IXYS IXTT110N10P

Advance Technical Information
IXTQ 110N10P
IXTT 110N10P
PolarHTTM
Power MOSFET
VDSS
ID25
RDS(on)
= 100
= 110
= 15
V
A
Ω
mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
100
100
V
V
±20
V
110
75
250
A
A
A
60
A
ID25
ID(RMS)
IDM
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
TO-3P (IXTQ)
G
D
TO-268 (IXTT)
TJ ≤ 150°C, RG = 4 Ω
PD
G
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-268
(TO-3P)
480
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
°C
1.13/10 Nm/lb.in.
5.5
5.0
g
g
(TAB)
S
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
Features
z
z
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
z
VDSS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 150°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
z
V
5.0
V
±100
nA
25
250
µA
µA
15
mΩ
z
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99132(05/04)
IXTQ 110N10P
IXTT 110N10P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
40
S
3550
pF
1370
pF
440
pF
21
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
25
ns
td(off)
RG = 4 Ω (External)
65
ns
25
ns
110
nC
25
nC
62
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31 K/W
(TO-3P)
0.21
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
110
A
ISM
Repetitive
250
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 50 V
QRM
TO-3P (IXTQ) Outline
130
ns
2.0
µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,306,728 B1 6,534,343
6,259,123 B1 6,404,065 B1 6,583,505
6,683,344
6,710,405B2
IXTQ 110N10P
IXTT 110N10P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
220
110
VGS = 10V
9V
100
180
80
160
70
140
I D - Amperes
I D - Amperes
90
VGS = 10V
200
8V
60
50
40
7V
9V
120
8V
100
80
7V
60
30
20
40
6V
10
0
0
0.2
0.4
0.6
0.8
1
1.2
6V
20
5V
0
1.4
1.6
1.8
0
2
1
2
3
Fig. 3. Output Characteristics
@ 150ºC
6
7
8
9
10
2.4
VGS = 10V
9V
100
VGS = 10V
2.2
R D S ( o n ) - Normalized
90
80
I D - Amperes
5
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
110
8V
70
60
7V
50
40
30
6V
20
2
1.8
I D = 110A
1.6
1.4
I D = 55A
1.2
1
0.8
5V
10
0.6
0
0
0.5
1
1.5
2
2.5
V D S - Volts
3
3.5
-50
4
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
80
3
2.8
70
2.6
TJ = 175ºC
2.4
2.2
2
1.8
VGS = 10V
1.6
1.4
VGS = 15V
1.2
TJ = 25ºC
1
External Lead Current Limit
60
I D - Amperes
R D S ( o n ) - Normalized
4
V D S - Volts
V D S - Volts
50
40
30
20
10
0.8
0
0.6
0
25
50
75
100 125 150 175 200 225 250
I D - Amperes
© 2004 IXYS All rights reserved
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTQ 110N10P
IXTT 110N10P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
70
250
225
TJ = -40ºC
60
150ºC
50
25ºC
175
g f s - Siemens
I D - Amperes
200
150
125
100
75
TJ = -40ºC
40
25ºC
150ºC
30
20
50
10
25
0
0
4
5
6
7
8
9
10
11
0
50
100
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
250
300
100
120
Fig. 10. Gate Charge
10
350
VDS = 50V
9
300
I D = 55A
8
250
I G = 10mA
7
VG S - Volts
I S - Amperes
150
I D - Amperes
200
150
6
5
4
3
100
TJ = 150ºC
2
50
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
1.2
1.4
V S D - Volts
1.6
1.8
2
0
20
40
60
80
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
TC = 25ºC
R DS(on) Limit
C iss
I D - Amperes
Capacitance - picoFarads
TJ = 175ºC
1000
C oss
25µs
100µs
100
1ms
10ms
C rss
DC
f = 1MHz
100
10
0
5
10
15
20
25
30
35
40
1
V DS - Volts
10
100
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,306,728 B1 6,534,343
6,259,123 B1 6,404,065 B1 6,583,505
6,683,344
6,710,405B2
IXTQ 110N10P
IXTT 110N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
0.1
1
10
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
100
1000