DATA SHEET MOS Integrated Circuit µPD16873/A/B/C MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER DESCRIPTION µPD16873/A/B/C is 3 aspect spindle motor driver that composed by CMOS control circuit and MOS bridge output. The consumption electric power can be substantially reduced to the screwdriver which used a conventional Bipolar transistor by the adoption of 3 aspect all-wave PWM methods and making an output paragraph MOSFET. FEATURES • Low On resistance. (The summation of the on resistance of the upper and lower MOSFET) RON = 0.6 Ω (TYP.) • Low consumption power for 3 aspects all-wave PWM drive method. • Index pulse (FG pulse) output function built in. • By the PWM-drive form and the IND pulse pattern, 4 kind, line-up PWM method Pattern of IND pulse (at 12 pole motor) µPD16873 normal 3 phase composition output (18 pulses/turn) µPD16873A normal 1 phase output (6 pulses/turn) µPD16873B synchronous 1 phase output (6 pulses/turn) µPD16873C synchronous 3 phase composition output (18 pulses/turn) • Built in STANDBY terminal and off the inner circuit at the time of the standby. • Built in START/STOP terminal. Operating short brake works, when ST/SP terminal is off state. • Supply voltage: 5 V drive • Low consumption current: IDD = 3 mA (MAX.) • Thermal shut down circuit (TSD) built in. • Over current protection circuit built in. (Setting by outside resistance) • Low voltage malfunction prevention circuit built in. • Reverse turn prevention circuit built in. • Hall bias switch built in. (synchronized STB signal.) • Loading into 30-pin plastic TSSOP (300 mil). ORDERING INFORMATION Part number Function µPD16873MC-6A4 normal-PWM/3 phase IND µPD16873AMC-6A4 normal-PWM/1 phase IND µPD16873BMC-6A4 synchronous-PWM/1 phase IND µPD16873CMC-6A4 synchronous-PWM/3 phase IND Package 30-pin plastic TSSOP (7.62 mm (300)) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13870EJ1V0DS00 (1st edition) Date Published February 2000 N CP(K) Printed in Japan © 2000 µPD16873/A/B/C ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil) Parameter Symbol Supply voltage Input voltage Output pin voltage Note 1 Condition Rating Unit VDD control block −0.5 to +5.7 V VM output block −0.5 to +5.7 V VIN −0.5 to VDD + 0.5 V VOUT −0.5 to +6.7 V ID(DC) DC ±0.5 A/phase ID(pulse) PW < 5 ms, Duty < 30 % ±1.3 A/phase IDR(pulse) PW < 5 ms, Duty < 30 % ±1.9 A/phase PT 1.0 W Peak junction temperature TCH(MAX) 150 °C Storage temperature range Tstg −55 to 150 °C Output current (DC) Note 2 Output current (pulse) Note 3 Output current (pulse, reverse brake) Power consumption Notes 1. DC 2. PW < 5 ms, Duty < 30 % (start-up, locking) 3. PW < 5 ms, Duty < 30 % (reverse brake) RECOMMENDED OPERATING CONDITIONS When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil) Parameter Symbol Supply voltage Input voltage Output current (DC) Condition Note 2 Output current (pulse) Note 3 Output current (pulse, reverse brake) MAX. Unit control block 4.5 5.0 5.5 V VM output block 4.5 5.0 5.5 V VDD V 0 ID(DC) DC 0.4 A/phase ID(pulse) PW < 5 ms, Duty < 30 % 1.0 A/phase IDR(pulse) PW < 5 ms, Duty < 30 % 1.5 A/phase Hall bias current IHB 10 20 mA IND terminal output current IFG ±2.5 ±5.0 mA Operating temperature TA 75 °C Notes 1. DC 2. PW < 5 ms, Duty < 30 % (start-up, locking) 3. PW < 5ms, Duty < 30 % (reverse brake) 2 TYP. VDD VIN Note 1 MIN. Data Sheet S13870EJ1V0DS00 −20 µPD16873/A/B/C CHARACTERISTICS (Unless otherwise specified, TA = 25°°C, VDD = VM = 5 V) Parameter Symbol Condition MIN. TYP. MAX Unit 1.5 3.0 mA 1.0 µA VDD V 0.8 V <all> VDD pin current (operating) IDD STB = VDD VDD pin current (standby) IDD(ST) STB = GND <ST/SP, STB pin> High level input voltage VIH Low level input voltage VIL Input pull-down resistance RIND 1.8 110 kΩ 75 kHz <Oscillation circuit part> Triangle wave oscillation frequency fPWM CT = 330pF <Hall amplifier part> Same aspect input range VHch Hysteresis VHhys Input bias voltage IHbias 1.5 VH = 2.5 V 15 4.0 V 50 mV 1.0 µA 0.5 V <Hall bias part> Hall bias voltage VHB IHB = 10 mA IND terminal high level votlage VFG_H IFG = −2.5 mA IND terminal low level voltage VFG_L IFG = +2.5 mA Output on resistance (upper + lower MOSFET) RON ID = 200 mA −20°C < TA < 75°C Off state leakage ID(OFF) Output turn-on time tONH Output turn-off time tOFFH 0.3 <IND signal output part> 3.5 V 0.5 V 0.9 Ω −20°C < TA < 75°C 10 µA RM = 5Ω star connection 1.0 µs 1.0 µs 0.3 4.0 V 0.3 4.0 V 70 µA <Output part> 0.6 <Torque order part> Control standard input votlage range ECR Control input voltage range EC Input current IIN EC, ECR = 0.5 to 3.0 V Input voltage difference ECR-EC Duty = 100%, ECR = 2 V exclusing dead zone Dead zone (+) EC_d+ ECR = 2 V 0 65 100 mV Dead zone (−) EC_d− ECR = 2 V 0 −65 −100 mV 15 mV 110 mV 0.75 V <Over current detection part> Input offset voltage VIO −15 CL terminal voltage VCL 90 100 Thermal shut down circuit (TSD) works in TCH > 150°C. Low voltage malfunction prevention circuit (UVLO) works in 4 V (TYP.). Data Sheet S13870EJ1V0DS00 3 µPD16873/A/B/C PIN CONNECTION IND STB VM VM OUT2 RF RF OUT1 VM VM OUT0 RF RF ISEN CL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 Pin No. Pin name 1 IND Index signal output terminal 2 STB Standby mode input terminal 3 VM 4 VM 5 OUT2 6 RF 7 RF 8 OUT1 EC ECR VDD CT H2+ H2− H1+ H1− H0+ H0− HB GND GND ST/SP NC Terminal function Supply voltage input terminal for motor part Supply voltage input terminal for motor part Motor connection terminal (W-phase) 3 pahse bridge common terminal 3 phase bridge common terminal Motor connection terminal (V-phase) 9 VM Supply voltage input terminal for motor part 10 VM Supply voltage input terminal for motor part 11 OUT0 12 RF Motor connection terminal (U-phase) 3 phase bridge common terminal 13 RF 14 ISENSE 3 phase bridge common terminal 15 CL Over current detection voltage filter terminal 16 NC No connection 17 ST/SP 18 GND Ground terminal 19 GND Ground terminal 20 HB Hall bias terminal 21 H0− Hall signal input terminal (U-phase) 22 H0+ Hall signal input terminal (U-phase) 23 H1− Hall signal input terminal (V-phase) 24 H1+ Hall signal input terminal (V-phase) 25 H2− Hall signal input terminal (W-phase) 26 H2+ Hall signal input terminal (W-phase) Sense resistance connection terminal Start/Stop input terminal 27 CT Oscillation frequency setting condenser connection terminal 28 VDD Supply voltage input terminal for control part 29 ECR Control standard voltage input terminal 30 EC Control voltage input terminal Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals. 4 Data Sheet S13870EJ1V0DS00 µPD16873/A/B/C BLOCK DIAGRAM IND 1 30 EC STB 2 29 ECR VM 3 28 VDD 27 CT 26 H2+ 25 H2− 24 H1+ 23 H1− 22 H0+ 21 H0− 20 HB UVLO OSC VM 4 T. S. D Q5 OUT2 5 + Q6 RF 6 RF 7 Phase exciting pulse generation circuit CMP2 + Q3 CMP1 OUT1 − 8 − Q4 VM 9 VM 10 + CMP0 − Q1 OUT0 11 Q2 RF 12 19 GND RF 13 18 GND 17 ST/SP 16 NC ISEN 14 CL 15 + Reverse turn detection circuit − 100 mV Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals. Data Sheet S13870EJ1V0DS00 5 µPD16873/A/B/C TYPICAL CHARACTERISTICS (TA = 25°°C) IDD, IDD (ST) vs. VDD characteristics PT vs. TA characteristics 2.0 VDD pin current (operating) IDD (mA) VDD pin current (standby) IDD (ST) ( µ A) TA = 25°C Power dissipation PT (W) 1.0 125°C/W 0.5 IDD 1.0 IDD (ST) 0 −20 0 20 40 60 0 4.5 80 Ambient temperature TA (°C) 5.0 5.5 Control block supply voltage VDD (V) fPWM vs. VDD characteristics VIH, VIL vs. VDD characteristics (ST/SP, STB) 1.5 100 TA = 25°C CT = 330 pF 1.4 VIH, VIL 1.3 1.2 1.1 1.0 4.5 70 60 5.5 Control block supply voltage VDD (V) fPWM vs. TA characteristics VHch vs. VDD characteristics VDD = 5 V CT = 330 pF 80 70 60 0 20 40 60 80 5.0 TA = 25°C (+) (−) 4.0 3.0 2.0 1.0 0 4.5 Ambient temperature TA (°C) 6 5.0 Control block supply voltage VDD (V) 90 50 −20 80 50 4.5 5.5 5.0 100 PWM frequency fPWM (kHz) PWM frequency fPWM (kHz) 90 Hall amp. same aspect input range VHch (V) High level input voltage VIH (V) LOW level input voltage VIL (V) TA = 25°C Data Sheet S13870EJ1V0DS00 (+) (−) 5.0 Control block supply voltage VDD (V) 5.5 µPD16873/A/B/C RON, vs. TA characteristics RON, vs. VM characteristics 1.0 1.0 VM = 5 V 0.8 Output on resistance RON (Ω) Output on resistance RON (Ω) TA = 25°C 0.6 0.4 0.2 0 4.5 0.6 0.4 0.2 0 −20 5.5 5.0 0.8 Control block supply voltage VM (V) 80 TA = 25°C Dead zone EC_d+/EC_d− (mV) Input voltage difference ECR-EC (V) 60 EC_d+/EC_d− vs. VDD characteristics 0.9 0.8 0.7 0.6 5.0 40 100 TA = 25°C Duty = 100% 0.5 4.5 20 Ambient temperature TA (°C) (ECR-EC) vs. VDD characteristics 1.0 0 5.5 80 EC_d− 60 EC_d+ 40 20 0 4.5 Control block supply voltage VDD (V) 5.0 5.5 Control block supply voltage VDD (V) tONH, tOFFH vs. VM characteristics Output turn−on time tONH ( µ s) Output turn−off time tOFFH ( µ s) 1.0 TA = 25°C VDD = 5 V tONH 0.5 tOFFH 0 4.5 5.0 5.5 Control block supply voltage VDD (V) Data Sheet S13870EJ1V0DS00 7 µPD16873/A/B/C FUNCTION OPERATION TABLE (1) ST/SP (start/stop) function ON/OFF of the movement can be set up under the condition which makes oscillation circuit work. Setting is done with ST/SP terminal. When ST/SP terminal is high level, it becomes active (operating) condition. And, when ST/SP terminal is low level, it becomes stop condition. It becomes short brake condition under the stop condition. • ST/SP = “H” Input signal (Hall amplifier output) Operation mode exciting phase H ON W→V L L OFF L L H ON L L L OFF H L H H ON H L H L OFF L L H H ON L L H L OFF L H H H ON L H H L OFF L H L H ON L H L L OFF CMP 0 CMP 1 CMP 2 PWM H H L H H H H W→U V→U V→W U→W U→V In addition, the movement in OFF varies in the product. Loop is composed through parasitic diode of the high-side MOSFET. (µPD16873/µPD16873A) Loop is composed through channel of the high-side MOSFET. (µPD16873B/µPD16873C) • ST/SP = “L” Input signal (Hall amplifier output) Operation mode CMP 0 CMP 1 CMP 2 PWM − − − − Stop (short brake) It becomes short brake condition. (High side switch is “ON” and low side switch is “OFF”) 8 Data Sheet S13870EJ1V0DS00 µPD16873/A/B/C (2) Torque order The relation between difference (ECR-EC) in control standard voltage (ECR) and control voltage (EC) and the torque is as follows. Duty cycle Forward torque 100% 65 mVtyp 0.75 Vtyp (−) 0.75 Vtyp 65 mVtyp (+) → ECR-EC 100% Reverse torque Input voltage difference (ECR-EC) and output PWM duty becomes related to the proportion. In addition, it becomes reverse brake when input voltage is ECR < EC. It stops after the reverse rotation of the motor is detected under reverse braking mode. If input voltage difference is zero (ECR = EC), it becomes short brake mode. Input voltage difference Output mode ECR > EC Forward turn ECR = EC Stop (short brake) ECR < EC Reverse turn Note Note After detecting reverse, it stops. (3) Standby mode By the setting of standby mode, the power supply inside µPD16873 can be made off. Each output terminal at the time of standby mode becomes high impedance. Also, the oscillation block inside, too, stops and it is possible for the circuit current to reduce. STB terminal Operation mode “H” level Regular mode “L” level Standby mode Data Sheet S13870EJ1V0DS00 9 µPD16873/A/B/C TIMING CHART (1) Hall signal input H0 H1 H2 (2) CMP signal CMP0 CMP1 CMP2 IND (873A/873B) IND (873/873C) (3) Output MOSFET drive and comparator choice Q1 (SW) (SW) Q2 SW SW Q3 (SW) Q4 SW Q5 ON Q6 ON ON ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON ON ON ON (SW) (SW) SW SW ON (SW) (SW) SW SW ON Remark µPD16873/A are not synchronous switching. (Normal type PWM) µPD16873B/C are synchronous switching of high-side MOSFET. (Synchronous type PWM) 10 Data Sheet S13870EJ1V0DS00 µPD16873/A/B/C (4) Output terminal voltage wave PWM OUT0 PWM PWM OUT1 OUT2 PWM PWM PWM Caution (1) About output current The rated ouptut current differs depending on whether the motor revolves at a constant speed (steady state), is started (steady state), or Reverse brake is applied. The rated DC current when the motor revolves at a constant speed is 0.5 A, and the rated instantaneous current when the is started is 1.3 A. When the motor is stopped by using Reverse brake, the maximum current is 1.9 A. When use Reverse brake, a current exceeding that when the motor revolves at a constant speed (immediately before a brake is applied) instantaneously flows because of the counter electromotive force due to the motor inductance. Determine the value of over current for steady state, taking the peak current for using Reverse brake to the motor into consideration. (2) About output pin voltage Output terminal (OUT0, OUT1, OUT2) takes the voltage which exceeds a motor power supply during following counter current. Maximum rate of output pin voltage is 6.7 V. Be careful that an output terminal doesn’t take a voltage over 6.7 V. VM VM ID ID ON Q1 ON OFF OFF: µ PD16873/A PWM ON: µ PD16873B/C VOL OUTA OUTB OUTA OUTB VOUTB = IDR (ROUTB + RS) VOUTB = VM + VOL RON(N) OFF PWM-ON RON(N) OFF PWM-ON RF ISEN RF ISEN RS RS Lower Nch MOC: PWM-ON time Lower Nch MOC: PWM-OFF time Data Sheet S13870EJ1V0DS00 11 12 into same aspect input range of hall amplifier. Data Sheet S13870EJ1V0DS00 RS CFIL RFIL RS RFIL 100 mV/RS MOTOR MOTOR MOTOR 330 pF 1.8 kΩ Q5 13 RF CL 15 14 12 RF ISEN 11 10 VM OUT0 9 VM 7 RF 8 6 RF Q6 OUT1 5 OUT2 Q3 Q1 + Phase exciting pulse genration circuit Q4 − 100 mV Q2 Reverse turn detection circuit T. S. D + − − + − + 4 16 17 18 19 20 21 22 23 24 25 26 27 28 VM OSC 3 VM UVLO 29 2 STB CPU 30 1 IND controller NC ST/SP GND GND HB H0− H0+ H1− H1+ H2− 200 Ω 330 pF H2+ CT HW CPU HV controoller ECR VDD controoller EC HU 200 Ω 5 V ± 10% µPD16873/A/B/C APPLICATION CIRCUIT EXAMPLE Caution If hall elements connected series, please change hall bias resistances, and hall signal include µPD16873/A/B/C PACKAGE DIMENSION 30-PIN PLASTIC TSSOP (7.62mm(300)) 30 16 detail of lead end F G T P L 1 U 15 E A H A' I J S C D M N M B NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. Data Sheet S13870EJ1V0DS00 S K ITEM MILLIMETERS A A' 9.85±0.10 9.7±0.1 B 0.375 C 0.65 (T.P.) D 0.24±0.05 E 0.1±0.05 F 1.2 MAX. G 1.0±0.05 H 8.1±0.1 I 6.1±0.1 J 1.0±0.1 K 0.145±0.025 L 0.5 M 0.10 N 0.10 P 3° +5° −3° T 0.25 U 0.6±0.15 S30MC-65-6A4 13 µPD16873/A/B/C RECOMMENDED SOLDERING CONDITIONS Solder this product under the following recommended conditions. For soldering methods and conditions other than those recommended, consult NEC. For details of the recommended soldering conditions, refer to information document “Semiconductor Device Mounting Technology Manual”. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Package peak temperature: 235°C; Time: 30 secs. max. (210°C min.); Number of times: 3 times max.; Number of day: none; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. IR35-00-3 VPS Package peak temperature: 215°C; Time: 40 secs. max.; (200°C min.) Number of times: 3 times max.; Number of day: none; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. VP15-00-3 Wave Soldering Package peak temperature: 260°C; Time: 10 secs. max.; Preheating temperature: 120°C max.; Number of times: once; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. WS60-00-1 Caution Do not use two or more soldering methods in combination. 14 Data Sheet S13870EJ1V0DS00 µPD16873/A/B/C NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet S13870EJ1V0DS00 15 µPD16873/A/B/C • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8