HITACHI 2SC4995

2SC4995
Silicon NPN Epitaxial
ADE-208-013
1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC4995
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltge
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.55
1.05
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
8.0
11.0
—
GHz
VCE = 5 V, IC = 20 mA
S21 Parameter
|S21|
—
16
—
dB
VCE = 5 V, IC = 20 mA,
f = 1000 MHz
Power gain
PG
13.5
16.5
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
VCE = 5 V, IC = 20 mA
Note: Marking is “YD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC4995
DC Current Transfer Ratio
vs. Collector Current
200
DC Current Transfer Ratio h FE
100
VCE = 5V
160
80
120
60
40
20
0
80
40
0
1
50
100
150
Ambient Temperature Ta (°C)
Collector Output Capacitance Cob (pF)
12
VCE = 5 V
10
8
VCE = 1 V
6
4
2
0
1
2
5
10
20
Collector Current I C (mA)
2
5
10
20
Collector Current I C (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product
vs. Collector Current
Gain Bandwidth Product f T (GHz)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
120
50
0.9
IE = 0
f = 1 MHz
0.8
0.7
0.6
0.5
0.4
0.5
1
2
5
10
20
Collector to Base Voltage V CB (V)
3
2SC4995
Noise Figure vs. Collector Current
Power Gain vs. Collector Current
20
5
VCE = 5V
f = 900MHz
VCE = 5V
f = 900 MHz
NF (dB)
Power Gain PG (dB)
16
Noise Figure
12
8
4
0
4
3
2
1
0
1
2
5
10
20
Collector Current I C (mA)
50
1
5
10
20
2
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
(dB)
f = 1 GHz
VCE = 5V
|S21 |
16
S 21 Parameter
12
VCE = 1V
8
4
0
1
4
2
5
10
20
Collector Current I C (mA)
50
50
2SC4995
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
Scale: 5 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
5
2SC4995
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
Scale: 5 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
6
–2
–.6
–.8
–1
–1.5
Condition: V CE = 1 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
2SC4995
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.781
–48.2
12.84
148.8
0.0449
64.6
0.866
–28.6
400
0.669
–83.6
10.04
127.3
0.0695
50.3
0.682
–46.9
600
0.591
–109.4
7.84
113.9
0.0815
42.6
0.541
–58.1
800
0.549
–129.1
6.30
104.4
0.0889
39.2
0.446
–65.2
1000
0.524
–145.0
5.23
96.7
0.0937
38.4
0.381
–70.4
1200
0.520
–156.8
4.45
90.7
0.0986
37.7
0.340
–74.6
1400
0.515
–166.9
3.86
86.0
0.103
38.7
0.309
–77.7
1600
0.518
–176.0
3.44
81.1
0.107
40.0
0.287
–81.2
1800
0.523
176.5
3.11
77.3
0.111
41.2
0.268
–85.1
2000
0.537
170.1
2.82
73.5
0.116
42.4
0.256
–89.0
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.542
–69.9
24.74
128.7
0.0296
55.5
0.631
–52.5
400
0.520
–136.2
15.31
109.4
0.0398
50.2
0.395
–72.9
600
0.516
–156.3
10.81
99.5
0.0470
52.8
0.285
–83.6
800
0.519
–169.1
8.29
93.5
0.0547
55.1
0.225
–91.3
1000
0.525
–179.2
6.70
88.5
0.0624
57.9
0.189
–97.5
1200
0.538
173.6
5.63
84.1
0.0712
60.2
0.166
–102.8
1400
0.540
167.5
4.85
80.9
0.0805
61.5
0.151
–107.9
1600
0.554
161.6
4.29
77.5
0.0895
62.8
0.140
–112.6
1800
0.567
159.5
3.86
74.3
0.0991
63.8
0.134
–118.1
2000
0.580
151.7
3.48
71.6
0.109
64.3
0.129
–122.5
7
2SC4995
S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.739
–65.4
11.99
140.8
0.0681
56.9
0.793
–44.9
400
0.643
–106.5
8.54
118.9
0.0957
41.5
0.576
–72.1
600
0.603
–132.0
6.34
106.4
0.107
34.9
0.446
–89.4
800
0.586
–148.7
4.99
97.9
0.114
32.6
0.369
–101.9
1000
0.578
–162.1
4.08
90.9
0.118
32.6
0.323
–112.0
1200
0.580
–171.9
3.45
86.0
0.124
32.7
0.396
–120.1
1400
0.588
179.9
2.99
81.7
0.129
33.3
0.275
–127.0
1600
0.596
172.9
2.67
77.2
0.134
34.3
0.263
–133.0
1800
0.607
166.8
2.41
73.4
0.139
35.9
0.256
–139.5
2000
0.617
161.0
2.20
70.0
0.145
36.9
0.254
–144.7
S Parameter (VCE = 1 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.588
–127.7
19.25
119.0
0.0389
47.2
0.527
–86.7
400
0.618
–157.6
11.00
102.5
0.0483
45.3
0.380
–120.8
600
0.627
–171.4
7.62
94.6
0.0570
49.0
0.334
–139.3
800
0.639
179.6
5.80
89.2
0.0662
52.6
0.315
–150.9
1000
0.650
172.1
4.66
84.5
0.0768
55.9
0.306
–158.9
1200
0.656
–166.4
3.94
81.1
0.873
57.7
0.302
–165.4
1400
0.664
160.7
3.40
78.2
0.0996
59.2
0.301
–170.5
1600
0.677
156.5
3.03
75.2
0.110
60.2
0.301
–174.6
1800
0.689
151.6
2.71
71.9
0.122
61.1
0.304
–178.4
2000
0.696
147.5
2.47
69.2
0.134
61.2
0.306
178.2
8
S21
S12
S22
Unit: mm
0.1
0.3 +– 0.05
0.2
0.65 0.6
1.25 ± 0.2
0.9 ± 0.1
0.1
0.4 +– 0.05
0 – 0.1
0.425
0.1
0.3 +– 0.05
+ 0.1
0.16– 0.06
2.1 ± 0.3
0.65 0.65
1.25 ± 0.1
0.1
0.3 +– 0.05
0.425
2.0 ± 0.2
1.3 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CMPAK-4(T)
—
Conforms
0.006 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http://www.hitachi.co.jp/Sicd/indx.htm
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