
1000
5
500
tfr
2.5
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
0
0.5
0.2
0.05
0.1
0.05
Note:
0.02
0.01
PDM
ZΘJC, THERMAL IMPEDANCE
(°C/W)
052-6255 Rev A
D=0.5
0.1
0.01
t1
SINGLE PULSE
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001 -5
10
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
TJ = 100°C
VR = 350V
IM
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
3000
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
TJ = 100°C
VR = 350V
RY
IF, FORWARD CURRENT
(AMPERES)
300
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT100GF60JRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter
052-6255 Rev A
30.1 (1.185)
30.3 (1.193)
Collector
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Dimensions in Millimeters and (Inches)
Gate