HITACHI 2SC5137

2SC5137
Silicon NPN Epitaxial
ADE-208-224
1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 10 GHz typ
• High gain, low noise figure
PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5137
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
20
mA
Collector power dissipation
PC
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note: Marking is “YA–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I CBO
—
—
10
µA
VCB = 15 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.45
0.8
pF
VCB = 5 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT
7
10
—
GHz
VCE = 5 V, IC = 10 mA
Power gain
PG
12
16.5
—
dB
VCE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure
NF
—
1.5
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
2
VCE = 5 V, IC = 10 mA
2SC5137
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
DC Current Transfer Ratio h FE
Collector Power Dissipation Pc (mW)
160
120
80
40
0
Collector Output Capacitance Cob (pF)
16
VCE = 5V
12
8
4
VCE = 1V
0
1
2
5
10
20
Collector Current I C (mA)
50
120
80
40
0
0.1
200
Gain Bandwidth Product vs.
Collector Current
20
Gain Bandwidth Product f T (GHz)
50
100
150
Ambient Temperature Ta (°C)
160
V CE = 5 V
Pulse Test
1.0
0.8
1
10
Collector Current I C (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1 MHz
0.6
0.4
0.2
0
0.1 0.2 0.5 1
2
5
10 20
Collector to Base Voltage V CB (V)
3
2SC5137
20
Power Gain vs. Collector Current
16
12
Noise Figure vs. Collector Current
f = 900 MHz
VCE = 5V
Noise Figure NF (dB)
Power Gain PG (dB)
f = 900 MHz
10
VCE = 1V
8
4
8
6
VCE = 1V
4
2
VCE = 5V
0
0.1 0.2
4
0.5 1 2
5 10 20
Collector Current I C (mA)
50
0
0.1 0.2
0.5 1 2
5 10 20
Collector Current I C (mA)
50
2SC5137
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
Scale: 4 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
5
2SC5137
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
Scale: 4 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
6
–2
–.6
–.8
–1
–1.5
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
Unit: mm
2.2 Max
0.6
0.6 Max
0.45 ± 0.1
14.5 Min
1.8 Max
3.2 Max
4.2 Max
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
—
—
0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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