HITACHI 2SC4807

2SC4807
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 4.4 GHz Typ
• High output power
1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , I C = 100 mA , f = 900 MHz
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC4807
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
15
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
200
mA
800
mW
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
30
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 15 V, IE = 0
I CEO
—
—
1
mA
VCE = 15 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 2 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
2.8
4.0
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
3.0
4.4
—
GHz
VCE = 5 V, IC = 100 mA
Power gain
PG
5.0
7.0
—
dB
VCE = 5 V, IC = 100 mA,
f = 900 MHz
Noise figure
NF
—
2.5
4.0
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Note: Marking is “ER”.
2
VCE = 5 V, IC = 100 mA
2SC4807
DC Current Transfer Ratio
vs. Collector Current
1600
200
DC Current Transfer Ratio h FE
Collector Power Dissipation Pc (mW)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
VCE = 5V
160
1200
120
800
400
0
50
100
150
80
40
0
200
1
Ambient Temperature Ta (°C)
6
VCE = 5 V
5
4
3
2
1
0
10
20
50
100
200
Collector Current I C (mA)
5 10 20 50 100 200 500
Collector Current I C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
500
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product
f T (GHz)
Gain Bandwidth Product
vs. Collector Current
2
5.2
IE = 0
4.4
f = 1 MHz
3.6
2.8
2.0
1.2
1
2
5
10
20
0.5
Collector to Base Voltage VCB (V)
3
2SC4807
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
10
10
f = 900 MHz
VCE = 5V
8
Noise Figure NF (dB)
Power Gain PG (dB)
f = 900 MHz
6
4
2
0
8
VCE = 5V
6
4
2
0
2
5
10 20
50 100 200
Collector Current I C (mA)
2
5
10 20
50 100 200
Collector Current I C (mA)
Output Power vs. Input Power
32
Output Power Pout (dBm)
f = 900 MHz
VCE = 5V
24
I C = 100 mA
16
8
0
8
16
24
Input Power Pin (dBm)
4
32
2SC4807
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
.6
1
90°
1.5
120°
2
.4
Scale: 4 / div.
60°
3
4
5
.2
150°
30°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 4 5 10
0°
180°
–10
–5
–4
–3
–.2
–.4
–2
–.6
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 20 mA)
(I C = 100 mA)
–120°
–1.5
–.8 –1
Condition: VCE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 20 mA)
(I C = 100 mA)
S12 Parameter vs. Frequency
90°
120°
–30°
–150°
S22 Parameter vs. Frequency
Scale: 0.1 / div.
60°
.8
.6
1
1.5
2
.4
150°
30°
3
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 4 5 10
–10
–30°
–150°
–5
–4
–3
–.2
–.4
–120°
–60°
–90°
Condition: VCE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 20 mA)
(I C = 100 mA)
–2
–.6
–1.5
–.8 –1
Condition: VCE = 5 V , Zo = 50 Ω
100 to 1000 MHz (100 MHz step)
(I C = 20 mA)
(I C = 100 mA)
5
2SC4807
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.525
–150.0
14.03
104.7
0.039
58.4
0.336
–75.5
200
0.533
–171.9
7.16
90.9
0.063
65.7
0.197
–89.9
300
0.542
177.6
4.75
83.2
0.089
69.6
0.157
–98.3
400
0.544
170.2
3.60
77.5
0.116
71.0
0.146
–104.0
500
0.547
163.8
2.91
72.1
0.143
71.5
0.145
–109.0
600
0.552
158.2
2.46
67.4
0.170
71.3
0.150
–113.7
700
0.555
152.6
2.14
63.3
0.197
70.5
0.158
–117.1
800
0.558
147.5
1.90
59.3
0.225
69.6
0.166
–121.0
900
0.570
142.4
1.72
55.2
0.254
68.4
0.175
–124.6
1000
0.569
137.4
1.58
51.9
0.280
67.2
0.186
–128.1
S Parameter (VCE = 5 V, IC = 100 mA, ZO = 50 Ω, Emitter Common)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.488
–172.8
16.32
97.8
0.034
76.2
0.248
–116.9
200
0.502
176.3
8.08
88.0
0.066
78.6
0.195
–141.9
300
0.507
170.0
5.34
82.0
0.099
77.8
0.184
–152.2
400
0.507
163.6
4.03
77.2
0.132
76.4
0.181
–157.9
500
0.514
159.0
3.27
72.8
0.163
74.5
0.184
–161.8
600
0.513
153.6
2.75
68.8
0.195
72.7
0.189
–164.0
700
0.518
148.5
2.40
65.1
0.225
70.7
0.192
–165.8
800
0.524
144.0
2.13
61.3
0.254
68.5
0.196
–167.6
900
0.525
139.3
1.93
57.8
0.284
66.3
0.200
–169.4
1000
0.531
134.2
1.77
54.6
0.312
64.6
0.205
–170.8
6
S21
S12
S22
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http:semiconductor.hitachi.com/
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: http://www.hitachi-eu.com/hel/ecg
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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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Germany
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.