2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 Note: Marking is “XP-”. 1. Emitter 2. Collector 3. Emitter 4. Base 2SC5594 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 4.5 V Emitter to base voltage VEBO 0.8 V Collector current IC 35 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 12 — — V I C = 10 µA , IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 10 V , IE = 0 Collector cutoff current I CEO — — 1 µA VCE = 4 V , RBE = ∞ Emitter cutoff current I EBO — — 12 µA VEB = 0.8 V , IC = 0 DC current transfer ratio hFE 60 100 140 V VCE = 2 V , IC = 20 mA Collector output capacitance Cob — 0.3 0.6 pF VCB = 2 V , IE = 0 f = 1 MHz Gain bandwidth product fT 21 24 — GHz VCE = 2 V , IC = 30 mA f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V, IC = 30 mA f = 1.8 GHz Noise figure NF — 1.2 1.6 dB VCE = 2 V, IC = 5 mA f = 1.8 GHz 2 2SC5594 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 hFE 200 DC Current Transfer Ratio 150 100 50 0 50 0 100 150 (pF) Ambient Temperature 200 1 IE = 0 f = 1MHz 0.8 5 10 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 1.0 2 20 50 100 I C (mA) Gain Bandwidth Product vs. Collector Current 50 40 0.6 Gain Bandwidth Product Collector Output Capacitance fT Cob VCE = 3 V 2V 1V 100 (GHz) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 0.4 0.2 0 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 VCB (V) 10 VCE = 3 V 2V 1V 30 20 10 0 1 2 5 10 Collector Current 20 50 100 IC (mA) 3 2SC5594 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 3 V 2V VCE = 1 to 3 V 1V 12 Noise Figure Power Gain PG (dB) 16 NF (dB) f = 1.8GHz 8 4 0 1 f = 1.8GHz 4 3 2 1 0 2 5 10 20 Collector Current 50 100 1 2 5 10 Collector Current I C (mA) 20 50 IC (mA) 100 S21 Parameter vs. Collector Current 20 16 VCE = 3 V 2V 1V S 21 Parameter 2 |S 21| (dB) f = 2GHz 12 8 4 0 1 2 5 10 Collector Current 20 50 100 I C (mA) 4 2SC5594 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 10 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 −60° −120° −1.5 −90° Condition ; V CE = 2 V , I C = 20 mA Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.02 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) −2 −.6 −.8 −1 −1.5 Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 5 2SC5594 Sparameter ( VCE = 2 V, IC = 20 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.577 –24.5 40.31 164.2 0.00674 82.9 0.963 –11.5 200 0.560 –49.8 36.64 149.3 0.0130 74.5 0.897 –23.7 300 0.541 –72.2 32.05 136.3 0.0182 68.8 0.803 –34.4 400 0.504 –90.2 27.56 126.5 0.0225 63.6 0.708 –42.4 500 0.495 –104.5 23.84 118.8 0.0256 61.3 0.622 –48.4 600 0.477 –116.9 20.64 113.1 0.0285 58.9 0.548 –53.1 700 0.458 –126.4 18.11 108.4 0.0311 57.7 0.487 –56.2 800 0.456 –134.5 16.13 105.1 0.0336 57.3 0.437 –58.7 900 0.448 –142.5 14.46 101.6 0.0355 57.8 0.394 –60.4 1000 0.435 –147.9 13.15 99.2 0.0382 56.8 0.360 –61.9 1100 0.438 –153.6 12.01 96.6 0.0399 57.4 0.331 –63.0 1200 0.430 –158.5 11.06 94.4 0.0422 57.0 0.306 –63.3 1300 0.425 –162.6 10.24 93.0 0.0443 58.1 0.288 –63.5 1400 0.426 –166.9 9.56 91.1 0.0462 58.3 0.269 –64.0 1500 0.424 –171.1 8.99 89.6 0.0488 58.3 0.253 –64.1 1600 0.425 –174.1 8.45 88.0 0.0508 58.5 0.241 –64.1 1700 0.428 –177.4 7.98 86.6 0.0527 58.8 0.230 –64.0 1800 0.424 179.7 7.59 85.0 0.0556 58.8 0.220 –64.0 1900 0.426 176.6 7.19 83.8 0.0578 59.0 0.212 –63.9 2000 0.428 174.7 6.84 82.4 0.0595 58.8 0.204 –63.7 6 2SC5594 Package Dimensions As of January, 2001 Unit: mm 0.1 0.3 +– 0.05 0.2 0.65 0.6 1.25 ± 0.2 0.9 ± 0.1 0.1 0.4 +– 0.05 0 – 0.1 0.425 0.1 0.3 +– 0.05 + 0.1 0.16– 0.06 2.1 ± 0.3 0.65 0.65 1.25 ± 0.1 0.1 0.3 +– 0.05 0.425 2.0 ± 0.2 1.3 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK-4(T) — Conforms 0.006 g 7 2SC5594 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8