2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4995 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltge V(BR)CBO 15 — — V I C = 10 µA, IE = 0 Collector cutoff current I CBO — — 10 µA VCB = 12 V, IE = 0 I CEO — — 1 mA VCE = 8 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 120 250 Collector output capacitance Cob — 0.55 1.05 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 8.0 11.0 — GHz VCE = 5 V, IC = 20 mA S21 Parameter |S21| — 16 — dB VCE = 5 V, IC = 20 mA, f = 1000 MHz Power gain PG 13.5 16.5 — dB VCE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF — 1.1 2.0 dB VCE = 5 V, IC = 5 mA, f = 900 MHz VCE = 5 V, IC = 20 mA Note: Marking is “YD–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 2SC4995 DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE 100 VCE = 5V 160 80 120 60 40 20 0 80 40 0 1 50 100 150 Ambient Temperature Ta (°C) Collector Output Capacitance Cob (pF) 12 VCE = 5 V 10 8 VCE = 1 V 6 4 2 0 1 2 5 10 20 Collector Current I C (mA) 2 5 10 20 Collector Current I C (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (GHz) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 120 50 0.9 IE = 0 f = 1 MHz 0.8 0.7 0.6 0.5 0.4 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC4995 Noise Figure vs. Collector Current Power Gain vs. Collector Current 20 5 VCE = 5V f = 900MHz VCE = 5V f = 900 MHz NF (dB) Power Gain PG (dB) 16 Noise Figure 12 8 4 0 4 3 2 1 0 1 2 5 10 20 Collector Current I C (mA) 50 1 5 10 20 2 Collector Current I C (mA) S21 Parameter vs. Collector Current 20 (dB) f = 1 GHz VCE = 5V |S21 | 16 S 21 Parameter 12 VCE = 1V 8 4 0 1 4 2 5 10 20 Collector Current I C (mA) 50 50 2SC4995 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency Scale: 5 / div. 90° 1.5 .6 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) –2 –.6 –.8 –1 –1.5 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 5 2SC4995 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 Scale: 5 / div. 90° 1.5 .6 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 6 –2 –.6 –.8 –1 –1.5 Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 2SC4995 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.781 –48.2 12.84 148.8 0.0449 64.6 0.866 –28.6 400 0.669 –83.6 10.04 127.3 0.0695 50.3 0.682 –46.9 600 0.591 –109.4 7.84 113.9 0.0815 42.6 0.541 –58.1 800 0.549 –129.1 6.30 104.4 0.0889 39.2 0.446 –65.2 1000 0.524 –145.0 5.23 96.7 0.0937 38.4 0.381 –70.4 1200 0.520 –156.8 4.45 90.7 0.0986 37.7 0.340 –74.6 1400 0.515 –166.9 3.86 86.0 0.103 38.7 0.309 –77.7 1600 0.518 –176.0 3.44 81.1 0.107 40.0 0.287 –81.2 1800 0.523 176.5 3.11 77.3 0.111 41.2 0.268 –85.1 2000 0.537 170.1 2.82 73.5 0.116 42.4 0.256 –89.0 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.542 –69.9 24.74 128.7 0.0296 55.5 0.631 –52.5 400 0.520 –136.2 15.31 109.4 0.0398 50.2 0.395 –72.9 600 0.516 –156.3 10.81 99.5 0.0470 52.8 0.285 –83.6 800 0.519 –169.1 8.29 93.5 0.0547 55.1 0.225 –91.3 1000 0.525 –179.2 6.70 88.5 0.0624 57.9 0.189 –97.5 1200 0.538 173.6 5.63 84.1 0.0712 60.2 0.166 –102.8 1400 0.540 167.5 4.85 80.9 0.0805 61.5 0.151 –107.9 1600 0.554 161.6 4.29 77.5 0.0895 62.8 0.140 –112.6 1800 0.567 159.5 3.86 74.3 0.0991 63.8 0.134 –118.1 2000 0.580 151.7 3.48 71.6 0.109 64.3 0.129 –122.5 7 2SC4995 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.739 –65.4 11.99 140.8 0.0681 56.9 0.793 –44.9 400 0.643 –106.5 8.54 118.9 0.0957 41.5 0.576 –72.1 600 0.603 –132.0 6.34 106.4 0.107 34.9 0.446 –89.4 800 0.586 –148.7 4.99 97.9 0.114 32.6 0.369 –101.9 1000 0.578 –162.1 4.08 90.9 0.118 32.6 0.323 –112.0 1200 0.580 –171.9 3.45 86.0 0.124 32.7 0.396 –120.1 1400 0.588 179.9 2.99 81.7 0.129 33.3 0.275 –127.0 1600 0.596 172.9 2.67 77.2 0.134 34.3 0.263 –133.0 1800 0.607 166.8 2.41 73.4 0.139 35.9 0.256 –139.5 2000 0.617 161.0 2.20 70.0 0.145 36.9 0.254 –144.7 S Parameter (VCE = 1 V, IC = 20 mA, ZO = 50 Ω) Freq. S11 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.588 –127.7 19.25 119.0 0.0389 47.2 0.527 –86.7 400 0.618 –157.6 11.00 102.5 0.0483 45.3 0.380 –120.8 600 0.627 –171.4 7.62 94.6 0.0570 49.0 0.334 –139.3 800 0.639 179.6 5.80 89.2 0.0662 52.6 0.315 –150.9 1000 0.650 172.1 4.66 84.5 0.0768 55.9 0.306 –158.9 1200 0.656 –166.4 3.94 81.1 0.873 57.7 0.302 –165.4 1400 0.664 160.7 3.40 78.2 0.0996 59.2 0.301 –170.5 1600 0.677 156.5 3.03 75.2 0.110 60.2 0.301 –174.6 1800 0.689 151.6 2.71 71.9 0.122 61.1 0.304 –178.4 2000 0.696 147.5 2.47 69.2 0.134 61.2 0.306 178.2 8 S21 S12 S22 Unit: mm 0.1 0.3 +– 0.05 0.2 0.65 0.6 1.25 ± 0.2 0.9 ± 0.1 0.1 0.4 +– 0.05 0 – 0.1 0.425 0.1 0.3 +– 0.05 + 0.1 0.16– 0.06 2.1 ± 0.3 0.65 0.65 1.25 ± 0.1 0.1 0.3 +– 0.05 0.425 2.0 ± 0.2 1.3 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) CMPAK-4(T) — Conforms 0.006 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.