HITACHI 2SC4988

2SC4988
Silicon NPN Epitaxial
ADE-208-004
1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 8.5 GHz Typ
• High gain, low noise figure
PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC4988
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
9
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
100
mA
1
Collector power dissipation
PC
800*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
mW
1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 9 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
1.1
1.6
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
5.5
8.5
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
7.5
10.5
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.3
2.5
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
VCE = 5 V, IC = 20 mA
Note: Marking is “FR”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC4988
DC Current Transfer Ratio
vs. Collector Current
1600
200
DC Current Transfer Ratio h FE
Collector Power Dissipation Pc (mW)
(on the alumina ceramic board)
Collector Power Dissipation Curve
VCE = 5V
160
1200
120
800
400
80
40
0
0
50
100
150
200
1
Ambient Temperature Ta (°C)
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product f T (GHz)
12
VCE = 5 V
10
8
6
4
2
0
2
5
10
20
50
Collector Current I C (mA)
100
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product
vs. Collector Current
1
50
2
5
10
20
Collector Current I C (mA)
100
1.8
IE = 0
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.5
1
2
5
10
20
Collector to Base Voltage V CB (V)
3
2SC4988
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
5
VCE = 5V
f = 900 MHz
VCE = 5V
f = 900MHz
NF (dB)
Power Gain PG (dB)
16
Noise Figure
12
8
4
0
4
3
2
1
0
1
2
5
10
20
50
Collector Current I C (mA)
100
1
2
5
10
20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
|S21 | (dB)
VCE = 5V
f = 1 GHz
16
S 21 Parameter
12
8
4
0
1
4
2
5
10
20
50
Collector Current I C (mA)
100
100
2SC4988
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
1
90°
.8
1.5
.6
Scale: 5 / div.
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.01 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
5
2SC4988
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.555
–66.6
9.68
124.7
0.0717
62.3
0.672
–39.7
400
0.328
–102.5
5.98
102.2
0.106
59.4
0.462
–49.8
600
0.225
–133.1
4.24
89.3
0.138
60.8
0.371
–53.4
800
0.185
–160.5
3.31
80.3
0.170
61.4
0.326
–56.4
1000
0.172
170.5
2.71
72.4
0.204
61.3
0.301
–59.9
1200
0.179
148.5
2.34
65.8
0.237
60.7
0.285
–63.6
1400
0.200
131.7
2.06
59.9
0.270
59.5
0.276
–68.2
1600
0.224
120.0
1.86
54.4
0.303
58.1
0.268
–73.2
1800
0.253
108.7
1.71
49.6
0.334
56.4
0.262
–78.7
2000
0.277
99.8
1.58
44.9
0.365
54.5
0.256
–84.7
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.220
–101.8
13.13
106.0
0.0532
71.5
0.401
–48.6
400
0.135
–149.0
7.08
90.8
0.0946
73.6
0.277
–49.0
600
0.120
175.1
4.83
82.2
0.137
72.6
0.239
–50.1
800
0.132
148.0
3.70
75.5
0.178
70.8
0.221
–53.4
1000
0.155
129.6
3.02
69.5
0.220
68.2
0.212
–57.9
1200
0.174
117.3
2.58
63.9
0.258
65.6
0.205
–63.1
1400
0.196
105.5
2.26
58.8
0.296
62.9
0.201
–69.1
1600
0.225
97.8
2.04
54.1
0.331
60.3
0.197
–75.7
1800
0.246
92.0
1.86
50.0
0.364
57.5
0.193
–82.1
2000
0.267
84.5
1.72
45.7
0.397
54.7
0.190
–89.4
6
S21
S12
S22
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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URL
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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