APT15GT60BRD
600V
30A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
TO-247
G
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol
C
C
E
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KΩ)
600
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 110°C
I CM2
Pulsed Collector Current
1
EAS
Single Pulse Avalanche Energy
PD
Total Power Dissipation
@ TC = 110°C
30
15
Amps
60
IM
2
Volts
±20
30
24
mJ
125
Watts
-55 to 150
EL
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
@ TC = 25°C
A
Pulsed Collector Current
IN
I CM1
1
RY
VCES
TJ,TSTG
UNIT
APT15GT60BRD
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C)
600
Gate Threshold Voltage
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
TYP
MAX
3
4
5
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
40
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
200
±100
Gate-Emitter Leakage Current (VGE = ±25V, VCE = 0V)
UNIT
Volts
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6250 Rev -
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Test Conditions
Characteristic
Capacitance
VGE = 0V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
Eon
Turn-on Delay Time
VGE = 15V
18
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
13
PR
34
VGE = 15V
55
R G = 5Ω
0.29
TJ = +150°C
0.29
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
13
35
4
Total Switching Losses
gfe
Forward Transconductance
R G = 5Ω
34
TJ = +25°C
0.45
VCE = 20V, I C = I C2
ns
73
I C = 0.8I C2
Fall Time
Ets
mJ
0.58
VGE = 15V
Turn-off Delay Time
ns
84
4
Turn-on Delay Time
ns
78
I C = 0.8I C2
4
nC
48
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
Total Switching Losses
tf
6
RG = 5Ω
Ets
td(off)
Resistive Switching (25°C)
I C = 0.8I C2
Fall Time
UNIT
pF
37
7
Turn-off Delay Time
Rise Time
53
VCC = 0.66VCES
Turn-off Switching Energy
tr
Gate Charge
VGE = 15V
I C = 0.8I C2
Rise Time
Eoff
td(on)
52
A
tf
f = 1 MHz
IN
td(off)
Turn-on Delay Time
MAX
90
VCC = 0.66VCES
IM
tr
3
TYP
825
VCE = 25V
EL
td(on)
MIN
RY
Symbol
APT15GT60BRD
mJ
3
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6250 Rev -
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
1.0
Junction to Case (FRED)
2.0
Junction to Ambient
40
Package Weight
UNIT
°C/W
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25Ω, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT15GT60BRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
APT15GT60BRD
UNIT
600
Volts
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
15
RMS Forward Current
25
IFSM
Symbol
Characteristic / Test Conditions
IN
STATIC ELECTRICAL CHARACTERISTICS (FRED)
MIN
TYP
UNIT
IM
Volts
IF = 15A, TJ = 150°C
1.6
Maximum Reverse Leakage Current
VR = VR Rated
150
Maximum Reverse Leakage Current
VR = VR Rated, TJ = 125°C
500
EL
LS
1.6
IF = 30A
10
Series Inductance (Lead to Lead 5mm from Base)
PR
IRM
Maximum Forward Voltage
MAX
1.8
IF = 15A
VF
Amps
110
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
A
IF(RMS)
RY
VRRM
µA
nH
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
50
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
40
trr2
Reverse Recovery Time
TJ = 25°C
40
trr3
IF = 15A, diF /dt = -100A/µs, VR = 350V
TJ = 100°C
80
tfr1
Forward Recovery Time
TJ = 25°C
170
tfr2
IF = 15A, diF /dt = 100A/µs, VR = 350V
TJ = 100°C
170
IRRM1
Reverse Recovery Current
TJ = 25°C
2.5
5
IRRM2
IF = 15A, diF /dt = -100A/µs, VR = 350V
TJ = 100°C
3
6
Qrr1
Recovery Charge
TJ = 25°C
50
Qrr2
IF = 15A, diF /dt = -100A/µs, VR = 350V
TJ = 100°C
120
Vfr1
Forward Recovery Voltage
TJ = 25°C
2.2
Vfr2
IF = 15A, diF /dt = 100A/µs, VR = 350V
TJ = 100°C
2.2
Rate of Fall of Recovery Current
TJ = 25°C
200
IF = 15A, diF /dt = -100A/µs, VR = 350V (See Figure 10)
TJ = 100°C
100
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6250 Rev -
Symbol
APT15GT60BRD
60
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
1200
30
TJ = 150°C
TJ = 100°C
TJ = 25°C
20
TJ = -55°C
10
0
1
2
3
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
600
15A
400
200
7.5A
2.0
40
30A
20
IN
7.5A
10
EL
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
100
PR
30A
15A
80
7.5A
60
TJ = 100°C
VR = 350V
40
20
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
Qrr
trr
1.2
0.8
trr
IRRM
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
-50
25
500
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
15A
1.6
A
30
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
TJ = 100°C
VR = 350V
IM
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
30A
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
800
TJ = 100°C
VR = 350V
IF = 15A
20
400
300
Vfr
15
10
200
5
100
tfr
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
2.0
0.5
D=0.5
0.2
0.1
0.05
NOTE:
0.1
PDM
ZΘJC, THERMAL IMPEDANCE
(°C/W)
052-6250 Rev -
1.0
0.02
0.05
t1
0.01
t2
SINGLE PULSE
DUTY FACTOR D = t1 / t2
PEAK TJ =PDM x Z JC + TC
0.01
0.005 -5
10
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
40
1000
RY
IF, FORWARD CURRENT
(AMPERES)
50
TJ = 100°C
VR = 350V
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT15GT60BRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
052-6250 Rev -
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
0.5 IRRM
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector
(Cathode)
Emitter
(Anode)