2SC4807 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , I C = 100 mA , f = 900 MHz Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4807 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 2 V Collector current IC 200 mA 800 mW 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 20 30 — V I C = 10 µA, IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 15 V, IE = 0 I CEO — — 1 mA VCE = 15 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE 50 120 250 Collector output capacitance Cob — 2.8 4.0 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 3.0 4.4 — GHz VCE = 5 V, IC = 100 mA Power gain PG 5.0 7.0 — dB VCE = 5 V, IC = 100 mA, f = 900 MHz Noise figure NF — 2.5 4.0 dB VCE = 5 V, IC = 20 mA, f = 900 MHz Note: Marking is “ER”. 2 VCE = 5 V, IC = 100 mA 2SC4807 DC Current Transfer Ratio vs. Collector Current 1600 200 DC Current Transfer Ratio h FE Collector Power Dissipation Pc (mW) (on the alumina ceramic board) Maximum Collector Dissipation Curve VCE = 5V 160 1200 120 800 400 0 50 100 150 80 40 0 200 1 Ambient Temperature Ta (°C) 6 VCE = 5 V 5 4 3 2 1 0 10 20 50 100 200 Collector Current I C (mA) 5 10 20 50 100 200 500 Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage 500 Collector Output Capacitance Cob (pF) Gain Bandwidth Product f T (GHz) Gain Bandwidth Product vs. Collector Current 2 5.2 IE = 0 4.4 f = 1 MHz 3.6 2.8 2.0 1.2 1 2 5 10 20 0.5 Collector to Base Voltage VCB (V) 3 2SC4807 Power Gain vs. Collector Current Noise Figure vs. Collector Current 10 10 f = 900 MHz VCE = 5V 8 Noise Figure NF (dB) Power Gain PG (dB) f = 900 MHz 6 4 2 0 8 VCE = 5V 6 4 2 0 2 5 10 20 50 100 200 Collector Current I C (mA) 2 5 10 20 50 100 200 Collector Current I C (mA) Output Power vs. Input Power 32 Output Power Pout (dBm) f = 900 MHz VCE = 5V 24 I C = 100 mA 16 8 0 8 16 24 Input Power Pin (dBm) 4 32 2SC4807 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 .6 1 90° 1.5 120° 2 .4 Scale: 4 / div. 60° 3 4 5 .2 150° 30° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 4 5 10 0° 180° –10 –5 –4 –3 –.2 –.4 –2 –.6 –60° –90° Condition: VCE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA) –120° –1.5 –.8 –1 Condition: VCE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA) S12 Parameter vs. Frequency 90° 120° –30° –150° S22 Parameter vs. Frequency Scale: 0.1 / div. 60° .8 .6 1 1.5 2 .4 150° 30° 3 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 4 5 10 –10 –30° –150° –5 –4 –3 –.2 –.4 –120° –60° –90° Condition: VCE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA) –2 –.6 –1.5 –.8 –1 Condition: VCE = 5 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) (I C = 20 mA) (I C = 100 mA) 5 2SC4807 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω, Emitter Common) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100 0.525 –150.0 14.03 104.7 0.039 58.4 0.336 –75.5 200 0.533 –171.9 7.16 90.9 0.063 65.7 0.197 –89.9 300 0.542 177.6 4.75 83.2 0.089 69.6 0.157 –98.3 400 0.544 170.2 3.60 77.5 0.116 71.0 0.146 –104.0 500 0.547 163.8 2.91 72.1 0.143 71.5 0.145 –109.0 600 0.552 158.2 2.46 67.4 0.170 71.3 0.150 –113.7 700 0.555 152.6 2.14 63.3 0.197 70.5 0.158 –117.1 800 0.558 147.5 1.90 59.3 0.225 69.6 0.166 –121.0 900 0.570 142.4 1.72 55.2 0.254 68.4 0.175 –124.6 1000 0.569 137.4 1.58 51.9 0.280 67.2 0.186 –128.1 S Parameter (VCE = 5 V, IC = 100 mA, ZO = 50 Ω, Emitter Common) Freq. S11 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100 0.488 –172.8 16.32 97.8 0.034 76.2 0.248 –116.9 200 0.502 176.3 8.08 88.0 0.066 78.6 0.195 –141.9 300 0.507 170.0 5.34 82.0 0.099 77.8 0.184 –152.2 400 0.507 163.6 4.03 77.2 0.132 76.4 0.181 –157.9 500 0.514 159.0 3.27 72.8 0.163 74.5 0.184 –161.8 600 0.513 153.6 2.75 68.8 0.195 72.7 0.189 –164.0 700 0.518 148.5 2.40 65.1 0.225 70.7 0.192 –165.8 800 0.524 144.0 2.13 61.3 0.254 68.5 0.196 –167.6 900 0.525 139.3 1.93 57.8 0.284 66.3 0.200 –169.4 1000 0.531 134.2 1.77 54.6 0.312 64.6 0.205 –170.8 6 S21 S12 S22 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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