HITACHI 2SC5631

2SC5631
Silicon NPN Epitaxial
UHF / VHF Wide Band Amplifier
ADE-208-981A (Z)
2nd. Edition
Mar. 2001
Features
• High gain bandwidth product
fT = 11 GHz typ.
• High power gain and low noise figure ;
PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz
Outline
UPAK
3
2
1
4
1. Base
2. Collector
3. Emitter
4. Collector
Note: Marking is “JR”.
2SC5631
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
6
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
80
mA
Collector power dissipation
Pc
800*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
* When using alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA , IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V , IE = 0
Collector cutoff current
I CEO
—
—
1
mA
VCE = 6 V , RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V , IC = 0
DC current transfer ratio
hFE
80
120
160
V
VCE = 5 V , IC = 50 mA
Collector output capacitance
Cob
—
1.6
2.2
pF
VCB = 5 V , IE = 0
f = 1 MHz
Gain bandwidth product
fT
8
11
—
GHz
VCE = 5 V , IC = 50 mA
f = 1 GHz
Power gain
PG
7
10
—
dB
VCE = 5 V , IC = 50 mA
f = 900 MHz
Noise figure
NF
—
1.2
1.9
dB
VCE = 5 V , IC = 5 mA
f = 900 MHz
2
2SC5631
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
hFE
1600
DC Current Transfer Ratio
1200
800
400
100
150
Ambient Temperature
(pF)
100
3V
0
50
0
200
1
IE = 0
f = 1MHz
3.2
5
10
Collector Current
Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
4.0
2
20
50
IC
(mA)
100
Gain Bandwidth Product vs.
Collector Current
20
16
Gain Bandwidth Prodfuct
Collector Output Capacitance
fT
Cob
VCE = 5 V
(GHz)
Collector Power Dissipation
Pc (mW)
Collector Power Dissipation Curve
2.4
1.6
0.8
0
0.1
0.2
0.5
1
2
Collector to Base Voltage
5
10
VCB (V)
12
VCE = 5 V
8
3V
4
0
1
2
5
10
Collector Current
20
50
100
I C (mA)
3
2SC5631
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
8
VCE = 5 V
3V
4
0
1
5
10
20
50
100
f = 1GHz
16
2
|S21| (dB)
3
VCE = 3 V
2
5V
1
12
VCE = 5 V
8
3V
4
0
1
2
5
10
Collector Current
20
50
I C (mA)
1
2
5
10
Collector Current
I C (mA)
S21Parameter vs. Collector Current
20
S21 Parameter
4
0
2
Collector Current
4
Noise Figure
PG
12
NF (dB)
f = 900MHz
16
Power Gain
(dB)
f = 900MHz
100
20
50
I C (mA)
100
2SC5631
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90
1.5
Scale: 6 / div.
60
120
2
.4
3
30
150
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180
0
−10
−5
−4
−.2
−3
−.4
−30
−150
−2
−.6
−.8
−1
−60
−120
−1.5
−90
Condition : V CE = 3 V , I C = 50 mA
Condition : V CE = 3 V , I C = 50 mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90
Scale: 0.1 / div.
.8
60
120
1
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
0
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30
−150
−3
−.4
−120
−60
−90
−2
−.6
−.8
−1
−1.5
Condition : V CE = 3 V , I C = 50 mA
Condition : V CE = 3 V , I C = 50 mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
5
2SC5631
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90
1.5
Scale: 6 / div.
60
120
2
.4
3
30
150
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180
0
−10
−5
−4
−.2
−3
−.4
−30
−150
−2
−.6
−.8
−1
−60
−120
−1.5
−90
Condition : V CE = 5 V , I C = 50 mA
Condition : V CE = 5 V , I C = 50 mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90
Scale: 0.1 / div.
.8
60
120
1
.6
1.5
2
.4
3
30
150
4
5
.2
10
180
0
.2
0
.4
.6 .8 1
1.5 2
3 45
10
−10
−5
−4
−.2
−30
−150
−3
−.4
−120
6
−60
−90
−2
−.6
−.8
−1
−1.5
Condition : V CE = 5 V , I C = 50 mA
Condition : V CE = 5 V , I C = 50 mA
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
2SC5631
Sparameter ( VCE = 3V, IC = 50 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.234
–135.7
26.57
109.9
0.0299
75.5
0.353
–77.7
200
0.233
–165.2
13.47
96.1
0.0575
78.0
0.199
–99.6
300
0.234
179.3
8.92
89.7
0.0863
77.8
0.153
–112.5
400
0.238
170.1
6.70
84.9
0.114
76.9
0.135
–121.8
500
0.242
161.2
5.37
81.2
0.142
75.4
0.127
–128.3
600
0.249
153.9
4.52
77.8
0.169
73.9
0.124
–133.5
700
0.250
145.9
3.89
74.5
0.196
72.2
0.125
–138.0
800
0.259
140.4
3.43
71.4
0.223
70.4
0.126
–141.3
900
0.267
134.2
3.08
68.6
0.249
68.4
0.128
–145.0
1000
0.274
128.0
2.80
65.8
0.275
66.9
0.131
–147.7
1100
0.282
123.5
2.58
63.2
0.299
65.0
0.136
–150.3
1200
0.290
119.2
2.40
60.3
0.323
63.2
0.140
–153.0
1300
0.297
114.2
2.25
57.9
0.346
61.3
0.144
–155.6
1400
0.307
109.6
2.12
55.9
0.367
59.7
0.149
–158.1
1500
0.318
105.3
2.01
53.4
0.389
57.8
0.153
–160.5
1600
0.324
101.7
1.92
51.3
0.409
56.2
0.159
–162.7
1700
0.334
97.7
1.83
48.6
0.430
54.4
0.163
–165.1
1800
0.345
93.9
1.77
46.8
0.448
52.8
0.170
–167.9
1900
0.357
91.6
1.72
44.6
0.468
50.9
0.174
–170.2
2000
0.366
87.9
1.65
42.6
0.485
49.5
0.180
–172.6
7
2SC5631
Sparameter ( VCE = 5V, IC = 50 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.205
–123.9
28.04
110.8
0.0284
74.9
0.360
–69.1
200
0.193
–159.6
14.24
96.9
0.0547
78.2
0.197
–84.5
300
0.190
–177.1
9.44
90.2
0.0820
78.3
0.145
–92.5
400
0.193
169.9
7.09
85.3
0.109
77.5
0.123
–99.0
500
0.201
162.0
5.68
81.8
0.135
76.3
0.112
–104.1
600
0.206
153.7
4.76
78.4
0.162
74.6
0.107
–109.5
700
0.206
145.4
4.11
75.1
0.188
72.9
0.105
–113.7
800
0.221
139.0
3.62
72.2
0.213
71.3
0.105
–117.6
900
0.224
132.6
3.25
69.4
0.238
69.4
0.106
–121.8
1000
0.234
126.8
2.94
66.6
0.262
67.8
0.110
–125.4
1100
0.243
120.8
2.72
64.0
0.286
66.0
0.113
–128.7
1200
0.249
116.8
2.53
61.3
0.309
64.3
0.117
–132.0
1300
0.261
111.3
2.36
59.0
0.331
62.5
0.120
–135.5
1400
0.270
107.4
2.23
56.9
0.353
60.9
0.125
–138.7
1500
0.280
103.5
2.10
54.5
0.373
59.1
0.129
–142.0
1600
0.285
99.1
2.01
52.1
0.393
57.6
0.135
–144.9
1700
0.298
95.4
1.92
50.3
0.414
56.0
0.139
–148.1
1800
0.312
91.8
1.84
47.6
0.431
54.3
0.145
–151.3
1900
0.321
87.9
1.79
45.7
0.450
52.5
0.148
–154.5
2000
0.330
85.6
1.71
43.8
0.467
51.4
0.155
–157.5
8
2SC5631
Package Dimensions
As of January, 2001
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
9
2SC5631
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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URL
NorthAmerica
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:
:
:
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10