DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2790GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 5 FEATURES P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 • Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) • Low input capacitance N-channel Ciss = 500 pF TYP. P-channel 4.0 Ciss = 460 pF TYP. 1.0 +0.05 –0.10 5.37 Max. 0.10 Min. RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 4 0.20 P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A) 6.0 ±0.3 1 1.8 Max. RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) 0.6 1.27 0.12 M 0.40 +0.11 –0.05 0.5 ±0.2 0.10 EQUIVALENT CIRCUITS • Built-in gate protection diode • Small and surface mount package (Power SOP8) N-channel P-channel Drain ORDERING INFORMATION PART NUMBER PACKAGE µ PA2790GR Power SOP8 Body Diode Gate Gate Protection Diode Drain Source Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16954EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2004 µ PA2790GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain to Source Voltage (VGS = 0 V) VDSS 30 −30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 m20 V Drain Current (DC) ID(DC) ±6 m6 A ID(pulse) ±24 m24 A Drain Current (pulse) Note1 Total Power Dissipation (1 unit) Note2 Total Power Dissipation (2 units) Note2 Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 PT 1.7 W PT 2.0 W Tch 150 °C Tstg −55 to +150 °C IAS 6 −6 A EAS 3.6 3.6 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Starting Tch = 25°C, VDD = 1 2 2 x VDSS, RG = 25 Ω, L = 100 µH, VGS = VGSS → 0 V Data Sheet G16954EJ2V0DS µ PA2790GR ELECTRICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.) N-channel CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance Note Drain to Source On-state Resistance Note MIN. VDS = 10 V, ID = 1 mA TYP. MAX. UNIT 10 µA ±10 µA 2.5 V 1.5 | yfs | VDS = 10 V, ID = 3 A RDS(on)1 VGS = 10 V, ID = 3 A 21 28 mΩ RDS(on)2 VGS = 4.5 V, ID = 3 A 28 40 mΩ RDS(on)3 VGS = 4.0 V, ID = 3 A 34 53 mΩ 2 S Input Capacitance Ciss VDS = 10 V 500 pF Output Capacitance Coss VGS = 0 V 135 pF Reverse Transfer Capacitance Crss f = 1 MHz 77 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 3 A 9.2 ns tr VGS = 10 V 8.8 ns td(off) RG = 10 Ω 28 ns 7.4 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG ID = 6 A 12.6 nC Gate to Source Charge QGS VDD = 24 V 1.7 nC QGD VGS = 10 V 3.8 nC VF(S-D) IF = 6 A, VGS = 0 V 0.85 V Reverse Recovery Time trr IF = 6 A, VGS = 0 V 18 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 11 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 µs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet G16954EJ2V0DS 3 µ PA2790GR P-channel CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 µA VGS(off) VDS = −10 V, ID = −1 mA −2.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note −1.0 | yfs | VDS = −10 V, ID = −3 A RDS(on)1 VGS = −10 V, ID = −3 A 43 60 mΩ RDS(on)2 VGS = −4.5 V, ID = −3 A 58 80 mΩ RDS(on)3 VGS = −4.0 V, ID = −3 A 65 110 mΩ 2 S Input Capacitance Ciss VDS = −10 V 460 pF Output Capacitance Coss VGS = 0 V 130 pF Reverse Transfer Capacitance Crss f = 1 MHz 77 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −3 A 8.5 ns VGS = −10 V 4.8 ns RG = 10 Ω 42 ns 19 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = −6 A 11 nC Gate to Source Charge QGS VDD = −24 V 1.7 nC QGD VGS = −10 V 3.3 nC VF(S-D) IF = 6 A, VGS = 0 V 0.92 V Reverse Recovery Time trr IF = 6 A, VGS = 0 V 21 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 12 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 4 IG = −2 mA RL 50 Ω VDD Data Sheet G16954EJ2V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff µ PA2790GR TYPICAL CHARACTERISTICS (TA = 25°C) (1) N-channel TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 2.4 2 units 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 20 TA - Ambient Temperature - ˚C 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 10 PW = 100 µs ID(DC) DC 1 10 ms 100 ms 1 ms Power Dissipation Limited 0.1 TA = 25°C Single pulse Mounted on ceramic substrate of 2 0.01 0.01 2000 mm x 1.6 mm 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) RDS(on) Limited (at VGS = 10 V) Rth(ch-A) = 73.5°C/W 100 10 1 0.1 100 µ TA = 25°C, Single pulse, 1 unit Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet G16954EJ2V0DS 10 100 1000 5 µ PA2790GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 25 4.5 V ID - Drain Current - A ID - Drain Current - A 10 V 20 VGS = 4.0 V 15 10 10 TA = −55°C 25°C 75°C 150°C 1 0.1 5 VDS = 10 V Pulsed Pulsed 0 0.01 0 0.5 1 1.5 2 0 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 1 VDS = 10 V ID = 1 mA 0 RDS(on) - Drain to Source On-state Resistance - mΩ 100 5 TA = −55°C 25°C 75°C 150°C 10 1 VDS = 10 V Pulsed 0.1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 Pulsed 125 100 75 VGS = 4.0 V 4.5 V 10 V 50 25 0 0.1 1 10 100 150 ID = 3 A Pulsed 125 100 75 50 25 0 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A 6 4 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 2 50 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 0 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 1 Data Sheet G16954EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 50 VGS = 4.0 V 4.5 V 10 V 40 Ciss, Coss, Crss - Capacitance - pF 30 20 10 ID = 3 A Pulsed VGS = 0 V f = 1 MHz 1000 Ciss 100 Coss Crss 0 10 -50 0 50 100 150 0.1 Tch - Channel Temperature - °C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 td(off) tf td(on) 10 tr VDS = 15 V VGS = 10 V RG = 10 Ω VDS - Drain to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 15 VDD = 24 V 15 V 6V 20 10 10 5 VGS VDS ID = 6 A 0 1 0.1 1 10 0 0 100 5 10 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 15 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2790GR 10 VGS = 10 V 1 0V 0.1 10 di/dt = 100 A/µs VGS = 0 V Pulsed 0.01 1 0 0.5 1 0.1 VF(S-D) - Source to Drain Voltage - V 1 10 100 IF - Diode Forward Current - A Data Sheet G16954EJ2V0DS 7 µ PA2790GR (2) P-channel TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 2.4 2 units 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 20 TA - Ambient Temperature - ˚C 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) ID - Drain Current - A ID(DC) -10 PW = 100 µs RDS(on) Limited (at VGS = −10 V) DC 1 ms -1 10 ms 100 ms Power Dissipation Limited -0.1 TA = 25°C Single pulse Mounted on ceramic substrate of 2000 mm2 x 1.6 mm -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 10 1 TA = 25°C, Single pulse, 1 unit Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 0.1 100 µ 8 Rth(ch-A) = 73.5°C/W 100 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet G16954EJ2V0DS 10 100 1000 µ PA2790GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 -25 −4.5 V ID - Drain Current - A ID - Drain Current - A VGS = −10 V -20 -15 −4.0 V -10 -5 -10 -1 TA = −55°C 25°C 75°C 150°C -0.1 VDS = −10 V Pulsed Pulsed 0 -0.01 0 -0.5 -1 -1.5 -2 -2 -3 -4 -5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S -2 -1 VDS = −10 V ID = 1 mA 0 -50 0 50 100 150 100 TA = −55°C 25°C 75°C 150°C 10 1 VDS = −10 V Pulsed 0.1 -0.1 -1 -10 -100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 Pulsed 250 200 150 100 VGS = −4.0 V −4.5 V −10 V 50 0 -0.1 -1 -10 -100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V -1 VDS - Drain to Source Voltage - V -3 RDS(on) - Drain to Source On-state Resistance - mΩ 0 300 ID = −3 A Pulsed 250 200 150 100 50 ID - Drain Current - A 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V Data Sheet G16954EJ2V0DS 9 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 100 VGS = −4.0 V −4.5 V −10 V 60 40 20 ID = 3 A Pulsed VGS = 0 V f = 1 MHz 1000 Ciss 100 Crss 0 -50 0 50 100 10 -0.1 150 Tch - Channel Temperature - °C -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(off) tf 10 td(on ) tr 1 -0.1 -1 VDS = −15 V VGS = −10 V RG = 10 Ω -10 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -10 -30 100 -15 VDD = −24 V −15 V −6 V -20 -10 -10 -5 VGS VDS ID = −6 A 0 0 0 -100 5 10 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 15 100 trr - Reverse Recovery Time - ns 100 IF - Diode Forward Current - A -1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS VGS = −10 V 10 1 0V 0.1 10 di/dt = 100 A/µs VGS = 0 V Pulsed 0.01 1 0 0.5 1 0.1 VF(S-D) - Source to Drain Voltage - V 10 Coss 1 10 IF - Diode Forward Current - A Data Sheet G16954EJ2V0DS 100 VGS - Gate to Source Voltage - V 80 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2790GR µ PA2790GR • The information in this document is current as of August, 2004. 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