KTX512T SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA DC/DC CONVERTER APPLICATIONS. FEATURES E K ᴌComposite type with a PNP transistor and a Schottky barrier diode 1 6 G 2 5 G contained in one package facilitating high-density mounting. K B 3 4 DIM A B C D E A the KTA1535T and the other the KDR411S, encapsulated in one packages. F ᴌThe KTX512T is formed with two chips, one being equivalent to ᴌUltrasmall package facilitates miniaturization in end products D (mounting height 0.7Ὂ). 6 5 4 Marking 6 D1 Q1 1 2 Type Name 3 L J 5 4 Lot No. DB 1 2 I C EQUIVALENT CIRCUIT (TOP VIEW) J F G MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15 K L 0.60 0.55 H 1. Q 1 EMITTER 2. Q 1 BASE 3. D 1 ANODE 4. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 5. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 6. Q 1, D 1 COMMON (COLLECTOR, CATHODE) 3 TS6 MAXIMUM RATING (Ta=25ᴱ) Transistor Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V DC IC -3 A Pulse ICP -5 A IB 600 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ SYMBOL RATING UNIT Peak Reverse Voltage VRRM 40 V DC Reverse Voltage VR 20 V Average Output Current ID 0.5 A IFSM 3 A Tj 125 ᴱ Tstg -40ᴕ125 ᴱ Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) Diode (SBD) D1 CHARACTERISTIC Peak Forward Surge Current Junction Temperature Storage Temperature Range 2002. 1. 24 Revision No : 1 1/5 KTX512T ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Transistor Q1 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=-10Ọ A, IE=0 -20 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10Ọ A, IC=0 -5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-30mA - -130 -165 mV Base-Emitter Saturation Voltage VBE(sat) IC=-1.5A, IB=-30mA - -0.85 -1.2 V DC Current Gain hFE VCE=-2V, IC=-500mA 200 - 560 Transition Frequency fT VCE=-2V, IC=-500mA - 160 - MHz VCB=-10V, f=1MHz - 45 - pF - 30 - - 90 - - 10 - MIN. TYP. MAX. UNIT Cob Collector Output Capacitance Turn-On Time ton PW=20µs DC <= 1% INPUT Swiitching Time Storage Time tstg IB1 I B2 1ΚΩ 50Ω RL VR 220µF Fall Time OUTPUT 470µF V BE =5V tf nS VCC =-5V -20IB1=20IB2=IC =-1.5A Diode (SBD) D1 CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION VF (1) IF=10mA - - 0.3 V VF (2) IF=500mA - - 0.5 V Reverse Current IR VR=10V - - 30 ҏ A Total Capacitance CT VR=10V, f=1MHz - 20 - pF 2002. 1. 24 Revision No : 1 2/5 KTX512T Q 1 (TRANSISTOR) I C - V CE -14mA -10mA -8mA -1.4 -1.2 -6mA -1.0 -4mA -0.8 -0.6 -2mA -0.4 -0.2 0 COLLECTOR CURRENT I C (mA) -1.6 -200 -12mA mA -1.8 -1 6 COLLECTOR CURRENT I C (A) -2.0 I C - V CE IB=0mA 0 -0.2 -0.4 -0.6 -0.8 -0.6mA -140 -0.5mA -120 -0.4mA -100 -80 -0.3mA -60 -0.2mA -40 -0.1mA -20 IB=0mA 0 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 500 300 100 50 -0.3 -1 -3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE VCE =-2V -0.1 -0.1 -0.05 -0.03 -0.01 -0.005 -0.01 -0.03 -0.3 -0.1 -0.05 -0.03 Revision No : 1 -1 -1 -3 -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -0.5 COLLECTOR CURRENT I C (A) 2002. 1. 24 -0.3 -3 COLLECTOR CURRENT I C (A) I C /I B =50 -0.3 -0.1 VBE(sat) - I C -1 -0.1 -5 I C /I B =20 -0.3 VCE(sat) - I C -0.03 -4 -0.5 COLLECTOR CURRENT I C (A) -0.01 -0.01 -3 VCE(sat) - I C 1K -0.03 -2 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 30 -0.01 -0.7mA -160 0 -1.0 -0.8mA -180 I C /I B =50 -5 -3 -1 -0.5 -0.3 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 3/5 KTX512T I C - V BE COLLECTOR CURRENT I C (A) -3.5 VCE =-2V -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 TRANSITION FREQUENCY fT (MHz) fT - I C 1K VCE =-2V 500 300 100 50 30 -0.01 -0.3 -0.1 -3 -1 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) SAFE OPERATING AREA C ob - V CB -10 1K f=1MHz COLLECTOR CURRENT I C (A) 500 300 100 50 30 10 -3 -1 -5 I C MAX.(PULSED) -5 -3 I C MAX (CONTINUOUS) -1 10 mS 0m S * * ER AT IO N -0.3 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.1 -0.05 -0.02 -0.2 COLLECTOR-BASE VOLTAGE VCB (V) OP -0.5 -30 -10 DC 10 S* 0µ 50 S* 1m COLLECTOR OUTPUT CAPACITANCE C ob (pF) -0.03 -1 -3 -10 -20 COLLECTOR-EMITTER VOLTAGE V CE (V) D 1 (SBD) 1.2 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta ( C) 2002. 1. 24 Revision No : 1 160 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C 1.0 0 IF - V F 1 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) FORWARD CURRENT I F (A) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 10m 1m 100µ 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE V F (V) 4/5 I R - VR REVERSE CURRENT I R (A) 10m Ta=125 C 1m Ta=75 C 100µ Ta=25 C 10µ 1µ 0 5 10 15 20 25 REVERSE VOLTAGE V R (V) 2002. 1. 24 Revision No : 1 30 35 CAPACITANCE BETWEEN TERMINALS C T (pF) KTX512T C T - VR 1K 100 10 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 5/5