IXYS IXSP10N60B2D1

High Speed IGBT
with Diode
IXSA 10N60B2D1
IXSP 10N60B2D1
Short Circuit SOA Capability
VCES = 600 V
= 20 A
I C25
V CE(sat) = 2.5 V
Preliminary Data Sheet
D1
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
TC = 25°C
20
A
IC110
TC = 110°C
10
A
11
A
30
A
ICM = 20
@ 0.8 VCES
A
10
µs
100
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
250
°C
IF(110)
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 82Ω
Clamped inductive load, VGE = 20 V
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 150 Ω, non repetitive
PC
TC = 25°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body
t = 10s
Md
Mounting torque
(TO-220)
Weight
Symbol
1.3/10 Nm/lb. in
2
Test Conditions
= 750 µA, VCE = VGE
VGE(th)
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ± 20 V
VCE(sat)
IC
= 10A, VGE = 15 V
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
4.0
7.0
V
75
200
µA
µA
± 100
nA
2.5
V
TO-263 (IXSA)
G
E
C (TAB)
TO-220AB (IXSP)
C (TAB)
G C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
DS99193A(10/04)
© 2004 IXYS All rights reserved
IXSA 10N60B2D1
IXSP 10N60B2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
gfs
IC = 10A; VCE = 10 V, Note 1
2.0
Cies
3.6
S
400
pF
Coes
VCE = 25 V, VGE = 0 V
50
pF
Cres
f = 1 MHz
11
pF
17
nC
6
nC
7.5
nC
30
ns
30
ns
180
ns
Qg
Qge
IC = 10A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°°C
IC = 10A, VGE = 15 V
VCE = 0.8 VCES, RG = 30 Ω
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
165
430
td(on)
tri
Inductive load, TJ = 125°°C
Eon
td(off)
tfi
Eoff
IC = 10 A, VGE = 15 V
VCE = 0.8 VCES, RG = 30 Ω
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
RthCS
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
µJ
ns
30
ns
0.32
mJ
260
ns
270
ns
790
µJ
Millimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 (IXSA) Outline
1.25 K/W
TO-220
0.25
Reverse Diode (FRED)
Symbol
Dim.
ns
750
30
RthJC
TO-220 AB (IXSP) Outline
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Test Conditions
VF
IF = 10A, VGE = 0 V
TJ =150°C
IRM
trr
IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
TJ = 100°C
TJ = 100°C
1.66
2.66
1.5
90
V
V
A
ns
25
ns
2.5 K/W
RthJC
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
IXSA 10N60B2D1
IXSP 10N60B2D1
Fig. 1. Output Characte ristics
@ 25 ºC
Fig. 2. Extended Output Characte ristics
@ 25 ºC
35
20
VGE = 17V
18
VGE = 17V
15V
30
16
I C - Amperes
I C - Amperes
15V
25
14
13V
12
10
8
11V
6
20
13V
15
10
11V
4
5
9V
2
0
9V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
V C E - Volts
Fig. 3. Output Characteristics
@ 125 ºC
3
4
5
6
V C E - Volts
7
8
9
10
2.2
VGE = 17V
18
VGE = 15V
2.0
VC E (sat)- Normalized
15V
16
I C - Amperes
2
Fig. 4. Dependence of V CE(sat) on
Tem perature
20
14
13V
12
10
8
11V
6
4
I C = 20A
1.8
1.6
1.4
1.2
I C = 10A
1.0
9V
I C = 5A
0.8
2
7V
0.6
0
0.5
1
1.5
2
2.5
3
V CE - Volts
3.5
4
4.5
-50
5
-25
0
25
50
75
100
125
150
13
14
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
18
7
TJ = 25ºC
16
6
14
I C = 20A
5
I C - Amperes
VC E - Volts
1
10A
5A
4
3
12
10
8
TJ = 125ºC
6
25ºC
4
2
-40ºC
2
0
1
10
11
12
13
14
15
V G E - Volts
16
17
18
19
6
7
8
9
10
11
V G E - Volts
12
IXSA 10N60B2D1
IXSP 10N60B2D1
Fig. 8. Dependence of Turn-off
Fig. 7. Trans conductance
4.5
2.4
4
2.2
I C = 20A
2
E o f f - milliJoules
3.5
g f s - Siemens
Ene rgy Loss on RG
3
TJ = -40ºC
2.5
25ºC
2
125ºC
1.5
1.8
1.6
TJ = 125ºC
1.4
VGE = 15V
1.2
VCE = 480V
0.8
1
0.6
0.5
I C = 5A
0.4
0
0.2
0
2
4
6
8
10
12
14
16
18
0
20
50
100 150 200 250 300 350 400 450 500
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
2.0
TJ = 125ºC
R G = 30Ω
1.6
VGE = 15V
1.4
VCE = 480V
1.2
E o f f - milliJoules
E o f f - MilliJoules
Fig. 10. De pende nce of Turn-off
Ene rgy Loss on Tem pe rature
Energy Los s on IC
1.8
1.0
0.8
0.6
TJ = 25ºC
1.8
R G = 30Ω
1.6
VGE = 15V
1.4
VCE = 480V
1.0
0.6
0.2
0.2
0.0
0.0
8
10
12
14
I C - Amperes
16
18
I C = 10A
0.8
0.4
6
I C = 5A
25
20
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-off
Fig. 12. Depe ndence of Turn-off
Sw itching Tim e on RG
700
I C = 20A
1.2
0.4
4
Sw itching Tim e on IC
340
650
td(off)
600
tfi - - - - - -
320
550
TJ = 125ºC
500
VGE = 15V
450
VCE = 480V
I C = 5A
400
I C = 10A
350
I C = 20A
300
250
200
I C = 5A
150
Switching Time - nanoseconds
Switching Time - nanoseconds
I C = 10A
1
td(off)
300
tfi - - - - - -
280
TJ = 125ºC
260
R G = 30Ω
240
VGE = 15V
220
VCE = 480V
200
180
TJ = 25ºC
160
140
120
0
50
100 150 200 250 300 350 400 450 500 550
R G - Ohms
4
6
8
10
12
14
I C - Amperes
16
18
20
IXSA 10N60B2D1
IXSP 10N60B2D1
Fig. 13. Depe nde nce of Turn-off
Sw itching Tim e on Tem pe rature
Fig. 14. Gate Charge
16
320
td(off)
300
tfi - - - - - -
280
R G = 30Ω
260
VGE = 15V
240
VCE = 480V
I C = 20A
I C = 10A
12
220
200
I C = 5A
180
I G = 10mA
10
8
6
20A
4
I C = 10A
160
VCE = 300V
14
5A
VG E - Volts
Switching Time - nanoseconds
340
2
140
120
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105 115 125
0
2
4
6
8
10
12
14
16
18
Q G - nanoCoulombs
Fig. 16. Reve rs e-Bias Safe
Operating Are a
Fig. 15. Capacitance
1000
22
18
C ies
16
I C - Amperes
Capacitance - p F
20
100
C oes
10
14
12
10
8
6
C res
4
f = 1 MHz
2
TJ = 125ºC
R G = 82Ω
dV/dT < 10V/ns
0
1
0
5
10
15
20
25
V C E - Volts
30
35
100 150
40
200 250 300
350 400 450 500
550 600
V C E - Volts
Fig. 17. Maxim um Trans ient The rm al Res istance
1.4
R ( t h ) J C - ( ºC / W )
1.2
1
0.8
0.6
0.4
0.2
0
0.1
1
10
Pulse Width - milliseconds
100
1000
IXSA 10N60B2D1
IXSP 10N60B2D1
30
250
A
nC
25
15
IF = 5 A
150
TVJ = 100°C
IF = 10 A
8
IRM
Qr
20
IF = 5 A
A
VR = 300 V
200
TVJ = 150°C
IF
10
TVJ = 100°C
IF = 20 A
6
IF = 10 A
IF = 20 A
100
4
50
2
TVJ = 100°C
10
5
0
TVJ = 25°C
0
1
2
3
0
100
V
VF
Fig. 18. Forward current IF versus VF
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
2.0
ns
400
600 A/µs
800 1000
-diF/dt
0.3
TVJ = 100°C
V
µs
IF = 10 A
VFR
40
IF = 5 A
80
tfr
0.2
IF = 10 A
1.0
IF = 20 A
IRM
60
20
tfr
VFR
0.5
Qr
0.0
200
Fig. 20. Peak reverse current IRM
versus -diF/dt
VR = 300 V
trr
Kf
0
60
TVJ = 100°C
100
1.5
0
A/µs 1000
-diF/dt
VR = 300 V
0
40
0.1
40
80
120 C 160
0
200
400
600
TVJ
800 1000
A/µs
0
0
200
400
-diF/dt
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt
0.0
600 A/µs
800 1000
diF/dt
Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
10
K/W
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
0.1
0.01
0.001
0.00001
DSEP 8-06B
0.0001
0.001
0.01
0.1
s
t
1
Fig. 24. Transient thermal resistance junction-to-case
NOTE: Fig. 19 to Fig. 23 shows typical values
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,306,728 B1 6,534,343
6,259,123 B1 6,404,065 B1 6,583,505
6,683,344
6,710,405B2