LZ2323H5/LZ2324HJ 1/3-type CCD Area Sensors with 320 k Pixels LZ2323H5/ LZ2324HJ PIN CONNECTIONS DESCRIPTION The LZ2323H5/LZ2324HJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color (LZ2323H5)/B/W (LZ2324HJ) image. 16-PIN SHRINK-PITCH WDIP FEATURES • Number of effective pixels : 512 (H) x 582 (V) • Number of optical black pixels – Horizontal : 2 front and 28 rear • Pixel pitch : 9.6 µm (H) x 6.3 µm (V) • Mg, G, Cy, and Ye complementary color filters (For LZ2323H5) • Low fixed-pattern noise and lag • No burn-in and no image distortion • Blooming suppression structure • Built-in output amplifier • Variable electronic shutter (1/50 to 1/10 000 s) • Compatible with PAL standard (LZ2323H5)/ CCIR standard (LZ2324HJ) • Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm TOP VIEW OD 1 16 GND ØRS 2 15 ØV4 RD 3 14 ØV3 OS 4 13 ØV2 NC1 5 12 ØV1 NC2 6 11 PW ØH2 7 10 OFD ØH1 8 9 T1 (WDIP016-N-0500C) PRECAUTIONS • The exit pupil position of lens should be more than 25 mm (LZ2323H5)/20 mm (LZ2324HJ) from the top surface of the CCD. • Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details. COMPARISON TABLE TV standard Characteristics LZ2323H5 LZ2324HJ PAL standard (Color) CCIR standard (B/W) Refer to each following specification. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 LZ2323H5/LZ2324HJ PIN DESCRIPTION RD SYMBOL PIN NAME Reset transistor drain OD OS Output transistor drain Output signals ØRS ØV1, ØV2, ØV3, ØV4 Reset transistor clock Vertical shift register clock ØH1, ØH2 Horizontal shift register clock OFD PW Overflow drain P-well GND T1 Ground Test pin NC1, NC2 No connection ABSOLUTE MAXIMUM RATINGS PARAMETER Output transistor drain voltage (TA = +25 ˚C) SYMBOL VOD RATING 0 to +18 UNIT V VRD VOFD 0 to +18 0 to +55 V V Reset transistor drain voltage Overflow drain voltage VT1 0 to +18 V VØRS VØV –0.3 to +18 –9.0 to +18 V V VØH VPW-VØV –0.3 to +18 –27 to 0 V V Storage temperature TSTG –40 to +85 ˚C Ambient operating temperature TOPR –20 to +70 ˚C Test pin, T1 Reset gate clock voltage Vertical shift register clock voltage Horizontal shift register clock voltage Voltage difference between P-well and vertical clock NOTE : 1. The OFD clock ØOFD is excluded. 2 NOTE 1 LZ2323H5/LZ2324HJ RECOMMENDED OPERATING CONDITIONS PARAMETER Ambient operating temperature SYMBOL TOPR MIN. TYP. 25.0 MAX. UNIT ˚C Output transistor drain voltage Reset transistor drain voltage VOD VRD 14.5 15.0 16.0 V VOFD VØOFD 5.0 19.0 V 1 V 2 Overflow drain voltage When DC is applied When pulse is applied p-p level Ground P-well voltage GND VPW VØV1L, VØV2L VØV3L, VØV4L LOW level Vertical shift Horizontal shift register clock Reset gate clock INTERMEDIATE level V 21.5 0.0 –9.0 VT1 Test pin, T1 register clock VOD VØVL VOD –8.5 VØV1I, VØV2I –8.0 V V V –7.5 0.0 VØV3I, VØV4I V V HIGH level VØV1H, VØV3H 14.5 15.0 17.0 V LOW level VØH1L, VØH2L –0.05 4.7 0.0 0.05 V 5.0 6.0 V VRD – 13.0 V 9.5 V HIGH level LZ2323H5 LZ2324HJ LOW level HIGH level VØH1H, VØH2H VØRSL 4.5 0.0 VØRSH VRD – 8.5 NOTE Vertical shift register clock frequency fØV1, fØV2 fØV3, fØV4 15.63 kHz Horizontal shift register clock frequency Reset gate clock frequency fØH1, fØH2 fØRS 9.66 9.66 MHz MHz NOTES : • Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF. 1. When DC voltage is applied, shutter speed is 1/50-second. 2. When pulse is applied, shutter speed is less than 1/50-second. * To apply power, first connect GND and then turn on VOFD. After turning on VOFD, turn on PW first and then turn on other powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied. 3 LZ2323H5/LZ2324HJ CHARACTERISTICS FOR LZ2323H5 (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage SYMBOL VO Photo response non-uniformity Saturation output voltage PRNU VSAT MIN. TYP. 150 MAX. UNIT mV NOTE 2 15 % mV 3 4 650 Dark output voltage VDARK 0.3 3.0 mV 1, 5 Dark signal non-uniformity Sensitivity DSNU R 0.6 550 2.0 mV mV 1, 6 7 –81 –76 1.0 dB % 8 9 4.0 350 8.0 mA $ Vector breakup Line crawling 7.0 3.0 ˚, % % 11 12 Luminance flicker 2.0 % 13 Smear ratio Image lag SMR AI Blooming suppression ratio ABL Output transistor drain current Output impedance IOD RO 400 100 10 NOTES : 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions. 12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions. 13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions. • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The output voltage measured at the carrier peak when the carrier signal reaches maximum. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 4 LZ2323H5/LZ2324HJ CHARACTERISTICS FOR LZ2324HJ (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage SYMBOL VO Photo response non-uniformity Saturation output voltage PRNU VSAT MIN. TYP. 150 MAX. UNIT mV NOTE 2 10 % mV 3 4 650 Dark output voltage VDARK 0.3 3.0 mV 1, 5 Dark signal non-uniformity Sensitivity DSNU R 0.6 700 2.0 mV mV 1, 6 7 –90 –76 1.0 dB % 8 9 4.0 350 8.0 mA $ Smear ratio Image lag SMR AI Blooming suppression ratio ABL Output transistor drain current Output impedance IOD RO 500 100 10 NOTES : 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 5 LZ2323H5/LZ2324HJ PIXEL STRUCTURE OPTICAL BLACK (2 PIXELS) yy ,, ,, yy ,, yy ,, yy ,, yy ,, yy yyy ,,, ,,, yyy ,,, yyy ,,, yyy ,,, yyy ,,, yyy 512 (H) x 582 (V) 1 pin OPTICAL BLACK (28 PIXELS) COLOR FILTER ARRAY (FOR LZ2323H5) (1, 582) 1st, 3rd field (512, 582) G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye (1, 1) 2nd, 4th field (512, 1) 6 LZ2323H5/LZ2324HJ TIMING CHART VERTICAL TRANSFER TIMING (1st, 3rd FIELD) Shutter speed 1/2 000 s HD VD ØV1 ØV2 ØV3 ØV4 ØOFD 580 582 + 581 1 + 2 3 + 4 5 + 6 7 + 8 579 581 + + 580 582 1 2 + 3 4 + 5 6 + 7 OS (2nd, 4th FIELD) HD VD ØV1 ØV2 ØV3 ØV4 ØOFD OS HORIZONTAL TRANSFER TIMING 618, 1 60 HD ØH1 ØH2 ØRS OS …512 OB (2) OUTPUT (512) 1πππ OB (28) 29 49 ØV1 39 59 ØV2 54 24 ØV3 34 64 ØV4 62 ØOFD 7 72 LZ2323H5/LZ2324HJ READOUT TIMING (1st, 3rd FIELD) HD 1 60 618, 1 242 29 49 ØV1 39 59 ØV2 24 ØV3 29 49 161 54 34 ØV4 290 449 290 180 60 39 59 338 54 34 64 64 (2nd, 4th FIELD) HD ØV1 ØV2 ØV3 ØV4 1 60 618, 1 242 29 49 39 59 24 54 34 60 290 161 59 290 180 338 54 450 64 8 64 V4 NC V3B V3A V1B VMa V1A VH 9 1 13 14 15 16 17 18 19 20 21 22 23 24 VDD +5 V V3X VH1AX V1X V2X OFDX V2 2 9 8 7 5 4 3 2 270 pF 100 k$ 1 10 11 12 13 14 15 16 LZ2323H5 or LZ2324HJ 6 ØH2 VH3AX + NC2 LR36685 VL 3 VMb 4 POFD 5 ØH1 6 OS 7 NC1 8 0.1 µF RD 9 100 $ ØRS 12 11 10 1 000 pF 1 M$ OD V4X VH VL (VPW) ØRS ØH2 ØH1 VOD CCD OUT LZ2323H5/LZ2324HJ SYSTEM CONFIGURATION EXAMPLE + + GND ØV4 ØV3 ØV2 ØV1 PW T1 OFD VOFDH VH3BX OFDX V2X V1X VH1AX V3X GND + VH3AX V4X VH1BX + + PACKAGES FOR CCD AND CMOS DEVICES PACKAGE (Unit : mm) 16 WDIP (WDIP016-N-0500C) θ CCD Glass Lid 1.66±0.10 6.20±0.15 16 12.40±0.15 0.60±0.60 1.40±0.60 11.20±0.10 (◊) Center of effective imaging area and center of package (◊ : Lid's size) 9 7.00±0.15 CCD Package (Cerdip) 0.04 Cross Section A-A' 8 Rotation error of die : ¬ = 1.5˚MAX. A P-1.78TYP. A' 0.46TYP. 0.90TYP. 0.25 M 2.63TYP. 1.05MIN. 3.90±0.30 1.27±0.25 2.60±0.20 14.00±0.15 5.24MAX. 3.42±0.25 11.20±0.10 (◊) 0.80±0.05 (◊) 1 0.25±0.10 12.70±0.25 10 PRECAUTIONS FOR CCD AREA SENSORS PRECAUTIONS FOR CCD AREA SENSORS (In the case of plastic packages) – The leads of the package are fixed with package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead. 1. Package Breakage In order to prevent the package from being broken, observe the following instructions : 1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when mounting, handling, or transporting. ø Avoid giving a shock to the package. Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed. 2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part. Glass cap Package Lead Fixed Stand-off 3) When mounting the package on the housing, be sure that the package is not bent. – If a bent package is forced into place between a hard plate or the like, the package may be broken. 4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate. Therefore, ø Do not hit the glass cap. ø Do not give a shock large enough to cause distortion. ø Do not scrub or scratch the glass surface. – Even a soft cloth or applicator, if dry, could cause dust to scratch the glass. (In the case of ceramic packages) – The leads of the package are fixed with low melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead. Low melting point glass Lead 2. Electrostatic Damage As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD : 1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side. 2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead. Fixed Stand-off 11 PRECAUTIONS FOR CCD AREA SENSORS ø The contamination on the glass surface should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only. – Frequently replace the applicator and do not use the same applicator to clean more than one device. ◊ Note : In most cases, dust and contamination are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device. 3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or plastic. b. do not attach any tape or labels. c. do not clean the glass surface with dustcleaning tape. 4) When storing or transporting the device, put it in a container of conductive material. 3. Dust and Contamination Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions : 1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.) 2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust. 4. Other 1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron. 2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD. 3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters. 12