High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 20 A IC110 TC = 110°C 10 A 11 A 30 A ICM = 20 @ 0.8 VCES A 10 µs 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 250 °C IF(110) ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive PC TC = 25°C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body t = 10s Md Mounting torque (TO-220) Weight Symbol 1.3/10 Nm/lb. in 2 Test Conditions = 750 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 10A, VGE = 15 V g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 V 75 200 µA µA ± 100 nA 2.5 V TO-263 (IXSA) G E C (TAB) TO-220AB (IXSP) C (TAB) G C E G = Gate E = Emitter C = Collector TAB = Collector Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast fall time for switching speeds up to 20 kHz Applications • AC motor speed control • Uninterruptible power supplies (UPS) • Welding Advantages • High power density DS99193A(10/04) © 2004 IXYS All rights reserved IXSA 10N60B2D1 IXSP 10N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 10A; VCE = 10 V, Note 1 2.0 Cies 3.6 S 400 pF Coes VCE = 25 V, VGE = 0 V 50 pF Cres f = 1 MHz 11 pF 17 nC 6 nC 7.5 nC 30 ns 30 ns 180 ns Qg Qge IC = 10A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff Inductive load, TJ = 25°°C IC = 10A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Ω Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 165 430 td(on) tri Inductive load, TJ = 125°°C Eon td(off) tfi Eoff IC = 10 A, VGE = 15 V VCE = 0.8 VCES, RG = 30 Ω Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthCS A B C D E F G H J K M N Q R µJ ns 30 ns 0.32 mJ 260 ns 270 ns 790 µJ Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 (IXSA) Outline 1.25 K/W TO-220 0.25 Reverse Diode (FRED) Symbol Dim. ns 750 30 RthJC TO-220 AB (IXSP) Outline K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions VF IF = 10A, VGE = 0 V TJ =150°C IRM trr IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 100°C TJ = 100°C 1.66 2.66 1.5 90 V V A ns 25 ns 2.5 K/W RthJC Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXSA 10N60B2D1 IXSP 10N60B2D1 Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Extended Output Characte ristics @ 25 ºC 35 20 VGE = 17V 18 VGE = 17V 15V 30 16 I C - Amperes I C - Amperes 15V 25 14 13V 12 10 8 11V 6 20 13V 15 10 11V 4 5 9V 2 0 9V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 V C E - Volts Fig. 3. Output Characteristics @ 125 ºC 3 4 5 6 V C E - Volts 7 8 9 10 2.2 VGE = 17V 18 VGE = 15V 2.0 VC E (sat)- Normalized 15V 16 I C - Amperes 2 Fig. 4. Dependence of V CE(sat) on Tem perature 20 14 13V 12 10 8 11V 6 4 I C = 20A 1.8 1.6 1.4 1.2 I C = 10A 1.0 9V I C = 5A 0.8 2 7V 0.6 0 0.5 1 1.5 2 2.5 3 V CE - Volts 3.5 4 4.5 -50 5 -25 0 25 50 75 100 125 150 13 14 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 18 7 TJ = 25ºC 16 6 14 I C = 20A 5 I C - Amperes VC E - Volts 1 10A 5A 4 3 12 10 8 TJ = 125ºC 6 25ºC 4 2 -40ºC 2 0 1 10 11 12 13 14 15 V G E - Volts 16 17 18 19 6 7 8 9 10 11 V G E - Volts 12 IXSA 10N60B2D1 IXSP 10N60B2D1 Fig. 8. Dependence of Turn-off Fig. 7. Trans conductance 4.5 2.4 4 2.2 I C = 20A 2 E o f f - milliJoules 3.5 g f s - Siemens Ene rgy Loss on RG 3 TJ = -40ºC 2.5 25ºC 2 125ºC 1.5 1.8 1.6 TJ = 125ºC 1.4 VGE = 15V 1.2 VCE = 480V 0.8 1 0.6 0.5 I C = 5A 0.4 0 0.2 0 2 4 6 8 10 12 14 16 18 0 20 50 100 150 200 250 300 350 400 450 500 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off 2.0 TJ = 125ºC R G = 30Ω 1.6 VGE = 15V 1.4 VCE = 480V 1.2 E o f f - milliJoules E o f f - MilliJoules Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature Energy Los s on IC 1.8 1.0 0.8 0.6 TJ = 25ºC 1.8 R G = 30Ω 1.6 VGE = 15V 1.4 VCE = 480V 1.0 0.6 0.2 0.2 0.0 0.0 8 10 12 14 I C - Amperes 16 18 I C = 10A 0.8 0.4 6 I C = 5A 25 20 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Fig. 12. Depe ndence of Turn-off Sw itching Tim e on RG 700 I C = 20A 1.2 0.4 4 Sw itching Tim e on IC 340 650 td(off) 600 tfi - - - - - - 320 550 TJ = 125ºC 500 VGE = 15V 450 VCE = 480V I C = 5A 400 I C = 10A 350 I C = 20A 300 250 200 I C = 5A 150 Switching Time - nanoseconds Switching Time - nanoseconds I C = 10A 1 td(off) 300 tfi - - - - - - 280 TJ = 125ºC 260 R G = 30Ω 240 VGE = 15V 220 VCE = 480V 200 180 TJ = 25ºC 160 140 120 0 50 100 150 200 250 300 350 400 450 500 550 R G - Ohms 4 6 8 10 12 14 I C - Amperes 16 18 20 IXSA 10N60B2D1 IXSP 10N60B2D1 Fig. 13. Depe nde nce of Turn-off Sw itching Tim e on Tem pe rature Fig. 14. Gate Charge 16 320 td(off) 300 tfi - - - - - - 280 R G = 30Ω 260 VGE = 15V 240 VCE = 480V I C = 20A I C = 10A 12 220 200 I C = 5A 180 I G = 10mA 10 8 6 20A 4 I C = 10A 160 VCE = 300V 14 5A VG E - Volts Switching Time - nanoseconds 340 2 140 120 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 2 4 6 8 10 12 14 16 18 Q G - nanoCoulombs Fig. 16. Reve rs e-Bias Safe Operating Are a Fig. 15. Capacitance 1000 22 18 C ies 16 I C - Amperes Capacitance - p F 20 100 C oes 10 14 12 10 8 6 C res 4 f = 1 MHz 2 TJ = 125ºC R G = 82Ω dV/dT < 10V/ns 0 1 0 5 10 15 20 25 V C E - Volts 30 35 100 150 40 200 250 300 350 400 450 500 550 600 V C E - Volts Fig. 17. Maxim um Trans ient The rm al Res istance 1.4 R ( t h ) J C - ( ºC / W ) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 1 10 Pulse Width - milliseconds 100 1000 IXSA 10N60B2D1 IXSP 10N60B2D1 30 250 A nC 25 15 IF = 5 A 150 TVJ = 100°C IF = 10 A 8 IRM Qr 20 IF = 5 A A VR = 300 V 200 TVJ = 150°C IF 10 TVJ = 100°C IF = 20 A 6 IF = 10 A IF = 20 A 100 4 50 2 TVJ = 100°C 10 5 0 TVJ = 25°C 0 1 2 3 0 100 V VF Fig. 18. Forward current IF versus VF Fig. 19. Reverse recovery charge Qr versus -diF/dt 2.0 ns 400 600 A/µs 800 1000 -diF/dt 0.3 TVJ = 100°C V µs IF = 10 A VFR 40 IF = 5 A 80 tfr 0.2 IF = 10 A 1.0 IF = 20 A IRM 60 20 tfr VFR 0.5 Qr 0.0 200 Fig. 20. Peak reverse current IRM versus -diF/dt VR = 300 V trr Kf 0 60 TVJ = 100°C 100 1.5 0 A/µs 1000 -diF/dt VR = 300 V 0 40 0.1 40 80 120 C 160 0 200 400 600 TVJ 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 0.0 600 A/µs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: 10 K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06B 0.0001 0.001 0.01 0.1 s t 1 Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig. 19 to Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2