2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 1.5 V Collector current IC 20 mA Collector power dissipation PC 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Marking is “ZC–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current I CBO — — 10 µA VCB = 15 V, IE = 0 I CEO — — 1 mA VCE = 8 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 50 100 160 Collector output capacitance Cob — 0.3 0.8 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 9 12 — GHz VCE = 5 V, IC = 5 mA Power gain PG 14 16.5 — dB VCE = 5 V, IC = 10 mA, f = 900 MHz Noise figure NF — 1.6 2.5 dB VCE = 5 V, IC = 5 mA, f = 900 MHz 2 VCE = 5 V, IC = 10 mA 2SC5246 DC Current Transfer Ratio vs. Collector Current Collector Power Dissipation Curve 200 DC Current Transfer Ratio h FE Collector Power Dissipation Pc (mW) 160 120 80 40 0 50 100 150 Ambient Temperature Ta (°C) Collector Output Capacitance Cob (pF) Gain Bandwidth Product f T (GHz) VCE = 5V 1V 8 4 0 1 10 20 2 5 50 Collector Current I C (mA) 80 40 VCE = 5 V Pulse Test 0.1 1 10 100 Collector Current I C (mA) 16 12 120 0 0.01 200 Gain Bandwidth Product vs. Collector Current 20 160 100 1.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5246 20 Power Gain vs. Collector Current f = 900 MHz 16 12 8 Noise Figure vs. Collector Current VCE = 5V Noise Figure NF (dB) Power Gain PG (dB) f = 900 MHz 10 VCE = 1V 4 8 6 VCE = 1V 4 2 VCE = 5V 0 0.1 0.2 4 0.5 1 2 5 10 20 Collector Current I C (mA) 50 0 0.1 0.2 0.5 1 2 5 10 20 Collector Current I C (mA) 50 2SC5246 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 90° 1.5 .6 Scale: 3 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –30° –150° –3 –.4 –2 –.6 –.8 –1 –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) –2 –.6 –.8 –1 –1.5 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 5 2SC5246 S11 Parameter vs. Frequency .8 1 .6 S21 Parameter vs. Frequency 90° 1.5 Scale: 2 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 6 –2 –.6 –.8 –1 –1.5 Condition: V CE = 1 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 2SC5246 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.793 –18.9 9.98 161 0.026 78.6 0.955 –12.0 400 0.702 –36.0 8.88 144 0.047 70.2 0.864 –22.7 600 0.594 –49.4 7.63 131 0.063 64.6 0.768 –30.3 800 0.495 –59.9 6.54 120 0.074 62.4 0.684 –34.8 1000 0.415 –69.1 5.65 112 0.085 61.1 0.620 –38.0 1200 0.349 –76.8 4.94 105 0.093 60.5 0.572 –40.1 1400 0.293 –83.0 4.37 99.4 0.102 61.3 0.535 –42.0 1600 0.241 –90.2 3.93 94.7 0.110 61.7 0.508 –43.7 1800 0.214 –93.9 3.57 90.2 0.119 61.9 0.486 –45.0 2000 0.181 –103 3.28 89.3 0.127 63.4 0.469 –46.4 S Parameter (VCE = 5 V, IC = 10 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.679 –26.4 13.2 155 0.024 76.2 0.924 –14.6 400 0.552 –48.9 10.8 135 0.041 69.0 0.794 –25.1 600 0.445 –64.5 8.71 121 0.054 64.8 0.687 –30.6 800 0.342 –76.7 7.12 111 0.064 64.5 0.611 –33.3 1000 0.283 –88.1 5.99 104 0.073 64.5 0.559 –34.9 1200 0.228 –98.3 5.15 97.8 0.083 65.7 0.526 –36.0 1400 0.191 –105 4.50 93.0 0.092 66.8 0.501 –37.3 1600 0.166 –119 4.01 88.6 0.102 67.9 0.483 –38.5 1800 0.136 –124 3.62 84.6 0.112 68.3 0.470 –40.1 2000 0.123 –140 3.31 81.1 0.122 69.5 0.460 –41.3 7 2SC5246 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.764 –23.4 9.82 159 0.028 77.1 0.938 –13.7 400 0.651 –43.6 8.47 140 0.051 67.8 0.830 –24.8 600 0.545 –59.5 7.13 126 0.067 62.1 0.727 –31.9 800 0.439 –72.2 5.98 116 0.079 59.7 0.641 –36.7 1000 0.366 –83.3 5.10 108 0.088 58.7 0.581 –39.2 1200 0.308 –92.9 4.46 101 0.097 59.0 0.537 –41.3 1400 0.263 –102 3.92 95.3 0.105 59.7 0.505 –43.1 1600 0.228 –113 3.51 90.4 0.114 60.4 0.481 –44.8 1800 0.205 –120 3.19 86.0 0.123 61.1 0.461 –46.5 2000 0.175 –131 2.92 82.3 0.132 62.5 0.447 –47.8 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 Ω) Freq. S11 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 200 0.570 –52.3 10.3 143 0.030 66.1 0.811 –17.9 400 0.443 –89.8 7.23 120 0.046 56.8 0.665 –25.2 600 0.376 –115 5.37 107 0.056 56.7 0.586 –27.6 800 0.333 –134 4.20 97.7 0.064 58.4 0.534 –29.0 1000 0.317 –149 3.43 91.0 0.073 60.8 0.519 –30.6 1200 0.309 –161 2.93 85.0 0.082 63.8 0.505 –32.5 1400 0.305 –171 2.53 80.1 0.091 65.8 0.495 –34.8 1600 0.312 –180 2.25 76.1 0.101 68.1 0.487 –37.6 1800 0.309 175 2.03 72.0 0.112 69.9 0.481 –40.3 2000 0.320 166 1.84 68.6 0.123 71.4 0.476 –43.1 8 S21 S12 S22 Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.