2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is “JR”. 2SC5631 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1.5 V Collector current IC 80 mA Collector power dissipation Pc 800* mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C * When using alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 15 — — V I C = 10 µA , IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 12 V , IE = 0 Collector cutoff current I CEO — — 1 mA VCE = 6 V , RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1.5 V , IC = 0 DC current transfer ratio hFE 80 120 160 V VCE = 5 V , IC = 50 mA Collector output capacitance Cob — 1.6 2.2 pF VCB = 5 V , IE = 0 f = 1 MHz Gain bandwidth product fT 8 11 — GHz VCE = 5 V , IC = 50 mA f = 1 GHz Power gain PG 7 10 — dB VCE = 5 V , IC = 50 mA f = 900 MHz Noise figure NF — 1.2 1.9 dB VCE = 5 V , IC = 5 mA f = 900 MHz 2 2SC5631 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 hFE 1600 DC Current Transfer Ratio 1200 800 400 100 150 Ambient Temperature (pF) 100 3V 0 50 0 200 1 IE = 0 f = 1MHz 3.2 5 10 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 4.0 2 20 50 IC (mA) 100 Gain Bandwidth Product vs. Collector Current 20 16 Gain Bandwidth Prodfuct Collector Output Capacitance fT Cob VCE = 5 V (GHz) Collector Power Dissipation Pc (mW) Collector Power Dissipation Curve 2.4 1.6 0.8 0 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 10 VCB (V) 12 VCE = 5 V 8 3V 4 0 1 2 5 10 Collector Current 20 50 100 I C (mA) 3 2SC5631 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 8 VCE = 5 V 3V 4 0 1 5 10 20 50 100 f = 1GHz 16 2 |S21| (dB) 3 VCE = 3 V 2 5V 1 12 VCE = 5 V 8 3V 4 0 1 2 5 10 Collector Current 20 50 I C (mA) 1 2 5 10 Collector Current I C (mA) S21Parameter vs. Collector Current 20 S21 Parameter 4 0 2 Collector Current 4 Noise Figure PG 12 NF (dB) f = 900MHz 16 Power Gain (dB) f = 900MHz 100 20 50 I C (mA) 100 2SC5631 S21 Paramter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90 1.5 Scale: 6 / div. 60 120 2 .4 3 30 150 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180 0 −10 −5 −4 −.2 −3 −.4 −30 −150 −2 −.6 −.8 −1 −60 −120 −1.5 −90 Condition : V CE = 3 V , I C = 50 mA Condition : V CE = 3 V , I C = 50 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90 Scale: 0.1 / div. .8 60 120 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30 −150 −3 −.4 −120 −60 −90 −2 −.6 −.8 −1 −1.5 Condition : V CE = 3 V , I C = 50 mA Condition : V CE = 3 V , I C = 50 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) 5 2SC5631 S21 Paramter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90 1.5 Scale: 6 / div. 60 120 2 .4 3 30 150 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180 0 −10 −5 −4 −.2 −3 −.4 −30 −150 −2 −.6 −.8 −1 −60 −120 −1.5 −90 Condition : V CE = 5 V , I C = 50 mA Condition : V CE = 5 V , I C = 50 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90 Scale: 0.1 / div. .8 60 120 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30 −150 −3 −.4 −120 6 −60 −90 −2 −.6 −.8 −1 −1.5 Condition : V CE = 5 V , I C = 50 mA Condition : V CE = 5 V , I C = 50 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) 2SC5631 Sparameter ( VCE = 3V, IC = 50 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.234 –135.7 26.57 109.9 0.0299 75.5 0.353 –77.7 200 0.233 –165.2 13.47 96.1 0.0575 78.0 0.199 –99.6 300 0.234 179.3 8.92 89.7 0.0863 77.8 0.153 –112.5 400 0.238 170.1 6.70 84.9 0.114 76.9 0.135 –121.8 500 0.242 161.2 5.37 81.2 0.142 75.4 0.127 –128.3 600 0.249 153.9 4.52 77.8 0.169 73.9 0.124 –133.5 700 0.250 145.9 3.89 74.5 0.196 72.2 0.125 –138.0 800 0.259 140.4 3.43 71.4 0.223 70.4 0.126 –141.3 900 0.267 134.2 3.08 68.6 0.249 68.4 0.128 –145.0 1000 0.274 128.0 2.80 65.8 0.275 66.9 0.131 –147.7 1100 0.282 123.5 2.58 63.2 0.299 65.0 0.136 –150.3 1200 0.290 119.2 2.40 60.3 0.323 63.2 0.140 –153.0 1300 0.297 114.2 2.25 57.9 0.346 61.3 0.144 –155.6 1400 0.307 109.6 2.12 55.9 0.367 59.7 0.149 –158.1 1500 0.318 105.3 2.01 53.4 0.389 57.8 0.153 –160.5 1600 0.324 101.7 1.92 51.3 0.409 56.2 0.159 –162.7 1700 0.334 97.7 1.83 48.6 0.430 54.4 0.163 –165.1 1800 0.345 93.9 1.77 46.8 0.448 52.8 0.170 –167.9 1900 0.357 91.6 1.72 44.6 0.468 50.9 0.174 –170.2 2000 0.366 87.9 1.65 42.6 0.485 49.5 0.180 –172.6 7 2SC5631 Sparameter ( VCE = 5V, IC = 50 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.205 –123.9 28.04 110.8 0.0284 74.9 0.360 –69.1 200 0.193 –159.6 14.24 96.9 0.0547 78.2 0.197 –84.5 300 0.190 –177.1 9.44 90.2 0.0820 78.3 0.145 –92.5 400 0.193 169.9 7.09 85.3 0.109 77.5 0.123 –99.0 500 0.201 162.0 5.68 81.8 0.135 76.3 0.112 –104.1 600 0.206 153.7 4.76 78.4 0.162 74.6 0.107 –109.5 700 0.206 145.4 4.11 75.1 0.188 72.9 0.105 –113.7 800 0.221 139.0 3.62 72.2 0.213 71.3 0.105 –117.6 900 0.224 132.6 3.25 69.4 0.238 69.4 0.106 –121.8 1000 0.234 126.8 2.94 66.6 0.262 67.8 0.110 –125.4 1100 0.243 120.8 2.72 64.0 0.286 66.0 0.113 –128.7 1200 0.249 116.8 2.53 61.3 0.309 64.3 0.117 –132.0 1300 0.261 111.3 2.36 59.0 0.331 62.5 0.120 –135.5 1400 0.270 107.4 2.23 56.9 0.353 60.9 0.125 –138.7 1500 0.280 103.5 2.10 54.5 0.373 59.1 0.129 –142.0 1600 0.285 99.1 2.01 52.1 0.393 57.6 0.135 –144.9 1700 0.298 95.4 1.92 50.3 0.414 56.0 0.139 –148.1 1800 0.312 91.8 1.84 47.6 0.431 54.3 0.145 –151.3 1900 0.321 87.9 1.79 45.7 0.450 52.5 0.148 –154.5 2000 0.330 85.6 1.71 43.8 0.467 51.4 0.155 –157.5 8 2SC5631 Package Dimensions As of January, 2001 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Mass (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g 9 2SC5631 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 10