HITACHI 2SC5628

2SC5628
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
ADE-208-979A (Z)
2nd. Edition
April 2001
Features
• Super compact package;
(1.4 × 0.8 × 0.59mm)
• High power gain and low noise figure;
(PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)
Outline
MFPAK
3
1
2
Note: Marking is “XZ-”.
1. Emitter
2. Base
3. Collector
2SC5628
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10µA , IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12V , IE = 0
Collector cutoff current
I CEO
—
—
1
mA
VCE = 8V , RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5V , IC = 0
DC current transfer ratio
hFE
50
100
160
V
VCE = 1V , IC = 5mA
Collector output capacitance
Cob
—
0.55
0.85
pF
VCB = 1V , IE = 0
f = 1MHz
Gain bandwidth product
fT
6
9
—
GHz
VCE = 1V , IC = 5mA
Power gain
PG
11
14
—
dB
VCE = 1V, IC = 5mA
f = 900MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 1V, IC = 5mA
f = 900MHz
2
2SC5628
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
200
DC Current Transfer Ratio h FE
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
150
100
50
VCE = 5 V
3V
100
1V
0
50
0
100
150
200
1
10
(GHz)
0.8
0.4
0.2
0.5
1
2
5
Collector to Base Voltage V CB (V)
50
100
16
fT
1.2
0
0.1
20
Gain Bandwidth Product vs.
Collector Current
20
IE = 0
f = 1MHz
Gain Bandwidth Product
Cob (pF)
Collector Output Capacitance
Collector Output Capacitance vs.
Collector to Base Voltage
1.6
5
Collector Current I C (mA)
Ambient Temperature Ta (°C)
2.0
2
10
VCE = 3 to 5V
12
1V
8
4
0
1
2
5
10
20
50
100
Collector Current I C (mA)
3
2SC5628
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
f = 900MHz
f = 900MHz
VCE = 5 V
3V
12
1V
8
4
0
1
5
10
20
50
100
f = 1GHz
VCE = 5 V
16
2
Parameter | S 21 | (dB)
3
VCE = 1 V to 5V
2
1
3V
12
1V
8
4
0
1
2
5
10
20
50
Collector Current I C (mA)
1
2
5
10
20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
S 21
4
0
2
Collector Current I C (mA)
4
Noise Figure NF (dB)
Power Gain PG (dB)
16
100
100
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90
1.5
Scale: 5 / div.
60
120
2
.4
3
30
150
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180
0
−10
−5
−4
−.2
−3
−.4
−30
−150
−2
−.6
−.8
−1
−60
−120
−1.5
−90
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90
Scale: 0.08 / div.
.8
60
120
1
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
0
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30
−150
−3
−.4
−120
−60
−90
−2
−.6
−.8
−1
−1.5
Condition : V CE = 1 V , I C = 5mA
Condition : V CE = 1 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
5
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90
1.5
Scale: 5 / div.
60
120
2
.4
3
30
150
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180
0
−10
−5
−4
−.2
−3
−.4
−30
−150
−2
−.6
−.8
−1
−60
−120
−1.5
−90
Condition : V CE = 3 V , I C = 5mA
Condition : V CE = 3 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90
Scale: 0.08 / div.
.8
60
120
1
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
0
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30
−150
−3
−.4
−120
6
−60
−90
−2
−.6
−.8
−1
−1.5
Condition : V CE = 3 V , I C = 5mA
Condition : V CE = 3 V , I C = 5mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
2SC5628
Sparameter (VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.815
–46.1
13.63
152.2
0.0509
67.0
0.882
–32.5
200
0.734
–84.6
10.68
130.6
0.0834
51.0
0.695
–58.5
300
0.692
–111.2
8.23
116.8
0.0998
42.9
0.550
–76.0
400
0.665
–127.4
6.58
107.9
0.108
39.5
0.459
–88.5
500
0.650
–139.6
5.44
101.4
0.114
38.0
0.399
–98.1
600
0.644
–148.8
4.61
96.3
0.120
38.3
0.360
–105.7
700
0.640
–155.6
4.03
92.2
0.124
39.0
0.333
–112.2
800
0.641
–161.6
3.56
88.6
0.128
39.9
0.315
–117.8
900
0.638
–166.9
3.20
85.3
0.134
41.8
0.301
–122.4
1000
0.638
–171.6
2.90
82.2
0.138
43.5
0.292
–126.7
1100
0.643
–175.1
2.66
79.6
0.143
44.4
0.286
–130.2
1200
0.643
–178.5
2.46
77.2
0.149
46.2
0.280
–133.6
1300
0.648
178.5
2.28
74.9
0.154
47.8
0.279
–135.6
1400
0.651
175.4
2.15
72.8
0.161
49.1
0.278
–138.6
1500
0.658
173.2
2.03
70.5
0.168
50.9
0.277
–140.9
1600
0.663
170.0
1.92
68.5
0.174
51.8
0.279
–143.3
1700
0.667
167.2
1.82
66.7
0.182
53.2
0.281
–145.0
1800
0.669
165.0
1.74
64.4
0.189
54.6
0.282
–147.1
1900
0.673
163.1
1.67
63.2
0.196
55.5
0.286
–149.3
2000
0.682
161.0
1.60
61.4
0.204
56.4
0.289
–150.6
7
2SC5628
Sparameter (VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.826
–39.3
14.04
155.5
0.0412
69.9
0.906
–25.8
200
0.746
–74.6
11.47
134.9
0.0700
54.9
0.738
–47.3
300
0.685
–100.5
9.14
121.1
0.0864
46.7
0.591
–61.9
400
0.646
–117.4
7.41
111.9
0.0950
43.0
0.490
–71.9
500
0.627
–130.7
6.19
104.8
0.101
41.3
0.419
–79.9
600
0.617
–141.0
5.27
99.6
0.107
41.3
0.369
–85.7
700
0.606
–149.0
4.61
95.0
0.111
41.6
0.333
–90.7
800
0.598
–155.4
4.09
91.6
0.115
42.5
0.307
–95.3
900
0.605
–161.3
3.67
87.7
0.120
44.3
0.287
–99.0
1000
0.604
–166.1
3.35
84.7
0.124
45.6
0.273
–102.6
1100
0.604
–170.6
3.06
81.8
0.129
46.8
0.262
–106.0
1200
0.607
–174.2
2.83
79.5
0.134
49.0
0.253
–108.8
1300
0.605
–178.2
2.62
77.1
0.139
50.4
0.249
–111.0
1400
0.608
178.9
2.47
74.9
0.145
51.9
0.245
–114.3
1500
0.618
175.5
2.32
72.7
0.152
53.4
0.242
–116.6
1600
0.622
172.4
2.19
70.7
0.157
54.8
0.241
–118.9
1700
0.627
170.0
2.08
68.9
0.164
56.2
0.241
–121.3
1800
0.629
166.9
1.99
66.7
0.171
57.6
0.242
–123.4
1900
0.633
164.3
1.90
65.2
0.177
58.7
0.243
–125.9
2000
0.641
162.3
1.82
63.4
0.186
59.5
0.245
–127.7
8
2SC5628
Package Dimensions
0.15 +0.1
–0.05
(0.1)
3-0.2 +0.1
-0.05
0.45
0.45
(0.1)
0.2
0.8 ± 0.1
1.4 ± 0.05
0.9 ± 0.1
0.6 MAX
1.2 ± 0.05
0.2
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MFPAK
—
—
0.0016 g
9
2SC5628
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
10