LZ2353B/LZ2354BJ 1/3-type CCD Area Sensors with 410 k Pixels LZ2353B/ LZ2354BJ DESCRIPTION PIN CONNECTIONS The LZ2353B/LZ2354BJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 410 000 pixels (811 horizontal x 507 vertical), the sensor provides a stable high-resolution color (LZ2353B)/B/W (LZ2354BJ) image. 16-PIN HALF-PITCH WDIP FEATURES • Number of effective pixels : 768 (H) x 494 (V) • Number of optical black pixels – Horizontal : 3 front and 40 rear – Vertical : 11 front and 2 rear • Pixel pitch : 6.4 µm (H) x 7.5 µm (V) • Mg, G, Cy, and Ye complementary color filters (For LZ2353B) • Low fixed-pattern noise and lag • No burn-in and no image distortion • Blooming suppression structure • Built-in output amplifier • Variable electronic shutter (1/60 to 1/10 000 s) • Compatible with NTSC standard (LZ2353B)/ EIA standard (LZ2354BJ) • Package : 16-pin half-pitch WDIP [Ceramic] (WDIP016-N-0450) Row space : 11.43 mm TOP VIEW ØV4 1 16 ØH2 ØV3 2 15 ØH1 ØV2 3 14 ØLH1 ØV1 4 13 ØRS GND 5 12 PW NC1 6 11 OFD NC2 7 10 GND OS 8 9 OD (WDIP016-N-0450) PRECAUTIONS • The exit pupil position of lens should be more than 25 mm (LZ2353B)/20 mm (LZ2354BJ) from the top surface of the CCD. • Refer to "PRECAUTIONS FOR CCD AREA SENSORS" for details. COMPARISON TABLE TV standard LZ2353B NTSC standard (Color) Characteristics LZ2354BJ EIA standard (B/W) Refer to each following specification. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 LZ2353B/LZ2354BJ PIN DESCRIPTION SYMBOL OD PIN NAME Output transistor drain OS ØRS Output signals ØV1, ØV2, ØV3, ØV4 Vertical shift register clock ØH1, ØH2 Horizontal shift register clock ØLH1 Horizontal shift register final stage clock OFD PW Overflow drain P-well GND NC1, NC2 Ground Reset transistor clock No connection ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C) PARAMETER Output transistor drain voltage Overflow drain voltage SYMBOL VOD VOFD RATING 0 to +18 0 to +55 Reset gate clock voltage Vertical shift register clock voltage VØRS VØV –0.3 to +18 V VPW to +18 V Horizontal shift register clock voltage VØH –0.3 to +18 V Horizontal shift register final stage clock voltage Voltage difference between P-well and vertical clock VØLH –0.3 to +18 –28 to 0 V V –40 to +85 –20 to +70 ˚C ˚C VPW-VØV Storage temperature TSTG Ambient operating temperature TOPR NOTE : 1. The OFD clock ØOFD is excluded. 2 UNIT V V NOTE 1 LZ2353B/LZ2354BJ RECOMMENDED OPERATING CONDITIONS PARAMETER Ambient operating temperature SYMBOL TOPR MIN. TYP. 25.0 MAX. UNIT ˚C Output transistor drain voltage VOD 14.5 15.0 16.0 V 19.0 V 1 V V 2 Overflow drain When DC is applied VOFD 5.0 voltage When pulse is applied p-p level VØOFD GND 21.5 VPW –10.0 Ground P-well voltage LOW level VØV1L, VØV2L VØV3L, VØV4L 0.0 –9.5 –9.0 VØVL V –7.5 V Vertical shift register clock INTERMEDIATE level Horizontal shift HIGH level LOW level VØV1H, VØV3H VØH1L, VØH2L 14.5 –0.05 15.0 0.0 17.0 0.05 V V VØV1I, VØV2I VØV3I, VØV4I 0.0 V register clock HIGH level VØH1H, VØH2H 4.7 5.0 6.0 V Horizontal shift register final LOW level VØLH1L –0.05 0.0 0.05 V stage clock HIGH level VØLH1H 4.7 5.0 6.0 V LOW level VØRSL 0.0 VOD – 14.0 V VØRSH VOD – 9.5 10.0 V Reset gate clock HIGH level Vertical shift register clock frequency Horizontal shift register clock frequency Reset gate clock frequency NOTE fØV1, fØV2 fØV3, fØV4 15.73 kHz fØH1, fØH2, fØLH1 fØRS 14.32 14.32 MHz MHz NOTES : • Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF. 1. When DC voltage is applied, shutter speed is 1/60-second. 2. When pulse is applied, shutter speed is less than 1/60-second. * To apply power, first connect GND and then turn on VOFD. After turning on VOFD, turn on PW first and then turn on other powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied. 3 LZ2353B/LZ2354BJ CHARACTERISTICS FOR LZ2353B (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage Photo response non-uniformity Saturation output voltage Dark output voltage Dark signal non-uniformity Sensitivity Smear ratio Image lag Blooming suppression ratio Output transistor drain current Output impedance Dark noise OB difference in level Vector breakup Line crawling Luminance flicker SYMBOL VO PRNU VSAT VDARK DSNU R SMR AI ABL IOD RO VNOISE MIN. TYP. 150 MAX. 10 700 260 0.5 0.5 350 –84 3.0 2.0 –76 1.0 UNIT mV % mV mV mV mV dB % 1 000 4.0 350 0.2 8.0 0.3 1.0 5.0 1.5 2.0 mA $ mV mV ˚, % % % NOTE 2 3 4 1, 5 1, 6 7 8 9 10 11 1, 12 13 14 15 NOTES : • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 11. The RMS value of the dark noise (after CDS). (100 kHz to 4.2 MHz, SC trap on.) 12. The difference of the average output voltage between the effective area and the OB area under non-exposure conditions. 13. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions. 14. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions. 15. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions. 4 LZ2353B/LZ2354BJ CHARACTERISTICS FOR LZ2354BJ (Drive method : Field accumulation) (TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS". Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.) PARAMETER Standard output voltage SYMBOL VO Photo response non-uniformity Saturation output voltage PRNU VSAT Dark output voltage VDARK 0.5 Dark signal non-uniformity Sensitivity DSNU R 0.5 550 Gamma Smear ratio MIN. 10 410 1 –84 AI Blooming suppression ratio Output transistor drain current ABL IOD Output impedance RO 350 VNOISE 0.2 Dark noise OB difference in level MAX. 700 ‹ SMR Image lag TYP. 150 UNIT mV NOTE 2 % 3 mV 4 3.0 mV 1, 5 2.0 mV mV 1, 6 7 –76 dB 8 1.0 % 1 000 9 10 4.0 8.0 mA 0.3 mV 11 1.0 mV 1, 12 $ NOTES : • VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device. 1. TA = +60 ˚C 2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively. 4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. VSAT is the minimum segment's voltage under 10 times exposure of the standard exposure conditions. 5. The average output voltage under non-exposure conditions. 6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively. 7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm. 8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square. 9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage. 10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed. 11. The RMS value of the dark noise after CDS. (100 kHz to 4.2 MHz, SC trap on.) 12. The difference between the average output voltage of the effective area and that of the OB area under nonexposure conditions. 5 LZ2353B/LZ2354BJ PIXEL STRUCTURE yyyyyyyyy ,,,,,,,,, ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, yyyyyyyyy yyyyyyyyy ,,,,,,,,, yyyyyyyyy ,,,,,,,,, OPTICAL BLACK (2 PIXELS) OPTICAL BLACK (3 PIXELS) 1 pin OPTICAL BLACK (40 PIXELS) 768 (H) x 494 (V) OPTICAL BLACK (11 PIXELS) COLOR FILTER ARRAY (FOR LZ2353B) (1, 494) ODD field (768, 494) Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye G Mg G Mg G Mg G Mg G Mg Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye Mg G Mg G Mg G Mg G Mg G (1, 1) EVEN field (768, 1) 6 LZ2353B/LZ2354BJ TIMING CHART VERTICAL TRANSFER TIMING (ODD FIELD) 525 1 Shutter speed 1/2 000 s 10 HD VD ØV1 ØV2 ØV3 ØV4 ØOFD 489 491 493 OB1 + + + + 490 492 494 OB2 OB1 OB3 OB5 OB7 OB9 OB11 2 + + + + + + + OB2 OB4 OB6 OB8 OB10 1 3 4 + 5 6 + 7 8 + 9 10 + 11 12 + 13 14 + 15 16 + 17 OB2 OB4 OB6 OB8 OB10 1 + + + + + + OB1 OB3 OB5 OB7 OB9 OB11 2 3 + 4 5 + 6 7 + 8 9 + 10 11 + 12 13 + 14 15 + 16 OS (EVEN FIELD) 263 272 HD VD ØV1 ØV2 ØV3 ØV4 ØOFD 488 490 492 494 OB2 + + + + 489 491 493 OB1 OS HORIZONTAL TRANSFER TIMING 910, 1 91 HD ØH1 ØLH1 ØH2 ØRS OS π768 PRE SCAN (22) OB (3) OUTPUT (768) 1πππ OB (40) 42 74 ØV1 58 90 ØV2 ØV3 ØV4 34 82 50 98 66 ØOFD 7 86 LZ2353B/LZ2354BJ READOUT TIMING (ODD FIELD) HD 1 91 910, 1 336 42 74 ØV1 58 90 ØV2 34 ØV3 42 74 208 82 50 ØV4 404 644 404 240 91 58 90 472 82 50 98 98 (EVEN FIELD) HD ØV1 1 91 ØV4 336 42 74 58 90 ØV2 ØV3 910, 1 34 50 82 91 404 208 90 404 240 472 82 644 98 8 98 V4 V3B NC V3A V1B V1A VMa VH 9 13 14 15 16 17 18 19 20 21 22 23 24 1 270 pF 100 k$ 8 7 6 5 GND 4 ØV1 3 ØV2 2 9 NC1 ØV3 1 LZ2353B or LZ2354BJ 16 15 14 13 12 11 10 NC2 ØV4 VDD +5 V V3X VH1AX V1X V2X OFDX V2 OS VH3AX VL LR36685 VMb 2 POFD 3 ØH2 4 ØH1 5 ØLH1 6 ØRS 7 PW 8 0.1 µF OFD 9 100 $ OD 12 11 10 1 000 pF 1 M$ GND V4X VH VL (VPW) ØRS ØLH1 ØH1 ØH2 VOD CCD OUT LZ2353B/LZ2354BJ SYSTEM CONFIGURATION EXAMPLE + + + VOFDH VH3BX OFDX V2X V1X VH1AX V3X GND + VH3AX V4X VH1BX + + PACKAGES FOR CCD AND CMOS DEVICES PACKAGE (Unit : mm) 16 WDIP (WDIP016-N-0450) 10.50±0.10 (◊2) 0.50R 2.5 1 8 0.45±0.45 2.5 (◊1) CCD 0.5 8.4 5.70±0.15 ¬ (◊1) 4-0.20RMAX. 0.04 Cross Section A-A' 1.25±0.20 3.50±0.30 1.27±0.25 A' P-1.27TYP. 0.25 M 2.23±0.20 2.75±0.20 Package (Cerdip) 2.5 A 0.30TYP. CCD Rotation error of die : ¬ = 1.5˚MAX. 9.2 1.3 5.29MAX. 3.37±0.25 6.10±0.15 Glass Lid 0.60±0.05 (◊2) 9 (◊1) 16 1.46±0.10 10.50±0.10 (◊2) 11.40±0.15 Center of effective imaging area and center of package (◊1 : Reference area) (◊2 : Lid's size) 12.20±0.15 0.85±0.45 0.25±0.05 11.43±0.25 0.46TYP. 10 PRECAUTIONS FOR CCD AREA SENSORS PRECAUTIONS FOR CCD AREA SENSORS (In the case of plastic packages) – The leads of the package are fixed with package body (plastic), so stress added to a lead could cause a crack in the package body (plastic) in the jointed part of the lead. 1. Package Breakage In order to prevent the package from being broken, observe the following instructions : 1) The CCD is a precise optical component and the package material is ceramic or plastic. Therefore, ø Take care not to drop the device when mounting, handling, or transporting. ø Avoid giving a shock to the package. Especially when leads are fixed to the socket or the circuit board, small shock could break the package more easily than when the package isn’t fixed. 2) When applying force for mounting the device or any other purposes, fix the leads between a joint and a stand-off, so that no stress will be given to the jointed part of the lead. In addition, when applying force, do it at a point below the stand-off part. Glass cap Package Lead Fixed Stand-off 3) When mounting the package on the housing, be sure that the package is not bent. – If a bent package is forced into place between a hard plate or the like, the package may be broken. 4) If any damage or breakage occurs on the surface of the glass cap, its characteristics could deteriorate. Therefore, ø Do not hit the glass cap. ø Do not give a shock large enough to cause distortion. ø Do not scrub or scratch the glass surface. – Even a soft cloth or applicator, if dry, could cause dust to scratch the glass. (In the case of ceramic packages) – The leads of the package are fixed with low melting point glass, so stress added to a lead could cause a crack in the low melting point glass in the jointed part of the lead. Low melting point glass Lead 2. Electrostatic Damage As compared with general MOS-LSI, CCD has lower ESD. Therefore, take the following anti-static measures when handling the CCD : 1) Always discharge static electricity by grounding the human body and the instrument to be used. To ground the human body, provide resistance of about 1 M$ between the human body and the ground to be on the safe side. 2) When directly handling the device with the fingers, hold the part without leads and do not touch any lead. Fixed Stand-off 11 PRECAUTIONS FOR CCD AREA SENSORS ø The contamination on the glass surface should be wiped off with a clean applicator soaked in Isopropyl alcohol. Wipe slowly and gently in one direction only. – Frequently replace the applicator and do not use the same applicator to clean more than one device. ◊ Note : In most cases, dust and contamination are unavoidable, even before the device is first used. It is, therefore, recommended that the above procedures should be taken to wipe out dust and contamination before using the device. 3) To avoid generating static electricity, a. do not scrub the glass surface with cloth or plastic. b. do not attach any tape or labels. c. do not clean the glass surface with dustcleaning tape. 4) When storing or transporting the device, put it in a container of conductive material. 3. Dust and Contamination Dust or contamination on the glass surface could deteriorate the output characteristics or cause a scar. In order to minimize dust or contamination on the glass surface, take the following precautions : 1) Handle the CCD in a clean environment such as a cleaned booth. (The cleanliness level should be, if possible, class 1 000 at least.) 2) Do not touch the glass surface with the fingers. If dust or contamination gets on the glass surface, the following cleaning method is recommended : ø Dust from static electricity should be blown off with an ionized air blower. For antielectrostatic measures, however, ground all the leads on the device before blowing off the dust. 4. Other 1) Soldering should be manually performed within 5 seconds at 350 °C maximum at soldering iron. 2) Avoid using or storing the CCD at high temperature or high humidity as it is a precise optical component. Do not give a mechanical shock to the CCD. 3) Do not expose the device to strong light. For the color device, long exposure to strong light will fade the color of the color filters. 12