NEC UPA1792

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1792
SWITCHING
N- AND P-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
The µPA1792 is N- and P-Channel MOS Field Effect Transistors
designed for Motor Drive application of HDD and so on.
8
5
FEATURES
• Low on-resistance
N-Channel
1 ; Source 1
2 ; Gate 1
7,8 ; Drain 1
P-Channel
3 ; Source 2
4 ; Gate 2
5,6 ; Drain 2
N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)
0.05 MIN.
RDS(on)2 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.9 A)
4.4
5.37 MAX.
0.8
+0.10
–0.05
RDS(on)1 = 36 mΩ MAX. (VGS = –10 V, ID = –2.9 A)
6.0 ±0.3
4
0.15
P-Channel
1.8 MAX.
RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A)
1.44
1
RDS(on)3 = 65 mΩ MAX. (VGS = –4.0 V, ID = –2.9 A)
• Low input capacitance
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
N-Channel Ciss = 760 pF TYP.
P-Channel Ciss = 900 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Drain
PART NUMBER
PACKAGE
µPA1792G
Power SOP8
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Gate
Protection
Diode
N-Channel
Remark
Body
Diode
Gate
Source
P-Channel
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G14557EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
1999, 2000
µPA1792
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain to Source Voltage (VGS = 0 V)
VDSS
30
–30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
± 20
# 20
V
Drain Current (DC)
ID(DC)
± 6.8
# 5.8
A
ID(pulse)
± 27.2
# 23.2
A
Drain Current (pulse)
Note1
Total Power Dissipation (1 unit)
Note2
PT
1.7
W
Total Power Dissipation (2 unit)
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 2000 mm × 1.6 mm, TA = 25°C
2
Data Sheet G14557EJ1V0DS00
µPA1792
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
N-CHANNEL
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 3.4 A
20.5
26
mΩ
RDS(on)2
VGS = 4.5 V, ID = 3.4 A
27
36
mΩ
RDS(on)3
VGS = 4.0 V, ID = 3.4 A
31
42
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.1
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID =3.4 A
3.0
7.5
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 10 V
760
pF
Output Capacitance
Coss
VGS = 0 V
250
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
95
pF
Turn-on Delay Time
td(on)
ID = 3.4 A
20
ns
VGS(on) = 10 V
140
ns
td(off)
VDD = 15 V
50
ns
tf
RG = 10 Ω
30
ns
Total Gate Charge
QG
ID = 6.8 A
14
nC
Gate to Source Charge
QGS
VDD = 24 V
2
nC
Gate to Drain Charge
QGD
VGS = 10 V
5
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
S
10
µA
±10
µA
VF(S-D)
IF = 6.8 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
IF = 6.8 A, VGS = 0 V
30
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
20
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
VGS(on)
10 %
IG = 2 mA
RL
50 Ω
VDD
90 %
PG.
VDD
90 %
ID
90 %
ID
VGS
0
ID
10 %
0 10 %
Wave Form
τ
τ = 1 µs
Duty Cycle ≤ 1 %
tr td(off)
td(on)
ton
tf
toff
Data Sheet G14557EJ1V0DS00
3
µPA1792
P-CHANNEL
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = –10 V, ID = –2.9 A
30
36
mΩ
RDS(on)2
VGS = –4.5 V, ID = –2.9 A
43
54
mΩ
RDS(on)3
VGS = –4.0 V, ID = –2.9 A
49
65
mΩ
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –2.9 A
3.5
8.0
Drain Leakage Current
IDSS
VDS = –30 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS =
Input Capacitance
Ciss
VDS = –10 V
900
pF
Output Capacitance
Coss
VGS = 0 V
300
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
ID = –2.9 A
23
ns
VGS(on) = –10 V
220
ns
VDD = –15 V
90
ns
tf
RG = 10 Ω
70
ns
Total Gate Charge
QG
ID = –5.8 A
17
nC
Gate to Source Charge
QGS
VDD = –24 V
2.5
nC
Gate to Drain Charge
QGD
VGS = –10 V
4.0
nC
VF(S-D)
IF = 5.8 A, VGS = 0 V
0.85
V
Reverse Recovery Time
trr
IF = 5.8 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
30
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
Body Diode Forward Voltage
# 16 V, VDS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
VGS (−)
VGS
Wave Form
0
PG.
VDD
ID
90 %
90 %
10 %
0 10 %
Wave Form
τ = 1 µs
Duty Cycle ≤ 1 %
# 10
µA
tr td(off)
td(on)
ton
IG = −2 mA
RL
50 Ω
VDD
90 %
ID
τ
4
VGS(on)
10 %
ID (−)
VGS (−)
0
µA
D.U.T.
RL
PG.
–1
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
S
tf
toff
Data Sheet G14557EJ1V0DS00
µPA1792
TYPICAL CHARACTERISTICS (TA = 25°C)
A) N-Channel
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160
2.8
Mounted on ceramic
substrate 2of
2000 mm ×1.6 mm
2.4
2 unit
2.0
1 unit
1.6
1.2
0.8
0.4
0
0
TA - Ambient Temperature - ˚C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
) L 0V
on
S( = 1
RD GS
(V
10
ID(DC)
Po
we
r
10
m
s
Di
10
ss
0m
ipa
tio
1
n
s
Lim
ite
d
TA = 25 ˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
d
ite
im )
Mounted on ceramic
substrate of
2000 mm2×1.6 mm, 1 unit
PW
=
10
0
µs
1m
s
1000
100
Rth(ch-A) = 73.5˚C/W
10
1
0.1
0.01
100 µ
Mounted on ceramic
substrate of 2000 mm2 × 1.6 mm
Single Pulse, 1 unit, TA = 25˚C
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14557EJ1V0DS00
5
µPA1792
A) N-Channel
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
35
Pulsed
VGS = 10 V
Pulsed
ID - Drain Current - A
ID - Drain Current - A
30
10
TA =125˚C
75˚C
1
25˚C
−25˚C
4.5 V
25
4.0 V
20
15
10
5
VDS = 10 V
0.1
1
2
3
4
0
5
0
75˚C
125˚C
0.1
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID- Drain Current - A
6
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
VGS = 4.0 V
80
60
4.5 V
40
10 V
20
0
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
TA = −25˚C
25˚C
10
VGS(off) - Gate to Source Cut-off Voltage - V
|yfs| - Forward Transfer Admittance - S
VDS = 10 V
Pulsed
1
1.6
1.2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
0.8
0.4
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
90
ID = 4.0 A
80
6.8 A
70
60
50
40
30
20
10
0
5
0
15
10
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.0
1.0
ID - Drain Current - A
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
Data Sheet G14557EJ1V0DS00
µPA1792
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
Pulsed
VGS = 4.5 V
40
30
10 V
20
10
− 50
0
50
100
10
VGS = 10 V
VGS = 0 V
1
0.1
150
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Ciss
Coss
100
Crss
10
0.1
1
0.4
10
100
100
10
10
1.4
tr
100
tf
td(off)
td(on)
10
VDS = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/µs
VGS = 0 V
1
1.2
1.0
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
0.1
0.8
1000
VDS - Drain to Source Voltage - V
1000
0.6
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
0.2
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
14
35
30
25
12
VDD = 24 V
15 V
6V
VGS
10
20
8
15
6
10
4
5
0
0
2
VDS
5
VGS - Gate to Source Voltage - V
50
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
A) N-Channel
ID = 6.8 A
10
15
20
25
0
30
QG - Gate Charge - nC
ID - Drain Current - A
Data Sheet G14557EJ1V0DS00
7
µPA1792
B) P-Channel
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160
2.8
Mounted on ceramic
substrate 2of
2000 mm ×1.6 mm
2.4
2 unit
2.0
1 unit
1.6
1.2
0.8
0.4
0
0
TA - Ambient Temperature - ˚C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
−100
−10
ID(pulse)
d
ite
im V)
−10
)L
on
S( =
RD GS
(V
Mounted on ceramic
substrate of
2000 mm2 × 1.6 mm, 1 unit
PW
=
10
0
µs
1m
s
ID(DC)
Po
we
r
10
m
s
Di
10
ss
0m
ipa
tio
−1
n
s
Lim
ite
d
TA = 25 ˚C
Single Pulse
−0.1
−0.1
−1
−10
−100
VDS - Drain to Source Voltage - V
rth(t) - Transient Thermal Resistance - ˚C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 73.5˚C/W
10
1
0.1
0.01
100 µ
Mounted on ceramic
substrate of 2000 mm2 × 1.6 mm
Single Pulse, 1 unit, TA = 25˚C
1m
10 m
100 m
1
10
PW - Pulse Width - s
8
Data Sheet G14557EJ1V0DS00
100
1000
µPA1792
B) P-Channel
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
−100
−30
Pulsed
ID - Drain Current - A
TA =150˚C
75˚C
−1
−0.1
25˚C
−25˚C
−0.01
VDS = −10 V
−1
−2
−3
−4.0 V
−15
−10
0
−4
−0.4
0
−0.8
−1.2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
Pulsed
ID = −1.2 A
−5.8 A
50
100
VDS = −10V
Pulsed
TA = −25˚C
25˚C
10
75˚C
150˚C
1
0.1
−0.001
−0.01
−0.1
−10
−1
−100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
80
VGS = −4.0 V
60
−4.5 V
40
−10 V
20
0
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-state Resistance - mΩ
|yfs| - Forward Transfer Admittance - S
−0.001
0
RDS(on) - Drain to Source On-state Resistance - mΩ
−4.5 V
VGS = −10 V
−20
−5
VGS(off) - Gate to Source Cut-off Voltage - V
ID - Drain Current - A
Pulsed
−25
−10
40
30
20
10
0
−5
0
−15
−10
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−3.0
VDS = −10 V
ID = −1 mA
−2.0
−1.0
0
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet G14557EJ1V0DS00
9
µPA1792
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
VGS = −4.0 V
−4.5 V
−10 V
60
40
20
0
− 50
0
50
100
Pulsed
VGS = −4.5 V
10
VGS = 0 V
1
0.1
0.01
150
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
Coss
100
10
−0.1
Crss
−1
−10
−100
tf
td(off)
td(on)
100
10
1
−1
−10
10
−100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−12
−25
−20
−10
VDD = −24 V
−15 V
−6 V
−8
−6
−15
VGS
−10
−5
−4
−2
VDS
ID = −5.8 A
0
0
0
5
10
15
QG - Gate Charge - nC
ID - Drain Current - A
10
VDS = −15 V
VGS = −10 V
RG = 10 Ω
−100
−30
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
100
−10
1.4
ID - Drain Current - A
di/dt = 100 A/µs
VGS = 0 V
−1
1.2
1.0
tr
−0.1
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
−0.1
0.8
1000
VDS - Drain to Source Voltage - V
1000
0.6
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1 MHz
1000
0.4
10000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
0.2
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
Data Sheet G14557EJ1V0DS00
20
VGS - Gate to Source Voltage - V
80
100
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
B) P-Channel
µPA1792
[MEMO]
Data Sheet G14557EJ1V0DS00
11
µPA1792
• The information in this document is current as of July, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
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parties arising from the use of these circuits, software and information.
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M8E 00. 4